, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF power LDMOS transistor BLF2045 PINNING - SOT467C FEATURES • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA - Output power = 30 W (PEP) DESCRIPTION PIN - Gain = 12.5 dB 1 drain 2 gate source, connected to flange 3 - Efficiency = 32% - dlm = -26dBc • Easy power control • Excellent ruggedness • High power gain O • Excellent thermal stability O 3 • Designed for broadband operation (1800 to 2200 MHz) 2 • Internally matched for ease of use. Top view APPLICATIONS Fig.1 Simplified outline. • RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the 1800 to 2200 MHz frequency range • Broadcast drivers. DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 1800 to 2200 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) VDS (V) PL (W) GP (dB) no (%) (dBc) fi = 2000; \ = 2000.1 26 30 (PEP) >10 >30 <-25 dim N.I Semi-C (inductors reserves the righl to change lest conditions, parameter limits and package dimensions without notice Information furnished by NJ Semi-Cunducton » believed to he holh accurate ami reliable A the lime or guing to press. However NI Semi-I niiJuuior* .iwumcs no responsibility Hir ;iny errors or uinivsitms discovered in its use NJ Seini-K.oinJtn.tirs encou Miitnpcrs Invents ihm ihiinshcets ;ire uirrcnr before placing . UHF power LDMOS transistor BLF2045 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage - 65 V VGS ID gate-source voltage - ±15 V drain current (DC) - 4.5 A Tstg storage temperature -65 +150 °C Tj junction temperature - 200 °C THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to heatsink Ptot = 87.5 W; Th = 25 °C; note 1 2.1 K/W Note 1. Thermal resistance is determined under specified RF operating conditions. BLF2045 UHF power LDMOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER V(BR)DSS drain-source breakdown voltage Vestn gate-source threshold voltage IDSS drain-source leakage current CONDITIONS MAX. UNIT 65 - - V 1.5 - 3.5 V - - 5 ^A g - - - A - 125 2 - nA S 340 - m£i 38 - PF 31 - PF 1.7 - PF bsx drain cut-off current IGSS gate leakage current VGS = ±15V;V DS = 0 9fs forward transconductance VDS = 10V; ID = 2.5 A RpSon drain-source on-state resistance Ciss input capacitance VGS = VGsth + 9 V; ID = 2.5 A VGS = 0; VDS = 26 V; f = 1 MHz Coss output capacitance VGS = 0; VDS = 26 V; f = 1 MHz feedback capacitance TYP. VGS = 0; ID = 0.7 mA VDS = 10V; ID = 70mA VGS = 0; VDS = 26 V VGS = VGSth + 9V;V D s = 10V Crss MIN. VGS = 0; VDS = 26 V; f = 1 MHz UHF power LDMOS transistor BLF2045 APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h - 0.65 K/W, unless otherwise specified. f (MHz) VDS (V) IDQ (mA) PL (W) GP (dB) ^ = 2000; \ = 2000.1 26 180 30 (PEP) >10 MODE OF OPERATION 2-tone, class-AB T!D (%) >30 djm (dBc) <-25 Ruggedness in class-AB operation The BLF2045 is capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases under the following conditions: VDS = 26 V; PL = 30 W (CW); f = 2000 MHz. MCD890 20 50 GP (dB) 40 •^ ^ _Gp — 12 — — ^•__ -«=^ / ^ -^^. 30 ID / / 8 / 4 10 / 0 0 C 10 20 30 40 5D PL (PEP) (W) Class-AB operation; VDs = 26 V; IDQ = 180 mA; f! = 2000 MHz; f2 = 2000.1 MHz. Fig.3 Power gain and efficiency as function 3 Of peak envelope load power; typical val ues. t A i I I i I ~i i 1 ' I ! F ! 3 t ^ H t I \ •*• U2 E 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.67 3.94 inch 0.184 0.155 OUTLINE VERSION SOT467C b 5.59 5.33 D c 0.15 0.10 0.220 0.006 0.210 0.004 °1 E E! F 5.97 5.72 1.65 1.40 9.25 9.04 9.27 9.02 5.92 5.77 0.364 0.356 0.365 0.355 0.233 0.227 0.235 0.065 0.225 0.055 H P Q q 18.54 17.02 3.43 3.18 2.21 1.96 14.27 0.73 0.67 REFERENCES IEC JEDEC EIAJ 0,135 0.087 0.562 0.125 0.077 "1 20.45 20.19 U2 5.97 5.72 *1 0.25 0.805 0.235 0.010 0.795 0.225 w2 0.51 0.020