DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI RDS(ON) max ID max TA = +25°C 8mΩ @ VGS = -4.5V -14A V(BR)DSS -20V Features • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability • 9.8mΩ @ VGS = -2.5V -10A 13mΩ @ VGS = -1.8V -9.3A 17mΩ @ VGS = -1.5V -8.3A • • • Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • • Mechanical Data • • • Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) S Pin 1 • • • Load Switch Power Management Functions Drain POWERDI3333-8 S S G Gate D D D Source D Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number DMP2008UFG-7 DMP2008UFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION ADVANCE INFORMATION Product Summary S36 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) S36 POWERDI is a registered trademark of Diodes Incorporated DMP2008UFG Document number: DS35694 Rev. 14 - 2 1 of 6 www.diodes.com August 2014 © Diodes Incorporated DMP2008UFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION ADVANCE INFORMATION Characteristic Drain-Source Voltage Gate-Source Voltage (Note 5) Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C TC = +25°C Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 8) Avalanche Energy (Note 8) Symbol VDSS VGSS Value -20 ±8 Units V V ID -14 -11 -54 A IDM IS IAS EAS -80 -2.2 -15 -113 A A A mJ Value 2.4 41 52 137 3.0 -55 to +150 Units Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TC = +25°C (Note 5) (Note 6) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient PD RΘJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RΘJC TJ, TSTG W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 — — — — — — -1 ±100 µA VGS(th) Static Drain-Source On-Resistance RDS (ON) |Yfs| -0.4 — — — — — — — — — — 42 -1.0 8 9.8 13 17 — Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — — 6909 635 563 2.5 72 40 8.6 14.5 22 33 291 124 — — — — — — — — — — — — — — — — -0.7 -0.7 25 15 — — — — Forward Transfer Admittance DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -2.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time BODY DIODE CHARACTERISTICS Diode Forward Voltage VSD Reverse Recovery Time (Note 10) Reverse Recovery Charge (Note 10) trr Qrr Notes: V nA V mΩ S Test Condition VGS = 0V, ID = -250µA VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V VDS = VGS, ID = -250µA VGS = -4.5V, ID = -12A VGS = -2.5V, ID = -10A VGS = -1.8V, ID = -9.3A VGS = -1.5V, ID = -8.3A VDS = -5V, ID = -12A pF VDS = -10V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = -10V, ID = -12A ns VGS = -4.5V, VDD = -10V, RG = 6Ω, ID = -12A V V ns nC VGS = 0V, IS = -12A VGS = 0V, IS = -2A IF = -12A, di/dt = 100A/µs IF = -12A, di/dt = 100A/µs 5. AEC-Q101 VGS maximum is ±6.4V. 6. RΘJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RΘJC is guaranteed by design while RΘJA is determined by the user’s board design. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 8 .UIS in production with L = 1mH, TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated DMP2008UFG Document number: DS35694 Rev. 14 - 2 2 of 6 www.diodes.com August 2014 © Diodes Incorporated DMP2008UFG 50 30 VGS = 4.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 VDS = -5.0V VGS = 2.5V VGS = 2.0V VGS = 1.8V 30 VGS = 1.5V 20 10 20 15 10 TA = 150 °C TA = 125 °C 5 VGS = 1.2V TA = 85°C TA = 25°C TA = -55° C 0 0.5 1.0 1.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0.04 0.03 0.02 0.01 0 0 2.0 0 10 20 30 40 -ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.5 1.0 1.5 -V GS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2.0 0.030 0.025 0.020 ID = -12A TA = 125°C 0.015 0.010 ID = -12A TA = 25°C 0.005 50 0 1 5 6 7 3 4 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 8 2.2 0.020 2.0 VGS = -4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON),DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) ADVANCE INFORMATION ADVANCE INFORMATION 40 0.016 0.012 TA = 125°C 0.008 TA = 150°C TA = 85° C TA = 25°C TA = -55° C 0.004 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Temperature 30 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Fig. 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated DMP2008UFG Document number: DS35694 Rev. 14 - 2 3 of 6 www.diodes.com August 2014 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE(V) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.2 0.015 VGS = -2.5V ID = -10A 0.010 VGS = -4.5V ID = -12A 0.005 1.0 0.8 0.6 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 On-Resistance Variation with Temperature 100,000 30 CT, JUNCTION CAPACITANCE (pF) f = 1MHz -IS, SOURCE CURRENT (A) 25 20 15 10 5 0 0 0.4 0.6 0.8 1.0 0.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 10,000 Ciss 1,000 Coss Crss 100 1.2 0 20 RDS(on) Limited 4.0 -ID, DRAIN CURRENT (A) 3.5 3.0 2.5 2.0 1.5 1.0 10 DC 1 PW = 10s PW = 1s 0.1 TJ(max) = 150°C PW = 100ms PW = 10ms PW = 1ms PW = 100µs TA = 25°C VGS = -8V Single Pulse DUT on 1 * MRP Board 0.5 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance 100 4.5 -VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION ADVANCE INFORMATION DMP2008UFG 0.020 0 10 20 30 40 50 60 70 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics 80 0.01 0.01 0.1 1 10 -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated DMP2008UFG Document number: DS35694 Rev. 14 - 2 4 of 6 www.diodes.com August 2014 © Diodes Incorporated DMP2008UFG r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION ADVANCE INFORMATION 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 125°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A A3 A1 D D2 L (4x) 1 Pin 1 ID 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X G Y2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 5 8 G1 Y1 Y 1 4 Y3 X2 C Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 POWERDI is a registered trademark of Diodes Incorporated DMP2008UFG Document number: DS35694 Rev. 14 - 2 5 of 6 www.diodes.com August 2014 © Diodes Incorporated DMP2008UFG ADVANCE INFORMATION ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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