Microsemi A2F200M3E-1PQG208Y Smartfusion customizable system-on-chip (csoc) Datasheet

Revision 10
SmartFusion Customizable System-on-Chip (cSoC)
Microcontroller Subsystem (MSS)
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Hard 100 MHz 32-Bit ARM Cortex™-M3
– 1.25 DMIPS/MHz Throughput from Zero Wait State
Memory
– Memory Protection Unit (MPU)
– Single Cycle Multiplication, Hardware Divide
– JTAG Debug (4 wires), Serial Wire Debug (SWD, 2
wires), and Single Wire Viewer (SWV) Interfaces
Internal Memory
– Embedded Nonvolatile Flash Memory (eNVM), 128
Kbytes to 512 Kbytes
– Embedded High-Speed SRAM (eSRAM), 16 Kbytes
to 64 Kbytes, Implemented in 2 Physical Blocks to
Enable Simultaneous Access from 2 Different
Masters
Multi-Layer AHB Communications Matrix
– Provides up to 16 Gbps of On-Chip Memory
Bandwidth,1 Allowing Multi-Master Schemes
10/100 Ethernet MAC with RMII Interface2
Programmable External Memory Controller, Which
Supports:
– Asynchronous Memories
– NOR Flash, SRAM, PSRAM
– Synchronous SRAMs
Two I2C Peripherals
Two 16550 Compatible UARTs
Two SPI Peripherals
Two 32-Bit Timers
32-Bit Watchdog Timer
8-Channel DMA Controller to Offload the Cortex-M3
from Data Transactions
Clock Sources
– 32 KHz to 20 MHz Main Oscillator
– Battery-Backed 32 KHz Low Power Oscillator with
Real-Time Counter (RTC)
– 100 MHz Embedded RC Oscillator; 1% Accurate
– Embedded Analog PLL with 4 Output Phases (0, 90,
180, 270)
High-Performance FPGA
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Based on proven ProASIC®3 FPGA Fabric
Low Power, Firm-Error Immune 130-nm, 7-Layer Metal,
Flash-Based CMOS Process
Nonvolatile, Instant On, Retains Program When
Powered Off
350 MHz System Performance
Embedded SRAMs and FIFOs
– Variable Aspect Ratio 4,608-Bit SRAM Blocks
– x1, x2, x4, x9, and x18 Organizations
– True Dual-Port SRAM (excluding x18)
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– Programmable Embedded FIFO Control Logic
Secure ISP with 128-Bit AES via JTAG
FlashLock® to Secure FPGA Contents
Five Clock Conditioning Circuits (CCCs) with up to 2
Integrated Analog PLLs
– Phase Shift, Multiply/Divide, and Delay Capabilities
– Frequency: Input 1.5–350 MHz, Output 0.75 to
350 MHz
Programmable Analog
Analog Front-End (AFE)
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Up to Three 12-Bit SAR ADCs
– 500 Ksps in 12-Bit Mode
– 550 Ksps in 10-Bit Mode
– 600 Ksps in 8-Bit Mode
Internal 2.56 V Reference or Optional External
Reference
One First-Order  DAC (sigma-delta) per ADC
– 8-Bit, 16-Bit, or 24-Bit 500 Ksps Update Rate
Up to 5 High-Performance Analog Signal Conditioning
Blocks (SCB) per Device, Each Including:
– Two High-Voltage Bipolar Voltage Monitors (with 4
input ranges from ±2.5 V to –11.5/+14 V) with 1%
Accuracy
– High Gain Current Monitor, Differential Gain = 50, up
to 14 V Common Mode
– Temperature Monitor (Resolution = ¼°C in 12-Bit
Mode; Accurate from –55°C to 150°C)
Up to Ten High-Speed Voltage Comparators
(tpd = 15 ns)
Analog Compute Engine (ACE)
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Offloads Cortex-M3–Based MSS from Analog
Initialization and Processing of ADC, DAC, and SCBs
Sample Sequence Engine for ADC and DAC Parameter
Set-Up
Post-Processing Engine for Functions such as LowPass Filtering and Linear Transformation
Easily Configured via GUI in Libero® System-on-Chip
(SoC) Software
I/Os and Operating Voltage
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FPGA I/Os
– LVDS, PCI, PCI-X, up to 24 mA IOH/IOL
– Up to 350 MHz
MSS I/Os
– Schmitt Trigger, up to 6 mA IOH, 8 mA IOL
– Up to 180 MHz
Single 3.3 V Power Supply with On-Chip 1.5 V Regulator
External 1.5 V Is Allowed by Bypassing Regulator
(digital VCC = 1.5 V for FPGA and MSS, analog VCC =
3.3 V and 1.5 V)
1 Theoretical maximum
2 A2F200 and larger devices
January 2013
© 2013 Microsemi Corporation
I
SmartFusion Customizable System-on-Chip (cSoC)
SmartFusion cSoC Family Product Table
A2F060
FPGA Fabric
A2F200
A2F500
TQ144 CS288 FG256 PQ208 CS288 FG256 FG484 PQ208 CS288 FG256 FG484
System Gates
60,000
200,000
500,000
Tiles (D-flip-flops)
1,536
4,608
11,520
8
8
24
A2F060
A2F200
A2F500
RAM Blocks (4,608 bits)
Microcontroller Subsystem (MSS)
TQ144 CS288 FG256 PQ208 CS288 FG256 FG484 PQ208 CS288 FG256 FG484
Flash (Kbytes)
128
256
512
SRAM (Kbytes)
16
64
64
Cortex-M3 processor with MPU
Yes
Yes
Yes
10/100 Ethernet MAC
No
Yes
Yes
External Memory Controller (EMC)
–
DMA
I2C
SPI
26-/16-bit
address/data
26-bit address,16-bit data
–
26-/16-bit address/data
8 Ch
8 Ch
8 Ch
2
2
2
1
2
1
2
1
2
16550 UART
2
2
2
32-Bit Timer
2
2
2
PLL
1
1
32 KHz Low Power Oscillator
1
1
1
100 MHz On-Chip RC Oscillator
1
1
1
Main Oscillator (32 KHz to 20 MHz)
1
1
1
A2F060
A2F200
A2F500
Programmable Analog
1
2
1
2
TQ144 CS288 FG256 PQ208 CS288 FG256 FG484 PQ208 CS288 FG256 FG484
ADCs (8-/10-/12-bit SAR)
1
2
2
3
DACs (8-/16-/24-bit sigma-delta)
1
2
2
3
Signal Conditioning Blocks (SCBs)
1
4
4
5
Comparator*
2
8
8
10
Current Monitors*
1
4
4
5
Temperature Monitors*
1
4
4
5
Bipolar High Voltage Monitors*
2
8
8
10
Note: *These functions share I/O pins and may not all be available at the same time. See the "Analog Front-End Overview" section in
the SmartFusion Programmable Analog User’s Guide for details.
II
R evis i o n 10
SmartFusion Customizable System-on-Chip (cSoC)
Package I/Os: MSS + FPGA I/Os
A2F0601
Device
Package
A2F2002
A2F5002
TQ144
CS288
FG256
PQ208
CS288
FG256
FG484
PQ208
CS288
FG256
FG484
Direct Analog Inputs
11
11
11
8
8
8
8
8
8
8
12
Shared Analog Inputs
4
4
4
16
16
16
16
16
16
16
20
Total Analog Inputs
15
15
15
24
24
24
24
24
24
24
32
Analog Outputs
1
1
1
1
2
2
2
1
2
2
3
22
31
25
41
22
31
25
41
6
78
66
128
135
117
204
3,4
5
21
MSS I/Os
28
5
26
5
FPGA I/Os
6
33
68
66
66
78
66
94
66
Total I/Os
70
112
108
113
135
117
161
113
Notes:
1. There are no LVTTL capable direct inputs available on A2F060 devices.
2. These pins are shared between direct analog inputs to the ADCs and voltage/current/temperature monitors.
3. 16 MSS I/Os are multiplexed and can be used as FPGA I/Os, if not needed for MSS. These I/Os support Schmitt triggers and
support only LVTTL and LVCMOS (1.5 / 1.8 / 2.5, 3.3 V) standards.
4. 9 MSS I/Os are primarily for 10/100 Ethernet MAC and are also multiplexed and can be used as FPGA I/Os if Ethernet MAC is
not used in a design. These I/Os support Schmitt triggers and support only LVTTL and LVCMOS (1.5 / 1.8 / 2.5, 3.3 V
standards.
5. 10/100 Ethernet MAC is not available on A2F060.
6. EMC is not available on the A2F500 PQ208 and A2F060 TQ144 package.
Table 1 • SmartFusion cSoC Package Sizes Dimensions
Package
FG256
FG484
28 × 28
17 × 17
23 × 23
400
784
289
529
Pitch (mm)
0.5
0.5
1.0
1.0
Height (mm)
1.40
3.40
1.60
2.23
Length × Width (mm\mm)
Nominal Area
(mm2)
TQ144
PQ208
20 × 20
CS288
SmartFusion cSoC Device Status
Device
Status
A2F060
Preliminary: CS288, FG256, TQ144
A2F200
Production: CS288, FG256, FG484, PQ208
A2F500
Production: CS288, FG256, FG484, PQ208
Revision 10
III
SmartFusion Customizable System-on-Chip (cSoC)
SmartFusion cSoC Block Diagram
Cortex™-M3
Supervisor
PLL
OSC
RC
+
JTAG
NVIC
PPB
SysReg
SysTick
Microcontroller Subsystem
ENVM
WDT
32 KHz
RTC
3V
SWD
Programmable Analog
MPU
–
SPI 1
APB
UART 1
EFROM
I2C 1
IAP
FPGA Fabric
ESRAM
S
D
I
APB
SPI 2
Timer1
UART 2
Timer2
I2C 2
AHB Bus Matrix
PDMA
APB
EMC
10/100
EMAC
SCB
Temp.
Mon.
Volt Mon.
(ABPS)
Curr.
Mon.
Comparator
Analog Compute
Engine
DAC
(SDD)
ADC
Volt Mon.
(ABPS)
Curr.
Mon.
Comparator
ADC
Post Processing
Engine
........
DAC
(SDD)
SRAM
Legend:
SDD – Sigma-delta DAC
SCB – Signal conditioning block
PDMA – Peripheral DMA
IAP – In-application programming
ABPS – Active bipolar prescaler
WDT – Watchdog Timer
SWD – Serial Wire Debug
IV
VersaTiles
............
SCB
Temp.
Mon.
............
....
Sample Sequencing
Engine
R evis i o n 10
SRAM
SRAM
........
SRAM
SRAM
SRAM
SmartFusion Customizable System-on-Chip (cSoC)
SmartFusion cSoC System Architecture
Bank 0
Bank 5
Bank 1
Embedded FlashROM
(eFROM)
ISP AES Decryption
Charge Pumps
Embedded NVM
(eNVM)
Bank 4
Embedded SRAM
(eSRAM)
SCB
SCB
ADC and DAC
ADC and DAC
SCB
Bank 2
Cortex-M3 Microcontroller Subsystem (MSS)
SCB
Bank 3
Osc.
CCC
PLL/CCC
MSS
FPGA
Analog
Note: Architecture for A2F200
Revision 10
V
SmartFusion Customizable System-on-Chip (cSoC)
Product Ordering Codes
A2F200
F
M3
_
FG
1
484
G
Y
I
Application (junction temperature range)
Blank = Commercial (0 to +85°C)
I = Industrial (–40 to +100°C)
ES = Engineering Silicon (room temperature only)
Security Feature*
Y = Device Includes License to Implement IP Based on the
Cryptography Research, Inc. (CRI) Patent Portfolio
Blank = Device Does Not Include License to Implement IP Based
on the Cryptography Research, Inc. (CRI) Patent Portfolio
Package Lead Count
208
256
288
484
Lead-Free Packaging Options
Blank = Standard Packaging
G = RoHS-Compliant (green) Packaging
Package Type
TQ = Thin Quad Flat Pack (0.5 mm pitch)
PQ = Plastic Quad Flat Pack (0.5 mm pitch)
CS = Chip Scale Package (0.5 mm pitch)
FG = Fine Pitch Ball Grid Array (1.0 mm pitch)
Speed Grade
Blank = 80 MHz MSS Speed; FPGA Fabric at Standard Speed
–1 = 100 MHz MSS Speed; FPGA Fabric 15% Faster than Standard
eNVM Size
A =
B =
C =
D =
E =
F =
CPU Type
G =
M3 = Cortex-M3
8 Kbytes
16 Kbytes
32 Kbytes
64 Kbytes
128 Kbytes
256 Kbytes
512 Kbytes
Currently only the following eNVM sizes are available
per device:
A2F500M3 – G
A2F200M3 – F
A2F060M3 – E
Part Number
SmartFusion Devices
A2F060 = 60,000 System Gates
A2F200 = 200,000 System Gates
A2F500 = 500,000 System Gates
Note: *Most devices in the SmartFusion cSoC family can be ordered with the Y suffix. Devices with a package size greater or equal to
5x5 mm are supported. Contact your local Microsemi SoC Products Group sales representative for more information.
Temperature Grade Offerings
SmartFusion cSoC
A2F060
A2F200
A2F500
TQ144
C, I
–
–
PQ208
–
C, I
C, I
CS288
C, I
C, I
C, I
FG256
C, I
C, I
C, I
FG484
–
C, I
C, I
Notes:
1. C = Commercial Temperature Range: 0°C to 85°C Junction
2. I = Industrial Temperature Range: –40°C to 100°C Junction
VI
R evis i o n 10
SmartFusion Customizable System-on-Chip (cSoC)
Table of Contents
SmartFusion Family Overview
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1
SmartFusion DC and Switching Characteristics
General Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-1
Calculating Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-10
User I/O Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-19
VersaTile Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-55
Global Resource Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-59
RC Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-61
Main and Lower Power Crystal Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-62
Clock Conditioning Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-63
FPGA Fabric SRAM and FIFO Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-65
Embedded Nonvolatile Memory Block (eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-75
Embedded FlashROM (eFROM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-76
JTAG 1532 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-76
Programmable Analog Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-77
Serial Peripheral Interface (SPI) Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-89
Inter-Integrated Circuit (I2C) Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-91
SmartFusion Development Tools
Types of Design Tools . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SmartFusion Ecosystem . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Middleware . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3-1
3-3
3-5
3-6
SmartFusion Programming
In-System Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
In-Application Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Programming and Erase Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4-7
4-8
4-9
4-9
Pin Descriptions
Supply Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-1
User-Defined Supply Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-5
Global I/O Naming Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-6
User Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-6
Special Function Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-8
JTAG Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-10
Microcontroller Subsystem (MSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-12
Analog Front-End (AFE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-14
Analog Front-End Pin-Level Function Multiplexing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-16
TQ144 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-18
CS288 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-22
PQ208 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-32
FG256 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-39
Revision 10
Table of Contents
FG484 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-48
Datasheet Information
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-1
Datasheet Categories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-13
Microsemi SoC Products Group Safety Critical, Life Support, and High-Reliability Applications Policy . . . . . . . . . 6-13
R ev i si o n 1 0
1 – SmartFusion Family Overview
Introduction
The SmartFusion® family of cSoCs builds on the technology first introduced with the Fusion mixed signal
FPGAs. SmartFusion cSoCs are made possible by integrating FPGA technology with programmable
high-performance analog and hardened ARM Cortex-M3 microcontroller blocks on a flash semiconductor
process. The SmartFusion cSoC takes its name from the fact that these three discrete technologies are
integrated on a single chip, enabling the lowest cost of ownership and smallest footprint solution to you.
General Description
Microcontroller Subsystem (MSS)
The MSS is composed of a 100 MHz Cortex-M3 processor and integrated peripherals, which are
interconnected via a multi-layer AHB bus matrix (ABM). This matrix allows the Cortex-M3 processor,
FPGA fabric master, Ethernet message authentication controller (MAC), when available, and peripheral
DMA (PDMA) controller to act as masters to the integrated peripherals, FPGA fabric, embedded
nonvolatile memory (eNVM), embedded synchronous RAM (eSRAM), external memory controller
(EMC), and analog compute engine (ACE) blocks.
SmartFusion cSoCs of different densities offer various sets of integrated peripherals. Available
peripherals include SPI, I2C, and UART serial ports, embedded FlashROM (EFROM), 10/100 Ethernet
MAC, timers, phase-locked loops (PLLs), oscillators, real-time counters (RTC), and peripheral DMA
controller (PDMA).
Programmable Analog
Analog Front-End (AFE)
SmartFusion cSoCs offer an enhanced analog front-end compared to Fusion devices. The successive
approximation register analog-to-digital converters (SAR ADC) are similar to those found on Fusion
devices. SmartFusion cSoC also adds first order sigma-delta digital-to-analog converters (SDD DAC).
SmartFusion cSoCs can handle multiple analog signals simultaneously with its signal conditioning blocks
(SCBs). SCBs are made of a combination of active bipolar prescalers (ABPS), comparators, current
monitors and temperature monitors. ABPS modules allow larger bipolar voltages to be fed to the ADC.
Current monitors take the voltage across an external sense resistor and convert it to a voltage suitable
for the ADC input range. Similarly, the temperature monitor reads the current through an external PNjunction (diode or transistor) and converts it internally for the ADC. The SCB also includes comparators
to monitor fast signal thresholds without using the ADC. The output of the comparators can be fed to the
analog compute engine or the ADC.
Analog Compute Engine (ACE)
The mixed signal blocks found in SmartFusion cSoCs are controlled and connected to the rest of the
system via a dedicated processor called the analog compute engine (ACE). The role of the ACE is to
offload control of the analog blocks from the Cortex-M3, thus offering faster throughput or better power
consumption compared to a system where the main processor is in charge of monitoring the analog
resources. The ACE is built to handle sampling, sequencing, and post-processing of the ADCs, DACs,
and SCBs.
R ev i si o n 1 0
1 -1
SmartFusion Family Overview
ProASIC3 FPGA Fabric
The SmartFusion cSoC family, based on the proven, low power, firm-error immune ProASIC®3 flash
FPGA architecture, benefits from the advantages only flash-based devices offer:
Reduced Cost of Ownership
Advantages to the designer extend beyond low unit cost, high performance, and ease of use. Flashbased SmartFusion cSoCs are Instant On and do not need to be loaded from an external boot PROM at
each power-up. On-board security mechanisms prevent access to the programming information and
enable secure remote updates of the FPGA logic. Designers can perform secure remote in-system
programming (ISP) to support future design iterations and critical field upgrades, with confidence that
valuable IP cannot be compromised or copied. Secure ISP can be performed using the industry standard
AES algorithm with MAC data authentication on the device.
Low Power
Flash-based SmartFusion cSoCs exhibit power characteristics similar to those of an ASIC, making them
an ideal choice for power-sensitive applications. With SmartFusion cSoCs, there is no power-on current
and no high current transition, both of which are common with SRAM-based FPGAs.
SmartFusion cSoCs also have low dynamic power consumption and support very low power timekeeping mode, offering further power savings.
Security
As the nonvolatile, flash-based SmartFusion cSoC family requires no boot PROM, there is no vulnerable
external bitstream. SmartFusion cSoCs incorporate FlashLock®, which provides a unique combination of
reprogrammability and design security without external overhead, advantages that only a device with
nonvolatile flash programming can offer.
SmartFusion cSoCs utilize a 128-bit flash-based key lock and a separate AES key to provide security for
programmed IP and configuration data. The FlashROM data in Fusion devices can also be encrypted
prior to loading. Additionally, the flash memory blocks can be programmed during runtime using the AES128 block cipher encryption standard (FIPS Publication 192).
SmartFusion cSoCs with AES-based security are designed to provide protection for remote field updates
over public networks, such as the Internet, and help to ensure that valuable IP remains out of the hands
of system overbuilders, system cloners, and IP thieves. As an additional security measure, the FPGA
configuration data of a programmed Fusion device cannot be read back, although secure design
verification is possible. During design, the user controls and defines both internal and external access to
the flash memory blocks.
Security, built into the FPGA fabric, is an inherent component of the SmartFusion cSoC family. The flash
cells are located beneath seven metal layers, and many device design and layout techniques have been
used to make invasive attacks extremely difficult. SmartFusion cSoCs, with FlashLock and AES security,
are unique in being highly resistant to both invasive and noninvasive attacks. Your valuable IP is
protected with industry standard security measures, making remote ISP feasible. A SmartFusion cSoC
provides the highest security available for programmable logic designs.
Single Chip
Flash-based FPGAs store their configuration information in on-chip flash cells. Once programmed, the
configuration data is an inherent part of the FPGA structure, and no external configuration data needs to
be loaded at system power-up (unlike SRAM-based FPGAs). Therefore, flash-based SmartFusion
cSoCs do not require system configuration components such as electrically erasable programmable
read-only memories (EEPROMs) or microcontrollers to load device configuration data during power-up.
This reduces bill-of-materials costs and PCB area, and increases system security and reliability.
Instant On
Flash-based SmartFusion cSoCs are Instant On. Instant On SmartFusion cSoCs greatly simplify total
system design and reduce total system cost by eliminating the need for complex programmable logic
devices (CPLDs). SmartFusion Instant On clocking (PLLs) replace off-chip clocking resources. In
addition, glitches and brownouts in system power will not corrupt the SmartFusion flash configuration.
Unlike SRAM-based FPGAs, the device will not have to be reloaded when system power is restored.
This enables reduction or complete removal of expensive voltage monitor and brownout detection
1- 2
R ev isio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
devices from the PCB design. Flash-based SmartFusion cSoCs simplify total system design and reduce
cost and design risk, while increasing system reliability.
Immunity to Firm Errors
Firm errors occur most commonly when high-energy neutrons, generated in the atmosphere, strike a
configuration cell of an SRAM FPGA. The energy of the collision can change the state of the
configuration cell and thus change the logic, routing, or I/O configuration behavior in an unpredictable
way.
Another source of radiation-induced firm errors is alpha particles. For alpha radiation to cause a soft or
firm error, its source must be in very close proximity to the affected circuit. The alpha source must be in
the package molding compound or in the die itself. While low-alpha molding compounds are being used
increasingly, this helps reduce but does not entirely eliminate alpha-induced firm errors.
Firm errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a
complete system failure. Firm errors do not occur in SmartFusion cSoCs. Once it is programmed, the
flash cell configuration element of SmartFusion cSoCs cannot be altered by high energy neutrons and is
therefore immune to errors from them. Recoverable (or soft) errors occur in the user data SRAMs of all
FPGA devices. These can easily be mitigated by using error detection and correction (EDAC) circuitry
built into the FPGA fabric.
Specifying I/O States During Programming
You can modify the I/O states during programming in FlashPro. In FlashPro, this feature is supported for
PDB files generated from Designer v8.5 or greater. See the FlashPro User’s Guide for more information.
Note: PDB files generated from Designer v8.1 to Designer v8.4 (including all service packs) have
limited display of Pin Numbers only.
The I/Os are controlled by the JTAG Boundary Scan register during programming, except for the analog
pins (AC, AT and AV). The Boundary Scan register of the AG pin can be used to enable/disable the gate
driver in software v9.0.
1. Load a PDB from the FlashPro GUI. You must have a PDB loaded to modify the I/O states during
programming.
2. From the FlashPro GUI, click PDB Configuration. A FlashPoint – Programming File Generator
window appears.
3. Click the Specify I/O States During Programming button to display the Specify I/O States During
Programming dialog box.
4. Sort the pins as desired by clicking any of the column headers to sort the entries by that header.
Select the I/Os you wish to modify (Figure 1-1 on page 1-4).
5. Set the I/O Output State. You can set Basic I/O settings if you want to use the default I/O settings
for your pins, or use Custom I/O settings to customize the settings for each pin. Basic I/O state
settings:
1 – I/O is set to drive out logic High
0 – I/O is set to drive out logic Low
Last Known State – I/O is set to the last value that was driven out prior to entering the
programming mode, and then held at that value during programming
Z -Tri-State: I/O is tristated
R ev i si o n 1 0
1 -3
SmartFusion Family Overview
Figure 1-1 •
I/O States During Programming Window
6. Click OK to return to the FlashPoint – Programming File Generator window.
Note: I/O States During programming are saved to the ADB and resulting programming files after
completing programming file generation.
1- 4
R ev isio n 1 0
2 – SmartFusion DC and Switching Characteristics
General Specifications
Operating Conditions
Stresses beyond the operating conditions listed in Table 2-1 may cause permanent damage to the
device.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings are stress ratings only; functional operation of the device at these or any
other conditions beyond those listed under the Recommended Operating Conditions specified in
Table 2-3 on page 2-3 is not implied.
Table 2-1 • Absolute Maximum Ratings
Symbol
VCC
Parameter
DC core supply voltage
Limits
Units
–0.3 to 1.65
V
VJTAG
JTAG DC voltage
–0.3 to 3.75
V
VPP
Programming voltage
–0.3 to 3.75
V
VCCPLLx
Analog power supply (PLL)
–0.3 to 1.65
V
VCCFPGAIOBx DC FPGA I/O buffer supply voltage
–0.3 to 3.75
V
VCCMSSIOBx
DC MSS I/O buffer supply voltage
–0.3 to 3.75
V
VI
I/O input voltage
–0.3 V to 3.6 V
V
(when I/O hot insertion mode is enabled)
–0.3 V to (VCCxxxxIOBx + 1 V) or 3.6 V,
whichever voltage is lower (when I/O hotinsertion mode is disabled)
VCC33A
Analog clean 3.3 V supply to the analog
circuitry
–0.3 to 3.75
V
VCC33ADCx
Analog 3.3 V supply to ADC
–0.3 to 3.75
V
VCC33AP
Analog clean 3.3 V supply to the charge pump
–0.3 to 3.75
V
VCC33SDDx
Analog 3.3 V supply to the sigma-delta DAC
–0.3 to 3.75
V
VAREFx
Voltage reference for ADC
1.0 to 3.75
V
VCCRCOSC
Analog supply to the integrated RC oscillator
–0.3 to 3.75
V
VDDBAT
External battery supply
–0.3 to 3.75
V
VCCMAINXTAL Analog supply to the main crystal oscillator
–0.3 to 3.75
V
VCCLPXTAL
Analog supply to the low power 32 kHz crystal
oscillator
–0.3 to 3.75
V
VCCENVM
Embedded nonvolatile memory supply
–0.3 to 1.65
V
VCCESRAM
Embedded SRAM supply
–0.3 to 1.65
V
VCC15A
Analog 1.5 V supply to the analog circuitry
–0.3 to 1.65
V
VCC15ADCx
Analog 1.5 V supply to the ADC
–0.3 to 1.65
V
TSTG1
Storage temperature
–65 to +150
°C
TJ
Junction temperature
125
°C
1
Notes:
1. For flash programming and retention maximum limits, refer to Table 2-4 on page 2-4. For recommended operating
conditions, refer to Table 2-3 on page 2-3.
2. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may
undershoot or overshoot according to the limits shown in Table 2-5 on page 2-4.
R ev i si o n 1 0
2 -1
SmartFusion DC and Switching Characteristics
Table 2-2 • Analog Maximum Ratings
Parameter
Conditions
Min.
Max.
Units
–11.5
14.4
V
–11
14
V
GDEC[1:0] = 01 (±10.24 V range)
–11.5
12
V
GDEC[1:0] = 10 (±5.12 V range)
–6
6
V
GDEC[1:0] = 11 (±2.56 V range)
–3
3
V
Absolute maximum
–0.3
14.4
V
Recommended
–0.3
14
V
–0.3
3
V
TMB_DI_ON = 1 (direct ADC in)
–0.3
3
V
TMB_DI_ON = 0 (ADC isolated)
–0.3
3
V
–0.3
3
V
–0.3
3.6
V
ABPS[n] pad voltage (relative to ground) GDEC[1:0] = 00 (±15.36 V range)
Absolute maximum
Recommended
CM[n] pad voltage relative to ground)
CMB_DI_ON = 0 (ADC isolated)
COMP_EN = 0 (comparator off, for the
associated even-numbered comparator)
CMB_DI_ON = 0 (ADC isolated)
COMP_EN = 1 (comparator on)
TM[n] pad voltage (relative to ground)
COMP_EN = 1(comparator on)
TMB_DI_ON = 1 (direct ADC in)
ADC[n] pad voltage (relative to ground)
2- 2
R ev isio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Table 2-3 • Recommended Operating Conditions5,6
Parameter1
Symbol
TJ
VCC
Commercial
Industrial
Units
0 to +85
–40 to +100
°C
1.425 to 1.575
1.425 to 1.575
V
1.425 to 3.6
1.425 to 3.6
V
3.15 to 3.45
3.15 to 3.45
V
0 to 3.6
0 to 3.6
V
1.425 to 1.575
1.425 to 1.575
V
1.425 to 1.575
1.425 to 1.575
V
1.7 to 1.9
1.7 to 1.9
V
2.5 V DC supply voltage
2.3 to 2.7
2.3 to 2.7
V
3.3 V DC supply voltage
3.0 to 3.6
3.0 to 3.6
V
2.375 to 2.625
2.375 to 2.625
V
3.0 to 3.6
3.0 to 3.6
V
Junction temperature
2
VJTAG
VPP
1.5 V DC core supply voltage
JTAG DC voltage
Programming voltage
Programming
mode3
4
Operation
VCCPLLx
Analog power supply (PLL)
VCCFPGAIOBx/ 1.5 V DC supply voltage
VCCMSSIOBx5
1.8 V DC supply voltage
LVDS differential I/O
LVPECL differential I/O
VCC33A6
Analog clean 3.3 V supply to the analog circuitry
3.15 to 3.45
3.15 to 3.45
V
VCC33ADCx6
Analog 3.3 V supply to ADC
3.15 to 3.45
3.15 to 3.45
V
VCC33AP6
Analog clean 3.3 V supply to the charge pump
3.15 to 3.45
3.15 to 3.45
V
VCC33SDDx6
Analog 3.3 V supply to sigma-delta DAC
3.15 to 3.45
3.15 to 3.45
V
VAREFx
Voltage reference for ADC
2.527 to 3.3
2.527 to 3.3
V
VCCRCOSC
Analog supply to the integrated RC oscillator
3.15 to 3.45
3.15 to 3.45
V
VDDBAT
External battery supply
2.7 to 3.63
2.7 to 3.63
V
VCCMAINXTAL6
Analog supply to the main crystal oscillator
3.15 to 3.45
3.15 to 3.45
V
VCCLPXTAL6
Analog supply to the low power 32 KHz crystal
oscillator
3.15 to 3.45
3.15 to 3.45
V
VCCENVM
Embedded nonvolatile memory supply
1.425 to 1.575
1.425 to 1.575
V
VCCESRAM
Embedded SRAM supply
1.425 to 1.575
1.425 to 1.575
V
VCC15A2
Analog 1.5 V supply to the analog circuitry
1.425 to 1.575
1.425 to 1.575
V
VCC15ADCx2
Analog 1.5 V supply to the ADC
1.425 to 1.575
1.425 to 1.575
V
Notes:
1. All parameters representing voltages are measured with respect to GND unless otherwise specified.
2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC,
VCC15A, and VCC15ADCx.
3. The Programming temperature range supported is Tambient = 0°C to 85°C.
4. VPP can be left floating during operation (not programming mode).
5. The ranges given here are for power supplies only. The recommended input voltage ranges specific to each I/O
standard are given in Table 2-19 on page 2-23. VCCxxxxIOBx should be at the same voltage within a given I/O bank.
6. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A,
VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL.
7.
R ev i si o n 1 0
2 -3
SmartFusion DC and Switching Characteristics
Table 2-4 • FPGA and Embedded Flash Programming, Storage and Operating Limits
Product Grade
Commercial
Industrial
Storage Temperature
Element
Grade Programming
Cycles
Retention
Min. TJ = 0°C
FPGA/FlashROM
500
20 years
Max. TJ = 85°C
Embedded Flash
< 1,000
20 years
< 10,000
10 years
< 15,000
5 years
Min. TJ = –40°C
FPGA/FlashROM
500
20 years
Max. TJ = 100°C
Embedded Flash
< 1,000
20 years
< 10,000
10 years
< 15,000
5 years
Table 2-5 • Overshoot and Undershoot Limits 1
VCCxxxxIOBx
Average VCCxxxxIOBx–GND Overshoot or Undershoot
Duration as a Percentage of Clock Cycle2
Maximum Overshoot/
Undershoot2
10%
1.4 V
5%
1.49 V
2.7 V or less
3V
10%
1.1 V
5%
1.19 V
3.3 V
10%
0.79 V
5%
0.88 V
3.6 V
10%
0.45 V
5%
0.54 V
Notes:
1. Based on reliability requirements at 85°C.
2. The duration is allowed at one out of six clock cycles. If the overshoot/undershoot occurs at one out of two cycles, the
maximum overshoot/undershoot has to be reduced by 0.15 V.
3. This table does not provide PCI overshoot/undershoot limits.
Power Supply Sequencing Requirement
SmartFusion cSoCs have an on-chip 1.5 V regulator, but usage of an external 1.5 V supply is also
allowed while the on-chip regulator is disabled. In that case, the 3.3 V supplies (VCC33A, etc.) should be
powered before 1.5 V (VCC, etc.) supplies. The 1.5 V supplies should be enabled only after 3.3 V
supplies reach a value higher than 2.7 V.
I/O Power-Up and Supply Voltage Thresholds for Power-On Reset
(Commercial and Industrial)
Sophisticated power-up management circuitry is designed into every SmartFusion cSoC. These circuits
ensure easy transition from the powered-off state to the powered-up state of the device. In addition, the
I/O will be in a known state through the power-up sequence. The basic principle is shown in Figure 2-1
on page 2-6.
There are five regions to consider during power-up.
SmartFusion I/Os are activated only if ALL of the following three conditions are met:
1. VCC and VCCxxxxIOBx are above the minimum specified trip points (Figure 2-1 on page 2-6).
2. VCCxxxxIOBx > VCC – 0.75 V (typical)
3. Chip is in the SoC Mode.
2- 4
R ev isio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
VCCxxxxIOBx Trip Point:
Ramping up: 0.6 V < trip_point_up < 1.2 V
Ramping down: 0.5 V < trip_point_down < 1.1 V
VCC Trip Point:
Ramping up: 0.6 V < trip_point_up < 1.1 V
Ramping down: 0.5 V < trip_point_down < 1 V
VCC and VCCxxxxIOBx ramp-up trip points are about 100 mV higher than ramp-down trip points. This
specifically built-in hysteresis prevents undesirable power-up oscillations and current surges. Note the
following:
•
By default, during programming I/Os become tristated and weakly pulled up to VCCxxxxIOBx.
You can modify the I/O states during programming in FlashPro. For more details, refer to
"Specifying I/O States During Programming" on page 1-3.
•
JTAG supply, PLL power supplies, and charge pump VPUMP supply have no influence on I/O
behavior.
PLL Behavior at Brownout Condition
The Microsemi SoC Products Group recommends using monotonic power supplies or voltage regulators
to ensure proper power-up behavior. Power ramp-up should be monotonic at least until VCC and
VCCPLLx exceed brownout activation levels. The VCC activation level is specified as 1.1 V worst-case
(see Figure 2-1 on page 2-6 for more details).
When PLL power supply voltage and/or VCC levels drop below the VCC brownout levels (0.75 V ± 0.25
V), the PLL output lock signal goes low and/or the output clock is lost. Refer to the "Power-Up/-Down
Behavior of Low Power Flash Devices" chapter of the ProASIC3 FPGA Fabric User’s Guide for
information on clock and lock recovery.
Internal Power-Up Activation Sequence
1. Core
2. Input buffers
Output buffers, after 200 ns delay from input buffer activation
R ev i si o n 1 0
2 -5
SmartFusion DC and Switching Characteristics
VCC = VCCxxxxIOBx + VT
where VT can be from 0.58 V to 0.9 V (typically 0.75 V)
VCC
VCC = 1.575 V
Region 4: I/O
buffers are ON.
I/Os are functional
(except differential
but slower because
Region 1: I/O Buffers are OFF
VCCxxxxIOBx
Region 5: I/O buffers are ON
and power supplies are within
specification.
I/Os meet the entire datasheet
and timer specifications for
speed, VIH / VIL , VOH / VOL , etc.
below specification. For the
same reason, input buffers do not
meet VIH / VIL levels, and output
buffers do not meet VOH / VOL levels.
VCC = 1.425 V
Region 2: I/O buffers are ON.
I/Os are functional (except differential inputs)
but slower because VCCxxxxIOBx / VCC are
below specification. For the same reason, input
buffers do not meet VIH / VIL levels, and
output buffers do not meet VOH / VOL levels.
Activation trip point:
Va = 0.85 V ± 0.25 V
Deactivation trip point:
Vd = 0.75 V ± 0.25 V
Region 1: I/O buffers are OFF
Activation trip point:
Va = 0.9 V ± 0.3 V
Deactivation trip point:
Vd = 0.8 V ± 0.3 V
Figure 2-1 •
2- 6
Region 3: I/O buffers are ON.
I/Os are functional; I/O DC
specifications are met,
but I/Os are slower because
the VCC is below specification.
Min VCCxxxxIOBx datasheet specification
voltage at a selected I/O
standard; i.e., 1.425 V or 1.7 V
or 2.3 V or 3.0 V
I/O State as a Function of VCCxxxxIOBx and VCC Voltage Levels
R ev isio n 1 0
VCCxxxxIOBx
SmartFusion Customizable System-on-Chip (cSoC)
Thermal Characteristics
Introduction
The temperature variable in the SoC Products Group Designer software refers to the junction
temperature, not the ambient, case, or board temperatures. This is an important distinction because
dynamic and static power consumption will cause the chip's junction temperature to be higher than the
ambient, case, or board temperatures. EQ 1 through EQ 3 give the relationship between thermal
resistance, temperature gradient, and power.
T J – A
 JA = -----------------P
EQ 1
TJ – TB
 JB = ------------------P
EQ 2
 JC
TJ – TC
= ------------------P
EQ 3
where
JA = Junction-to-air thermal resistance
JB = Junction-to-board thermal resistance
JC = Junction-to-case thermal resistance
TJ
= Junction temperature
TA
= Ambient temperature
TB
= Board temperature (measured 1.0 mm away from the
package edge)
TC
= Case temperature
P
= Total power dissipated by the device
Table 2-6 • Package Thermal Resistance
JA
Still Air
1.0 m/s
2.5 m/s
JC
JB
Units
A2F200M3F-FG256
33.7
30.0
28.3
9.3
24.8
°C/W
A2F200M3F-FG484
21.8
18.2
16.7
7.7
16.8
°C/W
A2F200M3F-CS288
26.6
20.2
18.1
7.3
9.4
°C/W
A2F200M3F-PQG208I
38.5
34.6
33.1
0.7
31.6
°C/W
Product
R ev i si o n 1 0
2 -7
SmartFusion DC and Switching Characteristics
Theta-JA
Junction-to-ambient thermal resistance (JA) is determined under standard conditions specified by
JEDEC (JESD-51), but it has little relevance in actual performance of the product. It should be used with
caution but is useful for comparing the thermal performance of one package to another.
A sample calculation showing the maximum power dissipation allowed for the A2F200-FG484 package
under forced convection of 1.0 m/s and 75°C ambient temperature is as follows:
T J(MAX) – T A(MAX)
Maximum Power Allowed = -------------------------------------------- JA
EQ 4
where
JA
= 19.00°C/W (taken from Table 2-6 on page 2-7).
TA
= 75.00°C
100.00°C – 75.00°C
Maximum Power Allowed = ---------------------------------------------------- = 1.3 W
19.00°C/W
EQ 5
The power consumption of a device can be calculated using the Microsemi SoC Products Group power
calculator. The device's power consumption must be lower than the calculated maximum power
dissipation by the package. If the power consumption is higher than the device's maximum allowable
power dissipation, a heat sink can be attached on top of the case, or the airflow inside the system must
be increased.
Theta-JB
Junction-to-board thermal resistance (JB) measures the ability of the package to dissipate heat from the
surface of the chip to the PCB. As defined by the JEDEC (JESD-51) standard, the thermal resistance
from junction to board uses an isothermal ring cold plate zone concept. The ring cold plate is simply a
means to generate an isothermal boundary condition at the perimeter. The cold plate is mounted on a
JEDEC standard board with a minimum distance of 5.0 mm away from the package edge.
Theta-JC
Junction-to-case thermal resistance (JC) measures the ability of a device to dissipate heat from the
surface of the chip to the top or bottom surface of the package. It is applicable for packages used with
external heat sinks. Constant temperature is applied to the surface in consideration and acts as a
boundary condition. This only applies to situations where all or nearly all of the heat is dissipated through
the surface in consideration.
Calculation for Heat Sink
For example, in a design implemented in an A2F200-FG484 package with 2.5 m/s airflow, the power
consumption value using the power calculator is 3.00 W. The user-dependent Ta and Tj are given as
follows:
TJ
=
100.00°C
TA =
70.00°C
From the datasheet:
2- 8
JA
=
17.00°C/W
JC
=
8.28°C/W
R ev isio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
TJ – TA
100°C – 70°C
P = ------------------- = ------------------------------------ = 1.76 W
 JA
17.00 W
EQ 6
The 1.76 W power is less than the required 3.00 W. The design therefore requires a heat sink, or the
airflow where the device is mounted should be increased. The design's total junction-to-air thermal
resistance requirement can be estimated by EQ 7:
TJ – TA
100°C – 70°C
 JA(total) = ------------------- = ------------------------------------ = 10.00°C/W
P
3.00 W
EQ 7
Determining the heat sink's thermal performance proceeds as follows:
 JA(TOTAL) =  JC +  CS +  SA
EQ 8
where
JA
SA
=
0.37°C/W
=
Thermal resistance of the interface material between
the case and the heat sink, usually provided by the
thermal interface manufacturer
=
Thermal resistance of the heat sink in °C/W
 SA =  JA(TOTAL) –  JC –  CS
EQ 9
 SA = 13.33°C/W – 8.28°C/W – 0.37°C/W = 5.01°C/W
A heat sink with a thermal resistance of 5.01°C/W or better should be used. Thermal resistance of heat
sinks is a function of airflow. The heat sink performance can be significantly improved with increased
airflow.
Carefully estimating thermal resistance is important in the long-term reliability of an FPGA. Design
engineers should always correlate the power consumption of the device with the maximum allowable
power dissipation of the package selected for that device.
Note: The junction-to-air and junction-to-board thermal resistances are based on JEDEC standard
(JESD-51) and assumptions made in building the model. It may not be realized in actual
application and therefore should be used with a degree of caution. Junction-to-case thermal
resistance assumes that all power is dissipated through the case.
Temperature and Voltage Derating Factors
Table 2-7 • Temperature and Voltage Derating Factors for Timing Delays
(normalized to TJ = 85°C, worst-case VCC = 1.425 V)
Array
Voltage VCC
(V)
Junction Temperature (°C)
–40°C
0°C
25°C
70°C
85°C
100°C
1.425
0.86
0.91
0.93
0.98
1.00
1.02
1.500
0.81
0.86
0.88
0.93
0.95
0.96
1.575
0.78
0.83
0.85
0.90
0.91
0.93
R ev i si o n 1 0
2 -9
SmartFusion DC and Switching Characteristics
Calculating Power Dissipation
Quiescent Supply Current
3.3 V
0V
0V
0V
Off
MAINXTAL (enable/disable)
VCCRCOSC
0V
LPXTAL (enable/disable)
VDDBAT
0V
eNVM (reset/off)
VCC / VCC15A / VCC15ADCx
VCCPLLx, VCCENVM,
VCCESRAM
0V
VPP
VCC33A / VCC33ADCx
VCC33AP / VCC33SDDx
VCCMAINXTAL / VCCLPXTAL
Time Keeping mode
VJTAG
Modes and Power
Supplies
VCCxxxxIOBx
VCCFPGAIOBx
VCCMSSIOBx
Table 2-8 • Power Supplies Configuration
Enable Disable
Standby mode
On*
3.3 V
1.5 V
N/A
3.3 V
N/A
N/A
Reset
Enable Disable
SoC mode
On*
3.3 V
1.5 V
N/A
3.3 V
N/A
N/A
On
Enable Enable
Note: *On means proper voltage is applied. Refer to Table 2-3 on page 2-3 for recommended operating conditions.
Table 2-9 • Quiescent Supply Current Characteristics
A2F060
Parameter
Modes
A2F200
A2F500
1.5 V
Domain
3.3 V
Domain
1.5 V
Domain
3.3 V
Domain
1.5 V
Domain
3.3 V
Domain
IDC1
SoC mode
3 mA
2 mA
7 mA
4 mA
16.5 mA
4 mA
IDC2
Standby mode
3 mA
2 mA
7 mA
4 mA
16.5 mA
4 mA
IDC3
Time Keeping mode
N/A
10 µA
N/A
10 µA
N/A
10 µA
Power per I/O Pin
Table 2-10 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
VCCFPGAIOBx (V)
Static Power
PDC7 (mW)
Dynamic Power PAC9
(µW/MHz)
3.3 V LVTTL / 3.3 V LVCMOS
3.3
–
17.55
2.5 V LVCMOS
2.5
–
5.97
1.8 V LVCMOS
1.8
–
2.88
1.5 V LVCMOS (JESD8-11)
1.5
–
2.33
3.3 V PCI
3.3
–
19.21
3.3 V PCI-X
3.3
–
19.21
LVDS
2.5
2.26
0.82
LVPECL
3.3
5.72
1.16
Single-Ended
Differential
2- 10
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Table 2-11 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings
Applicable to MSS I/O Banks
VCCMSSIOBx (V)
Static Power
PDC7 (mW)
Dynamic Power
PAC9 (µW/MHz)
3.3 V LVTTL / 3.3 V LVCMOS
3.3
–
17.21
3.3 V LVCMOS / 3.3 V LVCMOS – Schmitt trigger
3.3
–
20.00
2.5 V LVCMOS
2.5
–
5.55
2.5 V LVCMOS – Schmitt trigger
2.5
–
7.03
1.8 V LVCMOS
1.8
–
2.61
1.8 V LVCMOS – Schmitt trigger
1.8
–
2.72
1.5 V LVCMOS (JESD8-11)
1.5
–
1.98
1.5 V LVCMOS (JESD8-11) – Schmitt trigger
1.5
–
1.93
Single-Ended
Table 2-12 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings*
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
CLOAD (pF)
VCCFPGAIOBx
(V)
Static Power
PDC8 (mW)
Dynamic Power
PAC10 (µW/MHz)
3.3 V LVTTL / 3.3 V LVCMOS
35
3.3
–
475.66
2.5 V LVCMOS
35
2.5
–
270.50
1.8 V LVCMOS
35
1.8
–
152.17
1.5 V LVCMOS (JESD8-11)
35
1.5
–
104.44
3.3 V PCI
10
3.3
–
202.69
3.3 V PCI-X
10
3.3
–
202.69
LVDS
–
2.5
7.74
88.26
LVPECL
–
3.3
19.54
164.99
Single-Ended
Differential
Note: *Dynamic power consumption is given for standard load and software default drive strength and output slew.
Table 2-13 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings
Applicable to MSS I/O Banks
CLOAD (pF)
VCCMSSIOBx (V)
Static Power
PDC8 (mW)2
Dynamic Power
PAC10 (µW/MHz)3
3.3 V LVTTL / 3.3 V LVCMOS
10
3.3
–
155.65
2.5 V LVCMOS
10
2.5
–
88.23
1.8 V LVCMOS
10
1.8
–
45.03
1.5 V LVCMOS (JESD8-11)
10
1.5
–
31.01
Single-Ended
R ev i si o n 1 0
2- 11
SmartFusion DC and Switching Characteristics
Power Consumption of Various Internal Resources
Table 2-14 • Different Components Contributing to Dynamic Power Consumption in SmartFusion cSoCs
Power Supply
Parameter
Definition
Name
Device
Domain A2F060 A2F200 A2F500
Units
PAC1
Clock contribution of a Global Rib
VCC
1.5 V
3.39
3.40
5.05
µW/MHz
PAC2
Clock contribution of a Global Spine
VCC
1.5 V
1.14
1.83
2.50
µW/MHz
PAC3
Clock contribution of a VersaTile
row
VCC
1.5 V
1.15
1.15
1.15
µW/MHz
PAC4
Clock contribution of a VersaTile
used as a sequential module
VCC
1.5 V
0.12
0.12
0.12
µW/MHz
PAC5
First contribution of a VersaTile
used as a sequential module
VCC
1.5 V
0.07
0.07
0.07
µW/MHz
PAC6
Second contribution of a VersaTile
used as a sequential module
VCC
1.5 V
0.29
0.29
0.29
µW/MHz
PAC7
Contribution of a VersaTile used as
a combinatorial module
VCC
1.5 V
0.29
0.29
0.29
µW/MHz
PAC8
Average contribution of a routing net
VCC
1.5 V
1.04
0.79
0.79
µW/MHz
PAC9
Contribution of an I/O input pin VCCxxxxIOBx/VCC See Table 2-10 and Table 2-11 on page 2-11
(standard dependent)
PAC10
Contribution of an I/O output pin VCCxxxxIOBx/VCC See Table 2-12 and Table 2-13 on page 2-11
(standard dependent)
PAC11
Average contribution of a RAM
block during a read operation
VCC
1.5 V
25.00
µW/MHz
PAC12
Average contribution of a RAM
block during a write operation
VCC
1.5 V
30.00
µW/MHz
PAC13
Dynamic Contribution for PLL
VCC
1.5 V
2.60
µW/MHz
PAC15
Contribution of NVM block during a
read operation (F < 33MHz)
VCC
1.5 V
358.00
µW/MHz
PAC16
1st contribution of NVM block during
a read operation (F > 33MHz)
VCC
1.5 V
12.88
mW
PAC17
2nd contribution of NVM block
during a read operation (F > 33MHz)
VCC
1.5 V
4.80
µW/MHz
PAC18
Main Crystal Oscillator contribution
VCCMAINXTAL
3.3 V
1.98
mW
PAC19a
RC Oscillator contribution
VCCRCOSC
3.3 V
3.30
mW
PAC19b
RC Oscillator contribution
VCC
1.5 V
3.00
mW
PAC20a
Analog Block Dynamic
Contribution of the ADC
Power
VCC33ADCx
3.3 V
8.25
mW
PAC20b
Analog Block Dynamic
Contribution of the ADC
Power
VCC15ADCx
1.5 V
3.00
mW
PAC21
Low Power
contribution
Oscillator
VCCLPXTAL
3.3 V
33.00
µW
PAC22
MSS Dynamic Power Contribution –
Running Drysthone at 100MHz1
VCC
1.5 V
67.50
mW
PAC23
Temperature Monitor Power
Contribution
See Table 2-94 on
page 2-78
–
1.23
mW
2- 12
Crystal
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Table 2-14 • Different Components Contributing to Dynamic Power Consumption in SmartFusion cSoCs
Power Supply
Parameter
Device
Definition
Name
Domain A2F060 A2F200 A2F500
Units
PAC24
Current Monitor Power Contribution
See Table 2-93 on
page 2-77
–
1.03
mW
PAC25
ABPS Power Contribution
See Table 2-97 on
page 2-82
–
0.70
mW
PAC26
Sigma-Delta DAC Power
Contribution2
See Table 2-99 on
page 2-85
–
0.58
mW
PAC27
Comparator Power Contribution
See Table 2-98 on
page 2-84
–
1.02
mW
PAC28
Voltage Regulator Power
Contribution3
See Table 2-100 on
page 2-87
–
36.30
mW
Notes:
1. For a different use of MSS peripherals and resources, refer to SmartPower.
2. Assumes Input = Half Scale Operation mode.
3. Assumes 100 mA load on 1.5 V domain.
Table 2-15 • Different Components Contributing to the Static Power Consumption in SmartFusion cSoCs
Power Supply
Parameter
Device
Definition
Name
PDC1
Core static power contribution in
SoC mode
VCC
1.5 V
11.10
23.70
37.95
mW
PDC2
Device static power contribution in
Standby Mode
See Table 2-8 on
page 2-10
–
11.10
23.70
37.95
mW
PDC3
Device static power contribution in
Time Keeping mode
See Table 2-8 on
page 2-10
3.3 V
33.00
33.00
33.00
µW
PDC7
Static contribution per input pin VCCxxxxIOBx/VCC See Table 2-10 and Table 2-11 on page 2-11.
(standard dependent contribution)
PDC8
Static contribution per output pin VCCxxxxIOBx/VCC See Table 2-12 and Table 2-13 on page 2-11.
(standard dependent contribution)
PDC9
Static contribution per PLL
VCC
Domain A2F060 A2F200 A2F200 Units
1.5 V
2.55
2.55
2.55
mW
Table 2-16 • eNVM Dynamic Power Consumption
Parameter
Description
eNVM System eNVM array operating power
Condition
Idle
Read operation
PNVMCTRL
Min.
Typ.
Max.
Units
795
µA
See Table 2-14 on page 2-12.
Erase
900
µA
Write
900
µA
20
µW/MHz
eNVM controller operating power
R ev i si o n 1 0
2- 13
SmartFusion DC and Switching Characteristics
Power Calculation Methodology
This section describes a simplified method to estimate power consumption of an application. For more
accurate and detailed power estimations, use the SmartPower tool in the Libero SoC software.
The power calculation methodology described below uses the following variables:
•
The number of PLLs/CCCs as well as the number and the frequency of each output clock
generated
•
The number of combinatorial and sequential cells used in the design
•
The internal clock frequencies
•
The number and the standard of I/O pins used in the design
•
The number of RAM blocks used in the design
•
The number of eNVM blocks used in the design
•
The analog block used in the design, including the temperature monitor, current monitor, ABPS,
sigma-delta DAC, comparator, low power crystal oscillator, RC oscillator and the main crystal
oscillator
•
Toggle rates of I/O pins as well as VersaTiles—guidelines are provided in Table 2-17 on
page 2-18.
•
Enable rates of output buffers—guidelines are provided for typical applications in Table 2-18 on
page 2-18.
•
Read rate and write rate to the memory—guidelines are provided for typical applications in
Table 2-18 on page 2-18.
•
Read rate to the eNVM blocks
The calculation should be repeated for each clock domain defined in the design.
Methodology
Total Power Consumption—PTOTAL
SoC Mode, Standby Mode, and Time Keeping Mode.
PTOTAL = PSTAT + PDYN
PSTAT is the total static power consumption.
PDYN is the total dynamic power consumption.
Total Static Power Consumption—PSTAT
SoC Mode
PSTAT = PDC1 + (NINPUTS * PDC7) + (NOUTPUTS * PDC8) + (NPLLS * PDC9)
NINPUTS is the number of I/O input buffers used in the design.
NOUTPUTS is the number of I/O output buffers used in the design.
NPLLS is the number of PLLs available in the device.
Standby Mode
PSTAT = PDC2
Time Keeping Mode
PSTAT = PDC3
Total Dynamic Power Consumption—PDYN
SoC Mode
PDYN = PCLOCK + PS-CELL + PC-CELL + PNET + PINPUTS + POUTPUTS + PMEMORY + PPLL + PeNVM +
PXTL-OSC + PRC-OSC + PAB + PLPXTAL-OSC + PMSS
2- 14
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Standby Mode
PDYN = PRC-OSC + PLPXTAL-OSC
Time Keeping Mode
PDYN = PLPXTAL-OSC
Global Clock Dynamic Contribution—PCLOCK
SoC Mode
PCLOCK = (PAC1 + NSPINE * PAC2 + NROW * PAC3 + NS-CELL * PAC4) * FCLK
NSPINE is the number of global spines used in the user design—guidelines are provided in the
"Device Architecture" chapter of the SmartFusion FPGA Fabric User's Guide.
NROW is the number of VersaTile rows used in the design—guidelines are provided in the "Device
Architecture" chapter of the SmartFusion FPGA Fabric User's Guide.
FCLK is the global clock signal frequency.
NS-CELL is the number of VersaTiles used as sequential modules in the design.
Standby Mode and Time Keeping Mode
PCLOCK = 0 W
Sequential Cells Dynamic Contribution—PS-CELL
SoC Mode
PS-CELL = NS-CELL * (PAC5 + (1 / 2) * PAC6) * FCLK
NS-CELL is the number of VersaTiles used as sequential modules in the design. When a multi-tile
sequential cell is used, it should be accounted for as 1.
1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-17 on page 2-18.
FCLK is the global clock signal frequency.
Standby Mode and Time Keeping Mode
PS-CELL = 0 W
Combinatorial Cells Dynamic Contribution—PC-CELL
SoC Mode
PC-CELL = NC-CELL* (1 / 2) * PAC7 * FCLK
NC-CELL is the number of VersaTiles used as combinatorial modules in the design.
1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-17 on page 2-18.
FCLK is the global clock signal frequency.
Standby Mode and Time Keeping Mode
PC-CELL = 0 W
Routing Net Dynamic Contribution—PNET
SoC Mode
PNET = (NS-CELL + NC-CELL) * (1 / 2) * PAC8 * FCLK
NS-CELL is the number VersaTiles used as sequential modules in the design.
NC-CELL is the number of VersaTiles used as combinatorial modules in the design.
1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-17 on page 2-18.
FCLK is the frequency of the clock driving the logic including these nets.
R ev i si o n 1 0
2- 15
SmartFusion DC and Switching Characteristics
Standby Mode and Time Keeping Mode
PNET = 0 W
I/O Input Buffer Dynamic Contribution—PINPUTS
SoC Mode
PINPUTS = NINPUTS * (2 / 2) * PAC9 * FCLK
Where:
NINPUTS is the number of I/O input buffers used in the design.
2 is the I/O buffer toggle rate—guidelines are provided in Table 2-17 on page 2-18.
FCLK is the global clock signal frequency.
Standby Mode and Time Keeping Mode
PINPUTS = 0 W
I/O Output Buffer Dynamic Contribution—POUTPUTS
SoC Mode
POUTPUTS = NOUTPUTS * (2 / 2) * 1 * PAC10 * FCLK
Where:
NOUTPUTS is the number of I/O output buffers used in the design.
2 is the I/O buffer toggle rate—guidelines are provided in Table 2-17 on page 2-18.
1 is the I/O buffer enable rate—guidelines are provided in Table 2-18 on page 2-18.
FCLK is the global clock signal frequency.
Standby Mode and Time Keeping Mode
POUTPUTS = 0 W
FPGA Fabric SRAM Dynamic Contribution—PMEMORY
SoC Mode
PMEMORY = (NBLOCKS * PAC11 * 2 * FREAD-CLOCK) + (NBLOCKS * PAC12 * 3 * FWRITE-CLOCK)
Where:
NBLOCKS is the number of RAM blocks used in the design.
FREAD-CLOCK is the memory read clock frequency.
2
is the RAM enable rate for read operations—guidelines are provided in Table 2-18 on
page 2-18.
3 the RAM enable rate for write operations—guidelines are provided in Table 2-18 on page 2-18.
FWRITE-CLOCK is the memory write clock frequency.
Standby Mode and Time Keeping Mode
PMEMORY = 0 W
PLL/CCC Dynamic Contribution—PPLL
SoC Mode
PPLL = PAC13 * FCLKOUT
FCLKIN is the input clock frequency.
FCLKOUT is the output clock frequency.1
Standby Mode and Time Keeping Mode
1.The PLL dynamic contribution depends on the input clock frequency, the number of output clock signals generated by the
PLL, and the frequency of each output clock. If a PLL is used to generate more than one output clock, include each output
clock in the formula output clock by adding its corresponding contribution (PAC14 * FCLKOUT product) to the total PLL
contribution.
2- 16
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
PPLL = 0 W
Embedded Nonvolatile Memory Dynamic Contribution—PeNVM
SoC Mode
The eNVM dynamic power consumption is a piecewise linear function of frequency.
PeNVM = NeNVM-BLOCKS * 4 * PAC15 * FREAD-eNVM when FREAD-eNVM 33 MHz,
PeNVM = NeNVM-BLOCKS * 4 *(PAC16 + PAC17 * FREAD-eNVM) when FREAD-eNVM > 33 MHz
Where:
NeNVM-BLOCKS is the number of eNVM blocks used in the design.
4 is the eNVM enable rate for read operations. Default is 0 (eNVM mainly in idle state).
FREAD-eNVM is the eNVM read clock frequency.
Standby Mode and Time Keeping Mode
PeNVM = 0 W
Main Crystal Oscillator Dynamic Contribution—PXTL-OSC
SoC Mode
PXTL-OSC = PAC18
Standby Mode
PXTL-OSC = 0 W
Time Keeping Mode
PXTL-OSC = 0 W
Low Power Oscillator Crystal Dynamic Contribution—PLPXTAL-OSC
Operating, Standby, and Time Keeping Mode
PLPXTAL-OSC = PAC21
RC Oscillator Dynamic Contribution—PRC-OSC
SoC Mode
PRC-OSC = PAC19A + PAC19B
Standby Mode and Time Keeping Mode
PRC-OSC = 0 W
Analog System Dynamic Contribution—PAB
SoC Mode
PAB = PAC23 * NTM + PAC24 * NCM + PAC25 * NABPS + PAC26 * NSDD + PAC27 * NCOMP + PADC * NADC
+ PVR
Where:
NCM is the number of current monitor blocks
NTM is the number of temperature monitor blocks
NSDD is the number of sigma-delta DAC blocks
NABPS is the number of ABPS blocks
NADC is the number of ADC blocks
NCOMP is the number of comparator blocks
PVR= PAC28
PADC= PAC20A + PAC20B
R ev i si o n 1 0
2- 17
SmartFusion DC and Switching Characteristics
Microcontroller Subsystem Dynamic Contribution—PMSS
SoC Mode
PMSS = PAC22
Guidelines
Toggle Rate Definition
A toggle rate defines the frequency of a net or logic element relative to a clock. It is a percentage. If the
toggle rate of a net is 100%, this means that the net switches at half the clock frequency. Below are some
examples:
•
The average toggle rate of a shift register is 100%, as all flip-flop outputs toggle at half of the clock
frequency.
•
The average toggle rate of an 8-bit counter is 25%:
–
Bit 0 (LSB) = 100%
–
Bit 1 = 50%
–
Bit 2 = 25%
–
…
–
Bit 7 (MSB) = 0.78125%
–
Average toggle rate = (100% + 50% + 25% + 12.5% + . . . 0.78125%) / 8.
Enable Rate Definition
Output enable rate is the average percentage of time during which tristate outputs are enabled. When
non-tristate output buffers are used, the enable rate should be 100%.
Table 2-17 • Toggle Rate Guidelines Recommended for Power Calculation
Component
1
2
Definition
Guideline
Toggle rate of VersaTile outputs
10%
I/O buffer toggle rate
10%
Table 2-18 • Enable Rate Guidelines Recommended for Power Calculation
Component
2- 18
Definition
Guideline
1
I/O output buffer enable rate
2
FPGA fabric
operations
read
12.5%
3
FPGA fabric SRAM enable rate for write
operations
12.5%
4
eNVM enable rate for read operations
< 5%
SRAM
enable
Toggle rate of the logic driving the
output buffer
rate
R ev i sio n 1 0
for
SmartFusion Customizable System-on-Chip (cSoC)
User I/O Characteristics
Timing Model
I/O Module
(Non-Registered)
Combinational Cell
Combinational Cell
Y
LVPECL (applicable to
FPGA /O bank, EMC pin)
Y
tPD = 0.57 ns
tPD = 0.49 ns
tDP = 1.53 ns
I/O Module
(Non-Registered)
Combinational Cell
Y
LVTTL Output drive strength = 12 mA
High slew rate
tDP = 2.81 ns (FPGA I/O Bank, EMC pin)
tPD = 0.89 ns
I/O Module
(Non-Registered)
Combinational Cell
I/O Module
(Registered)
Y
LVTTL Output drive strength = 8 mA
High slew rate
tDP = 3.87 ns (FPGA I/O Bank, EMC pin)
tPY = 1.46 ns
LVPECL
(Applicable
to FPGA
I/O Bank,
EMC pin)
D
tPD = 0.51 ns
Q
I/O Module
(Non-Registered)
Combinational Cell
Y
tICLKQ = 0.24 ns
tISUD = 0.27 ns
LVCMOS 1.5 V Output drive strength = 4 mA
High slew rate
tDP = 4.13 ns (FPGA I/O Bank, EMC pin)
tPD = 0.48 ns
Input LVTTL
Clock
Register Cell
tPY = 0.81 ns (FPGA I/O Bank, EMC pin)
D
Combinational Cell
Y
Q
I/O Module
(Non-Registered)
LVDS,
BLVDS,
M-LVDS
(Applicable for
FPGA I/O Bank,
EMC pin)
Figure 2-2 •
D
Q
D
tPD = 0.48 ns
tCLKQ = 0.56 ns
tSUD = 0.44 ns
tPY = 1.55 ns
I/O Module
(Registered)
Register Cell
tCLKQ = 0.56 ns
tSUD = 0.44 ns
Q
LVTTL 3.3 V Output drive
strength = 12 mA High slew rate
tDP = 2.81 ns
(FPGA I/O Bank, EMC pin)
tOCLKQ = 0.60 ns
tOSUD = 0.32 ns
Input LVTTL
Clock
Input LVTTL
Clock
tPY = 0.81 ns
(FPGA I/O Bank, EMC pin)
tPY = 0.81 ns
(FPGA I/O Bank, EMC pin)
Timing Model
Operating Conditions: –1 Speed, Commercial Temperature Range (TJ = 85°C),
Worst Case VCC = 1.425 V
R ev i si o n 1 0
2- 19
SmartFusion DC and Switching Characteristics
tPY
tDIN
D
PAD
Q
DIN
Y
CLK
tPY = MAX(tPY(R), tPY(F))
tDIN = MAX(tDIN(R), tDIN(F))
To Array
I/O Interface
VIH
PAD
Vtrip
Vtrip
VIL
VCC
50%
50%
Y
GND
tPY
(R)
tPY
(F)
VCC
50%
DIN
GND
Figure 2-3 •
2- 20
50%
tDOUT
tDOUT
(R)
(F)
Input Buffer Timing Model and Delays (example)
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
tDOUT
tDP
D Q
D
PAD
DOUT
Std
Load
CLK
From Array
tDP = MAX(tDP(R), tDP(F))
tDOUT = MAX(tDOUT(R), tDOUT(F))
I/O Interface
tDOUT
(R)
D
50%
tDOUT
VCC
(F)
50%
0V
VCC
DOUT
50%
50%
0V
VOH
Vtrip
Vtrip
PAD
tDP
(R)
Figure 2-4 •
VOL
tDP
(F)
Output Buffer Model and Delays (example)
R ev i si o n 1 0
2- 21
SmartFusion DC and Switching Characteristics
tEOUT
D
Q
CLK
E
tZL, tZH, tHZ, tLZ, tZLS, tZHS
EOUT
D
Q
PAD
DOUT
CLK
D
tEOUT = MAX(tEOUT(r), tEOUT(f))
I/O Interface
VCC
D
VCC
50%
tEOUT (F)
50%
E
tEOUT (R)
VCC
50%
EOUT
50%
tZL
PAD
50%
tHZ
Vtrip
tZH
VCCxxxxIOBx
90% VCCxxxxIOBx
Vtrip
VOL
VCC
D
VCC
E
50%
EOUT
PAD
tEOUT (R)
2- 22
tEOUT (F)
VCC
50%
50%
50%
tZLS
tZHS
VOH
Vtrip
Figure 2-5 •
50%
50%
tLZ
Vtrip
VOL
Tristate Output Buffer Timing Model and Delays (example)
R ev i sio n 1 0
10% VCCxxxxIOBx
SmartFusion Customizable System-on-Chip (cSoC)
Overview of I/O Performance
Summary of I/O DC Input and Output Levels – Default I/O Software
Settings
Table 2-19 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial
Conditions—Software Default Settings
Applicable to FPGA I/O Banks
VIL
VIH
VOL
VOH
IOL1 IOH1
mA mA
Drive Slew Min.
Strgth. Rate V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
V
3.3 V LVTTL / 12 mA High –0.3
3.3 V LVCMOS
0.8
2
3.6
0.4
2.4
0.7
1.7
I/O Standard
2.5 V LVCMOS 12 mA High –0.3
12
12
3.6
0.7
1.7
12
12
1.8 V LVCMOS 12 mA High –0.3
0.35 *
0.65*
VCCxxxxIOBx VCCxxxxIOBx
3.6
0.45
VCCxxxxIOBx
– 0.45
12
12
1.5 V LVCMOS 12 mA High –0.3
0.35 *
0.65*
VCCxxxxIOBx VCCxxxxIOBx
3.6
0.25 *
0.75*
VCCxxxxIOBx VCCxxxxIOBx
12
12
3.3 V PCI
Per PCI specifications
3.3 V PCI-X
Per PCI-X specifications
Notes:
1. Currents are measured at 85°C junction temperature.
2. Output slew rate can be extracted by the IBIS Models.
Table 2-20 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial
Conditions—Software Default Settings
Applicable to MSS I/O Banks
VIL
I/O Standard
Drive Slew Min.
Strgth. Rate V
VIH
VOL
VOH
IOL1 IOH1
mA mA
Max.
V
Min.
V
Max.
V
Max.
V
Min.
V
3.3 V LVTTL / 8 mA
3.3 V LVCMOS
High –0.3
0.8
2
3.6
0.4
2.4
8
8
2.5 V LVCMOS 8 mA
High –0.3
0.7
1.7
3.6
0.7
1.7
8
8
1.8 V LVCMOS 4 mA
High –0.3
0.35*
VCCxxxxIOBx
0.65*
VCCxxxxIOBx
3.6
0.45
VCCxxxxIOBx
– 0.45
4
4
1.5 V LVCMOS 2 mA
High –0.3
0.35*
VCCxxxxIOBx
0.65*
VCCxxxxIOBx
3.6
0.25*
0.75*
VCCxxxxIOBx VCCxxxxIOBx
2
2
Notes:
1. Currents are measured at 85°C junction temperature.
2. Output slew rate can be extracted by the IBIS Models.
R ev i si o n 1 0
2- 23
SmartFusion DC and Switching Characteristics
Table 2-21 • Summary of Maximum and Minimum DC Input Levels
Applicable to Commercial Conditions in all I/O Bank Types
Commercial
IIL
IIH
DC I/O Standards
µA
µA
3.3 V LVTTL / 3.3 V LVCMOS
15
15
2.5 V LVCMOS
15
15
1.8 V LVCMOS
15
15
1.5 V LVCMOS
15
15
3.3 V PCI
15
15
3.3 V PCI-X
15
15
Summary of I/O Timing Characteristics – Default I/O Software
Settings
Table 2-22 • Summary of AC Measuring Points Applicable to All I/O Bank Types
Measuring Trip Point (Vtrip)
Standard
3.3 V LVTTL / 3.3 V LVCMOS
1.4 V
2.5 V LVCMOS
1.2 V
1.8 V LVCMOS
0.90 V
1.5 V LVCMOS
0.75 V
3.3 V PCI
0.285 * VCCxxxxIOBx (RR)
0.615 * VCCxxxxIOBx (FF)
3.3 V PCI-X
0.285 * VCCxxxxIOBx (RR)
0.615 * VCCxxxxIOBx (FF)
LVDS
Cross point
LVPECL
Cross point
Table 2-23 • I/O AC Parameter Definitions
Parameter
2- 24
Parameter Definition
tDP
Data to pad delay through the output buffer
tPY
Pad to data delay through the input buffer
tDOUT
Data to output buffer delay through the I/O interface
tEOUT
Enable to output buffer tristate control delay through the I/O interface
tDIN
Input buffer to data delay through the I/O interface
tHZ
Enable to pad delay through the output buffer—High to Z
tZH
Enable to pad delay through the output buffer—Z to High
tLZ
Enable to pad delay through the output buffer—Low to Z
tZL
Enable to pad delay through the output buffer—Z to Low
tZHS
Enable to pad delay through the output buffer with delayed enable—Z to High
tZLS
Enable to pad delay through the output buffer with delayed enable—Z to Low
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
–
0.50 2.73 0.03 1.03 0.32 2.88 2.69 2.62 2.70 4.60 4.41 ns
1.8 V LVCMOS
12 mA
High
35
–
0.50 2.81 0.03 0.95 0.32 2.87 2.38 2.92 3.18 4.58 4.10 ns
1.5 V LVCMOS
12 mA
High
35
–
0.50 3.24 0.03 1.12 0.32 3.30 2.79 3.10 3.27 5.02 4.50 ns
10
251
0.50 2.11 0.03 0.68 0.32 2.15 1.57 2.55 2.82 3.87 3.28 ns
1
0.50 2.11 0.03 0.64 0.32 2.15 1.57 2.55 2.82 3.87 3.28 ns
3.3 V PCI
3.3 V PCI-X
Per PCI spec High
tPY (ns)
Units
35
tZHS (ns)
High
tZLS (ns)
12 mA
tHZ (ns)
2.5 V LVCMOS
tLZ (ns)
0.50 2.81 0.03 0.81 0.32 2.86 2.23 2.55 2.82 4.58 3.94 ns
tZH (ns)
–
tZL (ns)
35
tEOUT (ns)
External Resistor ()
High
tDIN (ns)
Capacitive Load (pF)
12 mA
tDP (ns)
Slew Rate
3.3 V LVTTL /
3.3 V LVCMOS
I/O Standard
tDOUT (ns)
Drive Strength
Table 2-24 • Summary of I/O Timing Characteristics—Software Default Settings
–1 Speed Grade, Worst Commercial-Case Conditions: TJ = 85°C, Worst Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx (per standard)
Applicable to FPGA I/O Banks, Assigned to EMC I/O Pins
Per PCI-X
spec
High
10
25
LVDS
24 mA
High
–
–
0.50 1.53 0.03 1.55
–
–
–
–
–
–
–
ns
LVPECL
24 mA
High
–
–
0.50 1.46 0.03 1.46
–
–
–
–
–
–
–
ns
Notes:
1. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-10 on page 2-39 for
connectivity. This resistor is not required during normal operation.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
tPY (ns)
1.92
0.07
0.78 1.09 0.18 1.96 1.55 1.83 2.04
ns
2.5 V LVCMOS
8 mA
High
10
–
0.18
1.96
0.07
0.99 1.16 0.18 2.00 1.82 1.82 1.93
ns
1.8 V LVCMOS
4 mA
High
10
–
0.18
2.31
0.07
0.91 1.37 0.18 2.35 2.27 1.84 1.87
ns
1.5 V LVCMOS
2 mA
High
10
–
0.18
2.70
0.07
1.07 1.55 0.18 2.75 2.67 1.87 1.85
ns
Units
tDIN (ns)
0.18
tHZ (ns)
tDP (ns)
–
tLZ (ns)
tDOUT (ns)
10
tZH (ns)
External Resistor
High
tZL (ns)
Capacitive Load (pF)
8 mA
tEO UT (ns)
Slew Rate
3.3 V LVTTL /
3.3 V LVCMOS
I/O Standard
tPYS (ns)
Drive Strength
Table 2-25 • Summary of I/O Timing Characteristics—Software Default Settings
–1 Speed Grade, Worst Commercial-Case Conditions: TJ = 85°C, Worst Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx (per standard)
Applicable to MSS I/O Banks
Notes:
1. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-10 on page 2-39 for
connectivity. This resistor is not required during normal operation.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
R ev i si o n 1 0
2- 25
SmartFusion DC and Switching Characteristics
Detailed I/O DC Characteristics
Table 2-26 • Input Capacitance
Symbol
Definition
Conditions
Min.
Max.
Units
CIN
Input capacitance
VIN = 0, f = 1.0 MHz
8
pF
CINCLK
Input capacitance on the clock pin
VIN = 0, f = 1.0 MHz
8
pF
Table 2-27 • I/O Output Buffer Maximum Resistances1
Applicable to FPGA I/O Banks
Standard
3.3 V LVTTL / 3.3 V LVCMOS
2.5 V LVCMOS
1.8 V LVCMOS
1.5 V LVCMOS
3.3 V PCI/PCI-X
Drive Strength
RPULL-DOWN
()2
RPULL-UP
()3
2 mA
100
300
4 mA
100
300
6 mA
50
150
8 mA
50
150
12 mA
25
75
16 mA
17
50
24 mA
11
33
2 mA
100
200
4 mA
100
200
6 mA
50
100
8 mA
50
100
12 mA
25
50
16 mA
20
40
24 mA
11
22
2 mA
200
225
4 mA
100
112
6 mA
50
56
8 mA
50
56
12 mA
20
22
16 mA
20
22
2 mA
200
224
4 mA
100
112
6 mA
67
75
8 mA
33
37
12 mA
33
37
Per PCI/PCI-X specification
25
75
Notes:
1. These maximum values are provided for information only. Minimum output buffer resistance values
depend on VCCxxxxIOBx, drive strength selection, temperature, and process. For board design
considerations and detailed output buffer resistances, use the corresponding IBIS models located on the
Microsemi SoC Products Group website at http://www.microsemi.com/soc/download/ibis/default.aspx
(also generated by the SoC Products Group Libero SoC toolset).
2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec
3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspe c
2- 26
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Table 2-28 • I/O Output Buffer Maximum Resistances1
Applicable to MSS I/O Banks
Drive Strength
RPULL-DOWN
()2
RPULL-UP
()3
3.3 V LVTTL / 3.3 V LVCMOS
8mA
50
150
2.5 V LVCMOS
8 mA
50
100
1.8 V LVCMOS
4 mA
100
112
1.5 V LVCMOS
2 mA
200
224
Standard
Notes:
1. These maximum values are provided for informational reasons only. Minimum output buffer resistance
values depend on VCCxxxxIOBx, drive strength selection, temperature, and process. For board design
considerations and detailed output buffer resistances, use the corresponding IBIS models located on the
SoC Products Group website at http://www.microsemi.com/soc/download/ibis/default.aspx.
2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec
3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspe c
Table 2-29 • I/O Weak Pull-Up/Pull-Down Resistances
Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values
R(WEAK PULL-UP)1
()
R(WEAK PULL-DOWN)2
()
VCCxxxxIOBx
Min.
Max.
Min.
Max.
3.3 V
10 k
45 k
10 k
45 k
2.5 V
11 k
55 k
12 k
74 k
1.8 V
18 k
70 k
17 k
110 k
1.5 V
19 k
90 k
19 k
140 k
Notes:
1. R(WEAK PULL-UP-MAX) = (VCCImax – VOHspec) / I(WEAK PULL-UP-MIN)
2. R(WEAK PULL-DOWN-MAX) = (VOLspec) / I(WEAK PULL-DOWN-MIN)
R ev i si o n 1 0
2- 27
SmartFusion DC and Switching Characteristics
Table 2-30 • I/O Short Currents IOSH/IOSL
Applicable to FPGA I/O Banks
Drive Strength
IOSL (mA)*
IOSH (mA)*
2 mA
27
25
4 mA
27
25
6 mA
54
51
8 mA
54
51
12 mA
109
103
16 mA
127
132
24 mA
181
268
2 mA
18
16
4 mA
18
16
6 mA
37
32
8 mA
37
32
12 mA
74
65
16 mA
87
83
24 mA
124
169
2 mA
11
9
4 mA
22
17
6 mA
44
35
8 mA
51
45
12 mA
74
91
16 mA
74
91
2 mA
16
13
4 mA
33
25
6 mA
39
32
8 mA
55
66
12 mA
55
66
Per PCI/PCI-X specification
109
103
Drive Strength
IOSL (mA)*
IOSH (mA)*
3.3 V LVTTL / 3.3 V LVCMOS
8 mA
54
51
2.5 V LVCMOS
8 mA
37
32
1.8 V LVCMOS
4 mA
22
17
1.5 V LVCMOS
2 mA
16
13
3.3 V LVTTL / 3.3 V LVCMOS
2.5 V LVCMOS
1.8 V LVCMOS
1.5 V LVCMOS
3.3 V PCI/PCI-X
Note: *TJ = 85°C.
Table 2-31 • I/O Short Currents IOSH/IOSL
Applicable to MSS I/O Banks
Note: *TJ = 85°C
2- 28
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
The length of time an I/O can withstand IOSH/IOSL events depends on the junction temperature. The
reliability data below is based on a 3.3 V, 12 mA I/O setting, which is the worst case for this type of
analysis.
For example, at 100°C, the short current condition would have to be sustained for more than 2200
operation hours to cause a reliability concern. The I/O design does not contain any short circuit
protection, but such protection would only be needed in extremely prolonged stress conditions.
Table 2-32 • Duration of Short Circuit Event before Failure
Temperature
Time before Failure
–40°C
> 20 years
0°C
> 20 years
25°C
> 20 years
70°C
5 years
85°C
2 years
100°C
6 months
Table 2-33 • Schmitt Trigger Input Hysteresis
Hysteresis Voltage Value (typical) for Schmitt Mode Input Buffers
Input Buffer Configuration
Hysteresis Value (typical)
3.3 V LVTTL / LVCMOS / PCI / PCI-X (Schmitt trigger mode)
240 mV
2.5 V LVCMOS (Schmitt trigger mode)
140 mV
1.8 V LVCMOS (Schmitt trigger mode)
80 mV
1.5 V LVCMOS (Schmitt trigger mode)
60 mV
Table 2-34 • I/O Input Rise Time, Fall Time, and Related I/O Reliability
Input Buffer
Input Rise/Fall Time (min.) Input Rise/Fall Time (max.)
Reliability
LVTTL/LVCMOS
No requirement
10 ns *
20 years (100°C)
LVDS/B-LVDS/
M-LVDS/LVPECL
No requirement
10 ns *
10 years (100°C)
Note: *The maximum input rise/fall time is related to the noise induced into the input buffer trace. If the
noise is low, then the rise time and fall time of input buffers can be increased beyond the
maximum value. The longer the rise/fall times, the more susceptible the input signal is to the board
noise. Microsemi SoC Products Group recommends signal integrity evaluation/characterization of
the system to ensure that there is no excessive noise coupling into input signals.
R ev i si o n 1 0
2- 29
SmartFusion DC and Switching Characteristics
Single-Ended I/O Characteristics
3.3 V LVTTL / 3.3 V LVCMOS
Low-Voltage Transistor–Transistor Logic (LVTTL) is a general-purpose standard (EIA/JESD) for 3.3 V
applications. It uses an LVTTL input buffer and push-pull output buffer.
Table 2-35 • Minimum and Maximum DC Input and Output Levels
Applicable to FPGA I/O Banks
3.3 V LVTTL /
3.3 V LVCMOS
VIL
VIH
VOL
VOH
IOL IOH
IOSL
IOSH
mA mA
Max.
mA1
Max.
mA1
IIL
IIH
Drive Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
V
2 mA
–0.3
0.8
2
3.6
0.4
2.4
2
2
27
25
15
15
4 mA
–0.3
0.8
2
3.6
0.4
2.4
4
4
27
25
15
15
6 mA
–0.3
0.8
2
3.6
0.4
2.4
6
6
54
51
15
15
8 mA
–0.3
0.8
2
3.6
0.4
2.4
8
8
54
51
15
15
12 mA
–0.3
0.8
2
3.6
0.4
2.4
12 12
109
103
15
15
16 mA
–0.3
0.8
2
3.6
0.4
2.4
16 16
127
132
15
15
24 mA
–0.3
0.8
2
3.6
0.4
2.4
24 24
181
268
10
10
IIL
IIH
µA2 µA2
Notes:
1. Currents are measured at 100°C junction temperature and maximum voltage.
2. Currents are measured at 85°C junction temperature.
3. Software default selection highlighted in gray.
Table 2-36 • Minimum and Maximum DC Input and Output Levels
Applicable to MSS I/O Banks
3.3 V LVTTL /
3.3 V LVCMOS
VIL
VIH
VOL
VOH
IOL IOH
IOSL
IOSH
mA mA
Max.
mA1
Max.
mA1
54
51
Drive Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
V
8 mA
–0.3
0.8
2
3.6
0.4
2.4
8
8
µA2 µA2
15
Notes:
1. Currents are measured at 100°C junction temperature and maximum voltage.
2. Currents are measured at 85°C junction temperature.
3. Software default selection highlighted in gray.
R to VCCxxxxIOBx for tLZ / tZL / tZLS
R=1K
Test Point
Test Point
35 pF
Datapath
Enable Path
R to GND for tHZ / tZH / tZHS
35 pF for tZH / tZHS / tZL / tZLS
35 pF for tHZ / tLZ
Figure 2-6 •
AC Loading
Table 2-37 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V)
0
Input High (V)
Measuring Point* (V)
VREF (typ.) (V)
CLOAD (pF)
3.3
1.4
–
35
Note: *Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points.
2- 30
R ev i sio n 1 0
15
SmartFusion Customizable System-on-Chip (cSoC)
Timing Characteristics
Table 2-38 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 3.0 V
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
Drive
Strength
Speed
Grade
tDOUT
tDP
tDIN
tPY
tEOUT
tZL
tZH
tLZ
tHZ
tZLS
tZHS
Units
4 mA
Std.
0.60
7.20
0.04
0.97
0.39
7.34
6.18
2.52
2.46
9.39
8.23
ns
–1
0.50
6.00
0.03
0.81
0.32
6.11
5.15
2.10
2.05
7.83
6.86
ns
8 mA
Std.
0.60
4.64
0.04
0.97
0.39
4.73
3.84
2.85
3.02
6.79
5.90
ns
–1
0.50
3.87
0.03
0.81
0.32
3.94
3.20
2.37
2.52
5.65
4.91
ns
12 mA
Std.
0.60
3.37
0.04
0.97
0.39
3.43
2.67
3.07
3.39
5.49
4.73
ns
–1
0.50
2.81
0.03
0.81
0.32
2.86
2.23
2.55
2.82
4.58
3.94
ns
16 mA
Std.
0.60
3.18
0.04
0.97
0.39
3.24
2.43
3.11
3.48
5.30
4.49
ns
–1
0.50
2.65
0.03
0.81
0.32
2.70
2.03
2.59
2.90
4.42
3.74
ns
24 mA
Std.
0.60
2.93
0.04
0.97
0.39
2.99
2.03
3.17
3.83
5.05
4.09
ns
–1
0.50
2.45
0.03
0.81
0.32
2.49
1.69
2.64
3.19
4.21
3.41
ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
Table 2-39 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 3.0 V
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
Drive
Strength
Speed
Grade
tDOUT
tDP
tDIN
tPY
tEOUT
tZL
tZH
tLZ
tHZ
tZLS
tZHS
Units
4 mA
Std.
0.60
9.75
0.04
0.97
0.39
9.93
8.22
2.52
2.31
11.99
10.28
ns
–1
0.50
8.12
0.03
0.81
0.32
8.27
6.85
2.10
1.93
9.99
8.57
ns
8 mA
Std.
0.60
6.96
0.04
0.97
0.39
7.09
5.85
2.84
2.87
9.15
7.91
ns
–1
0.50
5.80
0.03
0.81
0.32
5.91
4.88
2.37
2.39
7.62
6.59
ns
12 mA
Std.
0.60
5.35
0.04
0.97
0.39
5.45
4.58
3.06
3.23
7.51
6.64
ns
–1
0.50
4.46
0.03
0.81
0.32
4.54
3.82
2.55
2.69
6.26
5.53
ns
16 mA
Std.
0.60
5.01
0.04
0.97
0.39
5.10
4.30
3.11
3.32
7.16
6.36
ns
–1
0.50
4.17
0.03
0.81
0.32
4.25
3.58
2.59
2.77
5.97
5.30
ns
24 mA
Std.
0.60
4.67
0.04
0.97
0.39
4.75
4.28
3.16
3.66
6.81
6.34
ns
–1
0.50
3.89
0.03
0.81
0.32
3.96
3.57
2.64
3.05
5.68
5.28
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
Table 2-40 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 3.0 V
Applicable to MSS I/O Banks
Drive
Strength
8 mA
Speed
Grade
tDOUT
tDP
tDIN
tPY
tPYS
tEOUT
tZL
tZH
tLZ
tHZ
Units
Std.
0.22
2.31
0.09
0.94
1.30
0.22
2.35
1.86
2.20
2.45
ns
–1
0.18
1.92
0.07
0.78
1.09
0.18
1.96
1.55
1.83
2.04
ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
R ev i si o n 1 0
2- 31
SmartFusion DC and Switching Characteristics
2.5 V LVCMOS
Low-Voltage CMOS for 2.5 V is an extension of the LVCMOS standard (JESD8-5) used for generalpurpose 2.5 V applications.
Table 2-41 • Minimum and Maximum DC Input and Output Levels
Applicable to FPGA I/O Banks
2.5 V LVCMOS
VIL
VIH
VOL
VOH
IOL IOH
IOSL
IOSH
mA mA
Max.
mA1
Max.
mA1
IIL
IIH
Drive Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
V
2 mA
–0.3
0.7
1.7
2.7
0.7
1.7
2
2
18
16
15
15
4 mA
–0.3
0.7
1.7
2.7
0.7
1.7
4
4
18
16
15
15
6 mA
–0.3
0.7
1.7
2.7
0.7
1.7
6
6
37
32
15
15
8 mA
–0.3
0.7
1.7
2.7
0.7
1.7
8
8
37
32
15
15
12 mA
–0.3
0.7
1.7
2.7
0.7
1.7
12 12
74
65
15 15
16 mA
–0.3
0.7
1.7
2.7
0.7
1.7
16 16
87
83
15
15
24 mA
–0.3
0.7
1.7
2.7
0.7
1.7
24 24
124
169
15
15
IIL
IIH
µA2 µA2
Notes:
1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
2. Currents are measured at 85°C junction temperature.
3. Software default selection highlighted in gray.
Table 2-42 • Minimum and Maximum DC Input and Output Levels
Applicable to MSS I/O Banks
2.5 V LVCMOS
VIL
VIH
VOL
VOH
IOL IOH
IOSL
IOSH
mA mA
Max.
mA1
Max.,
mA1
37
32
Drive Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
V
8 mA
–0.3
0.7
1.7
3.6
0.7
1.7
8
8
µA2 µA2
15
Notes:
1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
2. Currents are measured at 85°C junction temperature.
3. Software default selection highlighted in gray.
R to VCCxxxxIOBx for tLZ / tZL / tZLS
R=1K
Test Point
Test Point
35 pF
Datapath
Enable Path
R to GND for tHZ / tZH / tZHS
35 pF for tZH / tZHS / tZL / tZLS
35 pF for tHZ / tLZ
Figure 2-7 •
AC Loading
Table 2-43 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V)
0
Input High (V)
Measuring Point* (V)
VREF (typ.) (V)
CLOAD (pF)
2.5
1.2
–
35
* Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points.
2- 32
R ev i sio n 1 0
15
SmartFusion Customizable System-on-Chip (cSoC)
Timing Characteristics
Table 2-44 • 2.5 V LVCMOS High Slew
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 2.3 V
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
Drive
Speed
Strength Grade
tDOUT
tDP
tDIN
tPY
tEOUT
tZL
tZH
tLZ
tHZ
tZLS
tZHS
Units
0.55
8.10
0.04
1.23
0.39
7.37
8.10
2.54
2.17
9.43
10.15
ns
–1
0.46
6.75
0.03
1.03
0.32
6.14
6.75
2.12
1.81
7.85
8.46
ns
Std.
0.55
4.85
0.04
1.23
0.39
4.76
4.85
2.90
2.83
6.82
6.91
ns
–1
0.46
4.04
0.03
1.03
0.32
3.97
4.04
2.42
2.36
5.68
5.76
ns
12 mA
Std.
0.60
3.28
0.04
1.23
0.39
3.46
3.23
3.15
3.24
5.52
5.29
ns
–1
0.50
2.73
0.03
1.03
0.32
2.88
2.69
2.62
2.70
4.60
4.41
ns
16 mA
Std.
0.60
3.09
0.04
1.23
0.39
3.27
2.88
3.20
3.35
5.33
4.94
ns
–1
0.50
2.57
0.03
1.03
0.32
2.72
2.40
2.67
2.79
4.44
4.12
ns
24 mA
Std.
0.60
2.95
0.04
1.23
0.39
3.01
2.31
3.27
3.76
5.07
4.37
ns
–1
0.50
2.46
0.03
1.03
0.32
2.51
1.93
2.73
3.13
4.22
3.64
ns
4 mA
Std.
8 mA
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
Table 2-45 • 2.5 V LVCMOS Low Slew
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 2.3 V
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
Drive
Strength
Speed
Grade
tDOUT
tDP
tDIN
tPY
tEOUT
tZL
tZH
tLZ
tHZ
tZLS
tZHS
Units
4 mA
Std.
0.55
10.50
0.04
1.23
0.39
10.69
10.50
2.54
2.07
12.75
12.56
ns
–1
0.46
8.75
0.03
1.03
0.32
8.91
8.75
2.12
1.73
10.62
10.47
ns
8 mA
Std.
0.55
7.61
0.04
1.23
0.39
7.46
7.19
2.81
2.66
9.52
9.25
ns
–1
0.46
6.34
0.03
1.03
0.32
6.22
5.99
2.34
2.22
7.93
7.71
ns
12 mA
Std.
0.60
5.92
0.04
1.23
0.39
5.79
5.45
3.04
3.06
7.85
7.51
ns
–1
0.50
4.93
0.03
1.03
0.32
4.83
4.54
2.53
2.55
6.54
6.26
ns
16 mA
Std.
0.60
5.53
0.04
1.23
0.39
5.40
5.09
3.09
3.16
7.46
7.14
ns
–1
0.50
4.61
0.03
1.03
0.32
4.50
4.24
2.58
2.64
6.22
5.95
ns
24 mA
Std.
0.60
5.18
0.04
1.23
0.39
5.28
5.14
3.27
3.64
7.34
7.20
ns
–1
0.50
4.32
0.03
1.03
0.32
4.40
4.29
2.72
3.03
6.11
6.00
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
Table 2-46 • 2.5 V LVCMOS High Slew
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 3.0 V
Applicable to MSS I/O Banks
Drive
Strength
8 mA
Speed
Grade
tDOUT
tDP
tDIN
tPY
tPYS
tEOUT
tZL
tZH
tLZ
tHZ
Units
Std.
0.22
2.35
0.09
1.18
1.39
0.22
2.40
2.18
2.19
2.32
ns
–1
0.18
1.96
0.07
0.99
1.16
0.18
2.00
1.82
1.82
1.93
ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
R ev i si o n 1 0
2- 33
SmartFusion DC and Switching Characteristics
1.8 V LVCMOS
Low-voltage CMOS for 1.8 V is an extension of the LVCMOS standard (JESD8-5) used for generalpurpose 1.8 V applications. It uses a 1.8 V input buffer and a push-pull output buffer.
Table 2-47 • Minimum and Maximum DC Input and Output Levels
Applicable to FPGA I/O Banks
1.8 V
LVCMOS
VIL
Drive
Min.
Strength V
VOL
VOH
IOL IOH
IOSL
IOSH
Max. Max.
V
V
Min.
V
mA mA
Max.
mA1
Max.
mA1
µA2 µA2
VIH
Max.
V
Min.
V
IIL
IIH
2 mA
–0.3
0.35 *
VCCxxxxIOBx
0.65 *
VCCxxxxIOBx
1.9
0.45 VCCxxxxIOBx
– 0.45
2
2
11
9
15 15
4 mA
–0.3
0.35 *
VCCxxxxIOBx
0.65 *
VCCxxxxIOBx
1.9
0.45 VCCxxxxIOBx
– 0.45
4
4
22
17
15 15
6 mA
–0.3
0.35 *
VCCxxxxIOBx
0.65 *
VCCxxxxIOBx
1.9
0.45 VCCxxxxIOBx
– 0.45
6
6
44
35
15 15
8 mA
–0.3
0.35 *
VCCxxxxIOBx
0.65 *
VCCxxxxIOBx
1.9
0.45 VCCxxxxIOBx
– 0.45
8
8
51
45
15 15
12 mA
–0.3
0.35 *
VCCxxxxIOBx
0.65 *
VCCxxxxIOBx
1.9
0.45 VCCxxxxIOBx 12 12
– 0.45
74
91
15 15
16 mA
–0.3
0.35 *
VCCxxxxIOBx
0.65 *
VCCxxxxIOBx
1.9
0.45 VCCxxxxIOBx 16 16
– 0.45
74
91
15 15
Notes:
1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
2. Currents are measured at 85°C junction temperature.
3. Software default selection highlighted in gray.
Table 2-48 • Minimum and Maximum DC Input and Output Levels
Applicable to MSS I/O Banks
1.8 V
LVCMOS
VIL
Drive
Min.
Strength
V
4 mA
–0.3
VOL
VOH
IOL IOH
Max. Max.
V
V
Min.
V
Max.
mA mA mA1
VIH
Max.
V
Min.
V
0.35 *
VCCxxxxIOBx
0.65 *
VCCxxxxIOBx
3.6
0.45 VCCxxxxIOBx
– 0.45
4
4
IOSL
22
IOSH
IIL
17
15
Notes:
1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
2. Currents are measured at 85°C junction temperature.
3. Software default selection highlighted in gray.
R to VCCxxxxIOBx for tLZ / tZL / tZLS
R=1K
Test Point
Test Point
35 pF
Datapath
Enable Path
R to GND for tHZ / tZH / tZHS
35 pF for tZH / tZHS / tZL / tZLS
35 pF for tHZ / tLZ
Figure 2-8 •
AC Loading
Table 2-49 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V)
0
Input High (V)
Measuring Point* (V)
VREF (typ.) (V)
CLOAD (pF)
1.8
0.9
–
35
* Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points.
2- 34
R ev i sio n 1 0
IIH
Max.
mA1 µA2 µA2
15
SmartFusion Customizable System-on-Chip (cSoC)
Timing Characteristics
Table 2-50 • 1.8 V LVCMOS High Slew
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 1.7 V
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
Drive
Speed
Strength Grade
2 mA
4 mA
6 mA
8 mA
12 mA
16 mA
tDOUT
tDP
tDIN
tPY
tEOUT
tZL
tZH
tLZ
tHZ
tZLS
tZHS
Units
Std.
0.60
11.06
0.04
1.14
0.39
8.61
11.06
2.61
1.59
10.67
13.12
ns
–1
0.50
9.22
0.03
0.95
0.32
7.17
9.22
2.18
1.33
8.89
10.93
ns
Std.
0.60
6.46
0.04
1.14
0.39
5.53
6.46
3.04
2.66
7.59
8.51
ns
–1
0.50
5.38
0.03
0.95
0.32
4.61
5.38
2.54
2.22
6.33
7.10
ns
Std.
0.60
4.16
0.04
1.14
0.39
3.99
4.16
3.34
3.18
6.05
6.22
ns
–1
0.50
3.47
0.03
0.95
0.32
3.32
3.47
2.78
2.65
5.04
5.18
ns
Std.
0.60
3.69
0.04
1.14
0.39
3.76
3.67
3.40
3.31
5.81
5.73
ns
–1
0.50
3.07
0.03
0.95
0.32
3.13
3.06
2.84
2.76
4.85
4.78
ns
Std.
0.60
3.38
0.04
1.14
0.39
3.44
2.86
3.50
3.82
5.50
4.91
ns
–1
0.50
2.81
0.03
0.95
0.32
2.87
2.38
2.92
3.18
4.58
4.10
ns
Std.
0.60
3.38
0.04
1.14
0.39
3.44
2.86
3.50
3.82
5.50
4.91
ns
–1
0.50
2.81
0.03
0.95
0.32
2.87
2.38
2.92
3.18
4.58
4.10
ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
Table 2-51 • 1.8 V LVCMOS Low Slew
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 1.7 V
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
Drive
Strength
2 mA
4 mA
6 mA
8 mA
12 mA
16 mA
Speed
Grade
tDOUT
tDP
tDIN
tPY
tEOUT
tZL
tZH
tLZ
tHZ
tZLS
tZHS
Units
Std.
0.60
14.24
0.04
1.14
0.39
13.47
14.24
2.62
1.54
15.53
16.30
ns
–1
0.50
11.87
0.03
0.95
0.32
11.23
11.87
2.18
1.28
12.94
13.59
ns
Std.
0.60
9.74
0.04
1.14
0.39
9.92
9.62
3.05
2.57
11.98
11.68
ns
–1
0.50
8.11
0.03
0.95
0.32
8.26
8.02
2.54
2.14
9.98
9.74
ns
Std.
0.60
7.67
0.04
1.14
0.39
7.81
7.24
3.34
3.08
9.87
9.30
ns
–1
0.50
6.39
0.03
0.95
0.32
6.51
6.03
2.79
2.56
8.23
7.75
ns
Std.
0.60
7.15
0.04
1.14
0.39
7.29
6.75
3.41
3.21
9.34
8.80
ns
–1
0.50
5.96
0.03
0.95
0.32
6.07
5.62
2.84
2.68
7.79
7.34
ns
Std.
0.60
6.76
0.04
1.14
0.39
6.89
6.75
3.50
3.70
8.95
8.81
ns
–1
0.50
5.64
0.03
0.95
0.32
5.74
5.62
2.92
3.08
7.46
7.34
ns
Std.
0.60
6.76
0.04
1.14
0.39
6.89
6.75
3.50
3.70
8.95
8.81
ns
–1
0.50
5.64
0.03
0.95
0.32
5.74
5.62
2.92
3.08
7.46
7.34
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
R ev i si o n 1 0
2- 35
SmartFusion DC and Switching Characteristics
Table 2-52 • 1.8 V LVCMOS High Slew
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 1.7 V
Applicable to MSS I/O Banks
Drive
Strength
4 mA
Speed
Grade
tDOUT
tDP
tDIN
tPY
tPYS
tEOUT
tZL
tZH
tLZ
tHZ
Units
Std.
0.22
2.77
0.09
1.09
1.64
0.22
2.82
2.72
2.21
2.25
ns
–1
0.18
2.31
0.07
0.91
1.37
0.18
2.35
2.27
1.84
1.87
ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
2- 36
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
1.5 V LVCMOS (JESD8-11)
Low-Voltage CMOS for 1.5 V is an extension of the LVCMOS standard (JESD8-5) used for generalpurpose 1.5 V applications. It uses a 1.5 V input buffer and a push-pull output buffer.
Table 2-53 • Minimum and Maximum DC Input and Output Levels
Applicable to FPGA I/O Banks
1.5 V
LVCMOS
VIL
Drive
Min.
Strength V
VIH
Max.
V
Min.
V
Max.
V
VOL
VOH
Max.
V
Min.
V
IOL IOH IOSL
Max.
mA mA mA1
IOSH IIL IIH
Max.
mA1 µA2 µA2
2 mA
–0.3
0.35 *
0.65 *
1.575
0.25*
0.75 *
VCCxxxxIOBx VCCxxxxIOBx
VCCxxxxIOBx VCCxxxxIOBx
2
2
16
13
15 15
4 mA
–
0.3
0.35*
0.65 *
1.575
0.25*
0.75 *
VCCxxxxIOBx VCCxxxxIOBx
VCCxxxxIOBx VCCxxxxIOBx
4
4
33
25
15 15
6 mA
–
0.35 *
0.65 *
1.575
0.25*
0.75 *
0.3 VCCxxxxIOBx VCCxxxxIOBx
VCCxxxxIOBx VCCxxxxIOBx
6
6
39
32
15 15
8 mA
–
0.35 *
0.65 *
1.575
0.3 VCCxxxxIOBx VCCxxxxIOBx
8
8
55
66
15 15
12 mA
–
0.35 *
0.65 *
1.575
0.25 *
0.75 *
12 12
0.3 VCCxxxxIOBx VCCxxxxIOBx
VCCxxxxIOBx VCCxxxxIOBx
55
66
15 15
0.25* VCC
0.75 *
VCCxxxxIOBx
Notes:
1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
2. Currents are measured at 85°C junction temperature.
3. Software default selection highlighted in gray.
Table 2-54 • Minimum and Maximum DC Input and Output Levels
Applicable to MSS I/O Banks
1.5 V
LVCMOS
VIL
Drive
Min.
Strength V
2 mA
–0.3
VOL
VOH
IOL IOH IOSL IOSH IIL IIH
Max.
V
Min.
V
Max. Max.
µA
mA mA mA1 mA1 µA2 2
VIH
Max.
V
Min.
V
Max.
V
0.35 *
0.65 *
1.575
0.25 *
0.75 *
VCCxxxxIOBx VCCxxxxIOBx
VCCxxxxIOBx VCCxxxxIOBx
2
2
16
13
15 15
Notes:
1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
2. Currents are measured at 85°C junction temperature.
3. Software default selection highlighted in gray.
R to VCCxxxxIOBx for tLZ / tZL / tZLS
R=1K
Test Point
Test Point
35 pF
Datapath
Enable Path
R to GND for tHZ / tZH / tZHS
35 pF for tZH / tZHS / tZL / tZLS
35 pF for tHZ / tLZ
Figure 2-9 •
AC Loading
Table 2-55 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V)
0
Input High (V)
Measuring Point* (V)
VREF (typ.) (V)
CLOAD (pF)
1.5
0.75
–
35
* Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points.
R ev i si o n 1 0
2- 37
SmartFusion DC and Switching Characteristics
Timing Characteristics
Table 2-56 • 1.5 V LVCMOS High Slew
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 1.425 V
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
Drive
Strength
Speed
Grade
tDOUT
tDP
tDIN
tPY
tEOUT
tZL
tZH
tLZ
tHZ
tZLS
tZHS
Units
2m
Std.
0.60
7.79
0.04
1.34
0.39
6.43
7.79
3.19
2.59
8.49
9.85
ns
–1
0.50
6.49
0.03
1.12
0.32
5.36
6.49
2.66
2.16
7.08
8.21
ns
4 mA
Std.
0.60
4.95
0.04
1.34
0.39
4.61
4.96
3.53
3.19
6.67
7.02
ns
–1
0.50
4.13
0.03
1.12
0.32
3.85
4.13
2.94
2.66
5.56
5.85
ns
6 mA
Std.
0.60
4.36
0.04
1.34
0.39
4.34
4.36
3.60
3.34
6.40
6.42
ns
–1
0.50
3.64
0.03
1.12
0.32
3.62
3.64
3.00
2.78
5.33
5.35
ns
8 mA
Std.
0.60
3.89
0.04
1.34
0.39
3.96
3.34
3.72
3.92
6.02
5.40
ns
–1
0.50
3.24
0.03
1.12
0.32
3.30
2.79
3.10
3.27
5.02
4.50
ns
12 mA
Std.
0.60
3.89
0.04
1.34
0.39
3.96
3.34
3.72
3.92
6.02
5.40
ns
–1
0.50
3.24
0.03
1.12
0.32
3.30
2.79
3.10
3.27
5.02
4.50
ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
Table 2-57 • 1.5 V LVCMOS Low Slew
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 1.4 V
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
Drive
Strength
Speed
Grade
tDOUT
tDP
tDIN
tPY
tEOUT
2 mA
Std.
0.60
11.96
0.04
1.34
0.39
12.18 11.70
–1
0.50
9.96
0.03
1.12
0.32
10.15
9.75
2.67
2.06
11.86
11.46
ns
4 mA
Std.
0.60
9.51
0.04
1.34
0.39
9.68
8.76
3.54
3.07
11.74 10.82
ns
–1
0.50
7.92
0.03
1.12
0.32
8.07
7.30
2.95
2.56
9.79
9.02
ns
6 mA
Std.
0.60
8.86
0.04
1.34
0.39
9.03
8.17
3.61
3.22
11.08 10.23
ns
–1
0.50
7.39
0.03
1.12
0.32
7.52
6.81
3.01
2.68
9.24
8.52
ns
8 mA
Std.
0.60
8.44
0.04
1.34
0.39
8.60
8.18
3.73
3.78
10.66 10.24
ns
–1
0.50
7.04
0.03
1.12
0.32
7.17
6.82
3.11
3.15
8.88
8.53
ns
12 mA
Std.
0.60
8.44
0.04
1.34
0.39
8.60
8.18
3.73
3.78
10.66 10.24
ns
–1
0.50
7.04
0.03
1.12
0.32
7.17
6.82
3.11
3.15
8.88
ns
tZL
tZH
tLZ
tHZ
3.20
2.47
tZLS
tZHS
14.24 13.76
8.53
Units
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
Table 2-58 • 1.5 V LVCMOS High Slew
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 3.0 V
Applicable to MSS I/O Banks
Drive
Strength
2 mA
Speed
Grade
tDOUT
tDP
tDIN
tPY
tPYS
tEOUT
tZL
tZH
tLZ
tHZ
Units
Std.
0.22
3.24
0.09
1.28
1.86
0.22
3.30
3.20
2.24
2.21
ns
–1
0.18
2.70
0.07
1.07
1.55
0.18
2.75
2.67
1.87
1.85
ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
2- 38
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
3.3 V PCI, 3.3 V PCI-X
Peripheral Component Interface for 3.3 V standard specifies support for 33 MHz and 66 MHz PCI Bus
applications.
Table 2-59 • Minimum and Maximum DC Input and Output Levels
3.3 V PCI/PCI-X
VIL
Min.
V
Drive Strength
VIH
Max.
V
Min.
V
Max.
V
Per PCI specification
VOL
VOH
IOL IOH
IOSL
IOSH
Max.
V
Min.
V
mA mA
Max.
mA1
Max.
mA1
IIL
IIH
µA2 µA2
Per PCI curves
15
15
Notes:
1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
2. Currents are measured at 85°C junction temperature.
AC loadings are defined per the PCI/PCI-X specifications for the datapath; SoC Products Group loadings
for enable path characterization are described in Figure 2-10.
R to VCCXXXXIOBX for tDP (F)
R = 25
R to GND for tDP (R)
Test Point
R=1k
Test Point
R to GND for tHZ / tZH / tZHS
10 pF for tZH / tZHS / tZL / tZLS
Enable Path
Datapath
R to VCCXXXXIOBX for tLZ / tZL/ tZLS
10 pF for tHZ / tLZ
Figure 2-10 • AC Loading
AC loadings are defined per PCI/PCI-X specifications for the datapath; SoC Products Group loading for
tristate is described in Table 2-60.
Table 2-60 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V)
Input High (V)
Measuring Point* (V)
VREF (typ.) (V)
CLOAD (pF)
3.3
0.285 * VCCxxxxIOBx for tDP(R)
0.615 * VCCxxxxIOBx for tDP(F)
–
10
0
* Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points.
Timing Characteristics
Table 2-61 • 3.3 V PCI
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 3.0 V
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
tDOUT
tDP
tDIN
tPY
tEOUT
tZL
tZH
tLZ
tHZ
tZLS
tZHS
Units
Std.
0.60
2.54
0.04
0.82
0.39
2.58
1.88
3.06
3.39
4.64
3.94
ns
–1
0.50
2.11
0.03
0.68
0.32
2.15
1.57
2.55
2.82
3.87
3.28
ns
Speed Grade
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
Table 2-62 • 3.3 V PCI-X
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCxxxxIOBx = 3.0 V
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
tDOUT
tDP
Std.
0.60
2.54
–1
0.50
2.11
Speed Grade
tDIN
tPY
tEOUT
tZL
0.04
0.77
0.39
2.58
0.03
0.64
0.32
2.15
tZH
tLZ
tHZ
tZLS
tZHS
Units
1.88
3.06
3.39
4.64
3.94
ns
1.57
2.55
2.82
3.87
3.28
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
R ev i si o n 1 0
2- 39
SmartFusion DC and Switching Characteristics
Differential I/O Characteristics
Physical Implementation
Configuration of the I/O modules as a differential pair is handled by SoC Products Group Designer
software when the user instantiates a differential I/O macro in the design.
Differential I/Os can also be used in conjunction with the embedded Input Register (InReg), Output
Register (OutReg), Enable Register (EnReg), and Double Data Rate (DDR). However, there is no
support for bidirectional I/Os or tristates with the LVPECL standards.
LVDS
Low-Voltage Differential Signaling (ANSI/TIA/EIA-644) is a high-speed, differential I/O standard. It
requires that one data bit be carried through two signal lines, so two pins are needed. It also requires
external resistor termination.
The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-11. The
building blocks of the LVDS transmitter-receiver are one transmitter macro, one receiver macro, three
board resistors at the transmitter end, and one resistor at the receiver end. The values for the three driver
resistors are different from those used in the LVPECL implementation because the output standard
specifications are different.
Along with LVDS I/O, SmartFusion cSoCs also support bus LVDS structure and multipoint LVDS
(M-LVDS) configuration (up to 40 nodes).
Bourns Part Number: CAT16-LV4F12
OUTBUF_LVDS
FPGA
P
165 
140 
N
165 
Z0 = 50 
Figure 2-11 • LVDS Circuit Diagram and Board-Level Implementation
2- 40
P
Z0 = 50 
R ev i sio n 1 0
FPGA
+
–
100 
N
INBUF_LVDS
SmartFusion Customizable System-on-Chip (cSoC)
Table 2-63 • LVDS Minimum and Maximum DC Input and Output Levels
DC Parameter
Description
Min.
Typ.
Max.
Units
2.375
2.5
2.625
V
VCCFPGAIOBx
Supply voltage
VOL
Output low voltage
0.9
1.075
1.25
V
VOH
IOL
Output high voltage
1.25
1.425
1.6
V
1
Output lower current
0.65
0.91
1.16
mA
1
Output high current
0.65
0.91
1.16
mA
2.925
V
IOH
VI
Input voltage
IIH2
0
Input high leakage current
15
µA
IIL2
Input low leakage current
15
µA
VODIFF
Differential output voltage
VOCM
250
350
450
mV
Output common mode voltage
1.125
1.25
1.375
V
VICM
Input common mode voltage
0.05
1.25
2.35
V
VIDIFF
Input differential voltage
100
350
mV
Notes:
1. IOL / IOH defined by VODIFF /(resistor network).
2. Currents are measured at 85°C junction temperature.
Table 2-64 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V)
1.075
Input High (V)
Measuring Point* (V)
VREF (typ.) (V)
1.325
Cross point
–
* Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points.
Timing Characteristics
Table 2-65 • LVDS
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCFPGAIOBx = 2.3 V
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
Speed Grade
tDOUT
tDP
tDIN
tPY
Units
Std.
0.60
1.83
0.04
1.87
ns
–1
0.50
1.53
0.03
1.55
ns
Notes:
1. For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for
derating values.
2. The above mentioned timing parameters correspond to 24mA drive strength.
R ev i si o n 1 0
2- 41
SmartFusion DC and Switching Characteristics
B-LVDS/M-LVDS
Bus LVDS (B-LVDS) and Multipoint LVDS (M-LVDS) specifications extend the existing LVDS standard to
high-performance multipoint bus applications. Multidrop and multipoint bus configurations may contain
any combination of drivers, receivers, and transceivers. SoC Products Group LVDS drivers provide the
higher drive current required by B-LVDS and M-LVDS to accommodate the loading. The drivers require
series terminations for better signal quality and to control voltage swing. Termination is also required at
both ends of the bus since the driver can be located anywhere on the bus. These configurations can be
implemented using the TRIBUF_LVDS and BIBUF_LVDS macros along with appropriate terminations.
Multipoint designs using SoC Products Group LVDS macros can achieve up to 200 MHz with a maximum
of 20 loads. A sample application is given in Figure 2-12. The input and output buffer delays are available
in the LVDS section in Table 2-65.
Example: For a bus consisting of 20 equidistant loads, the following terminations provide the required
differential voltage, in worst-case commercial operating conditions, at the farthest receiver: RS = 60 
and RT = 70 , given Z0 = 50  (2") and Zstub = 50  (~1.5").
Receiver
Transceiver
EN
R
RS
Zstub
+
RS
Zstub
Z0
RT Z
0
D
EN
T
-
+
Driver
RS
Zstub
-
RS
Zstub
Zstub
EN
Transceiver
EN
R
-
+
RS
Receiver
+
RS
Zstub
EN
T
-
RS
Zstub
+
RS
Zstub
RS
BIBUF_LVDS
-
RS
...
Z0
Z0
Z0
Z0
Z0
Z0
Z0
Z0
Z0
Z0
RT
Figure 2-12 • B-LVDS/M-LVDS Multipoint Application Using LVDS I/O Buffers
LVPECL
Low-Voltage Positive Emitter-Coupled Logic (LVPECL) is another differential I/O standard. It requires
that one data bit be carried through two signal lines. Like LVDS, two pins are needed. It also requires
external resistor termination.
The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-13. The
building blocks of the LVPECL transmitter-receiver are one transmitter macro, one receiver macro, three
board resistors at the transmitter end, and one resistor at the receiver end. The values for the three driver
resistors are different from those used in the LVDS implementation because the output standard
specifications are different.
Bourns Part Number: CAT16-PC4F12
OUTBUF_LVPECL
FPGA
P
100 
187 W
N
100 
P
Z0 = 50 
Figure 2-13 • LVPECL Circuit Diagram and Board-Level Implementation
2- 42
R ev i sio n 1 0
+
–
100 
Z0 = 50 
FPGA
N
INBUF_LVPECL
SmartFusion Customizable System-on-Chip (cSoC)
Table 2-66 • Minimum and Maximum DC Input and Output Levels
DC Parameter
Description
Min.
VCCFPGAIOBx Supply Voltage
Max.
Min.
3.0
Max.
Min.
3.3
Max.
Units
3.6
V
VOL
Output Low Voltage
0.96
1.27
1.06
1.43
1.30
1.57
V
VOH
Output High Voltage
1.8
2.11
1.92
2.28
2.13
2.41
V
VIL, VIH
Input Low, Input High Voltages
0
3.6
0
3.6
0
3.6
V
VODIFF
Differential Output Voltage
0.625
0.97
0.625
0.97
0.625
0.97
V
VOCM
Output Common-Mode Voltage
1.762
1.98
1.762
1.98
1.762
1.98
V
VICM
Input Common-Mode Voltage
1.01
2.57
1.01
2.57
1.01
2.57
V
VIDIFF
Input Differential Voltage
300
300
300
mV
Table 2-67 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V)
1.64
Input High (V)
Measuring Point* (V)
VREF (typ.) (V)
1.94
Cross point
–
* Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points.
Timing Characteristics
Table 2-68 • LVPECL
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCFPGAIOBx = 3.0 V
Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins
Speed Grade
tDOUT
tDP
tDIN
tPY
Units
Std.
0.60
1.76
0.04
1.76
ns
–1
0.50
1.46
0.03
1.46
ns
Notes:
1. For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for
derating values.
2. The above mentioned timing parameters correspond to 24mA drive strength.
R ev i si o n 1 0
2- 43
SmartFusion DC and Switching Characteristics
I/O Register Specifications
Fully Registered I/O Buffers with Synchronous Enable and
Asynchronous Preset
INBUF
Preset
L
DOUT
Data_out
C
PRE
D
Q
DFN1E1P1
E
Y
F
Core
Array
G
PRE
D
Q
DFN1E1P1
TRIBUF
CLKBUF
CLK
INBUF
Enable
INBUF
Data
E
E
EOUT
B
H
I
A
J
K
INBUF
INBUF
D_Enable
CLK
CLKBUF
Enable
Data Input I/O Register with:
Active High Enable
Active High Preset
Positive-Edge Triggered
PRE
D
Q
DFN1E1P1
E
Data Output Register and
Enable Output Register with:
Active High Enable
Active High Preset
Postive-Edge Triggered
Figure 2-14 • Timing Model of Registered I/O Buffers with Synchronous Enable and Asynchronous Preset
2- 44
R ev i sio n 1 0
Pad Out
D
SmartFusion Customizable System-on-Chip (cSoC)
Table 2-69 • Parameter Definition and Measuring Nodes
Parameter Name
Parameter Definition
Measuring Nodes
(from, to)*
tOCLKQ
Clock-to-Q of the Output Data Register
H, DOUT
tOSUD
Data Setup Time for the Output Data Register
F, H
tOHD
Data Hold Time for the Output Data Register
F, H
tOSUE
Enable Setup Time for the Output Data Register
G, H
tOHE
Enable Hold Time for the Output Data Register
G, H
tOPRE2Q
Asynchronous Preset-to-Q of the Output Data Register
tOREMPRE
Asynchronous Preset Removal Time for the Output Data Register
L, H
tORECPRE
Asynchronous Preset Recovery Time for the Output Data Register
L, H
tOECLKQ
Clock-to-Q of the Output Enable Register
tOESUD
Data Setup Time for the Output Enable Register
J, H
tOEHD
Data Hold Time for the Output Enable Register
J, H
tOESUE
Enable Setup Time for the Output Enable Register
K, H
tOEHE
Enable Hold Time for the Output Enable Register
K, H
tOEPRE2Q
Asynchronous Preset-to-Q of the Output Enable Register
tOEREMPRE
Asynchronous Preset Removal Time for the Output Enable Register
I, H
tOERECPRE
Asynchronous Preset Recovery Time for the Output Enable Register
I, H
tICLKQ
Clock-to-Q of the Input Data Register
A, E
tISUD
Data Setup Time for the Input Data Register
C, A
tIHD
Data Hold Time for the Input Data Register
C, A
tISUE
Enable Setup Time for the Input Data Register
B, A
tIHE
Enable Hold Time for the Input Data Register
B, A
tIPRE2Q
Asynchronous Preset-to-Q of the Input Data Register
D, E
tIREMPRE
Asynchronous Preset Removal Time for the Input Data Register
D, A
tIRECPRE
Asynchronous Preset Recovery Time for the Input Data Register
D, A
L, DOUT
H, EOUT
I, EOUT
* See Figure 2-14 on page 2-44 for more information.
R ev i si o n 1 0
2- 45
SmartFusion DC and Switching Characteristics
Fully Registered I/O Buffers with Synchronous Enable and
Asynchronous Clear
CC
D
Q
DFN1E1C1
EE
Data_out FF
D
Q
DFN1E1C1
TRIBUF
INBUF
Data
Core
Array
Pad Out
DOUT
Y
GG
INBUF
Enable
EOUT
E
E
BB
CLR
CLR
LL
INBUF
CLR
CLKBUF
CLK
HH
AA
JJ
DD
KK
Data Input I/O Register with
Active High Enable
Active High Clear
Positive-Edge Triggered
D
Q
DFN1E1C1
E
INBUF
CLKBUF
CLK
Enable
INBUF
D_Enable
CLR
Data Output Register and
Enable Output Register with
Active High Enable
Active High Clear
Positive-Edge Triggered
Figure 2-15 • Timing Model of the Registered I/O Buffers with Synchronous Enable and Asynchronous Clear
2- 46
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Table 2-70 • Parameter Definition and Measuring Nodes
Parameter Name
Parameter Definition
Measuring Nodes
(from, to)*
tOCLKQ
Clock-to-Q of the Output Data Register
HH, DOUT
tOSUD
Data Setup Time for the Output Data Register
FF, HH
tOHD
Data Hold Time for the Output Data Register
FF, HH
tOSUE
Enable Setup Time for the Output Data Register
GG, HH
tOHE
Enable Hold Time for the Output Data Register
GG, HH
tOCLR2Q
Asynchronous Clear-to-Q of the Output Data Register
tOREMCLR
Asynchronous Clear Removal Time for the Output Data Register
LL, HH
tORECCLR
Asynchronous Clear Recovery Time for the Output Data Register
LL, HH
tOECLKQ
Clock-to-Q of the Output Enable Register
tOESUD
Data Setup Time for the Output Enable Register
JJ, HH
tOEHD
Data Hold Time for the Output Enable Register
JJ, HH
tOESUE
Enable Setup Time for the Output Enable Register
KK, HH
tOEHE
Enable Hold Time for the Output Enable Register
KK, HH
tOECLR2Q
Asynchronous Clear-to-Q of the Output Enable Register
II, EOUT
tOEREMCLR
Asynchronous Clear Removal Time for the Output Enable Register
II, HH
tOERECCLR
Asynchronous Clear Recovery Time for the Output Enable Register
II, HH
tICLKQ
Clock-to-Q of the Input Data Register
AA, EE
tISUD
Data Setup Time for the Input Data Register
CC, AA
tIHD
Data Hold Time for the Input Data Register
CC, AA
tISUE
Enable Setup Time for the Input Data Register
BB, AA
tIHE
Enable Hold Time for the Input Data Register
BB, AA
tICLR2Q
Asynchronous Clear-to-Q of the Input Data Register
DD, EE
tIREMCLR
Asynchronous Clear Removal Time for the Input Data Register
DD, AA
tIRECCLR
Asynchronous Clear Recovery Time for the Input Data Register
DD, AA
LL, DOUT
HH, EOUT
* See Figure 2-15 on page 2-46 for more information.
R ev i si o n 1 0
2- 47
SmartFusion DC and Switching Characteristics
Input Register
tICKMPWH tICKMPWL
CLK
50%
50%
Enable
50%
1
50%
50%
50%
tIHD
tISUD
Data
50%
50%
50%
0
tIWPRE
50%
tIRECPRE
tIREMPRE
50%
50%
tIHE
Preset
tISUE
50%
tIWCLR
50%
Clear
tIRECCLR
tIREMCLR
50%
50%
tIPRE2Q
50%
Out_1
50%
tICLR2Q
50%
tICLKQ
Figure 2-16 • Input Register Timing Diagram
Timing Characteristics
Table 2-71 • Input Data Register Propagation Delays
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V
Parameter
Description
–1
Std.
Units
tICLKQ
Clock-to-Q of the Input Data Register
0.24
0.29
ns
tISUD
Data Setup Time for the Input Data Register
0.27
0.32
ns
tIHD
Data Hold Time for the Input Data Register
0.00
0.00
ns
tISUE
Enable Setup Time for the Input Data Register
0.38
0.45
ns
tIHE
Enable Hold Time for the Input Data Register
0.00
0.00
ns
tICLR2Q
Asynchronous Clear-to-Q of the Input Data Register
0.46
0.55
ns
tIPRE2Q
Asynchronous Preset-to-Q of the Input Data Register
0.46
0.55
ns
tIREMCLR
Asynchronous Clear Removal Time for the Input Data Register
0.00
0.00
ns
tIRECCLR
Asynchronous Clear Recovery Time for the Input Data Register
0.23
0.27
ns
tIREMPRE
Asynchronous Preset Removal Time for the Input Data Register
0.00
0.00
ns
tIRECPRE
Asynchronous Preset Recovery Time for the Input Data Register
0.23
0.27
ns
tIWCLR
Asynchronous Clear Minimum Pulse Width for the Input Data Register
0.22
0.22
ns
tIWPRE
Asynchronous Preset Minimum Pulse Width for the Input Data Register
0.22
0.22
ns
tICKMPWH
Clock Minimum Pulse Width High for the Input Data Register
0.36
0.36
ns
tICKMPWL
Clock Minimum Pulse Width Low for the Input Data Register
0.32
0.32
ns
Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9
for derating values.
2- 48
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Output Register
tOCKMPWH tOCKMPWL
CLK
50%
50%
50%
50%
50%
50%
50%
tOSUD tOHD
1
Data_out
Enable
50%
50%
0
50%
tOWPRE
tOHE
Preset
tOSUE
tOREMPRE
tORECPRE
50%
50%
50%
tOWCLR
50%
Clear
tOREMCLR
tORECCLR
50%
50%
tOPRE2Q
50%
DOUT
50%
tOCLR2Q
50%
tOCLKQ
Figure 2-17 • Output Register Timing Diagram
Timing Characteristics
Table 2-72 • Output Data Register Propagation Delays
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V
Parameter
Description
–1
Std.
Units
tOCLKQ
Clock-to-Q of the Output Data Register
0.60
0.72
ns
tOSUD
Data Setup Time for the Output Data Register
0.32
0.38
ns
tOHD
Data Hold Time for the Output Data Register
0.00
0.00
ns
tOSUE
Enable Setup Time for the Output Data Register
0.44
0.53
ns
tOHE
Enable Hold Time for the Output Data Register
0.00
0.00
ns
tOCLR2Q
Asynchronous Clear-to-Q of the Output Data Register
0.82
0.98
ns
tOPRE2Q
Asynchronous Preset-to-Q of the Output Data Register
0.82
0.98
ns
tOREMCLR
Asynchronous Clear Removal Time for the Output Data Register
0.00
0.00
ns
tORECCLR
Asynchronous Clear Recovery Time for the Output Data Register
0.23
0.27
ns
tOREMPRE
Asynchronous Preset Removal Time for the Output Data Register
0.00
0.00
ns
tORECPRE
Asynchronous Preset Recovery Time for the Output Data Register
0.23
0.27
ns
tOWCLR
Asynchronous Clear Minimum Pulse Width for the Output Data Register
0.22
0.22
ns
tOWPRE
Asynchronous Preset Minimum Pulse Width for the Output Data Register
0.22
0.22
ns
tOCKMPWH
Clock Minimum Pulse Width High for the Output Data Register
0.36
0.36
ns
tOCKMPWL
Clock Minimum Pulse Width Low for the Output Data Register
0.32
0.32
ns
Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on
page 2-9 for derating values.
R ev i si o n 1 0
2- 49
SmartFusion DC and Switching Characteristics
Output Enable Register
tOECKMPWH tOECKMPWL
CLK
50%
50%
50%
50%
50%
50%
50%
tOESUD tOEHD
1
D_Enable
Enable
Preset
50%
0 50%
50%
tOEWPRE
50%
tOESUEtOEHE
tOEREMPRE
tOERECPRE
50%
50%
tOEWCLR
50%
Clear
tOEPRE2Q
EOUT
50%
tOEREMCLR
tOERECCLR
50%
50%
tOECLR2Q
50%
50%
tOECLKQ
Figure 2-18 • Output Enable Register Timing Diagram
Timing Characteristics
Table 2-73 • Output Enable Register Propagation Delays
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V
Parameter
Description
–1
Std.
Units
tOECLKQ
Clock-to-Q of the Output Enable Register
0.45
0.54
ns
tOESUD
Data Setup Time for the Output Enable Register
0.32
0.38
ns
tOEHD
Data Hold Time for the Output Enable Register
0.00
0.00
ns
tOESUE
Enable Setup Time for the Output Enable Register
0.44
0.53
ns
tOEHE
Enable Hold Time for the Output Enable Register
0.00
0.00
ns
tOECLR2Q
Asynchronous Clear-to-Q of the Output Enable Register
0.68
0.81
ns
tOEPRE2Q
Asynchronous Preset-to-Q of the Output Enable Register
0.68
0.81
ns
tOEREMCLR
Asynchronous Clear Removal Time for the Output Enable Register
0.00
0.00
ns
tOERECCLR
Asynchronous Clear Recovery Time for the Output Enable Register
0.23
0.27
ns
tOEREMPRE
Asynchronous Preset Removal Time for the Output Enable Register
0.00
0.00
ns
tOERECPRE
Asynchronous Preset Recovery Time for the Output Enable Register
0.23
0.27
ns
tOEWCLR
Asynchronous Clear Minimum Pulse Width for the Output Enable Register
0.22
0.22
ns
tOEWPRE
Asynchronous Preset Minimum Pulse Width for the Output Enable Register
0.22
0.22
ns
tOECKMPWH
Clock Minimum Pulse Width High for the Output Enable Register
0.36
0.36
ns
tOECKMPWL
Clock Minimum Pulse Width Low for the Output Enable Register
0.32
0.32
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
2- 50
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
DDR Module Specifications
Input DDR Module
Input DDR
INBUF
Data
A
D
Out_QF
(to core)
E
Out_QR
(to core)
FF1
B
CLK
CLKBUF
FF2
C
CLR
INBUF
DDR_IN
Figure 2-19 • Input DDR Timing Model
Table 2-74 • Parameter Definitions
Parameter Name
Parameter Definition
Measuring Nodes (from, to)
tDDRICLKQ1
Clock-to-Out Out_QR
B, D
tDDRICLKQ2
Clock-to-Out Out_QF
B, E
tDDRISUD
Data Setup Time of DDR input
A, B
tDDRIHD
Data Hold Time of DDR input
A, B
tDDRICLR2Q1
Clear-to-Out Out_QR
C, D
tDDRICLR2Q2
Clear-to-Out Out_QF
C, E
tDDRIREMCLR
Clear Removal
C, B
tDDRIRECCLR
Clear Recovery
C, B
R ev i si o n 1 0
2- 51
SmartFusion DC and Switching Characteristics
CLK
tDDRISUD
Data
1
2
3
4
5
6
tDDRIHD
7
8
9
tDDRIRECCLR
CLR
tDDRIREMCLR
tDDRICLKQ1
tDDRICLR2Q1
Out_QF
2
6
4
tDDRICLKQ2
tDDRICLR2Q2
Out_QR
3
5
7
Figure 2-20 • Input DDR Timing Diagram
Timing Characteristics
Table 2-75 • Input DDR Propagation Delays
Worst Commercial-Case Conditions: TJ = 85°C, Worst Case VCC = 1.425 V
Parameter
Description
–1
Units
tDDRICLKQ1
Clock-to-Out Out_QR for Input DDR
0.39
ns
tDDRICLKQ2
Clock-to-Out Out_QF for Input DDR
0.28
ns
tDDRISUD
Data Setup for Input DDR
0.29
ns
tDDRIHD
Data Hold for Input DDR
0.00
ns
tDDRICLR2Q1
Asynchronous Clear-to-Out Out_QR for Input DDR
0.58
ns
tDDRICLR2Q2
Asynchronous Clear-to-Out Out_QF for Input DDR
0.47
ns
tDDRIREMCLR
Asynchronous Clear Removal time for Input DDR
0.00
ns
tDDRIRECCLR
Asynchronous Clear Recovery time for Input DDR
0.23
ns
tDDRIWCLR
Asynchronous Clear Minimum Pulse Width for Input DDR
0.22
ns
tDDRICKMPWH
Clock Minimum Pulse Width High for Input DDR
0.36
ns
tDDRICKMPWL
Clock Minimum Pulse Width Low for Input DDR
0.32
ns
FDDRIMAX
Maximum Frequency for Input DDR
350
MHz
Note: For derating values at specific junction temperature and voltage-supply levels, refer to Table 2-7 on page 2-9 for
derating values.
2- 52
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Output DDR Module
Output DDR
A
Data_F
(from core)
X
FF1
B
CLK
CLKBUF
E
X
C
X
D
Data_R
(from core)
Out
0
X
1
X
OUTBUF
FF2
B
X
CLR
INBUF
C
X
DDR_OUT
Figure 2-21 • Output DDR Timing Model
Table 2-76 • Parameter Definitions
Parameter Name
Parameter Definition
Measuring Nodes (from, to)
tDDROCLKQ
Clock-to-Out
B, E
tDDROCLR2Q
Asynchronous Clear-to-Out
C, E
tDDROREMCLR
Clear Removal
C, B
tDDRORECCLR
Clear Recovery
C, B
tDDROSUD1
Data Setup Data_F
A, B
tDDROSUD2
Data Setup Data_R
D, B
tDDROHD1
Data Hold Data_F
A, B
tDDROHD2
Data Hold Data_R
D, B
R ev i si o n 1 0
2- 53
SmartFusion DC and Switching Characteristics
CLK
tDDROSUD2 tDDROHD2
1
Data_F
2
tDDROREMCLR
Data_R 6
4
3
5
tDDROHD1
7
8
9
10
11
tDDRORECCLR
tDDROREMCLR
CLR
tDDROCLR2Q
Out
tDDROCLKQ
7
2
8
3
9
4
10
Figure 2-22 • Output DDR Timing Diagram
Timing Characteristics
Table 2-77 • Output DDR Propagation Delays
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V
Parameter
Description
–1
Units
tDDROCLKQ
Clock-to-Out of DDR for Output DDR
0.71
ns
tDDROSUD1
Data_F Data Setup for Output DDR
0.38
ns
tDDROSUD2
Data_R Data Setup for Output DDR
0.38
ns
tDDROHD1
Data_F Data Hold for Output DDR
0.00
ns
tDDROHD2
Data_R Data Hold for Output DDR
0.00
ns
tDDROCLR2Q
Asynchronous Clear-to-Out for Output DDR
0.81
ns
tDDROREMCLR
Asynchronous Clear Removal Time for Output DDR
0.00
ns
tDDRORECCLR
Asynchronous Clear Recovery Time for Output DDR
0.23
ns
tDDROWCLR1
Asynchronous Clear Minimum Pulse Width for Output DDR
0.22
ns
tDDROCKMPWH
Clock Minimum Pulse Width High for the Output DDR
0.36
ns
tDDROCKMPWL
Clock Minimum Pulse Width Low for the Output DDR
0.32
ns
FDDOMAX
Maximum Frequency for the Output DDR
350
MHz
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
2- 54
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
VersaTile Characteristics
VersaTile Specifications as a Combinatorial Module
The SmartFusion library offers all combinations of LUT-3 combinatorial functions. In this section, timing
characteristics are presented for a sample of the library. For more details, refer to the IGLOO/e, Fusion,
ProASIC3/E, and SmartFusion Macro Library Guide.
A
A
B
A
OR2
Y
AND2
A
Y
B
B
B
XOR2
A
B
C
Y
A
A
B
C
NOR2
B
A
A
Y
INV
NAND3
A
MAJ3
B
Y
NAND2
XOR3
Y
Y
0
MUX2
B
Y
Y
1
C
S
Figure 2-23 • Sample of Combinatorial Cells
R ev i si o n 1 0
2- 55
SmartFusion DC and Switching Characteristics
tPD
A
NAND2 or
Any Combinatorial
Logic
B
Y
tPD = MAX(tPD(RR), tPD(RF),
tPD(FF), tPD(FR)) where edges are
applicable for the particular
combinatorial cell
VCC
50%
50%
A, B, C
GND
VCC
50%
50%
OUT
GND
VCC
tPD
tPD
(FF)
(RR)
tPD
OUT
(FR)
50%
tPD
GND
(RF)
Figure 2-24 • Timing Model and Waveforms
2- 56
R ev i sio n 1 0
50%
SmartFusion Customizable System-on-Chip (cSoC)
Timing Characteristics
Table 2-78 • Combinatorial Cell Propagation Delays
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V
Combinatorial Cell
Equation
Parameter
–1
Std.
Units
Y = !A
tPD
0.41
0.49
ns
Y=A·B
tPD
0.48
0.57
ns
Y = !(A · B)
tPD
0.48
0.57
ns
Y=A+B
tPD
0.49
0.59
ns
NOR2
Y = !(A + B)
tPD
0.49
0.59
ns
XOR2
Y = A B
tPD
0.75
0.90
ns
MAJ3
Y = MAJ(A, B, C)
tPD
0.71
0.85
ns
XOR3
Y = A  B C
tPD
0.89
1.07
ns
MUX2
Y = A !S + B S
tPD
0.51
0.62
ns
AND3
Y=A·B·C
tPD
0.57
0.68
ns
INV
AND2
NAND2
OR2
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for
derating values.
VersaTile Specifications as a Sequential Module
The SmartFusion library offers a wide variety of sequential cells, including flip-flops and latches. Each
has a data input and optional enable, clear, or preset. In this section, timing characteristics are presented
for a representative sample from the library. For more details, refer to the IGLOO/e, Fusion, ProASIC3/E,
and SmartFusion Macro Library Guide.
Data
D
Q
Out
Data
En
DFN1
D
Out
Q
DFN1E1
CLK
CLK
PRE
Data
D
Q
Out
Data
En
DFN1C1
D
Q
Out
DFI1E1P1
CLK
CLK
CLR
Figure 2-25 • Sample of Sequential Cells
R ev i si o n 1 0
2- 57
SmartFusion DC and Switching Characteristics
tCKMPWH tCKMPWL
CLK
50%
50%
tSUD
50%
Data
EN
PRE
50%
tRECPRE
tREMPRE
50%
50%
50%
CLR
tPRE2Q
50%
tREMCLR
tRECCLR
tWCLR
Out
50%
50%
0
tWPRE
tHE
50%
50%
tHD
50%
tSUE
50%
50%
50%
50%
tCLR2Q
50%
50%
tCLKQ
Figure 2-26 • Timing Model and Waveforms
Timing Characteristics
Table 2-79 • Register Delays
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V
Parameter
Description
–1
Std.
Units
tCLKQ
Clock-to-Q of the Core Register
0.56
0.67
ns
tSUD
Data Setup Time for the Core Register
0.44
0.52
ns
tHD
Data Hold Time for the Core Register
0.00
0.00
ns
tSUE
Enable Setup Time for the Core Register
0.46
0.55
ns
tHE
Enable Hold Time for the Core Register
0.00
0.00
ns
tCLR2Q
Asynchronous Clear-to-Q of the Core Register
0.41
0.49
ns
tPRE2Q
Asynchronous Preset-to-Q of the Core Register
0.41
0.49
ns
tREMCLR
Asynchronous Clear Removal Time for the Core Register
0.00
0.00
ns
tRECCLR
Asynchronous Clear Recovery Time for the Core Register
0.23
0.27
ns
tREMPRE
Asynchronous Preset Removal Time for the Core Register
0.00
0.00
ns
tRECPRE
Asynchronous Preset Recovery Time for the Core Register
0.23
0.27
ns
tWCLR
Asynchronous Clear Minimum Pulse Width for the Core Register
0.22
0.22
ns
tWPRE
Asynchronous Preset Minimum Pulse Width for the Core Register
0.22
0.22
ns
tCKMPWH
Clock Minimum Pulse Width High for the Core Register
0.32
0.32
ns
tCKMPWL
Clock Minimum Pulse Width Low for the Core Register
0.36
0.36
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
2- 58
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Global Resource Characteristics
A2F200 Clock Tree Topology
Clock delays are device-specific. Figure 2-27 is an example of a global tree used for clock routing. The
global tree presented in Figure 2-27 is driven by a CCC located on the west side of the A2F200 device. It
is used to drive all D-flip-flops in the device.
Central
Global Rib
VersaTile
Rows
CCC
Global Spine
Figure 2-27 • Example of Global Tree Use in an A2F200 Device for Clock Routing
Global Tree Timing Characteristics
Global clock delays include the central rib delay, the spine delay, and the row delay. Delays do not
include I/O input buffer clock delays, as these are I/O standard–dependent, and the clock may be driven
and conditioned internally by the CCC module. For more details on clock conditioning capabilities, refer
to the "Clock Conditioning Circuits" section on page 2-63. Table 2-80 through Table 2-82 on page 2-61
present minimum and maximum global clock delays for the SmartFusion cSoCs. Minimum and maximum
delays are measured with minimum and maximum loading.
R ev i si o n 1 0
2- 59
SmartFusion DC and Switching Characteristics
Timing Characteristics
Table 2-80 • A2F500 Global Resource
Worst Commercial-Case Conditions: TJ = 85°C, VCC = 1.425 V
–1
1
Std.
Max.
2
Max.2
Units
1.84
2.08
ns
1.84
2.12
ns
Min.
1
Parameter
Description
Min.
tRCKL
Input Low Delay for Global Clock
1.54
1.73
tRCKH
Input High Delay for Global Clock
1.53
1.76
tRCKMPWH
Minimum Pulse Width High for Global Clock
0.85
1.00
ns
tRCKMPWL
Minimum Pulse Width Low for Global Clock
0.85
1.00
ns
tRCKSW
Maximum Skew for Global Clock
0.23
0.28
ns
Notes:
1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential
element, located in a lightly loaded row (single element is connected to the global net).
2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element,
located in a fully loaded row (all available flip-flops are connected to the global net in the row).
3. For specific junction temperature and voltage-supply levels, refer to Table 2-7 on page 2-9 for derating
values.
Table 2-81 • A2F200 Global Resource
Worst Commercial-Case Conditions: TJ = 85°C, VCC = 1.425 V
–1
Std.
Parameter
Description
Min.1
Max.2
Min.1
Max.2
Units
tRCKL
Input Low Delay for Global Clock
0.74
0.99
0.88
1.19
ns
tRCKH
Input High Delay for Global Clock
0.76
1.05
0.91
1.26
ns
tRCKMPWH
Minimum Pulse Width High for Global Clock
0.85
1.00
ns
tRCKMPWL
Minimum Pulse Width Low for Global Clock
0.85
1.00
ns
tRCKSW
Maximum Skew for Global Clock
0.29
0.35
ns
Notes:
1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential
element, located in a lightly loaded row (single element is connected to the global net).
2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element,
located in a fully loaded row (all available flip-flops are connected to the global net in the row).
3. For specific junction temperature and voltage-supply levels, refer to Table 2-7 on page 2-9 for derating
values.
2- 60
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Table 2-82 • A2F060 Global Resource
Worst Commercial-Case Conditions: TJ = 85°C, VCC = 1.425 V
–1
1
Std.
Max.
2
Max.2
Units
0.90
1.15
ns
0.86
1.17
ns
Min.
1
Parameter
Description
Min.
tRCKL
Input Low Delay for Global Clock
0.75
0.96
tRCKH
Input High Delay for Global Clock
0.72
0.98
tRCKMPWH
Minimum Pulse Width High for Global Clock
0.85
1.00
ns
tRCKMPWL
Minimum Pulse Width Low for Global Clock
0.85
1.00
ns
tRCKSW
Maximum Skew for Global Clock
0.26
0.31
ns
Notes:
1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential
element, located in a lightly loaded row (single element is connected to the global net).
2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element,
located in a fully loaded row (all available flip-flops are connected to the global net in the row).
3. For specific junction temperature and voltage-supply levels, refer to Table 2-7 on page 2-9 for derating
values.
RC Oscillator
The table below describes the electrical characteristics of the RC oscillator.
RC Oscillator Characteristics
Table 2-83 • Electrical Characteristics of the RC Oscillator
Parameter
FRC
Description
Condition
Min. Typ. Max.
Units
100
MHz
1
%
Period jitter (at 5 K cycles)
100
ps RMS
Cycle-to-cycle jitter (at 5 K cycles)
100
ps RMS
Period jitter (at 5 K cycles) with 1 KHz / 300
mV peak-to-peak noise on power supply
150
ps RMS
Cycle-to-cycle jitter (at 5 K cycles) with 1 KHz
/ 300 mV peak-to-peak noise on power
supply
150
ps RMS
Output duty cycle
50
%
Operating current 3.3 V domain
1
mA
1.5 V domain
2
mA
Operating
frequency
Accuracy
Temperature: –40°C to 100°C
Voltage: 3.3 V ± 5%
Output jitter
IDYNRC
R ev i si o n 1 0
2- 61
SmartFusion DC and Switching Characteristics
Main and Lower Power Crystal Oscillator
The tables below describes the electrical characteristics of the main and low power crystal oscillator.
Table 2-84 • Electrical Characteristics of the Main Crystal Oscillator
Parameter
Description
Operating frequency
Condition
Min.
Using external crystal
Using ceramic resonator
Using RC Network
Typ.
Max.
Units
0.032
20
MHz
0.5
8
MHz
0.032
4
MHz
Output duty cycle
IDYNXTAL
ISTBXTAL
50
%
Output jitter
With 10 MHz crystal
1
ns RMS
Operating current
RC
0.6
mA
0.032–0.2
0.6
mA
0.2–2.0
0.6
mA
2.0–20.0
0.6
mA
10
µA
0.5
Vp-p
Standby current of crystal oscillator
PSRRXTAL Power supply noise tolerance
VIHXTAL
Input logic level High
VILXTAL
Input logic level Low
Startup time
90%
of
VCC
V
10%
of
VCC
V
RC [Tested at 3.24Mhz]
300
550
µs
0.032–0.2 [Tested at 32KHz]
500
3,000
µs
8
12
µs
160
180
µs
0.2–2.0 [Tested at 2MHz]
2.0–20.0 [Tested at 20MHz]
Table 2-85 • Electrical Characteristics of the Low Power Oscillator
Parameter
Description
Condition
Min.
Typ.
Max.
Units
Operating frequency
32
KHz
Output duty cycle
50
%
Output jitter
30
ns RMS
10
µA
ISTBXTAL Standby current of crystal oscillator
2
µA
PSRRXTAL Power supply noise tolerance
0.5
Vp-p
IDYNXTAL Operating current
VIHXTAL
Input logic level High
VILXTAL
Input logic level Low
Startup time
2- 62
32 KHz
90% of VCC
V
10% of VCC
Test load used: 20 pF
2.5
Test load used: 30 pF
3.7
R ev i sio n 1 0
V
s
13
s
SmartFusion Customizable System-on-Chip (cSoC)
Clock Conditioning Circuits
CCC Electrical Specifications
Timing Characteristics
Table 2-86 • SmartFusion CCC/PLL Specification
Parameter
Minimum
Typical
Maximum
Units
Clock Conditioning Circuitry Input Frequency fIN_CCC
1.5
350
MHz
Clock Conditioning Circuitry Output Frequency fOUT_CCC
0.75
3501
MHz
Delay Increments in Programmable Delay Blocks2,3,4
160
ps
Number of Programmable Values in Each
Programmable Delay Block
32
Input Period Jitter
1.5
ns
LockControl = 0
300
µs
LockControl = 1
6.0
ms
LockControl = 0
1.6
ns
LockControl = 1
0.8
ns
Acquisition Time
Tracking
Jitter5
Output Duty Cycle
48.5
5.15
%
Delay Range in Block: Programmable Delay
12,3
0.6
5.56
ns
Delay Range in Block: Programmable Delay
22,3
0.025
5.56
ns
Delay Range in Block: Fixed
Delay2,3
CCC Output Peak-to-Peak Period Jitter FCCC_OUT
2.2
6,7
ns
Maximum Peak-to-Peak Period Jitter
SSO  2
FG/CS
PQ
SSO  4
FG/CS PQ
0.75 MHz to 50 MHz
0.5%
1.6% 0.9% 1.6%
50 MHz to 250 MHz
1.75% 3.5% 9.3% 9.3%
250 MHz to 350 MHz
2.5%
SSO  8
SSO  16
FG/CS
PQ
FG/CS
PQ
0.9%
1.6%
0.9%
1.8%
9.3% 17.9% 10.0% 17.9%
5.2% 13.0% 13.0% 13.0% 25.0% 14.0% 25.0%
Notes:
1. One of the CCC outputs (GLA0) is used as an MSS clock and is limited to 100 MHz (maximum) by software. Details
regarding CCC/PLL are in the "PLLs, Clock Conditioning Circuitry, and On-Chip Crystal Oscillators" chapter of the
SmartFusion Microcontroller Subsystem User's Guide.
2. This delay is a function of voltage and temperature. See Table 2-7 on page 2-9 for deratings.
3. TJ = 25°C, VCC = 1.5 V
4. When the CCC/PLL core is generated by Microsemi core generator software, not all delay values of the specified delay
increments are available. Refer to the Libero SoC Online Help associated with the core for more information.
5. Tracking jitter is defined as the variation in clock edge position of PLL outputs with reference to the PLL input clock edge.
Tracking jitter does not measure the variation in PLL output period, which is covered by the period jitter parameter.
6. Measurement done with LVTTL 3.3 V 12 mA I/O drive strength and High slew rate. VCC/VCCPLL = 1.425 V,
VCCI = 3.3V, 20 pF output load. All I/Os are placed outside of the PLL bank.
7. SSOs are outputs that are synchronous to a single clock domain and have their clock-to-out within ± 200 ps of each other.
8. VCO output jitter is calculated as a percentage of the VCO frequency. The jitter (in ps) can be calculated by multiplying
the VCO period by the % jitter. The VCO jitter (in ps) applies to CCC_OUT regardless of the output divider settings. For
example, if the jitter on VCO is 300 ps, the jitter on CCC_OUT is also 300 ps.
R ev i si o n 1 0
2- 63
SmartFusion DC and Switching Characteristics
Output Signal
Tperiod_max
Tperiod_min
Note: Peak-to-peak jitter measurements are defined by Tpeak-to-peak = Tperiod_max – Tperiod_min.
Figure 2-28 • Peak-to-Peak Jitter Definition
2- 64
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FPGA Fabric SRAM and FIFO Characteristics
FPGA Fabric SRAM
RAM512X18
RAM4K9
ADDRA11
ADDRA10
DOUTA8
DOUTA7
RADDR8
RADDR7
RD17
RD16
ADDRA0
DINA8
DINA7
DOUTA0
RADDR0
RD0
RW1
RW0
DINA0
WIDTHA1
WIDTHA0
PIPEA
WMODEA
BLKA
WENA
CLKA
PIPE
REN
RCLK
ADDRB11
ADDRB10
DOUTB8
DOUTB7
ADDRB0
DOUTB0
DINB8
DINB7
WADDR8
WADDR7
WADDR0
WD17
WD16
WD0
DINB0
WW1
WW0
WIDTHB1
WIDTHB0
PIPEB
WMODEB
BLKB
WENB
CLKB
WEN
WCLK
RESET
RESET
Figure 2-29 • RAM Models
R ev i si o n 1 0
2- 65
SmartFusion DC and Switching Characteristics
Timing Waveforms
tCYC
tCKH
tCKL
CLK
tAS
tAH
A1
A0
[R|W]ADDR
A2
tBKS
tBKH
BLK
tENS
tENH
WEN
tCKQ1
DOUT|RD
Dn
D0
D1
D2
tDOH1
Figure 2-30 • RAM Read for Pass-Through Output. Applicable to both RAM4K9 and RAM512x18.
tCYC
tCKH
tCKL
CLK
t
AS
tAH
A1
A0
[R|W]ADDR
A2
tBKS
tBKH
BLK
tENH
tENS
WEN
tCKQ2
DOUT|RD
Dn
D0
D1
tDOH2
Figure 2-31 • RAM Read for Pipelined Output Applicable to both RAM4K9 and RAM512x18.
2- 66
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
tCYC
tCKH
tCKL
CLK
tAS
tAH
A0
[R|W]ADDR
A1
A2
tBKS
tBKH
BLK
tENS
tENH
WEN
tDS
DI0
DIN|WD
tDH
DI1
D2
Dn
DOUT|RD
Figure 2-32 • RAM Write, Output Retained. Applicable to both RAM4K9 and RAM512x18.
tCYC
tCKH
tCKL
CLK
tAS
tAH
A0
ADDR
A1
A2
tBKS
tBKH
BLK
tENS
WEN
tDS
DI0
DIN
DOUT
(pass-through)
DOUT
(pipelined)
tDH
DI1
Dn
DI2
DI1
DI0
DI0
Dn
DI1
Figure 2-33 • RAM Write, Output as Write Data (WMODE = 1). Applicable to RAM4K9 only.
R ev i si o n 1 0
2- 67
SmartFusion DC and Switching Characteristics
tCYC
tCKH
tCKL
CLK
RESET
tRSTBQ
DOUT|RD
Dm
Dn
Figure 2-34 • RAM Reset. Applicable to both RAM4K9 and RAM512x18.
2- 68
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Timing Characteristics
Table 2-87 • RAM4K9
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V
Parameter
Description
–1
Std.
Units
tAS
Address setup time
0.25
0.30
ns
tAH
Address hold time
0.00
0.00
ns
tENS
REN, WEN setup time
0.15
0.17
ns
tENH
REN, WEN hold time
0.10
0.12
ns
tBKS
BLK setup time
0.24
0.28
ns
tBKH
BLK hold time
0.02
0.02
ns
tDS
Input data (DIN) setup time
0.19
0.22
ns
tDH
Input data (DIN) hold time
0.00
0.00
ns
tCKQ1
Clock High to new data valid on DOUT (output retained, WMODE = 0)
1.81
2.18
ns
Clock High to new data valid on DOUT (flow-through, WMODE = 1)
2.39
2.87
ns
tCKQ2
Clock High to new data valid on DOUT (pipelined)
0.91
1.09
ns
1
Address collision clk-to-clk delay for reliable write after write on same
address—applicable to rising edge
0.23
0.26
ns
tC2CRWH1
Address collision clk-to-clk delay for reliable read access after write on same
address—applicable to opening edge
0.34
0.38
ns
tC2CWRH1
Address collision clk-to-clk delay for reliable write access after read on same
address— applicable to opening edge
0.37
0.42
ns
tRSTBQ
RESET Low to data out Low on DOUT (flow-through)
0.94
1.12
ns
RESET Low to Data Out Low on DOUT (pipelined)
0.94
1.12
ns
tREMRSTB
RESET removal
0.29
0.35
ns
tRECRSTB
RESET recovery
1.52
1.83
ns
tMPWRSTB
RESET minimum pulse width
0.22
0.22
ns
tCYC
Clock cycle time
3.28
3.28
ns
FMAX
Maximum clock frequency
305
305
MHz
tC2CWWH
Notes:
1. For more information, refer to the Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-Based cSoCs and
FPGAs application note.
2. For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for
derating values.
R ev i si o n 1 0
2- 69
SmartFusion DC and Switching Characteristics
Table 2-88 • RAM512X18
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V
Parameter
Description
–1
Std.
Units
tAS
Address setup time
0.25
0.30
ns
tAH
Address hold time
0.00
0.00
ns
tENS
REN, WEN setup time
0.09
0.11
ns
tENH
REN, WEN hold time
0.06
0.07
ns
tDS
Input data (WD) setup time
0.19
0.22
ns
tDH
Input data (WD) hold time
0.00
0.00
ns
tCKQ1
Clock High to new data valid on RD (output retained, WMODE = 0)
2.19
2.63
ns
Clock High to new data valid on RD (pipelined)
0.91
1.09
ns
1
Address collision clk-to-clk delay for reliable read access after write on same
address—applicable to opening edge
0.38
0.43
ns
tC2CWRH1
Address collision clk-to-clk delay for reliable write access after read on same
address—applicable to opening edge
0.44
0.50
ns
tRSTBQ
RESET Low to data out Low on RD (flow-through)
0.94
1.12
ns
RESET Low to data out Low on RD (pipelined)
0.94
1.12
ns
tREMRSTB
RESET removal
0.29
0.35
ns
tRECRSTB
RESET recovery
1.52
1.83
ns
tMPWRSTB
RESET minimum pulse width
0.22
0.22
ns
tCYC
Clock cycle time
3.28
3.28
ns
FMAX
Maximum clock frequency
305
305
MHz
tCKQ2
tC2CRWH
Notes:
1. For more information, refer to the Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-Based cSoCs and
FPGAs application note.
2. For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for
derating values.
2- 70
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FIFO
FIFO4K18
RW2
RW1
RW0
WW2
WW1
WW0
ESTOP
FSTOP
RD17
RD16
RD0
FULL
AFULL
EMPTY
AEMPTY
AEVAL11
AEVAL10
AEVAL0
AFVAL11
AFVAL10
AFVAL0
REN
RBLK
RCLK
WD17
WD16
WD0
WEN
WBLK
WCLK
RPIPE
RESET
Figure 2-35 • FIFO Model
R ev i si o n 1 0
2- 71
SmartFusion DC and Switching Characteristics
Timing Waveforms
tCYC
RCLK
tENH
tENS
REN
tBKH
tBKS
RBLK
tCKQ1
RD
(flow-through)
Dn
D0
D1
D2
D0
D1
tCKQ2
RD
(pipelined)
Dn
Figure 2-36 • FIFO Read
tCYC
WCLK
tENS
tENH
WEN
WBLK
tBKS
tBKH
tDS
WD
DI0
tDH
DI1
Figure 2-37 • FIFO Write
2- 72
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
RCLK/
WCLK
tMPWRSTB
tRSTCK
RESET
tRSTFG
EMPTY
tRSTAF
AEMPTY
tRSTFG
FULL
tRSTAF
AFULL
WA/RA
(Address Counter)
MATCH (A0)
Figure 2-38 • FIFO Reset
tCYC
RCLK
tRCKEF
EMPTY
tCKAF
AEMPTY
WA/RA
(Address Counter) NO MATCH
NO MATCH
Dist = AEF_TH
MATCH (EMPTY)
Figure 2-39 • FIFO EMPTY Flag and AEMPTY Flag Assertion
R ev i si o n 1 0
2- 73
SmartFusion DC and Switching Characteristics
tCYC
WCLK
tWCKFF
FULL
tCKAF
AFULL
WA/RA NO MATCH
(Address Counter)
NO MATCH
Dist = AFF_TH
MATCH (FULL)
Figure 2-40 • FIFO FULL Flag and AFULL Flag Assertion
WCLK
WA/RA MATCH
(Address Counter) (EMPTY)
RCLK
NO MATCH
1st Rising
Edge
After 1st
Write
NO MATCH
NO MATCH
NO MATCH
Dist = AEF_TH + 1
2nd Rising
Edge
After 1st
Write
tRCKEF
EMPTY
tCKAF
AEMPTY
Figure 2-41 • FIFO EMPTY Flag and AEMPTY Flag Deassertion
RCLK
WA/RA MATCH (FULL)
NO MATCH
(Address Counter)
1st Rising
Edge
After 1st
WCLK
Read
NO MATCH
NO MATCH
NO MATCH
Dist = AFF_TH – 1
1st Rising
Edge
After 2nd
Read
tWCKF
FULL
tCKAF
AFULL
Figure 2-42 • FIFO FULL Flag and AFULL Flag Deassertion
2- 74
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Timing Characteristics
Table 2-89 • FIFO
Worst Commercial-Case Conditions: TJ = 85°C, VCC = 1.425 V
Parameter
Description
–1
Std.
Units
tENS
REN, WEN Setup Time
1.40
1.68
ns
tENH
REN, WEN Hold Time
0.02
0.02
ns
tBKS
BLK Setup Time
0.19
0.19
ns
tBKH
BLK Hold Time
0.00
0.00
ns
tDS
Input Data (WD) Setup Time
0.19
0.22
ns
tDH
Input Data (WD) Hold Time
0.00
0.00
ns
tCKQ1
Clock High to New Data Valid on RD (flow-through)
2.39
2.87
ns
tCKQ2
Clock High to New Data Valid on RD (pipelined)
0.91
1.09
ns
tRCKEF
RCLK High to Empty Flag Valid
1.74
2.09
ns
tWCKFF
WCLK High to Full Flag Valid
1.66
1.99
ns
tCKAF
Clock HIGH to Almost Empty/Full Flag Valid
6.29
7.54
ns
tRSTFG
RESET Low to Empty/Full Flag Valid
1.72
2.06
ns
tRSTAF
RESET Low to Almost Empty/Full Flag Valid
6.22
7.47
ns
tRSTBQ
RESET Low to Data Out Low on RD (flow-through)
0.94
1.12
ns
RESET Low to Data Out Low on RD (pipelined)
0.94
1.12
ns
tREMRSTB
RESET Removal
0.29
0.35
ns
tRECRSTB
RESET Recovery
1.52
1.83
ns
tMPWRSTB
RESET Minimum Pulse Width
0.22
0.22
ns
tCYC
Clock Cycle Time
3.28
3.28
ns
FMAX
Maximum Frequency for FIFO
305
305
MHz
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
Embedded Nonvolatile Memory Block (eNVM)
Electrical Characteristics
Table 2-90 describes the eNVM maximum performance.
Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC = 1.425 V
A2F060
Parameter
Description
A2F200
A2F500
–1
Std.
–1
Std.
–1
80
80
80
80
50
50
MHz
tFMAXCLKeNVM Maximum frequency for clock for the control logic – 6 100
cycles (6:1:1:1*)
80
100
80
100
80
MHz
tFMAXCLKeNVM Maximum frequency for clock for the control logic – 5
cycles (5:1:1:1*)
Std. Units
Note: *6:1:1:1 indicates 6 cycles for the first access and 1 each for the next three accesses. 5:1:1:1 indicates 5 cycles
for the first access and 1 each for the next three accesses.
R ev i si o n 1 0
2- 75
SmartFusion DC and Switching Characteristics
Embedded FlashROM (eFROM)
Electrical Characteristics
Table 2-91 describes the eFROM maximum performance
Table 2-91 • FlashROM Access Time, Worse Commercial Case Conditions: TJ = 85°C, VCC = 1.425 V
Parameter
Description
–1
Std.
Units
tCK2Q
Clock to out per configuration*
28.68
32.98
ns
Fmax
Maximum Clock frequency
15.00
15.00
MHz
JTAG 1532 Characteristics
JTAG timing delays do not include JTAG I/Os. To obtain complete JTAG timing, add I/O buffer delays to
the corresponding standard selected; refer to the I/O timing characteristics in the "User I/O
Characteristics" section on page 2-19 for more details.
Timing Characteristics
Table 2-92 • JTAG 1532
Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V
Parameter
Description
–1
Std.
Units
tDISU
Test Data Input Setup Time
0.67
0.77
ns
tDIHD
Test Data Input Hold Time
1.33
1.53
ns
tTMSSU
Test Mode Select Setup Time
0.67
0.77
ns
tTMDHD
Test Mode Select Hold Time
1.33
1.53
ns
tTCK2Q
Clock to Q (data out)
8.00
9.20
ns
tRSTB2Q
Reset to Q (data out)
26.67
30.67
ns
FTCKMAX
TCK Maximum Frequency
19.00
21.85
MHz
tTRSTREM
ResetB Removal Time
0.00
0.00
ns
tTRSTREC
ResetB Recovery Time
0.27
0.31
ns
tTRSTMPW
ResetB Minimum Pulse
TBD
TBD
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.
2- 76
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Programmable Analog Specifications
Current Monitor
Unless otherwise noted, current monitor performance is specified at 25°C with nominal power supply
voltages, with the output measured using the internal voltage reference with the internal ADC in 12-bit
mode and 91 Ksps, after digital compensation. All results are based on averaging over 16 samples.
Table 2-93 • Current Monitor Performance Specification
Specification
Test Conditions
Input voltage range (for driving ADC
over full range)
Min.
Typical
Max.
Units
0 – 48
0 – 50
1 – 51
mV
Analog gain
From the differential voltage across the
input pads to the ADC input
Input referred offset voltage
Input referred offset voltage
0
0.1
0.5
mV
–40ºC to +100ºC
0
0.1
0.5
mV
±0.1
±0.5
% nom.
±0.5
% nom.
Gain error
50
Slope of BFSL vs. 50 V/V
–40ºC to +100ºC
Overall Accuracy
Peak error from ideal transfer function,
25°C
±(0.1 +
0.25%)
Input referred noise
0 VDC input (no output averaging)
0.3
0.4
Common-mode rejection ratio
0 V to 12 VDC common-mode voltage
–86
–87
Analog settling time
To 0.1% of final value (with ADC load)
From CM_STB (High)
5
From ADC_START (High)
5
Input capacitance
Input biased current
V/V
±(0.4 + mV plus
1.5%)
%
reading
0.5
mVrms
dB
µs
200
µs
8
pF
Strobe = 0; IBIAS on CM[n]
0
µA
Strobe = 1; IBIAS on CM[n]
1
µA
Strobe = 0; IBIAS on TM[n]
2
µA
Strobe = 1; IBIAS on TM[n]
1
µA
42
dB
150
µA
140
µA
50
µA
CM[n] or TM[n] pad,
–40°C to +100°C over maximum input
voltage range (plus is into pad)
Power supply rejection ratio
DC (0 – 10 KHz)
41
Incremental operational current VCC33A
monitor power supply current
VCC33AP
requirements (per current monitor
instance, not including ADC or VCC15A
VAREFx)
Note: Under no condition should the TM pad ever be greater than 10 mV above the CM pad. This restriction is
applicable only if current monitor is used.
R ev i si o n 1 0
2- 77
SmartFusion DC and Switching Characteristics
Temperature Monitor
Unless otherwise noted, temperature monitor performance is specified with a 2N3904 diode-connected
bipolar transistor from National Semiconductor or Infineon Technologies, nominal power supply voltages,
with the output measured using the internal voltage reference with the internal ADC in 12-bit mode and
62.5 Ksps. After digital compensation. Unless otherwise noted, the specifications pertain to conditions
where the SmartFusion cSoC and the sensing diode are at the same temperature.
Table 2-94 • Temperature Monitor Performance Specifications
Specification
Test Conditions
Input diode temperature range
Min.
Max.
Units
–55
150
°C
233.2
378.15
K
Temperature sensitivity
Typical
2.5
mV/K
Extrapolated to 0K
0
V
Input referred temperature offset At 25°C (298.15K)
error
±1
1.5
°C
Gain error
Slope of BFSL vs. 2.5 mV/K
±1
2.5
% nom.
Overall accuracy
Peak error from ideal transfer function
±2
±3
°C
Input referred noise
At 25°C (298.15K) – no output averaging
4
°C rms
Output current
Idle mode
100
µA
Final measurement phases
10
µA
Intercept
Analog settling time
Measured to 0.1% of final value, (with
ADC load)
From TM_STB (High)
5
From ADC_START (High)
5
µs
AT parasitic capacitance
Power supply rejection ratio
DC (0–10 KHz)
1.2
Input referred temperature
sensitivity error
Variation due to device temperature
(–40°C to +100°C). External temperature
sensor held constant.
Temperature monitor (TM)
VCC33A
operational power supply current
VCC33AP
requirements (per temperature
monitor instance, not including ADC VCC15A
or VAREFx)
Note: All results are based on averaging over 64 samples.
2- 78
R ev i sio n 1 0
105
µs
500
pF
0.7
0.005
°C/V
0.008
°C/°C
200
µA
150
µA
50
µA
SmartFusion Customizable System-on-Chip (cSoC)
1
0
Temperature Error (°C)
-1
-2
-3
-4
-5
-6
-7
1.00E -06
1.00E -05
1.00E -04
1.00E -03
1.00E -02
1.00E -01
1.00E+00
Capacitance (μF)
Figure 2-43 • Temperature Error Versus External Capacitance
R ev i si o n 1 0
2- 79
SmartFusion DC and Switching Characteristics
Analog-to-Digital Converter (ADC)
Unless otherwise noted, ADC direct input performance is specified at 25°C with nominal power supply
voltages, with the output measured using the external voltage reference with the internal ADC in 12-bit
mode and 500 KHz sampling frequency, after trimming and digital compensation.
Table 2-95 • ADC Specifications
Specification
Test Conditions
Min.
Typ.
Max.
Units
Input voltage range (for driving ADC
over its full range)
2.56
Gain error
±0.4
±0.7
%
±0.4
±0.7
%
±1
±2
mV
±1
±2
–40ºC to +100ºC
Input referred offset voltage
–40ºC to +100ºC
Integral non-linearity (INL)
V
RMS deviation from BFSL
Differential non-linearity (DNL)
12-bit mode
1.71
10-bit mode
0.60
1.00
LSB
8-bit mode
0.2
0.33
LSB
12-bit mode
2.4
10-bit mode
0.80
0.94
LSB
8-bit mode
0.2
0.23
LSB
Signal to noise ratio
LSB
LSB
62
64
dB
12-bit mode 10 KHz
9.9
10
Bits
12-bit mode 100 KHz
9.9
10
Bits
10-bit mode 10 KHz
9.5
9.6
Bits
10-bit mode 100 KHz
9.5
9.6
Bits
8-bit mode 10 KHz
7.8
7.9
Bits
8-bit mode 100 KHz
7.8
7.9
Bits
Full power bandwidth
At –3 dB; –1 dBFS input
300
Analog settling time
To 0.1% of final value (with 1 Kohm source
impedance and with ADC load)
2
Input capacitance
Switched capacitance
capacitor)
12
15
pF
CM[n] input
5
7
pF
TM[n] input
5
7
pF
ADC[n] input
5
7
pF
Effective number of bits (ENOB)
–1 dBFS input
SINAD – 1.76 dB
ENOB = --------------------------------------------6.02 dB/bit
EQ 10
(ADC
sample
KHz
µs
Cs: Static capacitance (Figure 2-44 on page 2-81)
Input resistance
Rin: Series resistance (Figure 2-44)
Rsh: Shunt resistance, exclusive of
switched capacitance effects (Figure 2-44)
2
10
Note: All 3.3 V supplies are tied together and varied from 3.0 V to 3.6 V. 1.5 V supplies are held constant.
2- 80
R ev i sio n 1 0
K
M
SmartFusion Customizable System-on-Chip (cSoC)
Table 2-95 • ADC Specifications (continued)
Specification
Test Conditions
Input leakage current
–40°C to +100°C
Power supply rejection ratio
DC
Min.
44
Typ.
Max.
Units
1
µA
53
dB
ADC power supply operational current VCC33ADCx
requirements
VCC15A
2.5
mA
2
mA
Note: All 3.3 V supplies are tied together and varied from 3.0 V to 3.6 V. 1.5 V supplies are held constant.
Rin
Cst
Csw
Rsh
Figure 2-44 • ADC Input Model
Table 2-96 • VAREF Stabilization Time
Required Settling Time for 8-Bit and
10-Bit Mode (ms)
Required Settling Time for 12-Bit
Mode (ms)
0.01
1
1
0.1
3
4
0.2
6
8
0.3
10
11
0.5
17
20
0.7
18
21
1
32
37
VAREF Capacitor Value (µF)
2.2
62
73
3.3
99
117
10
275
325
22
635
751
47
1318
1557
R ev i si o n 1 0
2- 81
SmartFusion DC and Switching Characteristics
Analog Bipolar Prescaler (ABPS)
With the ABPS set to its high range setting (GDEC = 00), a hypothetical input voltage in the range –15.36
V to +15.36 V is scaled and offset by the ABPS input amplifier to match the ADC full range of 0 V to 2.56
V using a nominal gain of –0.08333 V/V. However, due to reliability considerations, the voltage applied to
the ABPS input should never be outside the range of –11.5 V to +14.4 V, restricting the usable ADC input
voltage to 2.238 V to 0.080 V and the corresponding 12-bit output codes to the range of 3581 to 128
(decimal), respectively.
Unless otherwise noted, ABPS performance is specified at 25°C with nominal power supply voltages,
with the output measured using the internal voltage reference with the internal ADC in 12-bit mode and
100 KHz sampling frequency, after trimming and digital compensation; and applies to all ranges.
Table 2-97 • ABPS Performance Specifications
Specification
Test Conditions
Min.
Typ.
Max.
Units
Input voltage range (for driving ADC GDEC[1:0] = 11
over its full range)
GDEC[1:0] = 10
±2.56
V
±5.12
V
GDEC[1:0] = 01
±10.24
V
See note 1
V
GDEC[1:0] = 00
maximum rating)
(limited
by
Analog gain (from input pad to ADC GDEC[1:0] = 11
input)
GDEC[1:0] = 10
–0.5
V/V
–0.25
V/V
GDEC[1:0] = 01
–0.125
V/V
GDEC[1:0] = 00
–0.0833
V/V
Gain error
–2.8
–0.4
0.7
%
–40ºC to +100ºC
–2.8
–0.4
0.7
%
GDEC[1:0] = 11
–0.31
–0.07
0.31
% FS*
1.47
% FS*
0.34
% FS*
1.37
% FS*
0.35
% FS*
1.35
% FS*
0.35
% FS*
1.38
% FS*
Input referred offset voltage
–40ºC to +100ºC
GDEC[1:0] = 10
–0.34
–40ºC to +100ºC
GDEC[1:0] = 01
GDEC[1:0] = 00
SINAD
–0.07
–1.06
53
RMS deviation from BFSL
–0.07
–1.05
–0.39
–40ºC to +100ºC
–0.07
–0.90
–0.61
–40ºC to +100ºC
Non-linearity
–1.00
56
dB
0.5
% FS*
Note: *FS is full-scale error, defined as the difference between the actual value that triggers the transition to full-scale
and the ideal analog full-scale transition value. Full-scale error equals offset error plus gain error. Refer to the
Analog-to-Digital Converter chapter of the SmartFusion Programmable Analog User’s Guide for more
information.
2- 82
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Table 2-97 • ABPS Performance Specifications (continued)
Specification
Test Conditions
Effective number of bits (ENOB)
Min.
Typ.
Max.
Units
12-bit mode 10 KHz
8.6
9.1
Bits
12-bit mode 100 KHz
8.6
9.1
Bits
10-bit mode 10 KHz
8.5
8.9
Bits
10-bit mode 100 KHz
8.5
8.9
Bits
8-bit mode 10 KHz
7.7
7.8
Bits
8-bit mode 100 KHz
7.7
7.8
Bits
1
MHz
GDEC[1:0] = 11
(±2.56 range), –1 dBFS input
SINAD – 1.76 dB
ENOB = --------------------------------------------6.02 dB/bit
EQ 11
Large-signal bandwidth
–1 dBFS input
Analog settling time
To 0.1% of final value (with ADC
load)
10
Input resistance
Power supply rejection ratio
DC (0–1 KHz)
ABPS power supply current
requirements (not including ADC or
VAREFx)
ABPS_EN = 1 (operational mode)
38
µs
1
M
40
dB
VCC33A
123
134
µA
VCC33AP
89
94
µA
VCC15A
1
µA
Note: *FS is full-scale error, defined as the difference between the actual value that triggers the transition to full-scale
and the ideal analog full-scale transition value. Full-scale error equals offset error plus gain error. Refer to the
Analog-to-Digital Converter chapter of the SmartFusion Programmable Analog User’s Guide for more
information.
R ev i si o n 1 0
2- 83
SmartFusion DC and Switching Characteristics
Comparator
Unless otherwise specified, performance is specified at 25°C with nominal power supply voltages.
Table 2-98 • Comparator Performance Specifications
Specification
Test Conditions
Input voltage range
Minimum
0
V
Maximum
2.56
V
Input offset voltage
Min.
HYS[1:0] = 00
Typ.
Max. Units
±1
±3
mV
Comparator 1, 3, 5, 7, 9 (measured at 2.56 V)
40
100
nA
Comparator 0, 2, 4, 6, 8 (measured at 2.56 V)
150
300
nA
(no hysteresis)
Input bias current
Input resistance
10
Power supply rejection ratio
DC (0 – 10 KHz)
Propagation delay
100 mV overdrive
50
M
60
dB
HYS[1:0] = 00
(no hysteresis)
15
18
ns
25
30
ns
0
±5
mV
±5
mV
±30
mV
±36
mV
±48
mV
±54
mV
±190
mV
±194
mV
100 mV overdrive
HYS[1:0] = 10
(with hysteresis)
Hysteresis
(± refers to rising and falling
threshold shifts, respectively)
HYS[1:0] = 00 Typical (25°C)
Across all corners (–40ºC to +100ºC)
HYS[1:0] = 01 Typical (25°C)
Across all corners (–40ºC to +100ºC)
HYS[1:0] = 10 Typical (25°C)
Across all corners (–40ºC to +100ºC)
HYS[1:0] = 11 Typical (25°C)
Across all corners (–40ºC to +100ºC)
Comparator current
requirements
(per comparator)
0
±3
± 16
0
±19
± 31
±12
±80
± 105
±80
VCC33A = 3.3 V (operational mode); COMP_EN = 1
VCC33A
150
165
µA
VCC33AP
140
165
µA
1
3
µA
VCC15A
2- 84
0
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Analog Sigma-Delta Digital to Analog Converter (DAC)
Unless otherwise noted, sigma-delta DAC performance is specified at 25°C with nominal power supply
voltages, using the internal sigma-delta modulators with 16-bit inputs, HCLK = 100 MHz, modulator
inputs updated at a 100 KHz rate, in voltage output mode with an external 160 pF capacitor to ground,
after trimming and digital [pre-]compensation.
Table 2-99 • Analog Sigma-Delta DAC
Specification
Test Conditions
Resolution
Min.
8
Output range
Current output mode
Output Impedance
6
Current output mode
Output voltage compliance
Voltage output mode
Bits
V
0 to 256
µA
10
12
K
M
V
0–3.4
V
0.3
±2
%
A2F060: –40ºC to +100ºC
0.3
±2
%
A2F200: –40ºC to +100ºC
1.2
±5.3
%
A2F500: –40ºC to +100ºC
0.3
±2
%
0.3
±2
%
0.3
±2
%
A2F200: –40ºC to +100ºC
1.2
±5.3
%
A2F500: –40ºC to +100ºC
0.3
±2
%
0.25
±1
mV
DACBYTE0 = h’00 (8-bit)
–40ºC to +100ºC
Current output mode
–40ºC to +100ºC
RMS deviation from BFSL
Differential non-linearity
Analog settling time
Power supply rejection ratio
24
0 to 2.56
0–2.7
A2F060: –40ºC to +100ºC
Integral non-linearity
Units
0–3.0
Current output mode
Output referred offset
Max.
10
Current output mode
–40ºC to +100ºC
Gain error
Typ.
DC, full scale output
33
1
±2.5
mV
0.3
±1
µA
1
±2.5
µA
0.1
0.3
% FS*
0.05
0.4
% FS*
Refer to
Figure 2-45 on
page 2-86
µs
34
dB
Note: *FS is full-scale error, defined as the difference between the actual value that triggers the transition to full-scale
and the ideal analog full-scale transition value. Full-scale error equals offset error plus gain error. Refer to the
Analog-to-Digital Converter chapter of the SmartFusion Programmable Analog User’s Guide for more
information.
R ev i si o n 1 0
2- 85
SmartFusion DC and Switching Characteristics
Table 2-99 • Analog Sigma-Delta DAC (continued)
Specification
Test Conditions
Min.
Typ.
Max.
Units
VCC33SDDx
30
35
µA
VCC15A
3
5
µA
VCC33SDDx
160
165
µA
VCC15A
33
35
µA
VCC33SDDx
280
285
µA
VCC15A
70
75
µA
Sigma-delta DAC power supply current Input = 0, EN = 1
requirements (not including VAREFx)
(operational mode)
Input = Half scale, EN = 1
(operational mode)
Input = Full scale, EN = 1
(operational mode)
Note: *FS is full-scale error, defined as the difference between the actual value that triggers the transition to full-scale
and the ideal analog full-scale transition value. Full-scale error equals offset error plus gain error. Refer to the
Analog-to-Digital Converter chapter of the SmartFusion Programmable Analog User’s Guide for more
information.
Sigma Delta DAC Settling Time
220
200
180
Settling Time (us)
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
7
8
9
Input Code
Figure 2-45 • Sigma-Delta DAC Setting Time
2- 86
R ev i sio n 1 0
10
32
48
64 128 255
SmartFusion Customizable System-on-Chip (cSoC)
Voltage Regulator
Table 2-100 • Voltage Regulator
Symbol
Parameter
Test Conditions
VOUT
Output voltage
VOS
Output offset voltage TJ = 25°C
ICC33A
Operation current
TJ = 25°C
TJ = 25°C
Min.
Typ.
Max.
Unit
1.425
1.5
1.575
V
11
mV
ILOAD = 1 mA
3.4
mA
ILOAD = 100 mA
11
mA
ILOAD = 0.5 A
21
mA
VOUT
Load regulation
TJ = 25°C
ILOAD = 1 mA to 0.5 A
5.8
mV
VOUT
Line regulation
TJ = 25°C
VCC33A = 2.97 V to 3.63 V
5.3
mV/V
5.3
mV/V
5.3
mV/V
ILOAD = 1 mA
0.63
V
ILOAD = 100 mA
0.84
V
ILOAD = 0.5 A
1.35
V
ILOAD = 1 mA
48
µA
ILOAD = 100 mA
736
µA
ILOAD = 0.5 A
12
mA
200
µs
ILOAD = 1 mA
VCC33A = 2.97 V to 3.63 V
ILOAD= 100 mA
VCC33A = 2.97 V to 3.63 V
ILOAD = 500mA
Dropout voltage1
IPTBASE
PTBase current
2
Startup time
TJ = 25°C
TJ = 25°C
TJ = 25°C
Notes:
1. Dropout voltage is defined as the minimum VCC33A voltage. The parameter is specified with respect to the output
voltage. The specification represents the minimum input-to-output differential voltage required to maintain regulation.
2. Assumes 10 µF.
R ev i si o n 1 0
2- 87
SmartFusion DC and Switching Characteristics
Typical Output Voltage
0.015
Load = 10 mA
0.01
Load = 100 mA
Offset Voltage (V)
0.005
Load = 500 mA
0
-0.005
-0.01
-0.015
-0.02
-0.025
-40
-20
0
20
40
60
80
100
Temperature (°C)
Figure 2-46 • Typical Output Voltage
Change in Output Voltage with Load (mV)
Load Regulation
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-40
-20
0
20
40
Temperature (°C)
Figure 2-47 • Load Regulation
2- 88
R ev i sio n 1 0
60
80
100
SmartFusion Customizable System-on-Chip (cSoC)
Serial Peripheral Interface (SPI) Characteristics
This section describes the DC and switching of the SPI interface. Unless otherwise noted, all output
characteristics given for a 35 pF load on the pins and all sequential timing characteristics are related to
SPI_x_CLK. For timing parameter definitions, refer to Figure 2-48 on page 2-90.
Table 2-101 • SPI Characteristics
Commercial Case Conditions: TJ = 85ºC, VDD = 1.425 V, –1 Speed Grade
Symbol
sp1
sp2
sp3
Description and Condition
A2F060
A2F200
A2F500
Unit
SPI_x_CLK = PCLK/2
20
NA
20
ns
SPI_x_CLK = PCLK/4
40
40
40
ns
SPI_x_CLK = PCLK/8
80
80
80
ns
SPI_x_CLK = PCLK/16
0.16
0.16
0.16
µs
SPI_x_CLK = PCLK/32
0.32
0.32
0.32
µs
SPI_x_CLK = PCLK/64
0.64
0.64
0.64
µs
SPI_x_CLK = PCLK/128
1.28
1.28
1.28
µs
SPI_x_CLK = PCLK/256
2.56
2.56
2.56
µs
SPI_x_CLK = PCLK/2
10
NA
10
ns
SPI_x_CLK = PCLK/4
20
20
20
ns
SPI_x_CLK = PCLK/8
40
40
40
ns
SPI_x_CLK = PCLK/16
0.08
0.08
0.08
µs
SPI_x_CLK = PCLK/32
0.16
0.16
0.16
µs
SPI_x_CLK = PCLK/64
0.32
0.32
0.32
µs
SPI_x_CLK = PCLK/128
0.64
0.64
0.64
µs
SPI_x_CLK = PCLK/256
1.28
1.28
1.28
us
SPI_x_CLK = PCLK/2
10
NA
10
ns
SPI_x_CLK = PCLK/4
20
20
20
ns
SPI_x_CLK = PCLK/8
40
40
40
ns
SPI_x_CLK = PCLK/16
0.08
0.08
0.08
µs
SPI_x_CLK = PCLK/32
0.16
0.16
0.16
µs
SPI_x_CLK = PCLK/64
0.32
0.32
0.32
µs
SPI_x_CLK = PCLK/128
0.64
0.64
0.64
µs
1.28
1.28
1.28
µs
4.7
4.7
4.7
ns
3.4
3.4
3.4
ns
SPI_x_CLK minimum period
SPI_x_CLK minimum pulse width high
SPI_x_CLK minimum pulse width low
SPI_x_CLK = PCLK/256
sp4
sp5
SPI_x_CLK, SPI_x_DO, SPI_x_SS rise time (10%-90%)
SPI_x_CLK, SPI_x_DO, SPI_x_SS fall time (10%-90%)
1
1
Notes:
1. These values are provided for a load of 35 pF. For board design considerations and detailed output buffer resistances,
use the corresponding IBIS models located on the Microsemi SoC Products Group website:
http://www.microsemi.com/soc/download/ibis/default.aspx.
2. For allowable pclk configurations, refer to the Serial Peripheral Interface Controller section in the SmartFusion
Microcontroller Subsystem User’s Guide.
R ev i si o n 1 0
2- 89
SmartFusion DC and Switching Characteristics
Table 2-101 • SPI Characteristics
Commercial Case Conditions: TJ = 85ºC, VDD = 1.425 V, –1 Speed Grade (continued)
Symbol
Description and Condition
sp6
Data from master (SPI_x_DO) setup time
sp7
2
Data from master (SPI_x_DO) hold time
sp8
SPI_x_DI setup time
sp9
2
SPI_x_DI hold time
A2F060
A2F200
A2F500
Unit
1
1
1
pclk cycles
1
1
1
pclk cycles
1
1
1
pclk cycles
1
1
1
pclk cycles
2
2
Notes:
1. These values are provided for a load of 35 pF. For board design considerations and detailed output buffer resistances,
use the corresponding IBIS models located on the Microsemi SoC Products Group website:
http://www.microsemi.com/soc/download/ibis/default.aspx.
2. For allowable pclk configurations, refer to the Serial Peripheral Interface Controller section in the SmartFusion
Microcontroller Subsystem User’s Guide.
SP1
SP4
SP2
SP5
SP3
90%
50% 50%
SPI_x_CLK
SPO = 0
50%
10%
10%
SPI_x_CLK
SPO = 1
90%
90%
SPI_x_SS
10%
1 0%
SP4
SP5
SP6
SP7
90%
9 0%
SPI_x_DO
5 0%
5 0%
10%
SP8
SPI_x_DI
MSB
50%
SP9
MSB
SP5
10%
SP4
50%
Figure 2-48 • SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1)
2- 90
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Inter-Integrated Circuit (I2C) Characteristics
This section describes the DC and switching of the IC interface. Unless otherwise noted, all output
characteristics given are for a 100 pF load on the pins. For timing parameter definitions, refer to Figure 249 on page 2-92.
Table 2-102 • I2C Characteristics
Commercial Case Conditions: TJ = 85ºC, VDD = 1.425 V, –1 Speed Grade
Parameter
Condition
Value
Unit
Minimum input low voltage
–
SeeTable 2-36 on
page 2-30
–
Maximum input low voltage
–
See Table 2-36
–
Minimum input high voltage
–
See Table 2-36
–
Maximum input high voltage
–
See Table 2-36
–
VOL
Maximum output voltage low
IOL = 8 mA
See Table 2-36
–
IIL
Input current high
–
See Table 2-36
–
IIH
Input current low
–
See Table 2-36
–
Vhyst
Hysteresis of Schmitt trigger
inputs
–
See Table 2-33 on
page 2-29
V
TFALL
Fall time 2
VIHmin to VILMax, Cload = 400 pF
15.0
ns
VIHmin to VILMax, Cload = 100 pF
4.0
ns
VILMax to VIHmin, Cload = 400pF
19.5
ns
VILMax to VIHmin, Cload = 100pF
5.2
ns
VIN = 0, f = 1.0 MHz
8.0
pF
VIL
VIH
TRISE
Definition
Rise time 2
Cin
Pin capacitance
Rpull-up
Output buffer maximum pulldown Resistance 1
–
50

Rpull-down
Output buffer maximum pull-up
Resistance 1
–
150

Dmax
Maximum data rate
Fast mode
400
Kbps
tLOW
Low period of I2C_x_SCL 3
–
1
pclk cycles
tHIGH
3
–
1
pclk cycles
–
1
pclk cycles
–
1
pclk cycles
–
1
pclk cycles
–
1
pclk cycles
tHD;STA
High period of I2C_x_SCL
START hold time
3
tSU;STA
START setup time
tHD;DAT
DATA hold time 3
tSU;DAT
DATA setup time
3
3
Notes:
1. These maximum values are provided for information only. Minimum output buffer resistance values depend on
VCCxxxxIOBx, drive strength selection, temperature, and process. For board design considerations and detailed output
buffer resistances, use the corresponding IBIS models located on the SoC Products Group website at
http://www.microsemi.com/soc/download/ibis/default.aspx.
2. These values are provided for a load of 100 pF and 400 pF. For board design considerations and detailed output buffer
resistances, use the corresponding IBIS models located on the SoC Products Group website at
http://www.microsemi.com/soc/download/ibis/default.aspx.
3. For allowable Pclk configurations, refer to the Inter-Integrated Circuit (I2C) Peripherals section in the SmartFusion
Microcontroller Subsystem User’s Guide.
R ev i si o n 1 0
2- 91
SmartFusion DC and Switching Characteristics
Table 2-102 • I2C Characteristics
Commercial Case Conditions: TJ = 85ºC, VDD = 1.425 V, –1 Speed Grade (continued)
Parameter
Definition
3
tSU;STO
STOP setup time
tFILT
Maximum spike width filtered
Condition
Value
Unit
–
1
pclk cycles
–
50
ns
Notes:
1. These maximum values are provided for information only. Minimum output buffer resistance values depend on
VCCxxxxIOBx, drive strength selection, temperature, and process. For board design considerations and detailed output
buffer resistances, use the corresponding IBIS models located on the SoC Products Group website at
http://www.microsemi.com/soc/download/ibis/default.aspx.
2. These values are provided for a load of 100 pF and 400 pF. For board design considerations and detailed output buffer
resistances, use the corresponding IBIS models located on the SoC Products Group website at
http://www.microsemi.com/soc/download/ibis/default.aspx.
3. For allowable Pclk configurations, refer to the Inter-Integrated Circuit (I2C) Peripherals section in the SmartFusion
Microcontroller Subsystem User’s Guide.
SDA
TRISE
SCL
tLOW
tSU;STA
S
tHD;STA
TFALL
tHIGH
tHD;DAT
tSU;STO
tSU;DAT
P
Figure 2-49 • I2C Timing Parameter Definition
2- 92
R ev i sio n 1 0
3 – SmartFusion Development Tools
Designing with SmartFusion cSoCs involves three different types of design: FPGA design, embedded
design and analog design. These roles can be filled by three different designers, two designers or even a
single designer, depending on company structure and project complexity.
Types of Design Tools
Microsemi has developed design tools and flows to meet the needs of these three types of designers so
they can work together smoothly on a single project (Figure 3-1).
Embedded Design
FPGA Design
Software IDE
(SoftConsole, Keil, IAR)
MSS Configurator
MSS Configuration – Analog Configuration
Design Entry and IP Libraries
Simulation and Synthesis
Compile and Layout
Timing and Power Analysis
Hardware Debug
Drivers and Sample Projects
Application Development
Build Project
Simulation
Software Debug
Hardware Interfaces
FlashPro4, ULINK, J-LINK
Figure 3-1 •
Three Design Roles
FPGA Design
Libero System-on-Chip (SoC) software is Microsemi’s comprehensive software toolset for designing with
all Microsemi FPGAs and cSoCs. Libero SoC includes industry-leading synthesis, simulation and debug
tools from Synopsys® and Mentor Graphics®, as well as innovative timing and power optimization and
analysis.
R ev i si o n 1 0
3 -1
SmartFusion Development Tools
Embedded Design
Microsemi offers FREE SoftConsole Eclipse based IDE, which includes the GNU C/C++ compiler and
GDB debugger. Microsemi also offers evaluation versions of software from Keil and IAR, with full
versions available from respective suppliers.
Analog Design
The MSS configurator provides graphical configuration for current, voltage and temperature monitors,
sample sequencing setup and post-processing configuration, as well as DAC output.
The MSS configurator creates a bridge between the FPGA fabric and embedded designers so device
configuration can be easily shared between multiple developers.
The MSS configurator includes the following:
•
A simple configurator for the embedded designer to control the MSS peripherals and I/Os
•
A method to import and view a hardware configuration from the FPGA flow into the embedded
flow containing the memory map
•
Automatic generation of drivers for any peripherals or soft IP used in the system configuration
•
Comprehensive analog configuration for the programmable analog components
•
Creation of a standard MSS block to be used in SmartDesign for connection of FPGA fabric
designs and IP
Figure 3-2 •
3- 2
MSS Configurator
R ev isio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
SmartFusion Ecosystem
The Microsemi SoC Products Group has a long history of supplying comprehensive FPGA development
tools and recognizes the benefit of partnering with industry leaders to deliver the optimum usability and
productivity to customers. Taking the same approach with processor development, Microsemi has
partnered with key industry leaders in the microcontroller space to provide the robust SmartFusion
ecosystem.
Microsemi is partnering with Keil and IAR to provide Software IDE support to SmartFusion system
designers. The result is a robust solution that can be easily adopted by developers who are already doing
embedded design. The learning path is straightforward for FPGA designers.
Support for the SoC Products Group device and ecosystem resources is represented in Figure 3-3.
Application Code
Customer Secret Sauce
Middleware
TCP/IP, HTTP, SMTP, DHCP, LCD
Hardware
Abstraction
Layer
Figure 3-3 •
eNVM
Timer
Ethernet
SPI
12C
Drivers
UART
µC/OS-III, RTX, Unison, FreeRTOS
OS/RTOS
Microsemi CMSIS-based HAL
SmartFusion Ecosystem
Figure 3-3 shows the SmartFusion stack with examples of drivers, RTOS, and middleware from
Microsemi and partners. By leveraging the SmartFusion stack, designers can decide at which level to
add their own customization to their design, thus speeding time to market and reducing overhead in the
design.
ARM
Because an ARM processor was chosen for SmartFusion cSoCs, Microsemi's customers can benefit
from the extensive ARM ecosystem. By building on Microsemi supplied hardware abstraction layer (HAL)
and drivers, third party vendors can easily port RTOS and middleware for the SmartFusion cSoC.
•
ARM Cortex-M Series Processors
•
ARM Cortex-M3 Processor Resource
•
ARM Cortex-M3 Technical Reference Manual
•
ARM Cortex-M3 Processor Software Development for ARM7TDMI Processor Programmers
White Paper
R ev i si o n 1 0
3 -3
SmartFusion Development Tools
Compile and Debug
Microsemi's SoftConsole is a free Eclipse-based IDE that enables the rapid production of C and C++
executables for Microsemi FPGA and cSoCs using Cortex-M3, Cortex-M1 and Core8051s. For
SmartFusion support, SoftConsole includes the GNU C/C++ compiler and GDB debugger. Additional
examples can be found on the SoftConsole page:
•
Using UART with SmartFusion: SoftConsole Standalone Flow Tutorial
–
•
Design Files
Displaying POT Level with LEDs: Libero SoC and SoftConsole Flow Tutorial for SmartFusion
–
Design Files
IAR Embedded Workbench® for ARM/Cortex is an integrated development environment for building and
debugging embedded ARM applications using assembler, C and C++. It includes a project manager,
editor, build and debugger tools with support for RTOS-aware debugging on hardware or in a simulator.
•
Designing SmartFusion cSoC with IAR Systems
•
IAR Embedded Workbench IDE User Guide for ARM
•
Download Evaluation or Kickstart version of IAR Embedded Workbench for ARM
Keil's Microcontroller Development Kit comes in two editions: MDK-ARM and MDK Basic. Both editions
feature µVision®, the ARM Compiler, MicroLib, and RTX, but the MDK Basic edition is limited to 256K so
that small applications are more affordable.
•
Designing SmartFusion cSoC with Keil
•
Using Keil µVision and Microsemi SmartFusion cSoC
–
Programming file for use with this tutorial
•
Keil Microcontroller Development Kit for ARM Product Manuals
•
Download Evaluation version of Keil MDK-ARM
Software IDE
SoftConsole
Vision IDE
Embedded Workbench
www.microsemi.com/soc
www.keil.com
www.iar.com
Free with Libero SoC
32 K code limited
32 K code limited
N/A
Full version
Full version
Compiler
GNU GCC
RealView C/C++
IAR ARM Compiler
Debugger
GDB debug
Vision Debugger
C-SPY Debugger
No
Vision Simulator
Yes
FlashPro4
ULINK2 or ULINK-ME
J-LINK or J-LINK Lite
Website
Free versions from SoC
Products Group
Available from Vendor
Instruction Set Simulator
Debug Hardware
Operating Systems
FreeRTOS™ is a portable, open source, royalty free, mini real-time kernel (a free-to-download and freeto-deploy RTOS that can be used in commercial applications without any requirement to expose your
proprietary source code). FreeRTOS is scalable and designed specifically for small embedded systems.
This FreeRTOS version ported by Microsemi is 6.0.1. For more information, visit the FreeRTOS website:
www.freertos.org
3- 4
•
SmartFusion Webserver Demo Using uIP and FreeRTOS
•
SmartFusion cSoC: Running Webserver, TFTP on IwIP TCP/IP Stack Application Note
R ev isio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Emcraft Systems provides porting of the open-source U-boot firmware and uClinux™ kernel to the
SmartFusion cSoC, a Linux®-based cross-development framework, and other complementary
components. Combined with the release of its A2F-Linux Evaluation Kit, this provides a low-cost platform
for evaluation and development of Linux (uClinux) on the Cortex-M3 CPU core of the Microsemi
SmartFusion cSoC.
•
Emcraft Linux on Microsemi's SmartFusion cSoC
Keil offers the RTX Real-Time Kernel as a royalty-free, deterministic RTOS designed for ARM and
Cortex-M devices. It allows you to create programs that simultaneously perform multiple functions and
helps to create applications which are better structured and more easily maintained.
•
The RTX Real-Time Kernel is included with MDK-ARM. Download the Evaluation version of Keil
MDK-ARM.
•
RTX source code is available as part of Keil/ARM Real-Time Library (RL-ARM), a group of tightlycoupled libraries designed to solve the real-time and communication challenges of embedded
systems based on ARM-powered microcontroller devices. The RL-ARM library now supports
SmartFusion cSoCs and designers with additional key features listed in the "Middleware" section
on page 3-5.
Micrium supports SmartFusion cSoCs with the company's flagship µC/OS family, recognized for a variety
of features and benefits, including unparalleled reliability, performance, dependability, impeccable source
code and vast documentation. Micrium supports the following products for SmartFusion cSoCs and
continues to work with Microsemi on additional projects.
•
SmartFusion Quickstart Guide for Micrium µC/OS-III Examples
–
Design Files
µC/OS-III™, Micrium's newest RTOS, is designed to save time on your next embedded project and puts
greater control of the software in your hands.
RoweBots provides an ultra tiny Linux-compatible RTOS called Unison for SmartFusion. Unison consists
of a set of modular software components, which, like Linux, are either free or commercially licensed.
Unison offers POSIX® and Linux compatibility with hard real-time performance, complete I/O modules
and an easily understood environment for device driver programming. Seamless integration with FPGA
and analog features are fast and easy.
•
Unison V4-based products include a free Unison V4 Linux and POSIX-compatible kernel with
serial I/O, file system, six demonstration programs, upgraded documentation and source code for
Unison V4, and free (for non-commercial use) Unison V4 TCP/IP server. Commercial license
upgrade is available for Unison V4 TCP/IP server with three demonstration programs, DHCP
client and source code.
•
Unison V5-based products include commercial Unison V5 Linux- and POSIX-compatible kernel
with serial I/O, file system, extensive feature set, full documentation, source code and more than
20 demonstration programs, Unison V5 TCP/IPv4 with extended feature set, sockets interface,
multiple network interfaces, PPP support, DHCP client, documentation, source code and six
demonstration programs, and multiple other features.
Middleware
Microsemi has ported both uIP and IwIP for Ethernet support as well as including TFTP file service.
•
SmartFusion Webserver Demo Using uIP and FreeRTOS
•
SmartFusion: Running Webserver, TFTP on IwIP TCP/IP Stack Application Note
The Keil/ARM Real-Time Library (RL-ARM)1, in addition to RTX source, includes the following:
•
RL-TCPnet (TCP/IP) – The Keil RL-TCPnet library, supporting full TCP/IP and UDP protocols, is a
full networking suite specifically written for small ARM and Cortex-M processor-based
microcontrollers. TCPnet is now ported to and supports SmartFusion Cortex-M3. It is highly
optimized, has a small code footprint, and gives excellent performance, providing a wide range of
application level protocols and examples such as FTP, SNMP, SOAP and AJAX. An HTTP server
example of TCPnet working in a SmartFusion design is available.
1. The CAN and USB functions within RL-ARM are not supported for SmartFusion cSoC.
R ev i si o n 1 0
3 -5
SmartFusion Development Tools
•
Flash File System (RL-Flash) allows your embedded applications to create, save, read, and
modify files in standard storage devices such as ROM, RAM, or FlashROM, using a standard
serial peripheral interface (SPI). Many ARM-based microcontrollers have a practical requirement
for a standard file system. With RL-FlashFS you can implement new features in embedded
applications such as data logging, storing program state during standby modes, or storing
firmware upgrades.
Micrium, in addition to µC/OS-III®, offers the following support for SmartFusion cSoC:
•
µC/TCP-IP™ is a compact, reliable, and high-performance stack built from the ground up by
Micrium and has the quality, scalability, and reliability that translates into a rapid configuration of
network options, remarkable ease-of-use, and rapid time-to-market.
•
µC/Probe™ is one of the most useful tools in embedded systems design and puts you in the
driver's seat, allowing you to take charge of virtually any variable, memory location, and I/O port in
your embedded product, while your system is running.
References
PCB Files
A2F500 SmartFusion Development Kit PCB Files
www.microsemi.com/soc/download/rsc/?f=A2F500_DEV_KIT_BF
A2F200 SmartFusion Development Kit PCB Files
www.microsemi.com/soc/download/rsc/?f=A2F_DEV_KIT_BF
Application Notes
SmartFusion cSoC Board Design Guidelines
www.microsemi.com/soc/documents/A2F_AC359_AN.pdf
3- 6
R ev isio n 1 0
4 – SmartFusion Programming
SmartFusion cSoCs have three separate flash areas that can be programmed:
1. The FPGA fabric
2. The embedded nonvolatile memories (eNVMs)
3. The embedded flash ROM (eFROM)
There are essentially three methodologies for programming these areas:
1. In-system programming (ISP)
2. In-application programming (IAP)
a. A2F060 and A2F500: The FPGA fabric, eNVM, and eFROM
b. A2F200: Only the FPGA fabric and the eNVM
3. Pre-programming (non-ISP)
Programming, whether ISP or IAP methodologies are employed, can be done in two ways:
1. Securely using the on chip AES decryption logic
2. In plain text
In-System Programming
In-System Programming is performed with the aid of external JTAG programming hardware. Table 4-1
describes the JTAG programming hardware that will program a SmartFusion cSoC and Table 4-2 defines
the JTAG pins that provide the interface for the programming hardware.
Table 4-1 • Supported JTAG Programming Hardware
Dongle
Source
JTAG
SWD1
SWV2
Program
FPGA
Program
eFROM
Program
eNVM
FlashPro3/4
SoC
Products
Group
Yes
No
No
Yes
Yes
Yes
ULINK Pro
Keil
Yes
Yes
Yes
Yes3
Yes3
Yes
ULINK2
Keil
Yes
Yes
Yes
Yes3
Yes3
Yes
Yes
3
Yes3
Yes
IAR J-Link
IAR
Yes
Yes
Yes
Notes:
1. SWD = ARM Serial Wire Debug
2. SWV = ARM Serial Wire Viewer
3. Planned support
Table 4-2 • JTAG Pin Descriptions
Pin Name
Description
JTAGSEL
ARM Cortex-M3 or FPGA test access port (TAP) controller selection
TRSTB
Test reset bar
TCK
Test clock
TMS
Test mode select
TDI
Test data input
TDO
Test data output
R ev i si o n 1 0
4 -7
SmartFusion Programming
The JTAGSEL pin selects the FPGA TAP controller or the Cortex-M3 debug logic. When JTAGSEL is
asserted, the FPGA TAP controller is selected and the TRSTB input into the Cortex-M3 is held in a reset
state (logic 0), as depicted in Figure 4-1. Users should tie the JTAGSEL pin high externally.
Microsemi’s free Eclipse-based IDE, SoftConsole, has the ability to control the JTAGSEL pin directly with
the FlashPro4 programmer. Manual jumpers are provided on the evaluation and development kits to
allow manual selection of this function for the J-Link and ULINK debuggers.
Note: Standard ARM JTAG connectors do not have access to the JTAGSEL pin. SoftConsole
automatically selects the appropriate TAP controller using the CTXSELECT JTAG command.
When using SoftConsole, the state of JTAGSEL is a "don't care."
VJTAG (1.5 V to 3.3. V nominal)
TAP
Controller
JTAG_SEL
TRSTB
FPGA TAP
Controller
Figure 4-1 •
Cortex-M3
TRSTB
FPGA
Programming Control
TRSTB Logic
In-Application Programming
In-application programming refers to the ability to reprogram the various flash areas under direct
supervision of the Cortex-M3.
Reprogramming the FPGA Fabric Using the Cortex-M3
In this mode, the Cortex-M3 is executing the programming algorithm on-chip. The IAP driver can be
incorporated into the design project and executed from eNVM or eSRAM. The SoC Products Group
provides working example projects for SoftConsole, IAR, and Keil development environments. These can
be downloaded via the SoC Products Group Firmware Catalog. The new bitstream to be programmed
into the FPGA can reside on the user’s printed circuit board (PCB) in a separate SPI flash memory.
Alternately, the user can modify the existing projects supplied by the SoC Products Group and, via
custom handshaking software, throttle the download of the new image and program the FPGA a piece at
a time in real time. A cost-effective and reliable approach would be to store the bitstream in an external
SPI flash. Another option is storing a redundant bitstream image in an external SPI flash and loading the
newest version into the FPGA only when receiving an IAP command. Since the FPGA I/Os are tristated
or held at predefined or last known state during FPGA programming, the user must use MSS I/Os to
interface to external memories. Since there are two SPI controllers in the MSS, the user can dedicate
one to an SPI flash and the other to the particulars of an application. The amount of flash memory
required to program the FPGA always exceeds the size of the eNVM block that is on-chip. The external
memory controller (EMC) cannot be used as an interface to a memory device for storage of a bitstream
because its I/O pads are FPGA I/Os; hence they are tristated when the FPGA is in a programming state.
The MSS resets itself after IAP of the FPGA fabric. This reset is internally asserted on MSS_RESETN by
the power supply monitor (PSM) and reset controller of the MSS.
4- 8
R ev isio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Re-Programming the eNVM Blocks Using the Cortex-M3
In this mode the Cortex-M3 is executing the eNVM programming algorithm from eSRAM. Since individual
pages (132 bytes) of the eNVM can be write-protected, the programming algorithm software can be
protected from inadvertent erasure. When reprogramming the eNVM, both MSS I/Os and FPGA I/Os are
available as interfaces for sourcing the new eNVM image. The SoC Products Group provides working
example projects for SoftConsole, IAR, and Keil development environments. These can be downloaded
via the SoC Products Group Firmware Catalog.
Alternately, the eNVM can be reprogrammed by the Cortex-M3 via the IAP driver. This is necessary when
using an encrypted image.
Secure Programming
For background, refer to the "Security in Low Power Flash Devices" chapter of the Fusion FPGA Fabric
User’s Guide on the SoC Products Group website. SmartFusion ISP behaves identically to Fusion ISP.
IAP of SmartFusion cSoCs is accomplished by using the IAP driver. Only the FPGA fabric and the eNVM
can be reprogrammed with the protection of security measures by using the IAP driver.
Typical Programming and Erase Times
Table 4-3 documents the typical programming and erase times for two components of SmartFusion
cSoCs, FPGA fabric and eNVM, using the SoC Products Group’s FlashPro hardware and software.
These times will be different for other ISP and IAP methods. The Program action in FlashPro software
includes erase, program, and verify to complete.
The typical programming (including erase) time per page of the eNVM is 8 ms.
Table 4-3 • Typical Programming and Erase Times
FPGA Fabric (seconds)
eNVM (seconds)
A2F200
A2F500
A2F200
A2F500
Erase
21
21
N/A
N/A
Program
8
15
18
26
Verify
9
16
26
42
References
User’s Guides
DirectC User’s Guide
www.microsemi.com/soc/documents/DirectC_UG.pdf
In-System Programming (ISP) of Microsemi’s Low-Power Flash Devices Using FlashPro4/3/3X
www.microsemi.com/soc/documents/LPF_AC386_AN.pdf
Programming Flash Devices HandBook
www.microsemi.com/soc/documents/Flash_Program_HBs.pdf
Application Notes on IAP Programming Technique
SmartFusion cSoC: Programming FPGA Fabric and eNVM Using In-Application Programming Interface
App Note
www.microsemi.com/soc/documents/A2F_AC362_AN.pdf
SmartFusion cSoC: Basic Bootloader and Field Upgrade eNVM Through IAP Interface App Note
www.microsemi.com/soc/documents/A2F_AC372_AN.pdf
R ev i si o n 1 0
4 -9
5 – Pin Descriptions
Supply Pins
Name
Type
GND
Ground
Digital ground to the FPGA fabric, microcontroller subsystem and GPIOs
Description
GND15ADC0
Ground
Quiet analog ground to the 1.5 V circuitry of the first analog-to-digital converter (ADC)
GND15ADC1
Ground
Quiet analog ground to the 1.5 V circuitry of the second ADC
GND15ADC2
Ground
Quite analog ground to the 1.5 V circuitry of the third ADC
GND33ADC0
Ground
Quiet analog ground to the 3.3 V circuitry of the first ADC
GND33ADC1
Ground
Quiet analog ground to the 3.3 V circuitry of the second ADC
GND33ADC2
Ground
Quiet analog ground to the 3.3 V circuitry of the third ADC
GNDA
Ground
Quiet analog ground to the analog front-end
GNDAQ
Ground
Quiet analog ground to the analog I/O of SmartFusion cSoCs
GNDENVM
Ground
Digital ground to the embedded nonvolatile memory (eNVM)
GNDLPXTAL
Ground
Analog ground to the low power 32 KHz crystal oscillator circuitry
GNDMAINXTAL
Ground
Analog ground to the main crystal oscillator circuitry
GNDQ
Ground
Quiet digital ground supply voltage to input buffers of I/O banks. Within the package, the
GNDQ plane is decoupled from the simultaneous switching noise originated from the
output buffer ground domain. This minimizes the noise transfer within the package and
improves input signal integrity. GNDQ needs to always be connected on the board to
GND.
GNDRCOSC
Ground
Analog ground to the integrated RC oscillator circuit
GNDSDD0
Ground
Analog ground to the first sigma-delta DAC
GNDSDD1
Ground
Common analog ground to the second and third sigma-delta DACs
GNDTM0
Ground
Analog temperature monitor common ground for signal conditioning blocks SCB 0 and
SCB 1 (see information for pins "TM0" and "TM1" in the "Analog Front-End (AFE)"
section on page 5-14).
GNDTM1
Ground
Analog temperature monitor common ground for signal conditioning block SCB 2 and
SBCB 3 (see information for pins "TM2" and "TM3" in the "Analog Front-End (AFE)"
section on page 5-14).
GNDTM2
Ground
Analog temperature monitor common ground for signal conditioning block SCB4
GNDVAREF
Ground
Analog ground reference used by the ADC. This pad should be connected to a quiet
analog ground.
VCC
Supply
Digital supply to the FPGA fabric and MSS, nominally 1.5 V. VCC is also required for
powering the JTAG state machine, in addition to VJTAG. Even when a SmartFusion
cSoC is in bypass mode in a JTAG chain of interconnected devices, both VCC and
VJTAG must remain powered to allow JTAG signals to pass through the SmartFusion
cSoC.
Notes:
1. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A,
VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL.
2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC,
VCC15A, and VCC15ADCx.
3. For more details on VCCPLLx capacitor recommendations, refer to the application note AC359, SmartFusion cSoC
Board Design Guidelines, the "PLL Power Supply Decoupling Scheme" section.
R ev i si o n 1 0
5 -1
Pin Descriptions
Name
Type
Description
VCC15A
Supply
Clean analog 1.5 V supply to the analog circuitry. Always power this pin.
VCC15ADC0
Supply
Analog 1.5 V supply to the first ADC. Always power this pin.
VCC15ADC1
Supply
Analog 1.5 V supply to the second ADC. Always power this pin.
VCC15ADC2
Supply
Analog 1.5 V supply to the third ADC. Always power this pin.
VCC33A
Supply
Clean 3.3 V analog supply to the analog circuitry. VCC33A is also used to feed the
1.5 V voltage regulator for designs that do not provide an external supply to VCC. Refer
to the Voltage Regulator (VR), Power Supply Monitor (PSM), and Power Modes section
in the SmartFusion Microcontroller Subsystem User’s Guide for more information.
VCC33ADC0
Supply
Analog 3.3 V supply to the first ADC. If unused, Microsemi recommends connecting this
pin to a 3.3 V supply.1
VCC33ADC1
Supply
Analog 3.3 V supply to the second ADC. If unused, Microsemi recommends connecting
this pin to a 3.3 V supply.1
VCC33ADC2
Supply
Analog 3.3 V supply to the third ADC. If unused, Microsemi recommends connecting
this pin to a 3.3 V supply.1
VCC33AP
Supply
Analog clean 3.3 V supply to the charge pump. To avoid high current draw, VCC33AP
should be powered up simultaneously with or after VCC33A. Can be pulled down if
unused.1
VCC33N
Supply
–3.3 V output from the voltage converter. A 2.2 µF capacitor must be connected from
this pin to GND. Analog charge pump capacitors are not needed if none of the analog
SCB features are used and none of the SDDs are used. In that case it should be left
unconnected.
VCC33SDD0
Supply
Analog 3.3 V supply to the first sigma-delta DAC
VCC33SDD1
Supply
Common analog 3.3 V supply to the second and third sigma-delta DACs
VCCENVM
Supply
Digital 1.5 V power supply to the embedded nonvolatile memory blocks. To avoid high
current draw, VCC should be powered up before or simultaneously with VCCENVM.
VCCESRAM
Supply
Digital 1.5 V power supply to the embedded SRAM blocks. Available only on the
208PQFP package. It should be connected to VCC (in other packages, it is internally
connected to VCC).
VCCFPGAIOB0
Supply
Digital supply to the FPGA fabric I/O bank 0 (north FPGA I/O bank) for the output
buffers and I/O logic.
Each bank can have a separate VCCFPGAIO connection. All I/Os in a bank will run off
the same VCCFPGAIO supply. VCCFPGAIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V,
nominal voltage. Unused I/O banks should have their corresponding VCCFPGAIO pins
tied to GND.
VCCFPGAIOB1
Supply
Digital supply to the FPGA fabric I/O bank 1 (east FPGA I/O bank) for the output buffers
and I/O logic.
Each bank can have a separate VCCFPGAIO connection. All I/Os in a bank will run off
the same VCCFPGAIO supply. VCCFPGAIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V,
nominal voltage. Unused I/O banks should have their corresponding VCCFPGAIO pins
tied to GND.
Notes:
1. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A,
VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL.
2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC,
VCC15A, and VCC15ADCx.
3. For more details on VCCPLLx capacitor recommendations, refer to the application note AC359, SmartFusion cSoC
Board Design Guidelines, the "PLL Power Supply Decoupling Scheme" section.
5- 2
R ev isio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Name
VCCFPGAIOB5
Type
Description
Supply
Digital supply to the FPGA fabric I/O bank 5 (west FPGA I/O bank) for the output buffers
and I/O logic.
Each bank can have a separate VCCFPGAIO connection. All I/Os in a bank will run off
the same VCCFPGAIO supply. VCCFPGAIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V,
nominal voltage. Unused I/O banks should have their corresponding VCCFPGAIO pins
tied to GND.
VCCLPXTAL
Supply
Analog supply to the low power 32 KHz crystal oscillator. Always power this pin.1
VCCMAINXTAL
Supply
Analog supply to the main crystal oscillator circuit. Always power this pin.1
VCCMSSIOB2
Supply
Supply voltage to the microcontroller subsystem I/O bank 2 (east MSS I/O bank) for the
output buffers and I/O logic.
Each bank can have a separate VCCMSSIO connection. All I/Os in a bank will run off
the same VCCMSSIO supply. VCCMSSIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal
voltage. Unused I/O banks should have their corresponding VCCMSSIO pins tied to
GND.
VCCMSSIOB4
Supply
Supply voltage to the microcontroller subsystem I/O bank 4 (west MSS I/O bank) for the
output buffers and I/O logic.
Each bank can have a separate VCCMSSIO connection. All I/Os in a bank will run off
the same VCCMSSIO supply. VCCMSSIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal
voltage. Unused I/O banks should have their corresponding VCCMSSIO pins tied to
GND.
VCCPLLx
Supply
Analog 1.5 V supply to the PLL. Always power this pin.
VCCRCOSC
Supply
Analog supply to the integrated RC oscillator circuit. Always power this pin.1
VCOMPLAx
Supply
Analog ground for the PLL
VDDBAT
Supply
External battery connection to the low power 32 KHz crystal oscillator (along with
VCCLPXTAL), RTC, and battery switchover circuit. Can be pulled down if unused.
Notes:
1. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A,
VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL.
2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC,
VCC15A, and VCC15ADCx.
3. For more details on VCCPLLx capacitor recommendations, refer to the application note AC359, SmartFusion cSoC
Board Design Guidelines, the "PLL Power Supply Decoupling Scheme" section.
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5 -3
Pin Descriptions
Name
Type
VJTAG
Supply
Description
Digital supply to the JTAG controller
SmartFusion cSoCs have a separate bank for the dedicated JTAG pins. The JTAG pins
can be run at any voltage from 1.5 V to 3.3 V (nominal). Isolating the JTAG power
supply in a separate I/O bank gives greater flexibility in supply selection and simplifies
power supply and PCB design. If the JTAG interface is neither used nor planned to be
used, the VJTAG pin together with the TRSTB pin could be tied to GND. Note that VCC
is required to be powered for JTAG operation; VJTAG alone is insufficient. If a
SmartFusion cSoC is in a JTAG chain of interconnected boards and it is desired to
power down the board containing the device, this can be done provided both VJTAG
and VCC to the device remain powered; otherwise, JTAG signals will not be able to
transition the device, even in bypass mode. See "JTAG Pins" section on page 5-10.
VPP
Supply
Digital programming circuitry supply
SmartFusion cSoCs support single-voltage in-system programming (ISP) of the
configuration flash, embedded FlashROM (eFROM), and embedded nonvolatile
memory (eNVM).
For programming, VPP should be in the 3.3 V ± 5% range. During normal device
operation, VPP can be left floating or can be tied to any voltage between 0 V and 3.6 V.
When the VPP pin is tied to ground, it shuts off the charge pump circuitry, resulting in no
sources of oscillation from the charge pump circuitry. For proper programming, 0.01μF,
and 0.1μF to 1μF capacitors, (both rated at 16 V) are to be connected in parallel across
VPP and GND, and positioned as close to the FPGA pins as possible.
Notes:
1. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A,
VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL.
2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC,
VCC15A, and VCC15ADCx.
3. For more details on VCCPLLx capacitor recommendations, refer to the application note AC359, SmartFusion cSoC
Board Design Guidelines, the "PLL Power Supply Decoupling Scheme" section.
5- 4
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SmartFusion Customizable System-on-Chip (cSoC)
User-Defined Supply Pins
Name
Type
Polarity/
Bus Size
VAREF0
Input
1
Description
Analog reference voltage for first ADC
The SmartFusion cSoC can be configured to generate a 2.56 V internal reference
that can be used by the ADC. While using the internal reference, the reference
voltage is output on the VAREFOUT pin for use as a system reference. If a
different reference voltage is required, it can be supplied by an external source
and applied to this pin. The valid range of values that can be supplied to the ADC
is 1.0 V to 3.3 V. When VAREF0 is internally generated, a bypass capacitor must
be connected from this pin to ground. The value of the bypass capacitor should be
between 3.3 µF and 22 µF, which is based on the needs of the individual designs.
The choice of the capacitor value has an impact on the settling time it takes the
VAREF0 signal to reach the required specification of 2.56 V to initiate valid
conversions by the ADC. If the lower capacitor value is chosen, the settling time
required for VAREF0 to achieve 2.56 V will be shorter than when selecting the
larger capacitor value. The above range of capacitor values supports the accuracy
specification of the ADC, which is detailed in the datasheet. Designers choosing
the smaller capacitor value will not obtain as much margin in the accuracy as that
achieved with a larger capacitor value. See the Analog-to-Digital Converter (ADC)
section in the SmartFusion Programmable Analog User’s Guide for more
information. The SoC Products Group recommends customers use 10 µF as the
value of the bypass capacitor. Designers choosing to use an external VAREF0
need to ensure that a stable and clean VAREF0 source is supplied to the VAREF0
pin before initiating conversions by the ADC. To use the internal voltage reference,
you must connect the VAREFOUT pin to the appropriate ADC VAREFx input—
either the VAREF0 or VAREF1 pin—on the PCB.
VAREF1
Input
1
Analog reference voltage for second ADC
See "VAREF0" above for more information.
VAREF2
Input
1
Analog reference voltage for third ADC
See "VAREF0" above for more.
VAREFOUT
Out
1
Internal 2.56 V voltage reference output. Can be used to provide the two ADCs
with a unique voltage reference externally by connecting VAREFOUT to both
VAREF0 and VAREF1. To use the internal voltage reference, you must connect
the VAREFOUT pin to the appropriate ADC VAREFx input—either the VAREF0 or
VAREF1 pin—on the PCB.
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5 -5
Pin Descriptions
Global I/O Naming Conventions
Gmn (Gxxx) refers to Global I/Os. These Global I/Os are used to connect the input to global networks.
Global networks have high fanout and low skew. The naming convention for Global I/Os is as follows:
G = Global
m = Global pin location associated with each CCC on the device:
–
A (northwest corner)
–
B (northeast corner)
–
C (east middle)
–
D (southeast corner)
–
E (southwest corner)
–
F (west middle)
n = Global input MUX and pin number of the associated Global location m—A0, A1, A2, B0, B1, B2,
C0, C1, or C2.
Global (GL) I/Os have access to certain clock conditioning circuitry (and the PLL) and/or have direct
access to the global network (spines). Additionally, the global I/Os can be used as regular I/Os, since
they have identical capabilities.
Unused GL pins are configured as inputs with pull-up resistors. See more detailed descriptions of global
I/O connectivity in the clocking resources chapter of the SmartFusion FPGA Fabric User’s Guide and the
clock conditioning circuitry chapter of the SmartFusion Microcontroller Subsystem User’s Guide.
All inputs labeled GC/GF are direct inputs into the quadrant clocks. The inputs to the global network are
multiplexed, and only one input can be used as a global input. For example, if GAA0 is used as a
quadrant global input, GAA1 and GAA2 are no longer available for input to the quadrant globals. All
inputs labeled GC/GF are direct inputs into the chip-level globals, and the rest are connected to the
quadrant globals.
User Pins
Name
Type
Polarity/B
us Size
GPIO_x
In/out
32
Description
Microcontroller Subsystem (MSS) General Purpose I/O (GPIO). The MSS GPIO pin
functions as an input, output, tristate, or bidirectional buffer with configurable interrupt
generation and Schmitt trigger support. Input and output signal levels are compatible
with the I/O standard selected.
Unused GPIO pins are tristated and do not include pull-up or pull-down resistors.
During power-up, the used GPIO pins are tristated with no pull-up or pull-down
resistors until Sys boot configures them.
Some of these pins are also multiplexed with integrated peripherals in the MSS (SPI,
I2C, and UART). These pins are located in Bank-2 (GPIO_16 to GPIO_31) for A2F060,
A2F200, and A2F500 devices.
GPIOs can be routed to dedicated I/O buffers (MSSIOBUF) or in some cases to the
FPGA fabric interface through an IOMUX. This allows GPIO pins to be multiplexed as
either I/Os for the FPGA fabric, the ARM® Cortex-M3 or for given integrated MSS
peripherals. The MSS peripherals are not multiplexed with each other; they are
multiplexed only with the GPIO block. For more information, see the General Purpose
I/O Block (GPIO) section in the SmartFusion Microcontroller Subsystem User’s Guide.
IO
5- 6
In/out
FPGA user I/O
R ev isio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
User I/O Naming Conventions
The naming convention used for each FPGA user I/O is Gmn/IOuxwByVz, where:
Gmn is only used for I/Os that also have CCC access—i.e., global pins. Refer to the "Global I/O Naming
Conventions" section on page 5-6.
u = I/O pair number in bank, starting at 00 from the northwest I/O bank and proceeding in a clockwise
direction.
x = P (positive) or N (negative) or S (single-ended) or R (regular, single-ended).
w = D (Differential Pair), P (Pair), or S (Single-Ended). D (Differential Pair) if both members of the pair
are bonded out to adjacent pins or are separated only by one GND or NC pin; P (Pair) if both members of
the pair are bonded out but do not meet the adjacency requirement; or S (Single-Ended) if the I/O pair is
not bonded out. For Differential Pairs (D), adjacency for ball grid packages means only vertical or
horizontal. Diagonal adjacency does not meet the requirements for a true differential pair.
B = Bank
y = Bank number starting at 0 from northwest I/O bank and incrementing clockwise.
V = Reference voltage
z = VREF mini bank number.
The FPGA user I/O pin functions as an input, output, tristate or bidirectional buffer. Input and output
signal levels are compatible with the I/O standard selected. Unused I/O pins are disabled by Libero SoC
software and include a weak pull-up resistor. During power-up, the used I/O pins are tristated with no
pull-up or pull-down resistors until I/O enable (there is a delay after voltage stabilizes, and different I/O
banks power up sequentially to avoid a surge of ICCI).
Unused I/Os are configured as follows:
•
Output buffer is disabled (with tristate value of high impedance)
•
Input buffer is disabled (with tristate value of high impedance)
•
Weak pull-up is programmed
Some of these pins are also multiplexed with integrated peripherals in the MSS (Ethernet MAC and
external memory controller).
Unused MSS I/Os are neither weakly pulled-up nor weakly pulled-down. The Schmitt trigger is disabled.
Essentially, I/Os have the reset values as defined in Table 19-25 IOMUX_n_CR, in the SmartFusion
Microcontroller Subsystem User's Guide.
By default, during programming I/Os become tristated and weakly pulled up to VCCxxxxIOBx. You can
modify the I/O states during programming in FlashPro. For more details, refer to "Specifying I/O States
During Programming" on page 1-3. With the VCCI and VCC supplies continuously powered up, when the
device transitions from programming to operating mode, the I/Os are instantly configured to the desired
user configuration. For more information, see the SmartFusion FPGA User I/Os section in the
SmartFusion FPGA Fabric User’s Guide.
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5 -7
Pin Descriptions
Special Function Pins
Name
Type Polarity/Bus Size
NC
Description
No connect
This pin is not connected to circuitry within the device. These pins can
be driven to any voltage or can be left floating with no effect on the
operation of the device.
DC
Do not connect.
This pin should not be connected to any signals on the PCB. These
pins should be left unconnected.
LPXIN
In
1
Low power 32 KHz crystal oscillator.
Input from the 32 KHz oscillator. Pin for connecting a low power 32
KHz watch crystal. If not used, the LPXIN pin can be left floating. For
more information, see the PLLs, Clock Conditioning Circuitry, and OnChip Crystal Oscillators section in the SmartFusion Microcontroller
Subsystem User’s Guide.
LPXOUT
In
1
Low power 32 KHz crystal oscillator.
Output to the 32 KHz oscillator. Pin for connecting a low power 32 KHz
watch crystal. If not used, the LPXOUT pin can be left floating. For
more information, see the PLLs, Clock Conditioning Circuitry, and OnChip Crystal Oscillators section in the SmartFusion Microcontroller
Subsystem User’s Guide.
MAINXIN
In
1
Main crystal oscillator circuit.
Input to the crystal oscillator circuit. Pin for connecting an external
crystal, ceramic resonator, or RC network. When using an external
crystal or ceramic oscillator, external capacitors are also
recommended. Refer to documentation from the crystal oscillator
manufacturer for proper capacitor value.
If an external RC network or clock input is used, the RC components
are connected to the MAINXIN pin, with MAINXOUT left floating. When
the main crystal oscillator is not being used, MAINXIN and MAINXOUT
pins can be left floating.
For more information, see the PLLs, Clock Conditioning Circuitry, and
On-Chip Crystal Oscillators section in the SmartFusion Microcontroller
Subsystem User’s Guide.
MAINXOUT
Out
1
Main crystal oscillator circuit.
Output from the crystal oscillator circuit. Pin for connecting external
crystal or ceramic resonator. When using an external crystal or ceramic
oscillator, external capacitors are also recommended. Refer to
documentation from the crystal oscillator manufacturer for proper
capacitor value.
If an external RC network or clock input is used, the RC components
are connected to the MAINXIN pin, with MAINXOUT left floating. When
the main crystal oscillator is not being used, MAINXIN and MAINXOUT
pins can be left floating.
For more information, see the PLLs, Clock Conditioning Circuitry, and
On-Chip Crystal Oscillators section in the SmartFusion Microcontroller
Subsystem User’s Guide.
5- 8
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SmartFusion Customizable System-on-Chip (cSoC)
Name
Type Polarity/Bus Size
NCAP
1
Description
Negative capacitor connection.
This is the negative terminal of the charge pump. A capacitor, with a
2.2 µF recommended value, is required to connect between PCAP and
NCAP. Analog charge pump capacitors are not needed if none of the
analog SCB features are used and none of the SDDs are used. In that
case it should be left unconnected.
PCAP
1
Positive Capacitor connection.
This is the positive terminal of the charge pump. A capacitor, with a 2.2
µF recommended value, is required to connect between PCAP and
NCAP. If this pin is not used, it must be left unconnected/floating. In this
case, no capacitor is needed. Analog charge pump capacitors are not
needed if none of the analog SCB features are used, and none of the
SDDs are used.
PTBASE
1
Pass transistor base connection
This is the control signal of the voltage regulator. This pin should be
connected to the base of an external pass transistor used with the
1.5 V internal voltage regulator and can be floating if not used.
PTEM
1
Pass transistor emitter connection.
This is the feedback input of the voltage regulator.
This pin should be connected to the emitter of an external pass
transistor used with the 1.5 V internal voltage regulator and can be
floating if not used.
MSS_RESET_N
PU_N
In
Low
Low Reset signal which can be used as an external reset and can also
be used as a system level reset under control of the Cortex-M3
processor. MSS_RESET_N is an output asserted low after power-on
reset. The direction of MSS_RESET_N changes during the execution
of the Microsemi System Boot when chip-level reset is enabled. The
Microsemi System Boot reconfigures MSS_RESET_N to become a
reset input signal when chip-level reset is enabled. It has an internal
pull-up so it can be left floating. In the current software, the
MSS_RESET_N is modeled as an external input signal only.
Low
Push-button is the connection for the external momentary switch used
to turn on the 1.5 V voltage regulator and can be floating if not used.
R ev i si o n 1 0
5 -9
Pin Descriptions
JTAG Pins
SmartFusion cSoCs have a separate bank for the dedicated JTAG pins. The JTAG pins can be run at any
voltage from 1.5 V to 3.3 V (nominal). VCC must also be powered for the JTAG state machine to operate,
even if the device is in bypass mode; VJTAG alone is insufficient. Both VJTAG and VCC to the
SmartFusion cSoC part must be supplied to allow JTAG signals to transition the SmartFusion cSoC.
Isolating the JTAG power supply in a separate I/O bank gives greater flexibility with supply selection and
simplifies power supply and PCB design. If the JTAG interface is neither used nor planned to be used,
the VJTAG pin together with the TRSTB pin could be tied to GND.
Name
JTAGSEL
Type
Polarity/
Bus Size
In
1
Description
JTAG controller selection
Depending on the state of the JTAGSEL pin, an external JTAG controller will either
see the FPGA fabric TAP/auxiliary TAP (High) or the Cortex-M3 JTAG debug
interface (Low).
The JTAGSEL pin should be connected to an external pull-up resistor such that the
default configuration selects the FPGA fabric TAP.
TCK
In
1
Test clock
Serial input for JTAG boundary scan, ISP, and UJTAG. The TCK pin does not have an
internal pull-up/-down resistor. If JTAG is not used, it is recommended to tie off TCK
to GND or VJTAG through a resistor placed close to the FPGA pin. This prevents
JTAG operation in case TMS enters an undesired state.
Note that to operate at all VJTAG voltages, 500  to 1 k will satisfy the requirements.
Refer to Table 5-1 on page 5-11 for more information.
Can be left floating when unused.
TDI
In
1
Test data
Serial input for JTAG boundary scan, ISP, and UJTAG usage. There is an internal
weak pull-up resistor on the TDI pin.
TDO
Out
1
Test data
Serial output for JTAG boundary scan, ISP, and UJTAG usage.
TMS
In
HIGH
Test mode select
The TMS pin controls the use of the IEEE1532 boundary scan pins (TCK, TDI, TDO,
TRST). There is an internal weak pull-up resistor on the TMS pin.
Can be left floating when unused.
TRSTB
In
HIGH
Boundary scan reset pin
The TRST pin functions as an active low input to asynchronously initialize (or reset)
the boundary scan circuitry. There is an internal weak pull-up resistor on the TRST
pin. If JTAG is not used, an external pull-down resistor could be included to ensure
the TAP is held in reset mode. The resistor values must be chosen from Table 5-1 on
page 5-11 and must satisfy the parallel resistance value requirement. The values in
Table 5-1 on page 5-11 correspond to the resistor recommended when a single
device is used. The values correspond to the equivalent parallel resistor when
multiple devices are connected via a JTAG chain.
In critical applications, an upset in the JTAG circuit could allow entering an undesired
JTAG state. In such cases, it is recommended that you tie off TRST to GND through a
resistor placed close to the FPGA pin.
The TRSTB pin also resets the serial wire JTAG – debug port (SWJ-DP) circuitry
within the Cortex-M3.
Can be left floating when unused.
5- 10
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Table 5-1 • Recommended Tie-Off Values for the TCK and TRST Pins
Tie-Off Resistance1, 2
VJTAG
VJTAG at 3.3 V
200  to 1 k
VJTAG at 2.5 V
200  to 1 k
VJTAG at 1.8 V
500  to 1 k
VJTAG at 1.5 V
500  to 1 k
Notes:
1. The TCK pin can be pulled up/down.
2. The TRST pin can only be pulled down.
1. Equivalent parallel resistance if more than one device is on JTAG chain.
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5- 11
Pin Descriptions
Microcontroller Subsystem (MSS)
Name
Type
Polarity/
Bus Size
Description
External Memory Controller
EMC_ABx
Out
26
External memory controller address bus
Can also be used as an FPGA user I/O (see "IO" on page 5-6).
EMC_BYTENx
Out
LOW/2
External memory controller byte enable
Can also be used as an FPGA user I/O (see "IO" on page 5-6).
EMC_CLK
Out
Rise
External memory controller clock
Can also be used as an FPGA user I/O (see "IO" on page 5-6).
EMC_CSx_N
Out
LOW/2
External memory controller chip selects
Can also be used as an FPGA User IO (see "IO" on page 5-6).
EMC_DBx
In/out
16
External memory controller data bus
Can also be used as an FPGA user I/O (see "IO" on page 5-6).
EMC_OENx_N
Out
LOW/2
External memory controller output enables
Can also be used as an FPGA User IO (see "IO" on page 5-6).
EMC_RW_N
Out
Level
External memory controller read/write. Read = High, write = Low.
Can also be used as an FPGA user I/O (see "IO" on page 5-6).
Inter-Integrated Circuit
I2C_0_SCL
(I2C)
In/out
Peripherals
1
I2C bus serial clock output. First I2C.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
I2C_0_SDA
In/out
1
I2C bus serial data input/output. First I2C.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
I2C_1_SCL
In/out
1
I2C bus serial clock output. Second I2C.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
I2C_1_SDA
In/out
1
I2C bus serial data input/output. Second I2C.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
Serial Peripheral Interface (SPI) Controllers
SPI_0_CLK
Out
1
Clock. First SPI.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
SPI_0_DI
In
1
Data input. First SPI.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
SPI_0_DO
Out
1
Data output. First SPI.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
SPI_0_SS
Out
1
Slave select (chip select). First SPI.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
SPI_1_CLK
Out
1
Clock. Second SPI.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
SPI_1_DI
In
1
Data input. Second SPI.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
5- 12
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Name
SPI_1_DO
Type
Polarity/
Bus Size
Out
1
Description
Data output. Second SPI.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
SPI_1_SS
Out
1
Slave select (chip select). Second SPI.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
Universal Asynchronous Receiver/Transmitter (UART) Peripherals
UART_0_RXD
In
1
Receive data. First UART.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
UART_0_TXD
Out
1
Transmit data. First UART.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
UART_1_RXD
In
1
Receive data. Second UART.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
UART_1_TXD
Out
1
Transmit data. Second UART.
Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6).
Ethernet MAC
MAC_CLK
In
Rise
Receive clock. 50 MHz ± 50 ppm clock source received from RMII PHY.
Can be left floating when unused.
MAC_CRSDV
In
High
Carrier sense/receive data valid for RMII PHY
Can also be used as an FPGA User IO (see "IO" on page 5-6).
MAC_MDC
Out
Rise
RMII management clock
Can also be used as an FPGA User IO (see "IO" on page 5-6).
MAC_MDIO
In/Out
1
RMII management data input/output
Can also be used as an FPGA User IO (see "IO" on page 5-6).
MAC_RXDx
In
2
Ethernet MAC receive data. Data recovered and decoded by PHY. The
RXD[0] signal is the least significant bit.
Can also be used as an FPGA User I/O (see "IO" on page 5-6).
MAC_RXER
In
HIGH
Ethernet MAC receive error. If MACRX_ER is asserted during reception,
the frame is received and status of the frame is updated with
MACRX_ER.
Can also be used as an FPGA user I/O (see "IO" on page 5-6).
MAC_TXDx
Out
2
Ethernet MAC transmit data. The TXD[0] signal is the least significant
bit.
Can also be used as an FPGA user I/O (see "IO" on page 5-6).
MAC_TXEN
Out
HIGH
Ethernet MAC transmit enable. When asserted, indicates valid data for
the PHY on the TXD port.
Can also be used as an FPGA User I/O (see "IO" on page 5-6).
R ev i si o n 1 0
5- 13
Pin Descriptions
Analog Front-End (AFE)
Associated With
Name
Type
ABPS0
In
Description
SCB 0 / active bipolar prescaler input 1.
ADC/SDD
SCB
ADC0
SCB0
See the Active Bipolar Prescaler (ABPS) section in the SmartFusion
Programmable Analog User’s Guide.
ABPS1
In
SCB 0 / active bipolar prescaler Input 2
ADC0
SCB0
ABPS2
In
SCB 1 / active bipolar prescaler Input 1
ADC0
SCB1
ABPS3
In
SCB 1 / active bipolar prescaler Input 2
ADC0
SCB1
ABPS4
In
SCB 2 / active bipolar prescaler Input 1
ADC1
SCB2
ABPS5
In
SCB 2 / active bipolar prescaler Input 2
ADC1
SCB2
ABPS6
In
SCB 3 / active bipolar prescaler Input 1
ADC1
SCB3
ABPS7
In
SCB 3 / active bipolar prescaler input 2
ADC1
SCB3
ABPS8
In
SCB 4 / active bipolar prescaler input 1
ADC2
SCB4
ABPS9
In
SCB 4 / active bipolar prescaler input 2
ADC2
SCB4
ADC0
In
ADC 0 direct input 0 / FPGA Input.
ADC0
SCB0
See the "Sigma-Delta Digital-to-Analog Converter (DAC)" section in
the SmartFusion Programmable Analog User’s Guide.
ADC1
In
ADC 0 direct input 1 / FPGA input
ADC0
SCB0
ADC2
In
ADC 0 direct input 2 / FPGA input
ADC0
SCB1
ADC3
In
ADC 0 direct input 3 / FPGA input
ADC0
SCB1
ADC4
In
ADC 1 direct input 0 / FPGA input
ADC1
SCB2
ADC5
In
ADC 1 direct input 1 / FPGA input
ADC1
SCB2
ADC6
In
ADC 1 direct input 2 / FPGA input
ADC1
SCB3
ADC7
In
ADC 1 direct input 3 / FPGA input
ADC1
SCB3
ADC8
In
ADC 2 direct input 0 / FPGA input
ADC2
SCB4
ADC9
In
ADC 2 direct input 1 / FPGA input
ADC2
SCB4
ADC10
In
ADC 2 direct input 2 / FPGA input
ADC2
N/A
ADC11
In
ADC 2 direct input 3 / FPGA input
ADC2
N/A
CM0
In
SCB 0 / high side of current monitor / comparator
ADC0
SCB0
Positive input. See the Current Monitor section in the SmartFusion
Programmable Analog User’s Guide.
CM1
In
SCB 1 / high side of current monitor / comparator. Positive input.
ADC0
SCB1
CM2
In
SCB 2 / high side of current monitor / comparator. Positive input.
ADC1
SCB2
CM3
In
SCB 3 / high side of current monitor / comparator. Positive input.
ADC1
SCB3
CM4
In
SCB 4 / high side of current monitor / comparator. Positive input.
ADC2
SCB4
Note: Unused analog inputs should be grounded. This aids in shielding and prevents an undesired coupling path.
5- 14
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Associated With
Name
TM0
Type
In
Description
SCB 0 / low side of current monitor / comparator
ADC/SDD
SCB
ADC0
SCB0
Negative input / high side of temperature monitor. See the
Temperature Monitor section.
TM1
In
SCB 1 / low side of current monitor / comparator. Negative input /
high side of temperature monitor.
ADC0
SCB1
TM2
In
SCB 2 / low side of current monitor / comparator. Negative input /
high side of temperature monitor.
ADC1
SCB2
TM3
In
SCB 3 low side of current monitor / comparator. Negative input / high
side of temperature monitor.
ADC1
SCB3
TM4
In
SCB 4 low side of current monitor / comparator. Negative input / high
side of temperature monitor.
ADC2
SCB4
Output of SDD0
SDD0
N/A
SDD0
Out
See the Sigma-Delta Digital-to-Analog Converter (DAC) section in
the SmartFusion Programmable Analog User’s Guide.
SDD1
Out
Output of SDD1
SDD1
N/A
SDD2
Out
Output of SDD2
SDD2
N/A
Note: Unused analog inputs should be grounded. This aids in shielding and prevents an undesired coupling path.
R ev i si o n 1 0
5- 15
Pin Descriptions
Analog Front-End Pin-Level Function Multiplexing
Table 5-2 describes the relationships between the various internal signals found in the analog front-end
(AFE) and how they are multiplexed onto the external package pins. Note that, in general, only one
function is available for those pads that have numerous functions listed. The exclusion to this rule is
when a comparator is used; the ADC can still convert either input side of the comparator.
Table 5-2 • Relationships Between Signals in the Analog Front-End
ADC
Channel
Dir.-In
Current
Option Prescaler
Mon.
ABPS0
ADC0_CH1
ABPS0_IN
ABPS1
ADC0_CH2
ABPS1_IN
ABPS2
ADC0_CH5
ABPS2_IN
ABPS3
ADC0_CH6
ABPS3_IN
ABPS4
ADC1_CH1
ABPS4_IN
ABPS5
ADC1_CH2
ABPS5_IN
ABPS6
ADC1_CH5
ABPS6_IN
ABPS7
ADC1_CH6
ABPS7_IN
ABPS8
ADC2_CH1
ABPS8_IN
ABPS9
ADC2_CH2
ABPS9_IN
ADC0
ADC0_CH9
ADC1
ADC0_CH10
Pin
Temp.
Mon.
Compar.
LVTTL
SDD MUX
Yes
CMP1_P
LVTTL0_IN
Yes
CMP1_N
LVTTL1_IN SDDM0_OUT
ADC2
ADC0_CH11
Yes
CMP3_P
LVTTL2_IN
ADC3
ADC0_CH12
Yes
CMP3_N
LVTTL3_IN SDDM1_OUT
ADC4
ADC1_CH9
Yes
CMP5_P
LVTTL4_IN
ADC5
ADC1_CH10
Yes
CMP5_N
LVTTL5_IN SDDM2_OUT
ADC6
ADC1_CH11
Yes
CMP7_P
LVTTL6_IN
ADC7
ADC1_CH12
Yes
CMP7_N
LVTTL7_IN SDDM3_OUT
ADC8
ADC2_CH9
Yes
CMP9_P
LVTTL8_IN
ADC9
ADC2_CH10
Yes
CMP9_N
LVTTL9_IN SDDM4_OUT
SDD
ADC10 ADC2_CH11
Yes
LVTTL10_IN
ADC11 ADC2_CH12
Yes
LVTTL11_IN
CM0
ADC0_CH3
Yes
CM0_H
CMP0_P
CM1
ADC0_CH7
Yes
CM1_H
CMP2_P
CM2
ADC1_CH3
Yes
CM2_H
CMP4_P
CM3
ADC1_CH7
Yes
CM3_H
CMP6_P
CM4
ADC2_CH3
Yes
CM4_H
CMP8_P
SDD0
ADC0_CH15
SDD0_OUT
SDD1
ADC1_CH15
SDD1_OUT
Notes:
1.
2.
3.
4.
5.
6.
7.
ABPSx_IN: Input to active bipolar prescaler channel x.
CMx_H/L: Current monitor channel x, high/low side.
TMx_IO: Temperature monitor channel x.
CMPx_P/N: Comparator channel x, positive/negative input.
LVTTLx_IN: LVTTL I/O channel x.
SDDMx_OUT: Output from sigma-delta DAC MUX channel x.
SDDx_OUT: Direct output from sigma-delta DAC channel x.
5- 16
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Table 5-2 • Relationships Between Signals in the Analog Front-End
ADC
Channel
Pin
Dir.-In
Current
Option Prescaler
Mon.
Temp.
Mon.
Compar.
SDD2
ADC2_CH15
TM0
ADC0_CH4
Yes
CM0_L
TM0_IO
CMP0_N
TM1
ADC0_CH8
Yes
CM1_L
TM1_IO
CMP2_N
TM2
ADC1_CH4
Yes
CM2_L
TM2_IO
CMP4_N
TM3
ADC1_CH8
Yes
CM3_L
TM3_IO
CMP6_N
TM4
ADC2_CH4
Yes
CM4_L
TM4_IO
CMP8_N
LVTTL
SDD MUX
SDD
SDD2_OUT
Notes:
1.
2.
3.
4.
5.
6.
7.
ABPSx_IN: Input to active bipolar prescaler channel x.
CMx_H/L: Current monitor channel x, high/low side.
TMx_IO: Temperature monitor channel x.
CMPx_P/N: Comparator channel x, positive/negative input.
LVTTLx_IN: LVTTL I/O channel x.
SDDMx_OUT: Output from sigma-delta DAC MUX channel x.
SDDx_OUT: Direct output from sigma-delta DAC channel x.
R ev i si o n 1 0
5- 17
Pin Descriptions
Pin Assignment Tables
TQ144
144
1
144-Pin
TQFP
Note
For Package Manufacturing and Environmental
information, visit the Resource Center at
http://www.microsemi.com/soc/products/solutions/
package/docs.aspx.
5- 18
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
TQ144
TQ144
Pin Number
A2F060 Function
Pin Number
A2F060 Function
1
VCCPLL0
37
VCC33AP
2
VCOMPLA0
38
VCC33N
3
GNDQ
39
SDD0
4
GFA2/IO42PDB5V0
40
GNDA
5
GFB2/IO42NDB5V0
41
GNDAQ
6
GFC2/IO41PDB5V0
42
GNDAQ
7
IO41NDB5V0
43
ADC0
8
VCC
44
ADC1
9
GND
45
ADC2
10
VCCFPGAIOB5
46
ADC3
11
IO38PDB5V0
47
ADC4
12
IO38NDB5V0
48
ADC5
13
IO36PDB5V0
49
ADC6
14
IO36NDB5V0
50
ADC7
15
GND
51
ADC8
16
GNDRCOSC
52
ADC9
17
VCCRCOSC
53
ADC10
18
MSS_RESET_N
54
NC
19
GPIO_0/IO33RSB4V0
55
NC
20
GPIO_1/IO32RSB4V0
56
NC
21
GPIO_2/IO31RSB4V0
57
GND15ADC0
22
GPIO_3/IO30RSB4V0
58
VCC15ADC0
23
GPIO_4/IO29RSB4V0
59
GND33ADC0
24
GND
60
VCC33ADC0
25
VCCMSSIOB4
61
GND33ADC0
26
VCC
62
VAREF0
27
GPIO_5/IO28RSB4V0
63
ABPS0
28
GPIO_6/IO27RSB4V0
64
ABPS1
29
GPIO_7/IO26RSB4V0
65
CM0
30
GPIO_8/IO25RSB4V0
66
TM0
31
VCCESRAM
67
GNDTM0
32
GNDSDD0
68
GNDAQ
33
VCC33SDD0
69
GNDA
34
VCC15A
70
GNDVAREF
35
PCAP
71
VAREFOUT
36
NCAP
72
PU_N
R ev i si o n 1 0
5- 19
Pin Descriptions
TQ144
5- 20
Pin Number
A2F060 Function
73
VCC33A
74
PTEM
75
PTBASE
76
SPI_0_DO/GPIO_16
77
SPI_0_DI/GPIO_17
78
SPI_0_CLK/GPIO_18
79
SPI_0_SS/GPIO_19
80
UART_0_RXD/GPIO_21
81
UART_0_TXD/GPIO_20
82
UART_1_RXD/GPIO_29
83
UART_1_TXD/GPIO_28
84
VCC
85
VCCMSSIOB2
86
GND
87
I2C_1_SDA/GPIO_30
88
I2C_1_SCL/GPIO_31
89
I2C_0_SDA/GPIO_22
90
I2C_0_SCL/GPIO_23
91
GNDENVM
92
VCCENVM
93
JTAGSEL
94
TCK
95
TDI
96
TMS
97
TDO
98
TRSTB
99
VJTAG
100
VDDBAT
101
VCCLPXTAL
102
LPXOUT
103
LPXIN
104
GNDLPXTAL
105
GNDMAINXTAL
106
MAINXOUT
107
MAINXIN
108
VCCMAINXTAL
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
TQ144
Pin Number
A2F060 Function
109
VPP
110
GNDQ
111
GCA1/IO20PDB0V0
112
GCA0/IO20NDB0V0
113
GCB1/IO19PDB0V0
114
GCB0/IO19NDB0V0
115
GCC1/IO18PDB0V0
116
GCC0/IO18NDB0V0
117
VCCFPGAIOB0
118
GND
119
VCC
120
IO14PDB0V0
121
IO14NDB0V0
122
IO13NSB0V0
123
IO11PDB0V0
124
IO11NDB0V0
125
IO09PDB0V0
126
IO09NDB0V0
127
VCCFPGAIOB0
128
GND
129
IO07PDB0V0
130
IO07NDB0V0
131
IO06PDB0V0
132
IO06NDB0V0
133
IO05PDB0V0
134
IO05NDB0V0
135
IO03PDB0V0
136
IO03NDB0V0
137
VCCFPGAIOB0
138
GND
139
VCC
140
IO01PDB0V0
141
IO01NDB0V0
142
IO00PDB0V0
143
IO00NDB0V0
144
GNDQ
R ev i si o n 1 0
5- 21
Pin Descriptions
CS288
A1 Ball Pad Corner
21 20 19 18 17 16 15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
Y
AA
Note: Bottom view
Note
For Package Manufacturing and Environmental information, visit the Resource Center at
http://www.microsemi.com/soc/products/solutions/package/docs.aspx.
5- 22
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
CS288
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
A1
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
A2
GNDQ
GNDQ
GNDQ
A3
EMC_CLK/IO00NDB0V0
EMC_CLK/GAA0/IO00NDB0V0
EMC_CLK/GAA0/IO02NDB0V0
A4
EMC_RW_N/IO00PDB0V0
EMC_RW_N/GAA1/IO00PDB0V0
EMC_RW_N/GAA1/IO02PDB0V0
A5
GND
GND
GND
A6
EMC_CS1_N/IO01PDB0V0
EMC_CS1_N/GAB1/IO01PDB0V0
EMC_CS1_N/GAB1/IO05PDB0V0
A7
EMC_CS0_N/IO01NDB0V0
EMC_CS0_N/GAB0/IO01NDB0V0
EMC_CS0_N/GAB0/IO05NDB0V0
A8
EMC_AB[0]/IO04NPB0V0
EMC_AB[0]/IO04NPB0V0
EMC_AB[0]/IO06NPB0V0
A9
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
A10
EMC_AB[4]/IO06NDB0V0
EMC_AB[4]/IO06NDB0V0
EMC_AB[4]/IO10NDB0V0
A11
EMC_AB[8]/IO08NPB0V0
EMC_AB[8]/IO08NPB0V0
EMC_AB[8]/IO13NPB0V0
A12
EMC_AB[14]/IO11NPB0V0
EMC_AB[14]/IO11NPB0V0
EMC_AB[14]/IO15NPB0V0
A13
GND
GND
GND
A14
EMC_AB[18]/IO13NDB0V0
EMC_AB[18]/IO13NDB0V0
EMC_AB[18]/IO18NDB0V0
A15
EMC_AB[24]/IO16NDB0V0
EMC_AB[24]/IO16NDB0V0
EMC_AB[24]/IO20NDB0V0
A16
EMC_AB[25]/IO16PDB0V0
EMC_AB[25]/IO16PDB0V0
EMC_AB[25]/IO20PDB0V0
A17
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
A18
EMC_AB[20]/IO14NDB0V0
EMC_AB[20]/IO14NDB0V0
EMC_AB[20]/IO21NDB0V0
A19
EMC_AB[21]/IO14PDB0V0
EMC_AB[21]/IO14PDB0V0
EMC_AB[21]/IO21PDB0V0
A20
GNDQ
GNDQ
GNDQ
A21
GND
GND
GND
AA1
ADC1
ABPS1
ABPS1
AA2
GNDAQ
GNDAQ
GNDAQ
AA3
GNDA
GNDA
GNDA
AA4
VCC33N
VCC33N
VCC33N
AA5
SDD0
SDD0
SDD0
AA6
ADC0
ABPS0
ABPS0
AA7
NC
GNDTM0
GNDTM0
AA8
NC
ABPS2
ABPS2
AA9
NC
VAREF0
VAREF0
AA10
NC
GND15ADC0
GND15ADC0
AA11
ADC9
ADC6
ADC6
AA12
ABPS1
ABPS7
ABPS7
AA13
ADC6
TM2
TM2
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
R ev i si o n 1 0
5- 23
Pin Descriptions
CS288
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
AA14
NC
ABPS4
ABPS4
AA15
NC
SDD1
SDD1
AA16
GNDVAREF
GNDVAREF
GNDVAREF
AA17
VAREFOUT
VAREFOUT
VAREFOUT
AA18
PU_N
PU_N
PU_N
AA19
VCC33A
VCC33A
VCC33A
AA20
PTEM
PTEM
PTEM
AA21
GND
GND
GND
B1
GND
GND
GND
B21
IO17PDB0V0
GBB2/IO20NDB1V0
GBB2/IO27NDB1V0
C1
EMC_DB[15]/IO45PDB5V0
EMC_DB[15]/GAA2/IO71PDB5V0
EMC_DB[15]/GAA2/IO88PDB5V0
C3
VCOMPLA0
VCOMPLA
VCOMPLA0
C4
VCCPLL0
VCCPLL
VCCPLL0
C5
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
C6
EMC_AB[1]/IO04PPB0V0
EMC_AB[1]/IO04PPB0V0
EMC_AB[1]/IO06PPB0V0
C7
GND
GND
GND
C8
EMC_OEN0_N/IO03NDB0V0
EMC_OEN0_N/IO03NDB0V0
EMC_OEN0_N/IO08NDB0V0
C9
EMC_AB[2]/IO05NDB0V0
EMC_AB[2]/IO05NDB0V0
EMC_AB[2]/IO09NDB0V0
C10
EMC_AB[5]/IO06PDB0V0
EMC_AB[5]/IO06PDB0V0
EMC_AB[5]/IO10PDB0V0
C11
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
C12
EMC_AB[9]/IO08PPB0V0
EMC_AB[9]/IO08PPB0V0
EMC_AB[9]/IO13PPB0V0
C13
EMC_AB[15]/IO11PPB0V0
EMC_AB[15]/IO11PPB0V0
EMC_AB[15]/IO15PPB0V0
C14
EMC_AB[19]/IO13PDB0V0
EMC_AB[19]/IO13PDB0V0
EMC_AB[19]/IO18PDB0V0
C15
GND
GND
GND
C16
EMC_AB[22]/IO15NDB0V0
EMC_AB[22]/IO15NDB0V0
EMC_AB[22]/IO19NDB0V0
C17
EMC_AB[23]/IO15PDB0V0
EMC_AB[23]/IO15PDB0V0
EMC_AB[23]/IO19PDB0V0
C18
NC
NC
VCCPLL1
C19
NC
NC
VCOMPLA1
C21
IO17NDB0V0
GBA2/IO20PDB1V0
GBA2/IO27PDB1V0
D1
EMC_DB[14]/IO45NDB5V0
EMC_DB[14]/GAB2/IO71NDB5V0
EMC_DB[14]/GAB2/IO88NDB5V0
D3
VCCFPGAIOB5
VCCFPGAIOB5
VCCFPGAIOB5
D19
GND
GND
GND
D21
VCCFPGAIOB1
VCCFPGAIOB1
VCCFPGAIOB1
E1
EMC_DB[13]/IO44PDB5V0
EMC_DB[13]/GAC2/IO70PDB5V0
EMC_DB[13]/GAC2/IO87PDB5V0
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
5- 24
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
CS288
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
E3
EMC_DB[12]/IO44NDB5V0
EMC_DB[12]/IO70NDB5V0
EMC_DB[12]/IO87NDB5V0
E5
GNDQ
GNDQ
GNDQ
E6
EMC_BYTEN[0]/IO02NDB0V0 EMC_BYTEN[0]/GAC0/IO02NDB0V0 EMC_BYTEN[0]/GAC0/IO07NDB0V0
E7
EMC_BYTEN[1]/IO02PDB0V0
E8
EMC_OEN1_N/IO03PDB0V0
EMC_OEN1_N/IO03PDB0V0
EMC_OEN1_N/IO08PDB0V0
E9
EMC_AB[3]/IO05PDB0V0
EMC_AB[3]/IO05PDB0V0
EMC_AB[3]/IO09PDB0V0
E10
EMC_AB[10]/IO09NDB0V0
EMC_AB[10]/IO09NDB0V0
EMC_AB[10]/IO11NDB0V0
E11
EMC_AB[7]/IO07PDB0V0
EMC_AB[7]/IO07PDB0V0
EMC_AB[7]/IO12PDB0V0
E12
EMC_AB[13]/IO10PDB0V0
EMC_AB[13]/IO10PDB0V0
EMC_AB[13]/IO14PDB0V0
E13
EMC_AB[16]/IO12NDB0V0
EMC_AB[16]/IO12NDB0V0
EMC_AB[16]/IO17NDB0V0
E14
EMC_AB[17]/IO12PDB0V0
EMC_AB[17]/IO12PDB0V0
EMC_AB[17]/IO17PDB0V0
E15
GCC0/IO18NPB0V0
GCB0/IO27NDB1V0
GCB0/IO34NDB1V0
E16
GCA1/IO20PPB0V0
GCB1/IO27PDB1V0
GCB1/IO34PDB1V0
E17
GCC1/IO18PPB0V0
GCB2/IO24PDB1V0
GCB2/IO33PDB1V0
E19
GCB2/IO22PPB1V0
GCA0/IO28NDB1V0
GCA0/IO36NDB1V0
E21
IO21NDB1V0
GCA1/IO28PDB1V0
GCA1/IO36PDB1V0
F1
VCCFPGAIOB5
VCCFPGAIOB5
VCCFPGAIOB5
F3
GFB2/IO42NDB5V0
GFB2/IO68NDB5V0
GFB2/IO85NDB5V0
F5
GFA2/IO42PDB5V0
GFA2/IO68PDB5V0
GFA2/IO85PDB5V0
F6
EMC_DB[11]/IO43PDB5V0
EMC_DB[11]/IO69PDB5V0
EMC_DB[11]/IO86PDB5V0
F7
GND
GND
GND
F8
NC
GFC1/IO66PPB5V0
GFC1/IO83PPB5V0
F9
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
F10
EMC_AB[11]/IO09PDB0V0
EMC_AB[11]/IO09PDB0V0
EMC_AB[11]/IO11PDB0V0
F11
EMC_AB[6]/IO07NDB0V0
EMC_AB[6]/IO07NDB0V0
EMC_AB[6]/IO12NDB0V0
F12
EMC_AB[12]/IO10NDB0V0
EMC_AB[12]/IO10NDB0V0
EMC_AB[12]/IO14NDB0V0
F13
GND
GND
GND
F14
GCB1/IO19PPB0V0
GCC1/IO26PPB1V0
GCC1/IO35PPB1V0
F15
GNDQ
GNDQ
GNDQ
F16
VCCFPGAIOB1
VCCFPGAIOB1
VCCFPGAIOB1
F17
GCB0/IO19NPB0V0
IO24NDB1V0
IO33NDB1V0
F19
IO23NDB1V0
GDB1/IO30PDB1V0
GDB1/IO39PDB1V0
F21
GCA2/IO21PDB1V0
GDB0/IO30NDB1V0
GDB0/IO39NDB1V0
G1
IO41NDB5V0
IO67NDB5V0
IO84NDB5V0
EMC_BYTEN[1]/GAC1/IO02PDB0V0 EMC_BYTEN[1]/GAC1/IO07PDB0V0
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
R ev i si o n 1 0
5- 25
Pin Descriptions
CS288
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
G3
GFC2/IO41PDB5V0
GFC2/IO67PDB5V0
GFC2/IO84PDB5V0
G5
NC
GFB1/IO65PDB5V0
GFB1/IO82PDB5V0
G6
EMC_DB[10]/IO43NDB5V0
EMC_DB[10]/IO69NDB5V0
EMC_DB[10]/IO86NDB5V0
G9
NC
GFC0/IO66NPB5V0
GFC0/IO83NPB5V0
G13
GCA0/IO20NPB0V0
GCC0/IO26NPB1V0
GCC0/IO35NPB1V0
G16
NC
GDA0/IO31NDB1V0
GDA0/IO40NDB1V0
G17
IO22NPB1V0
GDC1/IO29PDB1V0
GDC1/IO38PDB1V0
G19
GCC2/IO23PDB1V0
GDC0/IO29NDB1V0
GDC0/IO38NDB1V0
G21
GND
GND
GND
H1
EMC_DB[9]/IO40PPB5V0
EMC_DB[9]/GEC1/IO63PPB5V0
EMC_DB[9]/GEC1/IO80PPB5V0
H3
GND
GND
GND
H5
NC
GFB0/IO65NDB5V0
GFB0/IO82NDB5V0
H6
EMC_DB[7]/IO39PDB5V0
EMC_DB[7]/GEB1/IO62PDB5V0
EMC_DB[7]/GEB1/IO79PDB5V0
H8
GND
GND
GND
H9
VCC
VCC
VCC
H10
GND
GND
GND
H11
VCC
VCC
VCC
H12
GND
GND
GND
H13
VCC
VCC
VCC
H14
GND
GND
GND
H16
NC
GDA1/IO31PDB1V0
GDA1/IO40PDB1V0
H17
NC
GDC2/IO32PPB1V0
GDC2/IO41PPB1V0
H19
VCCFPGAIOB1
VCCFPGAIOB1
VCCFPGAIOB1
H21
NC
GDB2/IO33PDB1V0
GDB2/IO42PDB1V0
J1
EMC_DB[4]/IO38NPB5V0
EMC_DB[4]/GEA0/IO61NPB5V0
EMC_DB[4]/GEA0/IO78NPB5V0
J3
EMC_DB[8]/IO40NPB5V0
EMC_DB[8]/GEC0/IO63NPB5V0
EMC_DB[8]/GEC0/IO80NPB5V0
J5
EMC_DB[1]/IO36PDB5V0
EMC_DB[1]/GEB2/IO59PDB5V0
EMC_DB[1]/GEB2/IO76PDB5V0
J6
EMC_DB[6]/IO39NDB5V0
EMC_DB[6]/GEB0/IO62NDB5V0
EMC_DB[6]/GEB0/IO79NDB5V0
J7
VCCFPGAIOB5
VCCFPGAIOB5
VCCFPGAIOB5
J8
VCC
VCC
VCC
J9
GND
GND
GND
J10
VCC
VCC
VCC
J11
GND
GND
GND
J12
VCC
VCC
VCC
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
5- 26
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
CS288
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
J13
GND
GND
GND
J14
VCC
VCC
VCC
J15
VPP
VPP
VPP
J16
NC
IO32NPB1V0
IO41NPB1V0
J17
NC
GNDQ
GNDQ
J19
VCCMAINXTAL
VCCMAINXTAL
VCCMAINXTAL
J21
NC
GDA2/IO33NDB1V0
GDA2/IO42NDB1V0
K1
GND
GND
GND
K3
EMC_DB[5]/IO38PPB5V0
EMC_DB[5]/GEA1/IO61PPB5V0
EMC_DB[5]/GEA1/IO78PPB5V0
K5
EMC_DB[0]/IO36NDB5V0
EMC_DB[0]/GEA2/IO59NDB5V0
EMC_DB[0]/GEA2/IO76NDB5V0
K6
EMC_DB[3]/IO37PPB5V0
EMC_DB[3]/GEC2/IO60PPB5V0
EMC_DB[3]/GEC2/IO77PPB5V0
K8
GND
GND
GND
K9
VCC
VCC
VCC
K10
GND
GND
GND
K11
VCC
VCC
VCC
K12
GND
GND
GND
K13
VCC
VCC
VCC
K14
GND
GND
GND
K16
LPXOUT
LPXOUT
LPXOUT
K17
GNDLPXTAL
GNDLPXTAL
GNDLPXTAL
K19
GNDMAINXTAL
GNDMAINXTAL
GNDMAINXTAL
K21
MAINXIN
MAINXIN
MAINXIN
L1
GNDRCOSC
GNDRCOSC
GNDRCOSC
L3
VCCFPGAIOB5
VCCFPGAIOB5
VCCFPGAIOB5
L5
EMC_DB[2]/IO37NPB5V0
EMC_DB[2]/IO60NPB5V0
EMC_DB[2]/IO77NPB5V0
L6
NC
GNDQ
GNDQ
L8
VCC
VCC
VCC
L9
GND
GND
GND
L10
VCC
VCC
VCC
L12
VCC
VCC
VCC
L13
GND
GND
GND
L14
VCC
VCC
VCC
L16
VCCLPXTAL
VCCLPXTAL
VCCLPXTAL
L17
VDDBAT
VDDBAT
VDDBAT
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
R ev i si o n 1 0
5- 27
Pin Descriptions
CS288
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
L19
LPXIN
LPXIN
LPXIN
L21
MAINXOUT
MAINXOUT
MAINXOUT
M1
VCCRCOSC
VCCRCOSC
VCCRCOSC
M3
MSS_RESET_N
MSS_RESET_N
MSS_RESET_N
M5
GPIO_5/IO28RSB4V0
GPIO_5/IO42RSB4V0
GPIO_5/IO51RSB4V0
M6
GND
GND
GND
M8
GND
GND
GND
M9
VCC
VCC
VCC
M10
GND
GND
GND
M11
VCC
VCC
VCC
M12
GND
GND
GND
M13
VCC
VCC
VCC
M14
GND
GND
GND
M16
TMS
TMS
TMS
M17
VJTAG
VJTAG
VJTAG
M19
TDO
TDO
TDO
M21
TRSTB
TRSTB
TRSTB
N1
VCCMSSIOB4
VCCMSSIOB4
VCCMSSIOB4
N3
GND
GND
GND
N5
GPIO_4/IO29RSB4V0
GPIO_4/IO43RSB4V0
GPIO_4/IO52RSB4V0
N6
GPIO_8/IO25RSB4V0
GPIO_8/IO39RSB4V0
GPIO_8/IO48RSB4V0
N7
GPIO_9/IO24RSB4V0
GPIO_9/IO38RSB4V0
GPIO_9/IO47RSB4V0
N8
VCC
VCC
VCC
N9
GND
GND
GND
N10
VCC
VCC
VCC
N11
GND
GND
GND
N12
VCC
VCC
VCC
N13
GND
GND
GND
N14
VCC
VCC
VCC
N15
GND
GND
GND
N16
TCK
TCK
TCK
N17
TDI
TDI
TDI
N19
GNDENVM
GNDENVM
GNDENVM
N21
VCCENVM
VCCENVM
VCCENVM
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
5- 28
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
CS288
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
P1
GPIO_0/IO33RSB4V0
MAC_MDC/IO48RSB4V0
MAC_MDC/IO57RSB4V0
P3
GPIO_7/IO26RSB4V0
GPIO_7/IO40RSB4V0
GPIO_7/IO49RSB4V0
P5
GPIO_6/IO27RSB4V0
GPIO_6/IO41RSB4V0
GPIO_6/IO50RSB4V0
P6
VCCMSSIOB4
VCCMSSIOB4
VCCMSSIOB4
P8
GND
GND
GND
P9
VCC
VCC
VCC
P10
GND
GND
GND
P11
VCC
VCC
VCC
P12
GND
GND
GND
P13
VCC
VCC
VCC
P14
GND
GND
GND
P16
JTAGSEL
JTAGSEL
JTAGSEL
P17
I2C_0_SCL/GPIO_23
I2C_0_SCL/GPIO_23
I2C_0_SCL/GPIO_23
P19
VCCMSSIOB2
VCCMSSIOB2
VCCMSSIOB2
P21
GND
GND
GND
R1
GPIO_2/IO31RSB4V0
MAC_MDIO/IO49RSB4V0
MAC_MDIO/IO58RSB4V0
R3
GPIO_1/IO32RSB4V0
MAC_TXEN/IO52RSB4V0
MAC_TXEN/IO61RSB4V0
R5
GPIO_3/IO30RSB4V0
MAC_TXD[0]/IO56RSB4V0
MAC_TXD[0]/IO65RSB4V0
R6
GPIO_10/IO35RSB4V0
MAC_CRSDV/IO51RSB4V0
MAC_CRSDV/IO60RSB4V0
R9
GNDA
GNDA
GNDA
R13
GNDA
GNDA
GNDA
R16
UART_1_RXD/GPIO_29
UART_1_RXD/GPIO_29
UART_1_RXD/GPIO_29
R17
UART_1_TXD/GPIO_28
UART_1_TXD/GPIO_28
UART_1_TXD/GPIO_28
R19
I2C_0_SDA/GPIO_22
I2C_0_SDA/GPIO_22
I2C_0_SDA/GPIO_22
R21
I2C_1_SDA/GPIO_30
I2C_1_SDA/GPIO_30
I2C_1_SDA/GPIO_30
T1
GND
GND
GND
T3
NC
MAC_TXD[1]/IO55RSB4V0
MAC_TXD[1]/IO64RSB4V0
T5
NC
MAC_RXD[1]/IO53RSB4V0
MAC_RXD[1]/IO62RSB4V0
T6
GPIO_11/IO34RSB4V0
MAC_RXER/IO50RSB4V0
MAC_RXER/IO59RSB4V0
T7
NC
CM1
CM1
T8
NC
ADC1
ADC1
T9
NC
GND33ADC0
GND33ADC0
T10
NC
VCC15ADC0
VCC15ADC0
T11
GND33ADC0
GND33ADC1
GND33ADC1
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
R ev i si o n 1 0
5- 29
Pin Descriptions
CS288
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
T12
VAREF0
VAREF1
VAREF1
T13
ADC7
ADC4
ADC4
T14
TM0
TM3
TM3
T15
SPI_1_SS/GPIO_27
SPI_1_SS/GPIO_27
SPI_1_SS/GPIO_27
T16
VCCMSSIOB2
VCCMSSIOB2
VCCMSSIOB2
T17
UART_0_RXD/GPIO_21
UART_0_RXD/GPIO_21
UART_0_RXD/GPIO_21
T19
UART_0_TXD/GPIO_20
UART_0_TXD/GPIO_20
UART_0_TXD/GPIO_20
T21
I2C_1_SCL/GPIO_31
I2C_1_SCL/GPIO_31
I2C_1_SCL/GPIO_31
U1
NC
MAC_RXD[0]/IO54RSB4V0
MAC_RXD[0]/IO63RSB4V0
U3
VCCMSSIOB4
VCCMSSIOB4
VCCMSSIOB4
U5
VCC33SDD0
VCC33SDD0
VCC33SDD0
U6
VCC15A
VCC15A
VCC15A
U7
NC
ABPS3
ABPS3
U8
NC
ADC2
ADC2
U9
NC
VCC33ADC0
VCC33ADC0
U10
GND15ADC0
GND15ADC1
GND15ADC1
U11
VCC33ADC0
VCC33ADC1
VCC33ADC1
U12
ADC10
ADC7
ADC7
U13
ABPS0
ABPS6
ABPS6
U14
GNDTM0
GNDTM1
GNDTM1
U15
SPI_1_CLK/GPIO_26
SPI_1_CLK/GPIO_26
SPI_1_CLK/GPIO_26
U16
SPI_0_CLK/GPIO_18
SPI_0_CLK/GPIO_18
SPI_0_CLK/GPIO_18
U17
SPI_0_SS/GPIO_19
SPI_0_SS/GPIO_19
SPI_0_SS/GPIO_19
U19
GND
GND
GND
U21
SPI_1_DO/GPIO_24
SPI_1_DO/GPIO_24
SPI_1_DO/GPIO_24
V1
NC
MAC_CLK
MAC_CLK
V3
GNDSDD0
GNDSDD0
GNDSDD0
V19
SPI_1_DI/GPIO_25
SPI_1_DI/GPIO_25
SPI_1_DI/GPIO_25
V21
VCCMSSIOB2
VCCMSSIOB2
VCCMSSIOB2
W1
PCAP
PCAP
PCAP
W3
NCAP
NCAP
NCAP
W4
ADC2
CM0
CM0
W5
ADC3
TM0
TM0
W6
ADC4
TM1
TM1
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
5- 30
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
CS288
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
W7
NC
ADC0
ADC0
W8
NC
ADC3
ADC3
W9
NC
GND33ADC0
GND33ADC0
W10
VCC15ADC0
VCC15ADC1
VCC15ADC1
W11
GND33ADC0
GND33ADC1
GND33ADC1
W12
ADC8
ADC5
ADC5
W13
CM0
CM3
CM3
W14
ADC5
CM2
CM2
W15
NC
ABPS5
ABPS5
W16
GNDAQ
GNDAQ
GNDAQ
W17
NC
VCC33SDD1
VCC33SDD1
W18
NC
GNDSDD1
GNDSDD1
W19
PTBASE
PTBASE
PTBASE
W21
SPI_0_DI/GPIO_17
SPI_0_DI/GPIO_17
SPI_0_DI/GPIO_17
Y1
VCC33AP
VCC33AP
VCC33AP
Y21
SPI_0_DO/GPIO_16
SPI_0_DO/GPIO_16
SPI_0_DO/GPIO_16
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
R ev i si o n 1 0
5- 31
Pin Descriptions
PQ208
1
208
208-Pin PQFP
Note
For Package Manufacturing and Environmental information, visit the Resource Center at
http://www.microsemi.com/soc/products/solutions/package/docs.aspx.
5- 32
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
PQ208
Pin Number
A2F200
A2F500
1
VCCPLL
VCCPLL0
2
VCOMPLA
VCOMPLA0
3
GNDQ
GNDQ
4
EMC_DB[15]/GAA2/IO71PDB5V0
GAA2/IO88PDB5V0
5
EMC_DB[14]/GAB2/IO71NDB5V0
GAB2/IO88NDB5V0
6
EMC_DB[13]/GAC2/IO70PDB5V0
GAC2/IO87PDB5V0
7
EMC_DB[12]/IO70NDB5V0
IO87NDB5V0
8
VCC
VCC
9
GND
GND
10
VCCFPGAIOB5
VCCFPGAIOB5
11
EMC_DB[11]/IO69PDB5V0
IO86PDB5V0
12
EMC_DB[10]/IO69NDB5V0
IO86NDB5V0
13
GFA2/IO68PSB5V0
GFA2/IO85PSB5V0
14
GFA1/IO64PDB5V0
GFA1/IO81PDB5V0
15
GFA0/IO64NDB5V0
GFA0/IO81NDB5V0
16
EMC_DB[9]/GEC1/IO63PDB5V0
GEC1/IO80PDB5V0
17
EMC_DB[8]/GEC0/IO63NDB5V0
GEC0/IO80NDB5V0
18
EMC_DB[7]/GEB1/IO62PDB5V0
GEB1/IO79PDB5V0
19
EMC_DB[6]/GEB0/IO62NDB5V0
GEB0/IO79NDB5V0
20
EMC_DB[5]/GEA1/IO61PDB5V0
GEA1/IO78PDB5V0
21
EMC_DB[4]/GEA0/IO61NDB5V0
GEA0/IO78NDB5V0
22
VCC
VCC
23
GND
GND
24
VCCFPGAIOB5
VCCFPGAIOB5
25
EMC_DB[3]/GEC2/IO60PDB5V0
GEC2/IO77PDB5V0
26
EMC_DB[2]/IO60NDB5V0
IO77NDB5V0
27
EMC_DB[1]/GEB2/IO59PDB5V0
GEB2/IO76PDB5V0
28
EMC_DB[0]/GEA2/IO59NDB5V0
GEA2/IO76NDB5V0
29
VCC
VCC
30
GND
GND
31
GNDRCOSC
GNDRCOSC
32
VCCRCOSC
VCCRCOSC
33
MSS_RESET_N
MSS_RESET_N
34
VCCESRAM
VCCESRAM
35
MAC_MDC/IO48RSB4V0
MAC_MDC/IO57RSB4V0
36
MAC_MDIO/IO49RSB4V0
MAC_MDIO/IO58RSB4V0
R ev i si o n 1 0
5- 33
Pin Descriptions
PQ208
5- 34
Pin Number
A2F200
A2F500
37
MAC_TXEN/IO52RSB4V0
MAC_TXEN/IO61RSB4V0
38
MAC_CRSDV/IO51RSB4V0
MAC_CRSDV/IO60RSB4V0
39
MAC_RXER/IO50RSB4V0
MAC_RXER/IO59RSB4V0
40
GND
GND
41
VCCMSSIOB4
VCCMSSIOB4
42
VCC
VCC
43
MAC_TXD[0]/IO56RSB4V0
MAC_TXD[0]/IO65RSB4V0
44
MAC_TXD[1]/IO55RSB4V0
MAC_TXD[1]/IO64RSB4V0
45
MAC_RXD[0]/IO54RSB4V0
MAC_RXD[0]/IO63RSB4V0
46
MAC_RXD[1]/IO53RSB4V0
MAC_RXD[1]/IO62RSB4V0
47
MAC_CLK
MAC_CLK
48
GNDSDD0
GNDSDD0
49
VCC33SDD0
VCC33SDD0
50
VCC15A
VCC15A
51
PCAP
PCAP
52
NCAP
NCAP
53
VCC33AP
VCC33AP
54
VCC33N
VCC33N
55
SDD0
SDD0
56
GNDA
GNDA
57
GNDAQ
GNDAQ
58
ABPS0
ABPS0
59
ABPS1
ABPS1
60
CM0
CM0
61
TM0
TM0
62
GNDTM0
GNDTM0
63
TM1
TM1
64
CM1
CM1
65
ABPS3
ABPS3
66
ABPS2
ABPS2
67
ADC0
ADC0
68
ADC1
ADC1
69
ADC2
ADC2
70
ADC3
ADC3
71
VAREF0
VAREF0
72
GND33ADC0
GND33ADC0
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
PQ208
Pin Number
A2F200
A2F500
73
VCC33ADC0
VCC33ADC0
74
GND33ADC0
GND33ADC0
75
VCC15ADC0
VCC15ADC0
76
GND15ADC0
GND15ADC0
77
GND15ADC1
GND15ADC1
78
VCC15ADC1
VCC15ADC1
79
GND33ADC1
GND33ADC1
80
VCC33ADC1
VCC33ADC1
81
GND33ADC1
GND33ADC1
82
VAREF1
VAREF1
83
ADC7
ADC7
84
ADC6
ADC6
85
ADC5
ADC5
86
ADC4
ADC4
87
ABPS6
ABPS6
88
ABPS7
ABPS7
89
CM3
CM3
90
TM3
TM3
91
GNDTM1
GNDTM1
92
TM2
TM2
93
CM2
CM2
94
ABPS5
ABPS5
95
ABPS4
ABPS4
96
GNDAQ
GNDAQ
97
GNDA
GNDA
98
NC
NC
99
GNDVAREF
GNDVAREF
100
VAREFOUT
VAREFOUT
101
PU_N
PU_N
102
VCC33A
VCC33A
103
PTEM
PTEM
104
PTBASE
PTBASE
105
SPI_0_DO/GPIO_16
SPI_0_DO/GPIO_16
106
SPI_0_DI/GPIO_17
SPI_0_DI/GPIO_17
107
SPI_0_CLK/GPIO_18
SPI_0_CLK/GPIO_18
108
SPI_0_SS/GPIO_19
SPI_0_SS/GPIO_19
R ev i si o n 1 0
5- 35
Pin Descriptions
PQ208
5- 36
Pin Number
A2F200
A2F500
109
UART_0_RXD/GPIO_21
UART_0_RXD/GPIO_21
110
UART_0_TXD/GPIO_20
UART_0_TXD/GPIO_20
111
UART_1_RXD/GPIO_29
UART_1_RXD/GPIO_29
112
UART_1_TXD/GPIO_28
UART_1_TXD/GPIO_28
113
VCC
VCC
114
VCCMSSIOB2
VCCMSSIOB2
115
GND
GND
116
I2C_1_SDA/GPIO_30
I2C_1_SDA/GPIO_30
117
I2C_1_SCL/GPIO_31
I2C_1_SCL/GPIO_31
118
I2C_0_SDA/GPIO_22
I2C_0_SDA/GPIO_22
119
I2C_0_SCL/GPIO_23
I2C_0_SCL/GPIO_23
120
GNDENVM
GNDENVM
121
VCCENVM
VCCENVM
122
JTAGSEL
JTAGSEL
123
TCK
TCK
124
TDI
TDI
125
TMS
TMS
126
TDO
TDO
127
TRSTB
TRSTB
128
VJTAG
VJTAG
129
VDDBAT
VDDBAT
130
VCCLPXTAL
VCCLPXTAL
131
LPXOUT
LPXOUT
132
LPXIN
LPXIN
133
GNDLPXTAL
GNDLPXTAL
134
GNDMAINXTAL
GNDMAINXTAL
135
MAINXOUT
MAINXOUT
136
MAINXIN
MAINXIN
137
VCCMAINXTAL
VCCMAINXTAL
138
GND
GND
139
VCC
VCC
140
VPP
VPP
141
VCCFPGAIOB1
VCCFPGAIOB1
142
GDA0/IO31NDB1V0
GDA0/IO40NDB1V0
143
GDA1/IO31PDB1V0
GDA1/IO40PDB1V0
144
GDC0/IO29NSB1V0
GDC0/IO38NSB1V0
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
PQ208
Pin Number
A2F200
A2F500
145
GCA0/IO28NDB1V0
GCA0/IO36NDB1V0
146
GCA1/IO28PDB1V0
GCA1/IO36PDB1V0
147
VCCFPGAIOB1
VCCFPGAIOB1
148
GND
GND
149
VCC
VCC
150
IO25NDB1V0
IO30NDB1V0
151
GCC2/IO25PDB1V0
GBC2/IO30PDB1V0
152
IO23NDB1V0
IO28NDB1V0
153
GCA2/IO23PDB1V0
GCA2/IO28PDB1V0
154
GBC2/IO21PSB1V0
GBB2/IO27NDB1V0
155
GBA2/IO20PSB1V0
GBA2/IO27PDB1V0
156
GNDQ
GNDQ
157
GNDQ
GNDQ
158
VCCFPGAIOB0
VCCFPGAIOB0
159
GBA1/IO19PDB0V0
GBA1/IO23PDB0V0
160
GBA0/IO19NDB0V0
GBA0/IO23NDB0V0
161
VCCFPGAIOB0
VCCFPGAIOB0
162
GND
GND
163
VCC
VCC
164
EMC_AB[25]/IO16PDB0V0
IO21PDB0V0
165
EMC_AB[24]/IO16NDB0V0
IO21NDB0V0
166
EMC_AB[23]/IO15PDB0V0
IO20PDB0V0
167
EMC_AB[22]/IO15NDB0V0
IO20NDB0V0
168
EMC_AB[21]/IO14PDB0V0
IO19PDB0V0
169
EMC_AB[20]/IO14NDB0V0
IO19NDB0V0
170
EMC_AB[19]/IO13PDB0V0
IO18PDB0V0
171
EMC_AB[18]/IO13NDB0V0
IO18NDB0V0
172
EMC_AB[17]/IO12PDB0V0
IO17PDB0V0
173
EMC_AB[16]/IO12NDB0V0
IO17NDB0V0
174
VCCFPGAIOB0
VCCFPGAIOB0
175
GND
GND
176
VCC
VCC
177
EMC_AB[15]/IO11PDB0V0
IO14PDB0V0
178
EMC_AB[14]/IO11NDB0V0
IO14NDB0V0
179
EMC_AB[13]/IO10PDB0V0
IO13PDB0V0
180
EMC_AB[12]/IO10NDB0V0
IO13NDB0V0
R ev i si o n 1 0
5- 37
Pin Descriptions
PQ208
5- 38
Pin Number
A2F200
A2F500
181
EMC_AB[11]/IO09PDB0V0
IO12PDB0V0
182
EMC_AB[10]/IO09NDB0V0
IO12NDB0V0
183
EMC_AB[9]/IO08PDB0V0
IO11PDB0V0
184
EMC_AB[8]/IO08NDB0V0
IO11NDB0V0
185
EMC_AB[7]/IO07PDB0V0
IO10PDB0V0
186
EMC_AB[6]/IO07NDB0V0
IO10NDB0V0
187
VCCFPGAIOB0
VCCFPGAIOB0
188
GND
GND
189
VCC
VCC
190
EMC_AB[5]/IO06PDB0V0
IO08PDB0V0
191
EMC_AB[4]/IO06NDB0V0
IO08NDB0V0
192
EMC_AB[3]/IO05PDB0V0
GAC1/IO07PDB0V0
193
EMC_AB[2]/IO05NDB0V0
GAC0/IO07NDB0V0
194
EMC_AB[1]/IO04PDB0V0
IO04PDB0V0
195
EMC_AB[0]/IO04NDB0V0
IO04NDB0V0
196
EMC_OEN1_N/IO03PDB0V0
IO03PDB0V0
197
EMC_OEN0_N/IO03NDB0V0
IO03NDB0V0
198
EMC_BYTEN[1]/GAC1/IO02PDB0V0
GAA1/IO02PDB0V0
199
EMC_BYTEN[0]/GAC0/IO02NDB0V0
GAA0/IO02NDB0V0
200
VCCFPGAIOB0
VCCFPGAIOB0
201
GND
GND
202
VCC
VCC
203
EMC_CS1_N/GAB1/IO01PDB0V0
IO01PDB0V0
204
EMC_CS0_N/GAB0/IO01NDB0V0
IO01NDB0V0
205
EMC_RW_N/GAA1/IO00PDB0V0
IO00PDB0V0
206
EMC_CLK/GAA0/IO00NDB0V0
IO00NDB0V0
207
VCCFPGAIOB0
VCCFPGAIOB0
208
GNDQ
GNDQ
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FG256
A1 Ball Pad Corner
16 15 14 13 12 11 10 9
8
7
6 5 4
3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
Note
For Package Manufacturing and Environmental information, visit the Resource Center at
http://www.microsemi.com/soc/products/solutions/package/docs.aspx.
R ev i si o n 1 0
5- 39
Pin Descriptions
FG256
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
A1
GND
GND
GND
A2
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
A3
EMC_AB[0]/IO04NDB0V0
EMC_AB[0]/IO04NDB0V0
EMC_AB[0]/IO06NDB0V0
A4
EMC_AB[1]/IO04PDB0V0
EMC_AB[1]/IO04PDB0V0
EMC_AB[1]/IO06PDB0V0
A5
GND
GND
GND
A6
EMC_AB[3]/IO05PDB0V0
EMC_AB[3]/IO05PDB0V0
EMC_AB[3]/IO09PDB0V0
A7
EMC_AB[5]/IO06PDB0V0
EMC_AB[5]/IO06PDB0V0
EMC_AB[5]/IO10PDB0V0
A8
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
A9
GND
GND
GND
A10
EMC_AB[14]/IO11NDB0V0
EMC_AB[14]/IO11NDB0V0
EMC_AB[14]/IO15NDB0V0
A11
EMC_AB[15]/IO11PDB0V0
EMC_AB[15]/IO11PDB0V0
EMC_AB[15]/IO15PDB0V0
A12
GND
GND
GND
A13
EMC_AB[20]/IO14NDB0V0
EMC_AB[20]/IO14NDB0V0
EMC_AB[20]/IO21NDB0V0
A14
EMC_AB[24]/IO16NDB0V0
EMC_AB[24]/IO16NDB0V0
EMC_AB[24]/IO20NDB0V0
A15
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
A16
GND
GND
GND
B1
EMC_DB[15]/IO45PDB5V0
EMC_DB[15]/GAA2/IO71PDB5V0
EMC_DB[15]/GAA2/IO88PDB5V0
B2
GND
GND
GND
B3
EMC_BYTEN[1]/IO02PDB0V0
B4
EMC_OEN0_N/IO03NDB0V0
EMC_OEN0_N/IO03NDB0V0
EMC_OEN0_N/IO08NDB0V0
B5
EMC_OEN1_N/IO03PDB0V0
EMC_OEN1_N/IO03PDB0V0
EMC_OEN1_N/IO08PDB0V0
B6
EMC_AB[2]/IO05NDB0V0
EMC_AB[2]/IO05NDB0V0
EMC_AB[2]/IO09NDB0V0
B7
EMC_AB[4]/IO06NDB0V0
EMC_AB[4]/IO06NDB0V0
EMC_AB[4]/IO10NDB0V0
B8
EMC_AB[9]/IO08PDB0V0
EMC_AB[9]/IO08PDB0V0
EMC_AB[9]/IO13PDB0V0
B9
EMC_AB[12]/IO10NDB0V0
EMC_AB[12]/IO10NDB0V0
EMC_AB[12]/IO14NDB0V0
B10
EMC_AB[13]/IO10PDB0V0
EMC_AB[13]/IO10PDB0V0
EMC_AB[13]/IO14PDB0V0
B11
EMC_AB[16]/IO12NDB0V0
EMC_AB[16]/IO12NDB0V0
EMC_AB[16]/IO17NDB0V0
B12
EMC_AB[18]/IO13NDB0V0
EMC_AB[18]/IO13NDB0V0
EMC_AB[18]/IO18NDB0V0
B13
EMC_AB[21]/IO14PDB0V0
EMC_AB[21]/IO14PDB0V0
EMC_AB[21]/IO21PDB0V0
B14
EMC_AB[25]/IO16PDB0V0
EMC_AB[25]/IO16PDB0V0
EMC_AB[25]/IO20PDB0V0
B15
GND
GND
GND
B16
GNDQ
GNDQ
GNDQ
C1
EMC_DB[14]/IO45NDB5V0
EMC_DB[14]/GAB2/IO71NDB5V0
EMC_DB[14]/GAB2/IO88NDB5V0
C2
VCCPLL0
VCCPLL
VCCPLL0
EMC_BYTEN[1]/GAC1/IO02PDB0V0 EMC_BYTEN[1]/GAC1/IO07PDB0V0
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
5- 40
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FG256
Pin
No.
A2F060 Function
C3
EMC_BYTEN[0]/IO02NDB0V0
C4
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
C5
EMC_CS0_N/IO01NDB0V0
EMC_CS0_N/GAB0/IO01NDB0V0
EMC_CS0_N/GAB0/IO05NDB0V0
C6
EMC_CS1_N/IO01PDB0V0
EMC_CS1_N/GAB1/IO01PDB0V0
EMC_CS1_N/GAB1/IO05PDB0V0
C7
GND
GND
GND
C8
EMC_AB[8]/IO08NDB0V0
EMC_AB[8]/IO08NDB0V0
EMC_AB[8]/IO13NDB0V0
C9
EMC_AB[11]/IO09PDB0V0
EMC_AB[11]/IO09PDB0V0
EMC_AB[11]/IO11PDB0V0
C10
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
C11
EMC_AB[17]/IO12PDB0V0
EMC_AB[17]/IO12PDB0V0
EMC_AB[17]/IO17PDB0V0
C12
EMC_AB[19]/IO13PDB0V0
EMC_AB[19]/IO13PDB0V0
EMC_AB[19]/IO18PDB0V0
C13
GND
GND
GND
C14
GCC0/IO18NPB0V0
GBA2/IO20PPB1V0
GBA2/IO27PPB1V0
C15
GCB0/IO19NDB0V0
GCA2/IO23PDB1V0
GCA2/IO28PDB1V0
C16
GCB1/IO19PDB0V0
IO23NDB1V0
IO28NDB1V0
D1
VCCFPGAIOB5
VCCFPGAIOB5
VCCFPGAIOB5
D2
VCOMPLA0
VCOMPLA
VCOMPLA0
D3
GND
GND
GND
D4
GNDQ
GNDQ
GNDQ
D5
EMC_CLK/IO00NDB0V0
EMC_CLK/GAA0/IO00NDB0V0
EMC_CLK/GAA0/IO02NDB0V0
D6
EMC_RW_N/IO00PDB0V0
EMC_RW_N/GAA1/IO00PDB0V0
EMC_RW_N/GAA1/IO02PDB0V0
D7
EMC_AB[6]/IO07NDB0V0
EMC_AB[6]/IO07NDB0V0
EMC_AB[6]/IO12NDB0V0
D8
EMC_AB[7]/IO07PDB0V0
EMC_AB[7]/IO07PDB0V0
EMC_AB[7]/IO12PDB0V0
D9
EMC_AB[10]/IO09NDB0V0
EMC_AB[10]/IO09NDB0V0
EMC_AB[10]/IO11NDB0V0
D10
EMC_AB[22]/IO15NDB0V0
EMC_AB[22]/IO15NDB0V0
EMC_AB[22]/IO19NDB0V0
D11
EMC_AB[23]/IO15PDB0V0
EMC_AB[23]/IO15PDB0V0
EMC_AB[23]/IO19PDB0V0
D12
GNDQ
GNDQ
GNDQ
D13
GCC1/IO18PPB0V0
GBB2/IO20NPB1V0
GBB2/IO27NPB1V0
D14
GCA0/IO20NDB0V0
GCB2/IO24PDB1V0
GCB2/IO33PDB1V0
D15
GCA1/IO20PDB0V0
IO24NDB1V0
IO33NDB1V0
D16
VCCFPGAIOB1
VCCFPGAIOB1
VCCFPGAIOB1
E1
EMC_DB[13]/IO44PDB5V0
EMC_DB[13]/GAC2/IO70PDB5V0
EMC_DB[13]/GAC2/IO87PDB5V0
E2
EMC_DB[12]/IO44NDB5V0
EMC_DB[12]/IO70NDB5V0
EMC_DB[12]/IO87NDB5V0
E3
GFA2/IO42PDB5V0
GFA2/IO68PDB5V0
GFA2/IO85PDB5V0
E4
EMC_DB[10]/IO43NPB5V0
EMC_DB[10]/IO69NPB5V0
EMC_DB[10]/IO86NPB5V0
A2F200 Function
A2F500 Function
EMC_BYTEN[0]/GAC0/IO02NDB0V0 EMC_BYTEN[0]/GAC0/IO07NDB0V0
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
R ev i si o n 1 0
5- 41
Pin Descriptions
FG256
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
E5
GNDQ
GNDQ
GNDQ
E6
GND
GND
GND
E7
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
E8
GND
GND
GND
E9
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
E10
GND
GND
GND
E11
VCCFPGAIOB0
VCCFPGAIOB0
VCCFPGAIOB0
E12
GCB2/IO22PDB1V0
GCA1/IO28PDB1V0
GCA1/IO36PDB1V0
E13
VCCFPGAIOB1
VCCFPGAIOB1
VCCFPGAIOB1
E14
GCA2/IO21PDB1V0
GCB1/IO27PDB1V0
GCB1/IO34PDB1V0
E15
GCC2/IO23PDB1V0
GDC1/IO29PDB1V0
GDC1/IO38PDB1V0
E16
IO23NDB1V0
GDC0/IO29NDB1V0
GDC0/IO38NDB1V0
F1
EMC_DB[9]/IO40PDB5V0
EMC_DB[9]/GEC1/IO63PDB5V0
EMC_DB[9]/GEC1/IO80PDB5V0
F2
GND
GND
GND
F3
GFB2/IO42NDB5V0
GFB2/IO68NDB5V0
GFB2/IO85NDB5V0
F4
VCCFPGAIOB5
VCCFPGAIOB5
VCCFPGAIOB5
F5
EMC_DB[11]/IO43PPB5V0
EMC_DB[11]/IO69PPB5V0
EMC_DB[11]/IO86PPB5V0
F6
VCCFPGAIOB5
VCCFPGAIOB5
VCCFPGAIOB5
F7
GND
GND
GND
F8
VCC
VCC
VCC
F9
GND
GND
GND
F10
VCC
VCC
VCC
F11
GND
GND
GND
F12
IO22NDB1V0
GCA0/IO28NDB1V0
GCA0/IO36NDB1V0
F13
NC
GNDQ
GNDQ
F14
IO21NDB1V0
GCB0/IO27NDB1V0
GCB0/IO34NDB1V0
F15
GND
GND
GND
F16
VCCENVM
VCCENVM
VCCENVM
G1
EMC_DB[8]/IO40NDB5V0
EMC_DB[8]/GEC0/IO63NDB5V0
EMC_DB[8]/GEC0/IO80NDB5V0
G2
EMC_DB[7]/IO39PDB5V0
EMC_DB[7]/GEB1/IO62PDB5V0
EMC_DB[7]/GEB1/IO79PDB5V0
G3
EMC_DB[6]/IO39NDB5V0
EMC_DB[6]/GEB0/IO62NDB5V0
EMC_DB[6]/GEB0/IO79NDB5V0
G4
GFC2/IO41PDB5V0
GFC2/IO67PDB5V0
GFC2/IO84PDB5V0
G5
IO41NDB5V0
IO67NDB5V0
IO84NDB5V0
G6
GND
GND
GND
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
5- 42
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FG256
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
G7
VCC
VCC
VCC
G8
GND
GND
GND
G9
VCC
VCC
VCC
G10
GND
GND
GND
G11
VCCFPGAIOB1
VCCFPGAIOB1
VCCFPGAIOB1
G12
VPP
VPP
VPP
G13
TRSTB
TRSTB
TRSTB
G14
TMS
TMS
TMS
G15
TCK
TCK
TCK
G16
GNDENVM
GNDENVM
GNDENVM
H1
GND
GND
GND
H2
EMC_DB[5]/IO38PPB5V0
EMC_DB[5]/GEA1/IO61PPB5V0
EMC_DB[5]/GEA1/IO78PPB5V0
H3
VCCFPGAIOB5
VCCFPGAIOB5
VCCFPGAIOB5
H4
EMC_DB[1]/IO36PDB5V0
EMC_DB[1]/GEB2/IO59PDB5V0
EMC_DB[1]/GEB2/IO76PDB5V0
H5
EMC_DB[0]/IO36NDB5V0
EMC_DB[0]/GEA2/IO59NDB5V0
EMC_DB[0]/GEA2/IO76NDB5V0
H6
VCCFPGAIOB5
VCCFPGAIOB5
VCCFPGAIOB5
H7
GND
GND
GND
H8
VCC
VCC
VCC
H9
GND
GND
GND
H10
VCC
VCC
VCC
H11
GND
GND
GND
H12
VJTAG
VJTAG
VJTAG
H13
TDO
TDO
TDO
H14
TDI
TDI
TDI
H15
JTAGSEL
JTAGSEL
JTAGSEL
H16
GND
GND
GND
J1
EMC_DB[4]/IO38NPB5V0
EMC_DB[4]/GEA0/IO61NPB5V0
EMC_DB[4]/GEA0/IO78NPB5V0
J2
EMC_DB[3]/IO37PDB5V0
EMC_DB[3]/GEC2/IO60PDB5V0
EMC_DB[3]/GEC2/IO77PDB5V0
J3
EMC_DB[2]/IO37NDB5V0
EMC_DB[2]/IO60NDB5V0
EMC_DB[2]/IO77NDB5V0
J4
GNDRCOSC
GNDRCOSC
GNDRCOSC
J5
NC
GNDQ
GNDQ
J6
GND
GND
GND
J7
VCC
VCC
VCC
J8
GND
GND
GND
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
R ev i si o n 1 0
5- 43
Pin Descriptions
FG256
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
J9
VCC
VCC
VCC
J10
GND
GND
GND
J11
VCCMSSIOB2
VCCMSSIOB2
VCCMSSIOB2
J12
I2C_0_SCL/GPIO_23
I2C_0_SCL/GPIO_23
I2C_0_SCL/GPIO_23
J13
I2C_0_SDA/GPIO_22
I2C_0_SDA/GPIO_22
I2C_0_SDA/GPIO_22
J14
I2C_1_SCL/GPIO_31
I2C_1_SCL/GPIO_31
I2C_1_SCL/GPIO_31
J15
VCCMSSIOB2
VCCMSSIOB2
VCCMSSIOB2
J16
I2C_1_SDA/GPIO_30
I2C_1_SDA/GPIO_30
I2C_1_SDA/GPIO_30
K1
GPIO_1/IO32RSB4V0
MAC_MDIO/IO49RSB4V0
MAC_MDIO/IO58RSB4V0
K2
GPIO_0/IO33RSB4V0
MAC_MDC/IO48RSB4V0
MAC_MDC/IO57RSB4V0
K3
VCCMSSIOB4
VCCMSSIOB4
VCCMSSIOB4
K4
MSS_RESET_N
MSS_RESET_N
MSS_RESET_N
K5
VCCRCOSC
VCCRCOSC
VCCRCOSC
K6
VCCMSSIOB4
VCCMSSIOB4
VCCMSSIOB4
K7
GND
GND
GND
K8
VCC
VCC
VCC
K9
GND
GND
GND
K10
VCC
VCC
VCC
K11
GND
GND
GND
K12
UART_0_RXD/GPIO_21
UART_0_RXD/GPIO_21
UART_0_RXD/GPIO_21
K13
GND
GND
GND
K14
UART_1_TXD/GPIO_28
UART_1_TXD/GPIO_28
UART_1_TXD/GPIO_28
K15
UART_1_RXD/GPIO_29
UART_1_RXD/GPIO_29
UART_1_RXD/GPIO_29
K16
UART_0_TXD/GPIO_20
UART_0_TXD/GPIO_20
UART_0_TXD/GPIO_20
L1
GND
GND
GND
L2
GPIO_2/IO31RSB4V0
MAC_TXEN/IO52RSB4V0
MAC_TXEN/IO61RSB4V0
L3
GPIO_3/IO30RSB4V0
MAC_CRSDV/IO51RSB4V0
MAC_CRSDV/IO60RSB4V0
L4
GPIO_4/IO29RSB4V0
MAC_RXER/IO50RSB4V0
MAC_RXER/IO59RSB4V0
L5
GPIO_9/IO24RSB4V0
MAC_CLK
MAC_CLK
L6
GND
GND
GND
L7
VCC
VCC
VCC
L8
GND
GND
GND
L9
VCC
VCC
VCC
L10
GND
GND
GND
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
5- 44
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FG256
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
L11
VCCMSSIOB2
VCCMSSIOB2
VCCMSSIOB2
L12
SPI_1_DO/GPIO_24
SPI_1_DO/GPIO_24
SPI_1_DO/GPIO_24
L13
SPI_1_SS/GPIO_27
SPI_1_SS/GPIO_27
SPI_1_SS/GPIO_27
L14
SPI_1_CLK/GPIO_26
SPI_1_CLK/GPIO_26
SPI_1_CLK/GPIO_26
L15
SPI_1_DI/GPIO_25
SPI_1_DI/GPIO_25
SPI_1_DI/GPIO_25
L16
GND
GND
GND
M1
GPIO_5/IO28RSB4V0
MAC_TXD[0]/IO56RSB4V0
MAC_TXD[0]/IO65RSB4V0
M2
GPIO_6/IO27RSB4V0
MAC_TXD[1]/IO55RSB4V0
MAC_TXD[1]/IO64RSB4V0
M3
GPIO_7/IO26RSB4V0
MAC_RXD[0]/IO54RSB4V0
MAC_RXD[0]/IO63RSB4V0
M4
GND
GND
GND
M5
NC
ADC3
ADC3
M6
NC
GND15ADC0
GND15ADC0
M7
GND33ADC0
GND33ADC1
GND33ADC1
M8
GND33ADC0
GND33ADC1
GND33ADC1
M9
ADC7
ADC4
ADC4
M10
GNDTM0
GNDTM1
GNDTM1
M11
ADC6
TM2
TM2
M12
ADC5
CM2
CM2
M13
SPI_0_SS/GPIO_19
SPI_0_SS/GPIO_19
SPI_0_SS/GPIO_19
M14
VCCMSSIOB2
VCCMSSIOB2
VCCMSSIOB2
M15
SPI_0_CLK/GPIO_18
SPI_0_CLK/GPIO_18
SPI_0_CLK/GPIO_18
M16
SPI_0_DI/GPIO_17
SPI_0_DI/GPIO_17
SPI_0_DI/GPIO_17
N1
GPIO_8/IO25RSB4V0
MAC_RXD[1]/IO53RSB4V0
MAC_RXD[1]/IO62RSB4V0
N2
VCCMSSIOB4
VCCMSSIOB4
VCCMSSIOB4
N3
VCC15A
VCC15A
VCC15A
N4
VCC33AP
VCC33AP
VCC33AP
N5
NC
ABPS3
ABPS3
N6
ADC4
TM1
TM1
N7
NC
GND33ADC0
GND33ADC0
N8
VCC33ADC0
VCC33ADC1
VCC33ADC1
N9
ADC8
ADC5
ADC5
N10
CM0
CM3
CM3
N11
GNDAQ
GNDAQ
GNDAQ
N12
VAREFOUT
VAREFOUT
VAREFOUT
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
R ev i si o n 1 0
5- 45
Pin Descriptions
FG256
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
N13
NC
GNDSDD1
GNDSDD1
N14
NC
VCC33SDD1
VCC33SDD1
N15
GND
GND
GND
N16
SPI_0_DO/GPIO_16
SPI_0_DO/GPIO_16
SPI_0_DO/GPIO_16
P1
GNDSDD0
GNDSDD0
GNDSDD0
P2
VCC33SDD0
VCC33SDD0
VCC33SDD0
P3
VCC33N
VCC33N
VCC33N
P4
GNDA
GNDA
GNDA
P5
GNDAQ
GNDAQ
GNDAQ
P6
NC
CM1
CM1
P7
NC
ADC2
ADC2
P8
NC
VCC15ADC0
VCC15ADC0
P9
ADC9
ADC6
ADC6
P10
TM0
TM3
TM3
P11
GNDA
GNDA
GNDA
P12
VCCMAINXTAL
VCCMAINXTAL
VCCMAINXTAL
P13
GNDLPXTAL
GNDLPXTAL
GNDLPXTAL
P14
VDDBAT
VDDBAT
VDDBAT
P15
PTEM
PTEM
PTEM
P16
PTBASE
PTBASE
PTBASE
R1
PCAP
PCAP
PCAP
R2
SDD0
SDD0
SDD0
R3
ADC0
ABPS0
ABPS0
R4
ADC3
TM0
TM0
R5
NC
ABPS2
ABPS2
R6
NC
ADC1
ADC1
R7
NC
VCC33ADC0
VCC33ADC0
R8
VCC15ADC0
VCC15ADC1
VCC15ADC1
R9
ADC10
ADC7
ADC7
R10
ABPS1
ABPS7
ABPS7
R11
NC
ABPS4
ABPS4
R12
MAINXIN
MAINXIN
MAINXIN
R13
MAINXOUT
MAINXOUT
MAINXOUT
R14
LPXIN
LPXIN
LPXIN
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
5- 46
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FG256
Pin
No.
A2F060 Function
A2F200 Function
A2F500 Function
R15
LPXOUT
LPXOUT
LPXOUT
R16
VCC33A
VCC33A
VCC33A
T1
NCAP
NCAP
NCAP
T2
ADC1
ABPS1
ABPS1
T3
ADC2
CM0
CM0
T4
NC
GNDTM0
GNDTM0
T5
NC
ADC0
ADC0
T6
NC
VAREF0
VAREF0
T7
NC
GND33ADC0
GND33ADC0
T8
GND15ADC0
GND15ADC1
GND15ADC1
T9
VAREF0
VAREF1
VAREF1
T10
ABPS0
ABPS6
ABPS6
T11
NC
ABPS5
ABPS5
T12
NC
SDD1
SDD1
T13
GNDVAREF
GNDVAREF
GNDVAREF
T14
GNDMAINXTAL
GNDMAINXTAL
GNDMAINXTAL
T15
VCCLPXTAL
VCCLPXTAL
VCCLPXTAL
T16
PU_N
PU_N
PU_N
Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the
bank assignment can be different for an I/O, or the function might be available only on a larger density device.
R ev i si o n 1 0
5- 47
Pin Descriptions
FG484
A1 Ball Pad Corner
22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
Y
AA
AB
Note
For Package Manufacturing and Environmental information, visit the Resource Center at
http://www.microsemi.com/soc/products/solutions/package/docs.aspx.
5- 48
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FG484
Pin Number
A2F200 Function
A2F500 Function
A1
GND
GND
A2
NC
NC
A3
NC
NC
A4
GND
GND
A5
EMC_CS0_N/GAB0/IO01NDB0V0
EMC_CS0_N/GAB0/IO05NDB0V0
A6
EMC_CS1_N/GAB1/IO01PDB0V0
EMC_CS1_N/GAB1/IO05PDB0V0
A7
GND
GND
A8
EMC_AB[0]/IO04NDB0V0
EMC_AB[0]/IO06NDB0V0
A9
EMC_AB[1]/IO04PDB0V0
EMC_AB[1]/IO06PDB0V0
A10
GND
GND
A11
NC
NC
A12
EMC_AB[7]/IO07PDB0V0
EMC_AB[7]/IO12PDB0V0
A13
GND
GND
A14
EMC_AB[12]/IO10NDB0V0
EMC_AB[12]/IO14NDB0V0
A15
EMC_AB[13]/IO10PDB0V0
EMC_AB[13]/IO14PDB0V0
A16
GND
GND
A17
NC
IO16NDB0V0
A18
NC
IO16PDB0V0
A19
GND
GND
A20
NC
NC
A21
NC
NC
A22
GND
GND
AA1
GPIO_4/IO43RSB4V0
GPIO_4/IO52RSB4V0
AA2
GPIO_12/IO37RSB4V0
GPIO_12/IO46RSB4V0
AA3
MAC_MDC/IO48RSB4V0
MAC_MDC/IO57RSB4V0
AA4
MAC_RXER/IO50RSB4V0
MAC_RXER/IO59RSB4V0
AA5
MAC_TXD[0]/IO56RSB4V0
MAC_TXD[0]/IO65RSB4V0
AA6
ABPS0
ABPS0
AA7
TM1
TM1
AA8
ADC1
ADC1
AA9
GND15ADC1
GND15ADC1
AA10
GND33ADC1
GND33ADC1
AA11
CM3
CM3
AA12
GNDTM1
GNDTM1
AA13
NC
ADC10
AA14
NC
ADC9
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
R ev i si o n 1 0
5- 49
Pin Descriptions
FG484
Pin Number
A2F200 Function
A2F500 Function
AA15
NC
GND15ADC2
AA16
MAINXIN
MAINXIN
AA17
MAINXOUT
MAINXOUT
AA18
LPXIN
LPXIN
AA19
LPXOUT
LPXOUT
AA20
NC
NC
AA21
NC
NC
AA22
SPI_1_CLK/GPIO_26
SPI_1_CLK/GPIO_26
AB1
GND
GND
AB2
GPIO_13/IO36RSB4V0
GPIO_13/IO45RSB4V0
AB3
GPIO_14/IO35RSB4V0
GPIO_14/IO44RSB4V0
AB4
GND
GND
AB5
PCAP
PCAP
AB6
NCAP
NCAP
AB7
ABPS3
ABPS3
AB8
ADC3
ADC3
AB9
GND15ADC0
GND15ADC0
AB10
VCC33ADC1
VCC33ADC1
AB11
VAREF1
VAREF1
AB12
TM2
TM2
AB13
CM2
CM2
AB14
ABPS4
ABPS4
AB15
GNDAQ
GNDAQ
AB16
GNDMAINXTAL
GNDMAINXTAL
AB17
GNDLPXTAL
GNDLPXTAL
AB18
VCCLPXTAL
VCCLPXTAL
AB19
VDDBAT
VDDBAT
AB20
PTBASE
PTBASE
AB21
NC
NC
AB22
GND
GND
B1
EMC_DB[15]/GAA2/IO71PDB5V0
EMC_DB[15]/GAA2/IO88PDB5V0
B2
GND
GND
B3
NC
NC
B4
NC
NC
B5
VCCFPGAIOB0
VCCFPGAIOB0
B6
EMC_RW_N/GAA1/IO00PDB0V0
EMC_RW_N/GAA1/IO02PDB0V0
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
5- 50
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FG484
Pin Number
A2F200 Function
A2F500 Function
B7
NC
IO04PPB0V0
B8
VCCFPGAIOB0
VCCFPGAIOB0
B9
EMC_BYTEN[0]/GAC0/IO02NDB0V0
EMC_BYTEN[0]/GAC0/IO07NDB0V0
B10
EMC_AB[2]/IO05NDB0V0
EMC_AB[2]/IO09NDB0V0
B11
EMC_AB[3]/IO05PDB0V0
EMC_AB[3]/IO09PDB0V0
B12
EMC_AB[6]/IO07NDB0V0
EMC_AB[6]/IO12NDB0V0
B13
EMC_AB[14]/IO11NDB0V0
EMC_AB[14]/IO15NDB0V0
B14
EMC_AB[15]/IO11PDB0V0
EMC_AB[15]/IO15PDB0V0
B15
VCCFPGAIOB0
VCCFPGAIOB0
B16
EMC_AB[18]/IO13NDB0V0
EMC_AB[18]/IO18NDB0V0
B17
EMC_AB[19]/IO13PDB0V0
EMC_AB[19]/IO18PDB0V0
B18
VCCFPGAIOB0
VCCFPGAIOB0
B19
GBB0/IO18NDB0V0
GBB0/IO24NDB0V0
B20
GBB1/IO18PDB0V0
GBB1/IO24PDB0V0
B21
GND
GND
B22
GBA2/IO20PDB1V0
GBA2/IO27PDB1V0
C1
EMC_DB[14]/GAB2/IO71NDB5V0
EMC_DB[14]/GAB2/IO88NDB5V0
C2
NC
NC
C3
NC
NC
C4
NC
IO01NDB0V0
C5
NC
IO01PDB0V0
C6
EMC_CLK/GAA0/IO00NDB0V0
EMC_CLK/GAA0/IO02NDB0V0
C7
NC
IO03PPB0V0
C8
NC
IO04NPB0V0
C9
EMC_BYTEN[1]/GAC1/IO02PDB0V0
EMC_BYTEN[1]/GAC1/IO07PDB0V0
C10
EMC_OEN1_N/IO03PDB0V0
EMC_OEN1_N/IO08PDB0V0
C11
GND
GND
C12
VCCFPGAIOB0
VCCFPGAIOB0
C13
EMC_AB[8]/IO08NDB0V0
EMC_AB[8]/IO13NDB0V0
C14
EMC_AB[16]/IO12NDB0V0
EMC_AB[16]/IO17NDB0V0
C15
EMC_AB[17]/IO12PDB0V0
EMC_AB[17]/IO17PDB0V0
C16
EMC_AB[24]/IO16NDB0V0
EMC_AB[24]/IO20NDB0V0
C17
EMC_AB[22]/IO15NDB0V0
EMC_AB[22]/IO19NDB0V0
C18
EMC_AB[23]/IO15PDB0V0
EMC_AB[23]/IO19PDB0V0
C19
GBA0/IO19NPB0V0
GBA0/IO23NPB0V0
C20
NC
NC
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
R ev i si o n 1 0
5- 51
Pin Descriptions
FG484
Pin Number
A2F200 Function
A2F500 Function
C21
GBC2/IO21PDB1V0
GBC2/IO30PDB1V0
C22
GBB2/IO20NDB1V0
GBB2/IO27NDB1V0
D1
GND
GND
D2
EMC_DB[12]/IO70NDB5V0
EMC_DB[12]/IO87NDB5V0
D3
EMC_DB[13]/GAC2/IO70PDB5V0
EMC_DB[13]/GAC2/IO87PDB5V0
D4
NC
NC
D5
NC
NC
D6
GND
GND
D7
NC
IO00NPB0V0
D8
NC
IO03NPB0V0
D9
GND
GND
D10
EMC_OEN0_N/IO03NDB0V0
EMC_OEN0_N/IO08NDB0V0
D11
EMC_AB[10]/IO09NDB0V0
EMC_AB[10]/IO11NDB0V0
D12
EMC_AB[11]/IO09PDB0V0
EMC_AB[11]/IO11PDB0V0
D13
EMC_AB[9]/IO08PDB0V0
EMC_AB[9]/IO13PDB0V0
D14
GND
GND
D15
GBC1/IO17PPB0V0
GBC1/IO22PPB0V0
D16
EMC_AB[25]/IO16PDB0V0
EMC_AB[25]/IO20PDB0V0
D17
GND
GND
D18
GBA1/IO19PPB0V0
GBA1/IO23PPB0V0
D19
NC
NC
D20
NC
NC
D21
IO21NDB1V0
IO30NDB1V0
D22
GND
GND
E1
GFC2/IO67PPB5V0
GFC2/IO84PPB5V0
E2
VCCFPGAIOB5
VCCFPGAIOB5
E3
GFA2/IO68PDB5V0
GFA2/IO85PDB5V0
E4
GND
GND
E5
NC
NC
E6
GNDQ
GNDQ
E7
VCCFPGAIOB0
VCCFPGAIOB0
E8
NC
IO00PPB0V0
E9
NC
NC
E10
VCCFPGAIOB0
VCCFPGAIOB0
E11
EMC_AB[4]/IO06NDB0V0
EMC_AB[4]/IO10NDB0V0
E12
EMC_AB[5]/IO06PDB0V0
EMC_AB[5]/IO10PDB0V0
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
5- 52
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FG484
Pin Number
A2F200 Function
A2F500 Function
E13
VCCFPGAIOB0
VCCFPGAIOB0
E14
GBC0/IO17NPB0V0
GBC0/IO22NPB0V0
E15
NC
NC
E16
VCCFPGAIOB0
VCCFPGAIOB0
E17
NC
VCOMPLA1
E18
NC
IO25NPB1V0
E19
GND
GND
E20
NC
NC
E21
VCCFPGAIOB1
VCCFPGAIOB1
E22
IO22NDB1V0
IO32NDB1V0
F1
GFB1/IO65PPB5V0
GFB1/IO82PPB5V0
F2
IO67NPB5V0
IO84NPB5V0
F3
GFB2/IO68NDB5V0
GFB2/IO85NDB5V0
F4
EMC_DB[10]/IO69NPB5V0
EMC_DB[10]/IO86NPB5V0
F5
VCCFPGAIOB5
VCCFPGAIOB5
F6
VCCPLL
VCCPLL0
F7
VCOMPLA
VCOMPLA0
F8
NC
NC
F9
NC
NC
F10
NC
NC
F11
NC
NC
F12
NC
NC
F13
EMC_AB[20]/IO14NDB0V0
EMC_AB[20]/IO21NDB0V0
F14
EMC_AB[21]/IO14PDB0V0
EMC_AB[21]/IO21PDB0V0
F15
GNDQ
GNDQ
F16
NC
VCCPLL1
F17
NC
IO25PPB1V0
F18
VCCFPGAIOB1
VCCFPGAIOB1
F19
IO23NDB1V0
IO28NDB1V0
F20
NC
IO31PDB1V0
F21
NC
IO31NDB1V0
F22
IO22PDB1V0
IO32PDB1V0
G1
GND
GND
G2
GFB0/IO65NPB5V0
GFB0/IO82NPB5V0
G3
EMC_DB[9]/GEC1/IO63PDB5V0
EMC_DB[9]/GEC1/IO80PDB5V0
G4
GFC1/IO66PPB5V0
GFC1/IO83PPB5V0
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
R ev i si o n 1 0
5- 53
Pin Descriptions
FG484
Pin Number
A2F200 Function
A2F500 Function
G5
EMC_DB[11]/IO69PPB5V0
EMC_DB[11]/IO86PPB5V0
G6
GNDQ
GNDQ
G7
NC
NC
G8
GND
GND
G9
VCCFPGAIOB0
VCCFPGAIOB0
G10
GND
GND
G11
VCCFPGAIOB0
VCCFPGAIOB0
G12
GND
GND
G13
VCCFPGAIOB0
VCCFPGAIOB0
G14
GND
GND
G15
VCCFPGAIOB0
VCCFPGAIOB0
G16
GNDQ
GNDQ
G17
NC
IO26PDB1V0
G18
NC
IO26NDB1V0
G19
GCA2/IO23PDB1V0
GCA2/IO28PDB1V0
G20
IO24NDB1V0
IO33NDB1V0
G21
GCB2/IO24PDB1V0
GCB2/IO33PDB1V0
G22
GND
GND
H1
EMC_DB[7]/GEB1/IO62PDB5V0
EMC_DB[7]/GEB1/IO79PDB5V0
H2
VCCFPGAIOB5
VCCFPGAIOB5
H3
EMC_DB[8]/GEC0/IO63NDB5V0
EMC_DB[8]/GEC0/IO80NDB5V0
H4
GND
GND
H5
GFC0/IO66NPB5V0
GFC0/IO83NPB5V0
H6
GFA1/IO64PDB5V0
GFA1/IO81PDB5V0
H7
GND
GND
H8
VCC
VCC
H9
GND
GND
H10
VCC
VCC
H11
GND
GND
H12
VCC
VCC
H13
GND
GND
H14
VCC
VCC
H15
GND
GND
H16
VCCFPGAIOB1
VCCFPGAIOB1
H17
IO25NDB1V0
IO29NDB1V0
H18
GCC2/IO25PDB1V0
GCC2/IO29PDB1V0
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
5- 54
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FG484
Pin Number
A2F200 Function
A2F500 Function
H19
GND
GND
H20
GCC0/IO26NPB1V0
GCC0/IO35NPB1V0
H21
VCCFPGAIOB1
VCCFPGAIOB1
H22
GCB0/IO27NDB1V0
GCB0/IO34NDB1V0
J1
EMC_DB[6]/GEB0/IO62NDB5V0
EMC_DB[6]/GEB0/IO79NDB5V0
J2
EMC_DB[5]/GEA1/IO61PDB5V0
EMC_DB[5]/GEA1/IO78PDB5V0
J3
EMC_DB[4]/GEA0/IO61NDB5V0
EMC_DB[4]/GEA0/IO78NDB5V0
J4
EMC_DB[3]/GEC2/IO60PPB5V0
EMC_DB[3]/GEC2/IO77PPB5V0
J5
VCCFPGAIOB5
VCCFPGAIOB5
J6
GFA0/IO64NDB5V0
GFA0/IO81NDB5V0
J7
VCCFPGAIOB5
VCCFPGAIOB5
J8
GND
GND
J9
VCC
VCC
J10
GND
GND
J11
VCC
VCC
J12
GND
GND
J13
VCC
VCC
J14
GND
GND
J15
VCC
VCC
J16
GND
GND
J17
NC
IO37PDB1V0
J18
VCCFPGAIOB1
VCCFPGAIOB1
J19
GCA0/IO28NDB1V0
GCA0/IO36NDB1V0
J20
GCA1/IO28PDB1V0
GCA1/IO36PDB1V0
J21
GCC1/IO26PPB1V0
GCC1/IO35PPB1V0
J22
GCB1/IO27PDB1V0
GCB1/IO34PDB1V0
K1
GND
GND
K2
EMC_DB[0]/GEA2/IO59NDB5V0
EMC_DB[0]/GEA2/IO76NDB5V0
K3
EMC_DB[1]/GEB2/IO59PDB5V0
EMC_DB[1]/GEB2/IO76PDB5V0
K4
NC
IO74PPB5V0
K5
EMC_DB[2]/IO60NPB5V0
EMC_DB[2]/IO77NPB5V0
K6
NC
IO75PDB5V0
K7
GND
GND
K8
VCC
VCC
K9
GND
GND
K10
VCC
VCC
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
R ev i si o n 1 0
5- 55
Pin Descriptions
FG484
Pin Number
A2F200 Function
A2F500 Function
K11
GND
GND
K12
VCC
VCC
K13
GND
GND
K14
VCC
VCC
K15
GND
GND
K16
VCCFPGAIOB1
VCCFPGAIOB1
K17
NC
IO37NDB1V0
K18
GDA1/IO31PDB1V0
GDA1/IO40PDB1V0
K19
GDA0/IO31NDB1V0
GDA0/IO40NDB1V0
K20
GDC1/IO29PDB1V0
GDC1/IO38PDB1V0
K21
GDC0/IO29NDB1V0
GDC0/IO38NDB1V0
K22
GND
GND
L1
NC
IO73PDB5V0
L2
NC
IO73NDB5V0
L3
NC
IO72PPB5V0
L4
GND
GND
L5
NC
IO74NPB5V0
L6
NC
IO75NDB5V0
L7
VCCFPGAIOB5
VCCFPGAIOB5
L8
GND
GND
L9
VCC
VCC
L10
GND
GND
L11
VCC
VCC
L12
GND
GND
L13
VCC
VCC
L14
GND
GND
L15
VCC
VCC
L16
GND
GND
L17
GNDQ
GNDQ
L18
GDA2/IO33NDB1V0
GDA2/IO42NDB1V0
L19
VCCFPGAIOB1
VCCFPGAIOB1
L20
GDB1/IO30PDB1V0
GDB1/IO39PDB1V0
L21
GDB0/IO30NDB1V0
GDB0/IO39NDB1V0
L22
GDC2/IO32PDB1V0
GDC2/IO41PDB1V0
M1
NC
IO71PDB5V0
M2
NC
IO71NDB5V0
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
5- 56
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FG484
Pin Number
A2F200 Function
A2F500 Function
M3
VCCFPGAIOB5
VCCFPGAIOB5
M4
NC
IO72NPB5V0
M5
GNDQ
GNDQ
M6
NC
IO68PDB5V0
M7
GND
GND
M8
VCC
VCC
M9
GND
GND
M10
VCC
VCC
M11
GND
GND
M12
VCC
VCC
M13
GND
GND
M14
VCC
VCC
M15
GND
GND
M16
VCCFPGAIOB1
VCCFPGAIOB1
M17
NC
NC
M18
GDB2/IO33PDB1V0
GDB2/IO42PDB1V0
M19
VJTAG
VJTAG
M20
GND
GND
M21
VPP
VPP
M22
IO32NDB1V0
IO41NDB1V0
N1
GND
GND
N2
NC
IO70PDB5V0
N3
NC
IO70NDB5V0
N4
VCCRCOSC
VCCRCOSC
N5
VCCFPGAIOB5
VCCFPGAIOB5
N6
NC
IO68NDB5V0
N7
VCCFPGAIOB5
VCCFPGAIOB5
N8
GND
GND
N9
VCC
VCC
N10
GND
GND
N11
VCC
VCC
N12
GND
GND
N13
VCC
VCC
N14
GND
GND
N15
VCC
VCC
N16
NC
GND
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
R ev i si o n 1 0
5- 57
Pin Descriptions
FG484
Pin Number
A2F200 Function
A2F500 Function
N17
NC
NC
N18
VCCFPGAIOB1
VCCFPGAIOB1
N19
VCCENVM
VCCENVM
N20
GNDENVM
GNDENVM
N21
NC
NC
N22
GND
GND
P1
NC
IO69NDB5V0
P2
NC
IO69PDB5V0
P3
GNDRCOSC
GNDRCOSC
P4
GND
GND
P5
NC
NC
P6
NC
NC
P7
GND
GND
P8
VCC
VCC
P9
GND
GND
P10
VCC
VCC
P11
GND
GND
P12
VCC
VCC
P13
GND
GND
P14
VCC
VCC
P15
GND
GND
P16
VCCFPGAIOB1
VCCFPGAIOB1
P17
TDI
TDI
P18
TCK
TCK
P19
GND
GND
P20
TMS
TMS
P21
TDO
TDO
P22
TRSTB
TRSTB
R1
MSS_RESET_N
MSS_RESET_N
R2
VCCFPGAIOB5
VCCFPGAIOB5
R3
GPIO_1/IO46RSB4V0
GPIO_1/IO55RSB4V0
R4
NC
NC
R5
NC
NC
R6
NC
NC
R7
NC
NC
R8
GND
GND
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
5- 58
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FG484
Pin Number
A2F200 Function
A2F500 Function
R9
VCC
VCC
R10
GND
GND
R11
VCC
VCC
R12
GND
GND
R13
VCC
VCC
R14
GND
GND
R15
VCC
VCC
R16
JTAGSEL
JTAGSEL
R17
NC
NC
R18
NC
NC
R19
NC
NC
R20
NC
NC
R21
VCCFPGAIOB1
VCCFPGAIOB1
R22
NC
NC
T1
GND
GND
T2
VCCMSSIOB4
VCCMSSIOB4
T3
GPIO_8/IO39RSB4V0
GPIO_8/IO48RSB4V0
T4
GPIO_11/IO57RSB4V0
GPIO_11/IO66RSB4V0
T5
GND
GND
T6
MAC_CLK
MAC_CLK
T7
VCCMSSIOB4
VCCMSSIOB4
T8
VCC33SDD0
VCC33SDD0
T9
VCC15A
VCC15A
T10
GNDAQ
GNDAQ
T11
GND33ADC0
GND33ADC0
T12
ADC7
ADC7
T13
NC
TM4
T14
NC
VAREF2
T15
VAREFOUT
VAREFOUT
T16
VCCMSSIOB2
VCCMSSIOB2
T17
SPI_1_DO/GPIO_24
SPI_1_DO/GPIO_24
T18
GND
GND
T19
NC
NC
T20
NC
NC
T21
VCCMSSIOB2
VCCMSSIOB2
T22
GND
GND
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
R ev i si o n 1 0
5- 59
Pin Descriptions
FG484
Pin Number
A2F200 Function
A2F500 Function
U1
GND
GND
U2
GPIO_5/IO42RSB4V0
GPIO_5/IO51RSB4V0
U3
GPIO_10/IO58RSB4V0
GPIO_10/IO67RSB4V0
U4
VCCMSSIOB4
VCCMSSIOB4
U5
MAC_RXD[1]/IO53RSB4V0
MAC_RXD[1]/IO62RSB4V0
U6
NC
NC
U7
VCC33AP
VCC33AP
U8
VCC33N
VCC33N
U9
CM1
CM1
U10
VAREF0
VAREF0
U11
GND33ADC1
GND33ADC1
U12
ADC4
ADC4
U13
NC
GNDTM2
U14
NC
ADC11
U15
GNDVAREF
GNDVAREF
U16
VCC33SDD1
VCC33SDD1
U17
SPI_0_DO/GPIO_16
SPI_0_DO/GPIO_16
U18
UART_0_RXD/GPIO_21
UART_0_RXD/GPIO_21
U19
VCCMSSIOB2
VCCMSSIOB2
U20
I2C_1_SCL/GPIO_31
I2C_1_SCL/GPIO_31
U21
I2C_0_SCL/GPIO_23
I2C_0_SCL/GPIO_23
U22
GND
GND
V1
GPIO_0/IO47RSB4V0
GPIO_0/IO56RSB4V0
V2
GPIO_6/IO41RSB4V0
GPIO_6/IO50RSB4V0
V3
GPIO_9/IO38RSB4V0
GPIO_9/IO47RSB4V0
V4
MAC_MDIO/IO49RSB4V0
MAC_MDIO/IO58RSB4V0
V5
MAC_RXD[0]/IO54RSB4V0
MAC_RXD[0]/IO63RSB4V0
V6
GND
GND
V7
SDD0
SDD0
V8
ABPS1
ABPS1
V9
ADC2
ADC2
V10
VCC33ADC0
VCC33ADC0
V11
ADC6
ADC6
V12
ADC5
ADC5
V13
ABPS5
ABPS5
V14
NC
ADC8
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
5- 60
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
FG484
Pin Number
A2F200 Function
A2F500 Function
V15
NC
GND33ADC2
V16
NC
NC
V17
GND
GND
V18
SPI_0_DI/GPIO_17
SPI_0_DI/GPIO_17
V19
SPI_1_DI/GPIO_25
SPI_1_DI/GPIO_25
V20
UART_1_TXD/GPIO_28
UART_1_TXD/GPIO_28
V21
I2C_0_SDA/GPIO_22
I2C_0_SDA/GPIO_22
V22
I2C_1_SDA/GPIO_30
I2C_1_SDA/GPIO_30
W1
GPIO_2/IO45RSB4V0
GPIO_2/IO54RSB4V0
W2
GPIO_7/IO40RSB4V0
GPIO_7/IO49RSB4V0
W3
GND
GND
W4
MAC_CRSDV/IO51RSB4V0
MAC_CRSDV/IO60RSB4V0
W5
MAC_TXD[1]/IO55RSB4V0
MAC_TXD[1]/IO64RSB4V0
W6
NC
SDD2
W7
GNDA
GNDA
W8
TM0
TM0
W9
ABPS2
ABPS2
W10
GND33ADC0
GND33ADC0
W11
VCC15ADC1
VCC15ADC1
W12
ABPS6
ABPS6
W13
NC
CM4
W14
NC
ABPS9
W15
NC
VCC33ADC2
W16
GNDA
GNDA
W17
PU_N
PU_N
W18
GNDSDD1
GNDSDD1
W19
SPI_0_CLK/GPIO_18
SPI_0_CLK/GPIO_18
W20
GND
GND
W21
SPI_1_SS/GPIO_27
SPI_1_SS/GPIO_27
W22
UART_1_RXD/GPIO_29
UART_1_RXD/GPIO_29
Y1
GPIO_3/IO44RSB4V0
GPIO_3/IO53RSB4V0
Y2
VCCMSSIOB4
VCCMSSIOB4
Y3
GPIO_15/IO34RSB4V0
GPIO_15/IO43RSB4V0
Y4
MAC_TXEN/IO52RSB4V0
MAC_TXEN/IO61RSB4V0
Y5
VCCMSSIOB4
VCCMSSIOB4
Y6
GNDSDD0
GNDSDD0
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
R ev i si o n 1 0
5- 61
Pin Descriptions
FG484
Pin Number
A2F200 Function
A2F500 Function
Y7
CM0
CM0
Y8
GNDTM0
GNDTM0
Y9
ADC0
ADC0
Y10
VCC15ADC0
VCC15ADC0
Y11
ABPS7
ABPS7
Y12
TM3
TM3
Y13
NC
ABPS8
Y14
NC
GND33ADC2
Y15
NC
VCC15ADC2
Y16
VCCMAINXTAL
VCCMAINXTAL
Y17
SDD1
SDD1
Y18
PTEM
PTEM
Y19
VCC33A
VCC33A
Y20
SPI_0_SS/GPIO_19
SPI_0_SS/GPIO_19
Y21
VCCMSSIOB2
VCCMSSIOB2
Y22
UART_0_TXD/GPIO_20
UART_0_TXD/GPIO_20
Note: Shading denotes pins that do not have completely identical functions from density to density. For
example, the bank assignment can be different for an I/O, or the function might be available only
on a larger density device.
5- 62
R ev i sio n 1 0
6 – Datasheet Information
List of Changes
The following table lists critical changes that were made in each revision of the SmartFusion datasheet.
Revision
Revision 10
(January 2013)
Changes
Page
The "SmartFusion cSoC Family Product Table" section has been updated to specify
that External Memory Controller support for A2F060-TQ144 is not available (SAR
41555).
II
The following Note was added to the "Package I/Os: MSS + FPGA I/Os" table (SAR
41027): "There are no LVTTL capable direct inputs available on A2F060 devices."
III
The "Product Ordering Codes" section has been updated to mention "Y" as "Blank"
mentioning "Device Does Not Include License to Implement IP Based on the
Cryptography Research, Inc. (CRI) Patent Portfolio" (SAR 43218).
VI
Added a note to Table 2-3 • Recommended Operating Conditions5,6 (SAR 43428):
The programming temperature range supported is Tambient = 0°C to 85°C.
2-3
Statements about the state of the I/Os during programming were updated in the
following sections: "I/O Power-Up and Supply Voltage Thresholds for Power-On
Reset (Commercial and Industrial)" and "User I/O Naming Conventions" (SAR
43380).
2-4, 5-7
In Table 2-4 • FPGA and Embedded Flash Programming, Storage and Operating
Limits, the upper value of temperature ranges was corrected from "Min." to "Max."
(SAR 41826).
2-4
Information for A2F200M3F-CS288 was added to Table 2-6 • Package Thermal
Resistance. The die size column was removed (SARs 41828, 42168).
2-7
Also added details for A2F200M3F-PQG208I (SAR 35728).
Added the following note to Table 2-65 • LVDS and Table 2-68 • LVPECL: "The above
mentioned timing parameters correspond to 24mA drive strength." (SAR 43457)
2-41,
2-43
The note in Table 2-86 • SmartFusion CCC/PLL Specification referring the reader to
SmartGen was revised to refer instead to the online help associated with the core
(SAR 34816).
2-63
The SRAM collision data in Table 2-87 • RAM4K9 and Table 2-88 • RAM512X18 was
updated (SAR 38583).
2-69,
2-70
The maximum input bias current for comparators 1, 3, 5, 7, and 9, in Table 2-98 •
Comparator Performance Specifications, was revised from 60 to 100 nA (SAR
36008).
2-84
Corrected the Start-up time unit from "ms" to "µs" in Table 2-100 • Voltage Regulator
(SAR 39395).
2-87
Added the "References" section for "SmartFusion Development Tools" (SAR 43460).
3-6
Updated the "References" section for Programming (SAR 43304). Added the
"Application Notes on IAP Programming Technique" section (SAR 43458).
4-9
R ev i si o n 1 0
6 -1
Datasheet Information
Revision
Revision 10
(continued)
Changes
Page
A note was added to the "Supply Pins" table, referring to the SmartFusion cSoC
Board Design Guidelines application note for details on VCCPLLx capacitor
recommendations (SAR 42183).
5-1
In the "Supply Pins" section, the VPP capacitor value section has been modified to:
"For proper programming, 0.01μF, and 0.1μF to 1μF capacitors, (both rated at 16 V)
are to be connected in parallel across VPP and GND, and positioned as close to the
FPGA pins as possible." (SAR 43569).
5-1
In the "User Pins" section, added description ’These pins are located in Bank-2
(GPIO_16 to GPIO_31) for A2F060, A2F200, and A2F500 devices.’ for GPIO_x (SAR
28595).
5-6
Updated the MAINXIN and MAINXOUT pin descriptions in the "Special Function Pins"
section to read "If an external RC network or clock input is used, the RC components
are connected to the MAINXIN pin, with MAINXOUT left floating. When the main
crystal oscillator is not being used, MAINXIN and MAINXOUT pins can be left
floating." (SAR 42807).
5-8
Live at Power-Up (LAPU) has been replaced with ’Instant On’.
NA
Revision 9
The number of signal conditioning blocks (SCBs) for A2F500 in the "SmartFusion
(September 2012) cSoC Family Product Table" was corrected to 4. Previously it had incorrectly been
listed as 2 (SAR 39536).
II
The "Product Ordering Codes" section was revised to clarify that only one eNVM size
for each device is currently available (SAR 40333).
VI
Information pertaining to analog I/Os was added to the "Specifying I/O States During
Programming" section on page 1-3 (SAR 34836).
1-3
The formulas in the table notes for Table 2-29 • I/O Weak Pull-Up/Pull-Down
Resistances were corrected (SAR 34757).
2-27
Maximum values for VIL and VIH were corrected in LVPECL Table 2-66 • Minimum
and Maximum DC Input and Output Levels (SAR 37695).
2-43
Minimum pulse width High and Low values were added to the tables in the "Global
Tree Timing Characteristics" section. The maximum frequency for global clock
parameter was removed from these tables because a frequency on the global is only
an indication of what the global network can do. There are other limiters such as the
SRAM, I/Os, and PLL. SmartTime software should be used to determine the design
frequency (SAR 29270).
2-59
The temperature range for accuracy in Table 2-83 • Electrical Characteristics of the
RC Oscillator was changed from "0°C to 85°C" to "–40°C to 100°C" (SAR 33670). The
units for jitter were changed from ps to ps RMS (SAR 34270).
2-61
In Table 2-84 • Electrical Characteristics of the Main Crystal Oscillator, the output jitter
for the 10 MHz crystal was corrected from 50 ps RMS to 1 ns RS (SAR 32939).
Values for the startup time of VILXTAL were added (SAR 25248).
2-62
In Table 2-85 • Electrical Characteristics of the Low Power Oscillator, output jitter was
changed from 50 ps RMS to 30 ps RMS (SAR 32939). A value for ISTBXTAL standby
current was added (SAR 25249). Startup time for a test load of 30 pF was added
(SAR 27436).
2-62
6- 2
R ev isio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Revision
Revision 9
(continued)
Changes
Page
The following note was added to Table 2-86 • SmartFusion CCC/PLL Specification in
regard to delay increments in programmable delay blocks (SAR 34816):
2-63
"When the CCC/PLL core is generated by Microsemi core generator software, not all
delay values of the specified delay increments are available. Refer to SmartGen
online help for more information."
Revision 8
(March 2012)
Figure 2-36 • FIFO Read and Figure 2-37 • FIFO Write have been added (SAR
34851).
2-72
Information regarding the MSS resetting itself after IAP of the FPGA fabric was added
to the "Reprogramming the FPGA Fabric Using the Cortex-M3" section (SAR 37970).
4-8
Instructions for unused VCC33ADCx pins were revised in "Supply Pins" (SAR 41137).
5-1
Libero IDE was changed to Libero SoC throughout the document (SAR 40264).
N/A
In the "Analog Front-End (AFE)" section, the resolution for the first-order sigma delta
DAC was corrected from 12-bit to "8-bit, 16-bit, or 24-bit." The same correction was
made in the "SmartFusion cSoC Family Product Table" (SAR 36541).
I, II
The "SmartFusion cSoC Family Product Table" was revised to break out the features
by package as well as device.
II
The table now indicates that only one SPI is available for the PQ208 package in
A2F200 and A2F500, and in the TQ144 package for A2F060 (SAR 33477).
The EMC address bus size has been corrected to 26 bits (SAR 35664).
The "SmartFusion cSoC Device Status" table was revised to change the CS288
package for A2F200 and A2F500 from preliminary to production status (SAR 37811).
III
TQ144 package information for A2F060 was added to the "Package I/Os: MSS +
FPGA I/Os" table, "SmartFusion cSoC Device Status" table, "Product Ordering
Codes", and "Temperature Grade Offerings" table (SAR 36246).
III, VI
Table 1 • SmartFusion cSoC Package Sizes Dimensions is new (SAR 31178).
III
The Halogen-Free Packaging code (H) was removed from the "Product Ordering
Codes" table (SAR 34017).
VI
The "Specifying I/O States During Programming" section is new (SAR 34836).
1-3
The reference to guidelines for global spines and VersaTile rows, given in the "Global
Clock Dynamic Contribution—PCLOCK" section, was corrected to the "Device
Architecture" chapter in the SmartFusion FPGA Fabric User's Guide (SAR 34742).
2-15
The AC Loading figures in the "Single-Ended I/O Characteristics" section were
updated to match tables in the "Summary of I/O Timing Characteristics – Default I/O
Software Settings" section (SAR 34891).
2-30,
2-24
The following sentence was deleted from the "2.5 V LVCMOS" section (SAR 34799):
"It uses a 5 V–tolerant input buffer and push-pull output buffer."
2-32
In the SRAM "Timing Characteristics" tables, reference was made to a new
application note, Simultaneous Read-Write Operations in Dual-Port SRAM for FlashBased cSoCs and FPGAs, which covers these cases in detail (SAR 34874).
2-69
The note for Table 2-93 • Current Monitor Performance Specification was modified to
include the statement that the restriction on the TM pad being no greater than 10 mV
above the CM pad.is applicable only if current monitor is used (SAR 26373).
2-77
The unit "FR" in Table 2-97 • ABPS Performance Specifications and Table 2-99 •
Analog Sigma-Delta DAC, used to designate full-scale error, was changed to "FS"
and clarified with a table note (SAR 35342).
2-82,
2-85
R ev i si o n 1 0
6 -3
Datasheet Information
Revision
Revision 8
(continued)
Revision 7
(August 2011)
Changes
Page
The description of "In-application programming (IAP)" methodology was changed to
state the difference for A2F060 and A2F500 compared to A2F200 (SAR 37808).
4-7
The "Global I/O Naming Conventions" section is new (SARs 28996, 31147). The
description for IO "User Pins" was revised accordingly and moved out of the table and
into a new section: "User I/O Naming Conventions".
5-6, 5-6
The descriptions for "MAINXIN" and "MAINXOUT" were revised to state how they
should be handled if using an external RC network or clock input (SAR 32594).
5-8
The description and type was revised for the "MSS_RESET_N" pin (SAR 34133).
5-9
The "TQ144" section and pin table for A2F060 are new (SAR 36246).
5-18
The title of the datasheet was changed from SmartFusion Intelligent Mixed Signal
FPGAs to SmartFusion Customizable System-on-Chip (cSoC). Terminology
throughout was changed accordingly. The term cSoC defines a category of devices
that include at least FPGA fabric and a processor subsystem of some sort. It can also
include any of the following: analog, SerDes, ASIC blocks, customer specific IP, or
application-specific IP. SmartFusion is Microsemi’s first cSoC (SAR 33071).
N/A
The "SmartFusion cSoC Family Product Table" was revised to remove the note
stating that the A2F060 device is under definition and subject to change (SAR 33070).
A note was added for EMC, stating that it is not available on A2F500 for the PQ208
package (SAR 33041).
II
The "SmartFusion cSoC Device Status" table was revised. The status for A2F060
CS288 and FG256 moved from Advance to Preliminary. A2F200 PQ208 and A2F500
PQ208 moved from Advance to Production (SAR 33069).
III
The "Package I/Os: MSS + FPGA I/Os" table was revised. The number of direct
analog inputs for A2F060 packages increased from 6 to 11. The number of MSS I/Os
for the A2F060 FG256 package increased from 25 to 26 (SAR 33070). A note was
added stating that EMC is not available for the A2F500 PQ208 package (SAR 33041).
III
The note associated with the "SmartFusion cSoC System Architecture" diagram was
corrected from "Architecture for A2F500" to "Architecture for A2F200" (SAR 32578).
V
The Licensed DPA Logo was added to the "Product Ordering Codes" section. The
trademarked Licensed DPA Logo identifies that a product is covered by a DPA
counter-measures license from Cryptography Research (SAR 32151).
VI
The "Security" section and "Secure Programming" section were updated to clarify that
although no existing security measures can give an absolute guarantee, SmartFusion
cSoCs implement the best security available in the industry (SAR 32865).
1-2, 4-9
Storage temperature, TSTG, and junction temperature, TJ, were added to Table 2-1 •
Absolute Maximum Ratings (SAR 30863).
2-1
AC/DC characteristics for A2F060 were added to the "SmartFusion DC and Switching
Characteristics" chapter (SAR 33132). The following tables were updated:
Table 2-14 • Different Components Contributing to Dynamic Power Consumption in
SmartFusion cSoCs
2-12
Table 2-15 • Different Components Contributing to the Static Power Consumption in
SmartFusion cSoCs
2-13
Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C,
VCC = 1.425 V
2-75
Table 2-99 • Analog Sigma-Delta DAC
Table 2-101 • SPI Characteristics
6- 4
R ev isio n 1 0
2-85
2-89
SmartFusion Customizable System-on-Chip (cSoC)
Revision
Revision 7
(continued)
Changes
Page
The following sentence was removed from the "I/O Power-Up and Supply Voltage
Thresholds for Power-On Reset (Commercial and Industrial)" section because it is
incorrect (SAR 31047):
2-4
"The many different supplies can power up in any sequence with minimized current
spikes or surges."
Table 2-8 • Quiescent Supply Current Characteristics was divided into two tables: one
for power supplies configurations and one for quiescent supply current. SoC mode
was added to both tables (SAR 26378) and VCOMPLAx was removed from Table 2-8
• Power Supplies Configuration (SAR 29591). Quiescent supply current values were
updated in Table 2-9 • Quiescent Supply Current Characteristics (SAR 33067).
2-10
The "Total Static Power Consumption—PSTAT" section was revised: "NeNVM-BLOCKS *
PDC4" was removed from the equation for PSTAT (SAR 33067).
2-14
Table 2-14 • Different Components Contributing to Dynamic Power Consumption in
SmartFusion cSoCs and Table 2-15 • Different Components Contributing to the Static
Power Consumption in SmartFusion cSoCs were revised to reflect updates in the
SmartFusion power calculator (SARs 26405, 33067).
2-12,
2-13
Table 2-82 • A2F060 Global Resource is new (SAR 33132).
2-61
Output duty cycle was corrected to 50% in Table 2-83 • Electrical Characteristics of
the RC Oscillator. It was incorrectly noted as 1% previously. Operating current for 3.3
domain was added (SAR 32940).
2-61
Table 2-86 • SmartFusion CCC/PLL Specification was revised to add information and
measurements regarding CCC output peak-to-peak period jitter (SAR 32996).
2-63
The port names in the SRAM "Timing Waveforms", SRAM "Timing Characteristics"
tables, Figure 2-38 • FIFO Reset, and the FIFO "Timing Waveforms" tables were
revised to ensure consistency with the software names (SAR 29991).
2-66 to
2-75
Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C,
VCC = 1.425 V was revised to correct the maximum frequencies (SAR 32410).
2-75
Table 2-96 • VAREF Stabilization Time was moved to the "SmartFusion DC and
Switching Characteristics" section from the SmartFusion Programmable Analog
User’s Guide because the information is extracted from characterization (SAR
24298).
2-81
The hysteresis section in Table 2-98 • Comparator Performance Specifications was
revised (SAR 33158).
2-84
The "SmartFusion Development Tools" was extensively updated (SAR 33216).
3-1
The text following Table 4-2 • JTAG Pin Descriptions was updated to add information
on control of the JTAGSEL pin. Manual jumpers on the evaluation and development
kits allow manual selection of this function for J-Link and ULINK debuggers (SAR
25592).
4-7
R ev i si o n 1 0
6 -5
Datasheet Information
Revision
Revision 7
(continued)
Changes
Page
Usage instructions, such as how to handle the pin when unused, were added for the
following supply pins (SAR 29769):
5-2
through
5-3
"VCC15A"
"VCC15ADC0" through "VCC15ADC2"
"VCC33ADC0" through "VCC33ADC2"
"VCC33AP"
"VCC33ADC2"
"VCCLPXTAL"
"VCCMAINXTAL"
"VCCMSSIOB2"
"VCCPLLx"
"VCCRCOSC"
"VDDBAT"
The "IO" description was revised to clarify the definitions of u, I/O pair, and w,
differential pair (SAR 31147). Information on configuration of unused I/Os (including
unused MSS I/Os, SAR 26891) was added (SAR 32643).
Usage instructions were added for the following pins (SAR 29769):
"MSS_RESET_N"
"TCK"
5-6
5-9
through
5-13
"TMS"
"TRSTB"
"MAC_CLK"
Package names used in the "Pin Assignment Tables" section were revised to match
standards given in Package Mechanical Drawings (SAR 27395).
5-18
The pin assignments for A2F060 for "TQ144" and "FG256" have been revised due to
the device status change from advance to preliminary (SAR 33068).
5-18,
5-39
The "TQ144" and "FG256" pin assignment sections previously compared functions
between A2F060/A2F200 devices in one table and A2F200/A2F500 in a separate
table. Functions for all three devices have now been combined into one table for each
package (SAR 33072).
Revision 6
(March 2011)
The "PQ208" pin table was revised for A2F500 to remove EMC functions, which are
not available for this device/package combination (SAR 33041).
5-32
The "PQ208" package was added to product tables and "Product Ordering Codes" for
A2F200 and A2F500 (SAR 31005).
III
The "Package I/Os: MSS + FPGA I/Os" table was revised to add the CS288 package
for A2F060 and the PQ208 package for A2F200 and A2F500. A row was added for
shared analog inputs (SAR 31034).
III
The "SmartFusion cSoC Device Status" table was updated (SAR 31084).
III
VCCESRAM was added to Table 2-1 • Absolute Maximum Ratings, Table 2-3 • 2-1, 2-3,
Recommended Operating Conditions5,6, Table 2-8 • Power Supplies Configuration, 2-10, 5-1
and the "Supply Pins" table (SAR 31035).
The following note was removed from Table 2-8 • Power Supplies Configuration (SAR
30984):
"Current monitors and temperature monitors should not be used when Power-Down
and/or Sleep mode are required by the application."
6- 6
R ev isio n 1 0
2-10
SmartFusion Customizable System-on-Chip (cSoC)
Revision
Revision 6
(continued)
Changes
Page
Dynamic power values were updated in the following tables. The table subtitles
changed where FPGA I/O banks were involved to note "I/O assigned to EMC I/O pins"
(SAR 30987).
2-10
Table 2-10 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software
Settings
2-11
Table 2-13 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software
Settings.
The "Timing Model" was updated (SAR 30986).
2-19
Values in the timing tables for the following sections were updated. Table subtitles
were updated for FPGA I/O banks to note "I/O assigned to EMC I/O pins" (SAR
30986).
"Overview of I/O Performance" section: Table 2-24, Table 2-25
"Detailed I/O DC Characteristics" section: Table 2-38, Table 2-39, Table 2-40,
Table 2-44, Table 2-45, Table 2-46, Table 2-50, Table 2-51, Table 2-52, Table 2-56,
Table 2-57, Table 2-58, Table 2-61, Table 2-62
"LVDS" section: Table 2-65
2-23
2-26
"Global Tree Timing Characteristics" section: Table 2-80, Table 2-81
2-40
2-42
2-59
The "PQ208" section and pin tables are new (SAR 31005).
5-32
Global clocks were removed from the A2F060 pin table for the "CS288" and "FG256"
packages, resulting in changed function names for affected pins (SAR 31033).
5-40
Table 2-2 • Analog Maximum Ratings was revised. The recommended CM[n] pad
Revision 5
(December 2010) voltage (relative to ground) was changed from –11 to –0.3 (SAR 28219).
2-2
Table 2-7 • Temperature and Voltage Derating Factors for Timing Delays was revised
to change the values for 100ºC.
2-9
Power-down and Sleep modes, and all associated notes, were removed from
Table 2-8 • Power Supplies Configuration (SAR 29479). IDC3 and IDC4 were
renamed to IDC1 and IDC2 (SAR 29478). These modes are no longer supported. A
note was added to the table stating that current monitors and temperature monitors
should not be used when Power-down and/or Sleep mode are required by the
application.
2-10
The "Power-Down and Sleep Mode Implementation" section was deleted (SAR
29479).
N/A
Values for PAC9 and PAC10 for LVDS and LVPECL were revised in Table 2-10 •
Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings and
Table 2-12 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software
Settings*.
2-10,
2-11
Values for PAC1 through PAC4, PDC1, and PDC2 were added for A2F500 in
Table 2-14 • Different Components Contributing to Dynamic Power Consumption in
SmartFusion cSoCs and Table 2-15 • Different Components Contributing to the Static
Power Consumption in SmartFusion cSoCs
2-12,
2-13
The equation for "Total Dynamic Power Consumption—PDYN" in "SoC Mode" was
revised to add PMSS. The "Microcontroller Subsystem Dynamic Contribution—PMSS"
section is new (SAR 29462).
2-14,
2-18
Information in Table 2-24 • Summary of I/O Timing Characteristics—Software Default
Settings (applicable to FPGA I/O banks) and Table 2-25 • Summary of I/O Timing
Characteristics—Software Default Settings (applicable to MSS I/O banks) was
updated.
2-25
"LVPECL" section: Table 2-68
R ev i si o n 1 0
6 -7
Datasheet Information
Revision
Revision 5
(continued)
Changes
Page
Available values for the Std. speed were added to the timing tables from Table 2-38 •
3.3 V LVTTL / 3.3 V LVCMOS High Slew to Table 2-92 • JTAG 1532 (SAR 29331).
2-31 to
2-76
One or more values changed for the –1 speed in tables covering 3.3 V LVCMOS,
2.5 V LVCMOS, 1.8 V LVCMOS, 1.5 V LVCMOS, Combinatorial Cell Propagation
Delays, and A2F200 Global Resources.
Table 2-80 • A2F500 Global Resource is new.
2-60
Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C,
VCC = 1.425 V was revised (SAR 27585).
2-75
The programmable analog specifications tables were revised with updated
information.
2-77 to
2-87
Table 4-1 • Supported JTAG Programming Hardware was revised by adding a note to
indicate "planned support" for several of the items in the table.
4-7
The note on JTAGSEL in the "In-System Programming" section was revised to state
that SoftConsole selects the appropriate TAP controller using the CTXSELECT JTAG
command. When using SoftConsole, the state of JTAGSEL is a "don't care" (SAR
29261).
4-7
The "CS288" and "FG256" pin tables for A2F060 are new, comparing the A2F060
function with the A2F200 function (SAR 29353).
5-23
The "Handling When Unused" column was removed from the "FG256" pin table for
A2F200 and A2F500 (SAR 29691).
5-39
Revision 4
Table 2-8 • Power Supplies Configuration was revised. VCCRCOSC was moved to a
(September 2010) column of its own with new values. VCCENVM was added to the table. Standby mode
for VJTAG and VPP was changed from 0 V to N/A. "Disable" was changed to "Off" in
the eNVM column. The column for RCOSC was deleted.
2-10
The "Power-Down and Sleep Mode Implementation" section was revised to include
VCCROSC.
2-11
Revision 3
The "I/Os and Operating Voltage" section was revised to list "single 3.3 V power
(September 2010) supply with on-chip 1.5 V regulator" and "external 1.5 V is allowed" (SAR 27663).
I
The CS288 package was added to the "Package I/Os: MSS + FPGA I/Os" table (SAR III, VI, VI
27101), "Product Ordering Codes" table, and "Temperature Grade Offerings" table
(SAR 27044). The number of direct analog inputs for the FG256 package in A2F060
was changed from 8 to 6.
Two notes were added to the "SmartFusion cSoC Family Product Table" indicating
limitations for features of the A2F500 device:
II
Two PLLs are available in CS288 and FG484 (one PLL in FG256).
[ADCs, DACs, SCBs, comparators, current monitors, and bipolar high voltage
monitors are] Available on FG484 only. FG256 and CS288 packages offer the same
programmable analog capabilities as A2F200.
Table cells were merged in rows containing the same values for easier reading (SAR
24748).
The security feature option was added to the "Product Ordering Codes" table.
6- 8
R ev isio n 1 0
VI
SmartFusion Customizable System-on-Chip (cSoC)
Revision
Revision 3
(continued)
Changes
Page
In Table 2-3 • Recommended Operating Conditions5,6, the VDDBAT recommended
operating range was changed from "2.97 to 3.63" to "2.7 to 3.63" (SAR 25246).
Recommended operating range was changed to "3.15 to 3.45" for the following
voltages:
2-3
VCC33A
VCC33ADCx
VCC33AP
VCC33SDDx
VCCMAINXTAL
VCCLPXTAL
Two notes were added to the table (SAR 27109):
1. The following 3.3 V supplies should be connected together while following proper
noise filtering practices: VCC33A, VCC33ADCx, VCC33AP, VCC33SDDx,
VCCMAINXTAL, and VCCLPXTAL.
2. The following 1.5 V supplies should be connected together while following proper
noise filtering practices: VCC, VCC15A, and VCC15ADCx.
In Table 2-3 • Recommended Operating Conditions5,6, the description for
VCCLPXTAL was corrected to change "32 Hz" to "32 KHz" (SAR 27110).
2-3
The "Power Supply Sequencing Requirement" section is new (SAR 27178).
2-4
Table 2-8 • Power Supplies Configuration was revised to change most on/off entries
to voltages. Note 5 was added, stating that "on" means proper voltage is applied. The
values of 6 µA and 16 µA were removed for IDC1 and IDC2 for 3.3 V. A note was
added for IDC1 and IDC2: "Power mode and Sleep mode are consuming higher
current than expected in the current version of silicon. These specifications will be
updated when new version of the silicon is available" (SAR 27926).
2-10
The "Power-Down and Sleep Mode Implementation" section is new (SAR 27178).
2-11
A note was added to Table 2-86 • SmartFusion CCC/PLL Specification, pertaining to
fout_CCC, stating that "one of the CCC outputs (GLA0) is used as an MSS clock and is
limited to 100 MHz (maximum) by software" (SAR 26388).
2-63
Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C,
VCC = 1.425 V was revised. Values were included for A2F200 and A2F500, for –1
and Std. speed grades. A note was added to define 6:1:1:1 and 5:1:1:1 (SAR 26166).
2-75
The units were corrected (mV instead of V) for input referred offset voltage,
GDEC[1:0] = 00 in Table 2-97 • ABPS Performance Specifications (SAR 25381).
2-82
The test condition values for operating current (ICC33A, typical) were changed in
Table 2-100 • Voltage Regulator (SAR 26465).
2-87
Figure 2-46 • Typical Output Voltage was revised to add legends for the three curves,
stating the load represented by each (SAR 25247).
2-88
The "SmartFusion Programming" chapter was moved to this document from the
SmartFusion Subsystem Microcontroller User’s Guide (SAR 26542). The "Typical
Programming and Erase Times" section was added to this chapter.
4-7
Figure 4-1 • TRSTB Logic was revised to change 1.5 V to "VJTAG (1.5 V to 3.3 V
nominal)" (SAR 24694).
4-8
R ev i si o n 1 0
6 -9
Datasheet Information
Revision
Revision 3
(continued)
Changes
Two notes were added to the "Supply Pins" table (SAR 27109):
Page
5-1
1. The following supplies should be connected together while following proper noise
filtering practices: VCC33A, VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL,
and VCCLPXTAL.
2. The following 1.5 V supplies should be connected together while following proper
noise filtering practices: VCC, VCC15A, and VCC15ADCx.
The descriptions for the "VCC33N", "NCAP", and "PCAP" pins were revised to include 5-2, 5-9,
information on what to do if analog SCB features and SDDs are not used (SAR
5-9
26744).
Revision 2
(May 2010)
Revision 1
(March 2010)
6- 10
Information was added to the "User Pins" table regarding tristating of used and
unused GPIO pins. The IO portion of the table was revised to state that unused I/O
pins are disabled by Libero IDE software and include a weak pull-up resistor (SAR
26890). Information was added regarding behavior of used I/O pins during power-up.
5-6
The type for "EMC_RW_N" was changed from In/out to Out (SAR 25113).
5-12
A note was added to the "Analog Front-End (AFE)" table stating that unused analog
inputs should be grounded (SAR 26744).
5-14
The "TQ144" section is new, with pin tables for A2F200 and A2F500 (SAR 27044).
5-18
The "FG256" pin table was replaced and now includes "Handling When Unused"
information (SAR 27709).
5-39
Embedded nonvolatile flash memory (eNVM) was changed from "64 to 512 Kbytes" to
"128 to 512 Kbytes" in the "Microcontroller Subsystem (MSS)" section and
"SmartFusion cSoC Family Product Table" (SAR 26005).
I, II
The main oscillator range of values was changed to "32 KHz to 20 MHz" in the
"Microcontroller Subsystem (MSS)" section and the "SmartFusion cSoC Family
Product Table" (SAR 24906).
I, II
The value for tPD was changed from 50 ns to 15 ns for the high-speed voltage
comparators listed in the "Analog Front-End (AFE)" section (SAR 26005).
I
The number of PLLs for A2F200 was changed from 2 to 1 in the "SmartFusion cSoC
Family Product Table" (SAR 25093).
II
Values for direct analog input, total analog input, and total I/Os were updated for the
FG256 package, A2F060, in the "Package I/Os: MSS + FPGA I/Os" table. The Max.
column was removed from the table (SAR 26005).
III
The Speed Grade section of the "Product Ordering Codes" table was revised
(SAR 25257).
VI
The "Product Ordering Codes" table was revised to add "blank" as an option for leadfree packaging and application (junction temperature range).
VI
Table 2-3 • Recommended Operating Conditions5,6 was revised. Ta (ambient
temperature) was replaced with TJ (junction temperature).
2-3
PDC5 was deleted from Table 2-15 • Different Components Contributing to the Static
Power Consumption in SmartFusion cSoCs.
2-13
The formulas in the footnotes for Table 2-29 • I/O Weak Pull-Up/Pull-Down
Resistances were revised.
2-27
The values for input biased current were revised in Table 2-93 • Current Monitor
Performance Specification.
2-77
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Revision
Revision 0
(March 2010)
Changes
Page
The "Analog Front-End (AFE)" section was updated to change the throughput for 10bit mode from 600 Ksps to 550 Ksps.
I
The A2F060 device was added to product information tables.
N/A
The "Product Ordering Codes" table was updated to removed Std. speed and add
speed grade 1. Pre-production was removed from the application ordering code
category.
VI
The "SmartFusion cSoC Block Diagram" was revised.
IV
The "Datasheet Categories" section was updated, referencing the "SmartFusion
cSoC Block Diagram" table, which is new.
The "VCCI" parameter was renamed to "VCCxxxxIOBx."
1-4, IV
N/A
"Advanced I/Os" were renamed to "FPGA I/Os."
Generic pin names that represent multiple pins were standardized with a lower case x
as a placeholder. For example, VAREFx designates VAREF0, VAREF1, and VAREF2.
Modes were renamed as follows:
Operating mode was renamed to SoC mode.
32KHz Active mode was renamed to Standby mode.
Battery mode was renamed to Time Keeping mode.
Table entries have been filled with values as data has become available.
Table 2-1 • Absolute Maximum Ratings, Table 2-2 • Analog Maximum Ratings, and
Table 2-3 • Recommended Operating Conditions5,6 were revised extensively.
2-1
through
2-3
Device names were updated in Table 2-6 • Package Thermal Resistance.
2-7
Table 2-8 • Power Supplies Configuration was revised extensively.
2-10
Table 2-11 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software
Settings was revised extensively.
2-11
Removed "Example of Power Calculation."
N/A
Table 2-14 • Different Components Contributing to Dynamic Power Consumption in
SmartFusion cSoCs was revised extensively.
2-12
Table 2-15 • Different Components Contributing to the Static Power Consumption in
SmartFusion cSoCs was revised extensively.
2-13
The "Power Calculation Methodology" section was revised.
2-14
Table 2-83 • Electrical Characteristics of the RC Oscillator was revised extensively.
2-61
Table 2-85 • Electrical Characteristics of the Low Power Oscillator was revised
extensively.
2-62
The parameter tRSTBQ was changed to TC2CWRH in Table 2-87 • RAM4K9.
2-69
The 12-bit mode row for integral non-linearity was removed from Table 2-95 • ADC
Specifications. The typical value for 10-bit mode was revised. The table note was
punctuated correctly to make it clear.
2-80
Figure 37-34 • Write Access after Write onto Same Address, Figure 37-34 • Read
Access after Write onto Same Address, and Figure 37-34 • Write Access after Read
onto Same Address were deleted.
N/A
Table 2-100 • Voltage Regulator was revised extensively.
2-87
The "Serial Peripheral Interface (SPI) Characteristics" section and "Inter-Integrated
Circuit (I2C) Characteristics" section are new.
2-89,
2-91
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6- 11
Datasheet Information
Revision
Revision 0
(continued)
Changes
"SmartFusion Development Tools" section was replaced with new content.
Page
3-1
The pin description tables were revised by adding additional pins to reflect the pinout
for A2F500.
5-1
through
5-16
The descriptions for "GNDSDD1" and "VCC33SDD1" were revised.
5-1, 5-2
The description for "VCC33A" was revised.
5-2
The pin tables for the "FG256" and "FG484" were replaced with tables that compare
pin functions across densities for each package.
5-39
Draft B
The "Digital I/Os" section was renamed to the "I/Os and Operating Voltage" section
(December 2009) and information was added regarding digital and analog VCC.
I
The "SmartFusion cSoC Family Product Table" and "Package I/Os: MSS + FPGA
I/Os" section were revised.
II
The terminology for the analog blocks was changed to "programmable analog,"
consisting of two blocks: the analog front-end and analog compute engine. This is
reflected throughout the text and in the "SmartFusion cSoC Block Diagram".
IV
The "Product Ordering Codes" table was revised to add G as an ordering code for
eNVM size.
VI
Timing tables were populated with information that has become available for speed
grade –1.
N/A
All occurrences of the VMV parameter were removed.
N/A
The SDD[n] voltage parameter was removed from Table 2-2 • Analog Maximum
Ratings.
2-2
Table 36-4 • Flash Programming Limits – Retention, Storage and Operating
Temperature was replaced with Table 2-4 • FPGA and Embedded Flash
Programming, Storage and Operating Limits.
2-4
The "Thermal Characteristics" section was revised extensively.
2-7
Table 2-8 • Power Supplies Configuration was revised significantly.
2-10
Table 2-14 • Different Components Contributing to Dynamic Power Consumption in
SmartFusion cSoCs and Table 2-15 • Different Components Contributing to the Static
Power Consumption in SmartFusion cSoCs were updated.
2-12
Figure 2-2 • Timing Model was updated.
2-19
The temperature associated with the reliability for LVTTL/LVCMOS in Table 2-34 • I/O
Input Rise Time, Fall Time, and Related I/O Reliability was changed from 110º to
100º.
2-29
The values in Table 2-78 • Combinatorial Cell Propagation Delays were updated.
2-57
Table 2-85 • Electrical Characteristics of the Low Power Oscillator is new. Table 2-84 •
Electrical Characteristics of the Main Crystal Oscillator was revised.
2-62
Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C,
VCC = 1.425 V and Table 2-91 • FlashROM Access Time, Worse Commercial Case
Conditions: TJ = 85°C, VCC = 1.425 V are new.
2-75
The performance tables in the "Programmable Analog Specifications" section were
revised, including new data available. Table 2-99 • Analog Sigma-Delta DAC is new.
2-77
The "256-Pin FBGA" table for A2F200 is new.
4-15
6- 12
R ev i sio n 1 0
SmartFusion Customizable System-on-Chip (cSoC)
Datasheet Categories
Categories
In order to provide the latest information to designers, some datasheet parameters are published before
data has been fully characterized from silicon devices. The data provided for a given device, as
highlighted in the "SmartFusion cSoC Device Status" table on page III, is designated as either "Product
Brief," "Advance," "Preliminary," or "Production." The definitions of these categories are as follows:
Product Brief
The product brief is a summarized version of a datasheet (advance or production) and contains general
product information. This document gives an overview of specific device and family information.
Advance
This version contains initial estimated information based on simulation, other products, devices, or speed
grades. This information can be used as estimates, but not for production. This label only applies to the
DC and Switching Characteristics chapter of the datasheet and will only be used when the data has not
been fully characterized.
Preliminary
The datasheet contains information based on simulation and/or initial characterization. The information is
believed to be correct, but changes are possible.
Production
This version contains information that is considered to be final.
Export Administration Regulations (EAR)
The products described in this document are subject to the Export Administration Regulations (EAR).
They could require an approved export license prior to export from the United States. An export includes
release of product or disclosure of technology to a foreign national inside or outside the United States.
Microsemi SoC Products Group Safety Critical, Life Support,
and High-Reliability Applications Policy
The SoC Products Group products described in this advance status document may not have completed
the SoC Products Group’s qualification process. Products may be amended or enhanced during the
product introduction and qualification process, resulting in changes in device functionality or
performance. It is the responsibility of each customer to ensure the fitness of any product (but especially
a new product) for a particular purpose, including appropriateness for safety-critical, life-support, and
other high-reliability applications. Consult the SoC Products Group’s Terms and Conditions for specific
liability exclusions relating to life-support applications. A reliability report covering all of the SoC Products
Group’s
products
is
available
on
the
SoC
Products
Group
website
at
http://www.microsemi.com/soc/documents/ORT_Report.pdf. Microsemi SoC Products Group also offers
a variety of enhanced qualification and lot acceptance screening procedures. Contact your local SoC
Products Group sales office for additional reliability information.
R ev i si o n 1 0
6- 13
Datasheet Information
6- 14
R ev i sio n 1 0
Microsemi Corporation (NASDAQ: MSCC) offers a comprehensive portfolio of semiconductor
solutions for: aerospace, defense and security; enterprise and communications; and industrial
and alternative energy markets. Products include high-performance, high-reliability analog and
RF devices, mixed signal and RF integrated circuits, customizable SoCs, FPGAs, and
complete subsystems. Microsemi is headquartered in Aliso Viejo, Calif. Learn more at
www.microsemi.com.
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo CA 92656 USA
Within the USA: +1 (949) 380-6100
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51700112-10/01.13
Datasheet Information
6- 16
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