Transistors SMD Type NPN Transistors MMBTA42W (KMBTA42W) ■ Features ● Collector-emitter voltage VCE = 300V ● Collector current IC = 500mA ● NPN high voltage transistors 3 COLLECTOR 1 BASE 1 Base 2 Emitter 3 Collector 2 EMITTER ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 Emitter - Base Voltage VEBO 6 IC 500 Collector Current - Continuous Collector Power Dissipation mA PC 150 mW 550 ℃/W TJ 150 Tstg -65 to 150 Junction Temperature Storage Temperature Range V RθJA (Note.1) Thermal resi stance from junct ion to ambient (Note.1) Unit ℃ Note.1:Mounted on an FR4 PCB, single-sided copper, mini pad. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 300 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 300 Typ Max V 6 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current ICBO VCB= 200 V , IE= 0 100 Emitter cut-off current IEBO VEB= 6V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB=2mA 0.5 Base - emitter saturation voltage VBE(sat) IC=20 mA, IB=2mA 0.9 hFE(1) VCE= 10V, IC= 1mA 60 hFE(2) VCE= 10V, IC= 10mA 100 hFE(3) VCE= 10V, IC= 30mA 70 DC current gain Collector output capacitance Transition frequency Cob fT VCB= 20V, IE= 0,f=1MHz VCE= 20V, IC= 10mA,f=100MHz Unit V 200 3 50 nA pF MHz ■ Marking Marking 1D www.kexin.com.cn 1 Transistors SMD Type NPN Transistors MMBTA42W (KMBTA42W) ■ Typical Characterisitics 0.9 TJ = 25°C VCE ( SAT ) (V) VBE ( SAT ) (V) 0.8 1 TJ = 75°C 0.7 0.6 0.5 0.4 TJ = 125°C TJ = 150°C 0.3 0.2 0.001 IC/IB = 10 0.01 0.1 0.9 IC/IB = 10 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 IC, Collector Current (A) 200 VCE = 10V hFE TJ = 125°C 100 TJ = 75°C 50 TJ = 25°C 0 0.001 0.01 0.1 1 IC, Collector Current (A) Fig.3 Typical DC Current Gain vs Collector Current 2 www.kexin.com.cn TJ = 75°C TJ = 25°C 0.01 0.1 Fig.2 Typical Collector-Emitter Saturation Voltage C, Capacitance (pF) TJ = 150°C 150 TJ = 125°C IC, Collector Current (A) Fig.1 Typical Base-Emitter Saturation Voltage 250 TJ = 150°C 100 Ceb TA= 25°C 10 Ccb 1 0.2 2 20 VR, Reverse Voltage (V) Fig.4 Typical Capacitance