CEP05N65/CEB05N65 CEF05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) CEP05N65 650V 2.4Ω 4.5A ID @VGS 10V CEB05N65 650V 2.4Ω 4.5A 10V CEF05N65 650V 2.4Ω 4.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed S CEF SERIES TO-220F ID IDM a Maximum Power Dissipation @ TC = 25 C e PD - Derate above 25 C Operating and Store Temperature Range TJ,Tstg TO-220F 650 Units V ±30 V A 4.5 4.5 d 18 18 d 84 40 W 0.32 W/ C 0.67 -55 to 150 A C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 1.5 3.8 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W Rev 3. 2009.Nov http://www.cetsemi.com Details are subject to change without notice . 1 Electrical Characteristics Parameter CEP05N65/CEB05N65 CEF05N65 Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 650 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 650V, VGS = 0V 25 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 2.4 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 2A Forward Transconductance gFS VDS = 40V, ID = 2A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Static Drain-Source On-Resistance 2 2 Dynamic Characteristics c VDS = 25V, VGS = 0V, f = 1.0 MHz 4 S 590 pF 85 pF 20 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 4.5A, VGS = 10V, RGEN = 25Ω 17 34 ns 16 32 ns 47 ns nC Turn-Off Fall Time tf 17.5 94 35 Total Gate Charge Qg 13 17 Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 4.5A, VGS = 10V ns 2 nC 5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b IS VSD VGS = 0V, IS = 2A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 1mH, IAS = 1.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 2 4.5 A 1.5 V 4 CEP05N65/CEB05N65 CEF05N65 9 5 VGS=10,8,7V ID, Drain Current (A) ID, Drain Current (A) 6 4 3 2 VGS=5V 1 0 0.0 5 10 15 20 25 TJ=125C 1 2 -55 C 3 4 5 6 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 600 400 Coss 200 Crss 0 5 10 15 20 25 2.2 1.9 ID=2A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 25 C 1.5 VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 3 VDS, Drain-to-Source Voltage (V) 800 1.2 4.5 30 1000 1.3 6 0 1200 0 7.5 -25 0 25 50 75 100 125 VGS=0V 10 1 10 0 10-1 0.4 150 0.7 1.0 1.3 1.7 2.0 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=480V ID=4.5A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP05N65/CEB05N65 CEF05N65 6 4 2 0 0 3 6 9 12 4 10 1 RDS(ON)Limit 1ms 10ms 10 10 15 2 100ms DC 0 TC=25 C TJ=175 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 0.1 -1 0.05 0.02 0.01 10 10 PDM t1 Single Pulse -2 -3 10 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3