MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE CM300DY-24A ¡IC ................................................................... 300A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm （13.7） （5.2）（8.5） 108 93±0.25 （7.5） （7.5） （7） （24） 15 30 E2 E2 6 E1 （20） 6 G2 C2E1 C1 （7） 17.5 G1 21.5 25 25 24 4-φ6.5 MOUNTING HOLES 7 18 14 4 TAB #110 t=0.5 2.8 E2 G2 14 E2 22.2 C2E1 LABEL C1 G1 E1 18 7.5 7 8.5 18 14 30 +1.0 –0.5 62 48 ±0.25 4 3-M6 NUTS CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — (Tj = 25°C, unless otherwise specified) Parameter ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG G-E Short C-E Short DC, TC = 80°C*1 Pulse Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Unit V V A A W °C °C Vrms N•m g (Tj = 25°C, unless otherwise specified) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance (Note 2) Pulse TC = 25°C*1 VCE = VCES, VGE = 0V Min. — Limits Typ. — Max. 1 IC = 30mA, VCE = 10V 6 7 8 V — — — — — — — — — — — — — — — — — 1.0 — 2.1 2.4 — — — 1350 — — — — — 9.0 — — — 0.02 — 0.5 3.0 — 47 4 0.9 — 550 180 600 350 250 — 3.8 0.066 0.12 — 16 µA Test conditions Parameter Thermal resistance Ratings 1200 ±20 300 600 300 600 1890 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C IC = 300A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 300A, VGE = 15V VCC = 600V, IC = 300A VGE = ±15V RG = 1.0Ω, Inductive load IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound Applied (1/2 module)*1,*2 Unit mA V nF nC ns ns µC V K/W Ω *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Feb. 2009 2 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25°C 15 13 500 12 400 300 11 200 10 100 9 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 20V 0 4 2 6 8 10 VGE = 15V 3 2 1 Tj = 25°C Tj = 125°C 0 0 100 200 300 400 500 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 7 8 6 IC = 600A IC = 300A 4 2 5 3 2 102 7 5 3 2 Tj = 25°C Tj = 125°C IC = 120A 0 6 8 10 12 14 16 18 101 20 0 1 2 3 4 5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 7 Cies 5 SWITCHING TIME (ns) 3 2 101 7 5 3 2 Coes 100 7 5 3 2 600 103 Tj = 25°C 102 CAPACITANCE Cies, Coes, Cres (nF) 4 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 600 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Cres td(off) tf td(on) 3 2 102 7 Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load tr 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 101 1 10 COLLECTOR-EMITTER VOLTAGE VCE (V) 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM300DY-24A TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c’) (ratio) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 7 5 3 2 102 trr Irr 7 5 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load 2 3 5 7 103 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse 7 5 TC = 25°C 3 Under the chip 2 10–1 10–1 7 5 3 2 7 5 3 2 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.066K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.12K/W –3 10 103 7 7 SWITCHING LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 102 5 3 2 5 Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on) 3 2 100 1 10 2 3 5 7 102 2 7 Esw(off) 5 3 2 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 Conditions: 7 VCC = 600V VGE = ±15V 3 RG = 1.0Ω Tj = 125°C 2 Inductive load C snubber at bus 101 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS (mJ/pulse) Esw(on) COLLECTOR CURRENT IC (A) 102 5 Err 7 5 3 2 100 1 10 Conditions: VCC = 600V VGE = ±15V 3 IC = 300A Tj = 125°C 2 Inductive load C snubber at bus 2 10 5 101 0 10 5 7 103 3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 7 7 5 3 2 TIME (s) EMITTER CURRENT IE (A) 101 10–2 2 3 5 7 102 2 3 5 3 2 Conditions: VCC = 600V VGE = ±15V IE = 300A Tj = 125°C Inductive load C snubber at bus 7 5 3 2 100 0 10 5 7 103 Err 101 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG (Ω) EMITTER CURRENT IE (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 300A VCC = 400V 16 VCC = 600V 12 8 4 0 0 400 800 1200 1600 2000 GATE CHARGE QG (nC) Feb. 2009 5