BCV27, BCV47 NPN Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Version 2004-01-20 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW 1.9 Dimensions / Maße in mm 1 = B1 2 = E2 3 = C SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCV27 BCV47 Collector-Emitter-voltage VBE = 0 VCES 30 V 60 V Collector-Base-voltage E open VCB0 40 V 80 V Emitter-Base-voltage C open VEB0 10 V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 500 mA Peak Collector current – Kollektor-Spitzenstrom ICM 800 mA Base current – Basisstrom (dc) IB 100 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. ICB0 ICB0 – – – – 100 nA 100 nA IEB0 – – 100 nA – – 1V Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 30 V IE = 0, VCB = 60 V BCV27 BCV47 Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 10 V Collector saturation volt. – Kollektor-Sättigungsspg. 2) IC = 100 mA, IB = 0.1 mA 1 VCEsat ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 8 Darlington Transistors BCV27, BCV47 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. – – 1.5 V 1 Base saturation voltage – Basis-Sättigungsspannung ) IC = 100 mA, IB = 0.1 mA VBEsat DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 5 V, IC = 1 mA BCV27 BCV47 hFE hFE 4000 2000 – – – – VCE = 5 V, IC = 10 mA BCV27 BCV47 hFE hFE 10000 4000 – – – – VCE = 5 V, IC = 100 mA BCV27 BCV47 hFE hFE 20000 10000 – – – – - VBEon – – 1.4 V fT – 220 MHz – Base-Emitter voltage – Basis-Emitter-Spannung 1) VCE = 5 V, IC = 10 mA Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft 420 K/W 2) RthA Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking – Stempelung BCV26, BCV46 BCV27 = FF BCV47 = FG Pinning – Anschlußbelegung 3 T1 T2 1 1 2 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 9