CDM4-650 SURFACE MOUNT SILICON N-CHANNEL MEDIUM POWER MOSFET 4.0 AMP, 650 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM4-650 is a 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency. MARKING: FULL PART NUMBER DPAK CASE APPLICATIONS: • Power Factor Correction • Alternative energy inverters • Solid state lighting FEATURES: • High voltage capability (VDS=650V) • Low gate charge (Qgs=3.0nC) • Low rDS(ON) (2.44Ω) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (Steady State) ID Maximum Pulsed Drain Current, tp=10μs IDM Continuous Source Current (Body Diode) IS Maximum Pulsed Source Current (Body Diode) ISM Single Pulse Avalanche Energy (Note 1) EAS Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC Thermal Resistance ΘJA 650 30 4.0 16 4.0 16 202 0.62 77 -55 to +150 1.62 110 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=30V, VDS=0 10 IDSS VDS=650V, VGS=0 0.03 BVDSS VGS=0, ID=250μA 650 VGS(th) VGS=VDS, ID=250μA 2.0 3.4 VSD VGS=0, IS=4.0A 0.87 rDS(ON) VGS=10V, ID=2.0A 2.44 Crss VDS=25V, VGS=0, f=1.0MHz 1.0 Ciss VDS=25V, VGS=0, f=1.0MHz 463 Coss VDS=25V, VGS=0, f=1.0MHz 60 MAX 100 1.0 4.0 1.4 2.7 UNITS V V A A A A mJ W W °C °C/W °C/W UNITS nA μA V V V Ω pF pF pF Notes: (1) L=30mH, IAS=3.6A, VDD=50V, RG=25Ω, Initial TJ=25°C R3 (2-July 2014) CDM4-650 SURFACE MOUNT SILICON N-CHANNEL MEDIUM POWER MOSFET 4.0 AMP, 650 VOLT ELECTRICAL SYMBOL Qg(tot) Qgs Qgd td tr ts tf trr Qrr CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS TYP UNITS VDS=520V, VGS=10V, ID=4.0A (Note 2) 11.4 nC VDS=520V, VGS=10V, ID=4.0A (Note 2) 3.0 nC VDS=520V, VGS=10V, ID=4.0A (Note 2) 4.7 nC VDD=325V, ID=4.0A, RG=25Ω (Note 2) 9.0 ns VDD=325V, ID=4.0A, RG=25Ω (Note 2) 23 ns VDD=325V, ID=4.0A, RG=25Ω (Note 2) 23 ns VDD=325V, ID=4.0A, RG=25Ω (Note 2) 21 ns VGS=0, IS=4.0A, di/dt=100A/μs (Note 2) 266 ns VGS=0, IS=4.0A, di/dt=100A/μs (Note 2) 2.24 μC Notes: (2) Pulse Width < 300μs, Duty Cycle < 2% DPAK CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source 4) Drain Pin 2 is common to the tab (4) MARKING: FULL PART NUMBER R3 (2-July 2014) w w w. c e n t r a l s e m i . c o m CDM4-650 SURFACE MOUNT SILICON N-CHANNEL MEDIUM POWER MOSFET 4.0 AMP, 650 VOLT TYPICAL ELECTRICAL CHARACTERISTICS R3 (2-July 2014) w w w. c e n t r a l s e m i . c o m