DMP1011UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION Product Summary (Typ. @ VGS = -4.5V, TA Features = +25°C) VDSS RDS(on) Qg Qgd ID -8V 8.2mΩ 8.1nC 1.8nC -10A Description rd This 3 generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area. LD-MOS Technology with the Lowest Figure of Merit: -RDS(on) = 8.2mΩ to Minimize On-State Losses -Qg = 8.1nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential CSP with Footprint 1.5mm × 1.5mm Height = 0.60mm for Low Profile ESD = 6kV HBM Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data DC-DC Converters Case: U-WLB1515-9 Battery Management Terminal Connections: See Diagram Below Load Switch U-WLB1515-9 Top-View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number DMP1011UCB9-7 Notes: Case U-WLB1515-9 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-WLB1515-9 NX = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: B = 2014) M or M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2012 Z Jan 1 2013 A Feb 2 DMP1011UCB9 Document number: DS37852 Rev. 2 - 2 Mar 3 2014 B Apr 4 May 5 2015 C Jun 6 1 of 6 www.diodes.com 2016 D Jul 7 Aug 8 2017 E Sep 9 Oct O 2018 F Nov N Dec D July 2015 © Diodes Incorporated DMP1011UCB9 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Steady State Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%) Continuous Source Pin Current (Note 6) Pulsed Source Pin Current (Pulse duration 10µs, duty cycle ≤1%) Continuous Drain Current (Note 6) VGS = -4.5V Value -8 -6 -10 -8 A -7.4 -6.0 -50 -2 -15 -0.5 ID IDM IS ISM IG Continuous Gate Current Units V V A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics Symbol PD PD RθJA RθJA TJ, TSTG Value 0.89 1.57 +142.1 +80.5 -55 to +150 Units W W °C/W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Gate to Source Voltage Symbol Min Typ Max Unit Test Condition BVDSS BVSGS — — — — — V V VGS = 0V, ID = -250μA VDS = 0V, ID = -250μA IDSS -8 -6 — -1 μA VDS = -4.0V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS — — -100 nA VGS = -4.0V, VDS = 0V VGS(th) -0.4 RDS (ON) — |Yfs| VSD Qrr trr — — — — -1.1 10 13 14 — -1 — — V Static Drain-Source On-Resistance -0.8 8.2 10 11 16.8 -0.7 6.3 18.5 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2A VGS = -3.0V, ID = -2A VGS = -2.5V, ID = -2A VDS = -4V, ID = -2A VGS = 0V, IS = -2A Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — 817 595 269 1.9 8.1 0.9 1.8 6.2 22.6 30.1 22.7 1,060 770 350 — 10.5 — — 10 — 48 — Zero Gate Voltage Drain Current Forward Transfer Admittance Diode Forward Voltage (Note 6) Reverse Recovery Charge Reverse Recovery Time DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Series Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: @TC = +25°C mΩ S V nC ns pF pF pF Ω nC nC nC ns ns ns ns Vdd = -5V, IF = -2A, di/dt = 200A/μs VDS = -4V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -4V, ID = -2A VDD = -4V, VGS = -4.5V, IDS = -2A, RG = 10Ω, 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Device mounted on FR4 material with 1-inch2 (6.45cm2), 2oz (0.071mm thick) Cu. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP1011UCB9 Document number: DS37852 Rev. 2 - 2 2 of 6 www.diodes.com July 2015 © Diodes Incorporated DMP1011UCB9 10 20.0 VDS = -5.0V 18.0 VGS = -4.5V VGS = -4.0V 14.0 VGS = -2.5V 12.0 VGS = -2.0V VGS = -1.5V 10.0 8.0 6.0 4.0 TA = 150 C TA = 125C 4 TA = 85C TA = 25C TA = -55C VGS = -1.2V VGS = -1.0V 0.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0 2 0 0.1 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2 2.5 0.09 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 6 2 2.0 0.08 0.07 0.06 0.05 ID = -2.0A 0.04 0.03 0.02 2 VGS = -2.5V ID = -1A 1.5 1 VGS = -4.5V ID = -3A 0.5 0.01 0 -50 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 3 Typical Transfer Characteristic -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 4 On-Resistance Variation with Temperature 6 10 1 8 0.8 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16.0 -ID = 250µA -ID = 1mA 0.6 0.4 0.2 -50 6 TA = 150C T A = 125C 4 TA = 85C TA = 25 C TA = -55C 2 0 -25 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Figure 5 Gate Threshold Variation vs. Ambient Temperature DMP1011UCB9 Document number: DS37852 Rev. 2 - 2 150 3 of 6 www.diodes.com 0 0.3 0.6 0.9 1.2 1.5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 6 Diode Forward Voltage vs. Current July 2015 © Diodes Incorporated DMP1011UCB9 10000 4.5 1000 -VGS, GATE-SOURCE VOLTAGE (V) C T, JUNCTION CAPACITANCE (pF) 4 Ciss Coss Crss 100 3.5 3 0 100 1 2 3 4 5 6 7 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 7 Typical Junction Capacitance 8 VDS = -4V ID = -2A 2.5 2 1.5 1 0.5 0 10 ID, DRAIN CURRENT (A) 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Figure 8 Gate-Charge Characteristics 10 RDS(on) Limited 10 DC PW = 10s PW = 1s 1 PW = 100ms PW = 10ms PW = 1ms 0.1 PW = 100µs TJ(max) = 150°C TA = 25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.01 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 SOA, Safe Operation Area 10 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION f = 1MHz D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 138°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.0001 0.001 DMP1011UCB9 Document number: DS37852 Rev. 2 - 2 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Figure 10 Transient Thermal Resistance 4 of 6 www.diodes.com 100 1000 10000 July 2015 © Diodes Incorporated DMP1011UCB9 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION D 9x-Ø b Pin #1 ID U-WLB1515-9 e E e e A3 A2 e Dim Min Max Typ A 0.60 A2 0.36 0.36 A3 0.020 0.030 0.025 b 0.22 0.32 0.27 D 1.47 1.50 1.49 E 1.47 1.50 1.49 e 0.50 All Dimensions in mm A SEATING PLANE Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. D Dimensions C1 C C1 C2 D C Value (in mm) 0.50 1.00 1.00 0.25 C C2 DMP1011UCB9 Document number: DS37852 Rev. 2 - 2 5 of 6 www.diodes.com July 2015 © Diodes Incorporated DMP1011UCB9 IMPORTANT NOTICE NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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