LRC BA892 Band-switching diode Datasheet

LESHAN RADIO COMPANY, LTD.
Band-switching diode
BA 892
FEATURES
· Small plastic SMD package
· Low diode capacitance
· Low diode forward resistance
· Small inductance.
1
APPLICATIONS
· Low loss band-switching in VHF television tuners
2
· Surface mount band-switching circuits.
DESCRIPTION
SOD523 SC-79
Planar, high performance band-switch diode in a small SMD plastic
package (SOD523).
1
CATHODE
2
ANODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
I
SYMBOL
PARAMETER
VR
IF
continuous reverse voltage
continuous forward current
P tot
T stg
total power dissipation
storage temperature
Tj
CONDITIONS
T s =90°C
junction temperature
MIN.
MAX.
UNIT
–
–
35
100
V
mA
–
-65
715
+150
mW
°C
-65
+150
°C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
Cd
reverse current
diode capacitance
CONDITIONS
I F =10 mA
diode forward resistance
TYP.
–
MAX.
1
UNIT
V
–
–
20
nA
–
0.6
0.92
0.85
1.4
1.1
pF
pF
–
0.45
0.7
Ω
–
–
0.36
0.6
0.5
-
Ω
nH
V R =30 V
f = 1 MHz; note 1;
V R= 1 V
V R= 3 V
rD
MIN
–
f = 100 MHz; note 1;
I F = 3 mA
I F = 10 mA
L
S
series inductance
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering-point
85
K/W
S22–1/2
LESHAN RADIO COMPANY, LTD.
BA 892
10
2
r D( Ω)
C d (pF)
1.6
1.2
1
0.8
0.4
f = 1 MHz; T j =25°C
f = 100 MHz; T j =25°C
0
0
10
20
V
R
(V)
Fig.1 Diode capacitance as a function of reverse
voltage; typical values.
30
10 -1
0.1
1
10
I F (mA )
Fig.2 Diode forward resistance as a function of
forward current; typical values.
S22–2/2
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