DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input and output matching cell allows an easier design of circuits. MZ0912B50Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier. MODE OF OPERATION f (GHz) Class C; tp = 10 µs; δ = 1% VCC (V) 0.960 to 1.215 50 PL (W) >50 Gp (dB) >7 ηC (%) >42 Zi/ZL (Ω) see Figs 6 and 7 PINNING - SOT443A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange APPLICATIONS Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application. handbook, halfpage 1 c b DESCRIPTION 3 e NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C. 2 Top view MAM314 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCEO collector-emitter voltage open base − 20 V VCES collector-emitter voltage RBE = 0 Ω − 60 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) tp ≤ 10 µs; δ ≤ 10% − 3 A Ptot total power dissipation (peak power) Tmb = 75 °C; tp ≤ 10 µs; δ ≤ 10% − 150 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MGL051 180 handbook, halfpage Ptot (W) 120 60 0 −50 0 100 Tmb (°C) 200 tp = 10 µs; δ = 10%; Ptot max = 150 W. Fig.2 Power derating curve. 1997 Feb 18 3 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y THERMAL CHARACTERISTICS Tj = 125 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT CW 4.9 K/W Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink CW; note 1 0.2 K/W Zth j-h thermal impedance from junction to heatsink notes 1 and 2 0.85 K/W Notes 1. See “Mounting recommendations in the General part of handbook SC19a”. 2. Equivalent thermal impedance under nominal pulse microwave operating conditions; tp = 10 µs; δ = 10%. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector cut-off current MAX. UNIT VCB = 65 V; IE = 0 20 mA VCB = 50 V; IE = 0 2 mA ICES collector cut-off current VCE = 60 V; RBE = 0 Ω 20 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 200 µA APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C measured in the test jig as shown in Fig.3 and working in class C broadband mode in pulse; note 1. MODE OF OPERATION Class C; tp = 10 µs; δ = 10% f (GHz) VCC (V)(2) PL (W) Gp (dB) ηC (%) 0.960 to 1.215 50 >50 typ. 60 >7 typ. 8 >42 typ. 44 Zi/ZL (Ω) see Figs 6 and 7 Notes 1. Operating conditions and performance for other pulse formats can be made available on request. 2. VCC during pulse. List of components (see Fig.3). COMPONENT DESCRIPTION VALUE L1, L2 0.65 mm diameter copper wire − L3 4 turns 0.65 mm diameter copper wire; C1 capacitor DIMENSIONS CATALOGUE NO. total length = 12 mm; height of loop = 9 mm − − int. dia. 3 mm; l = 5 mm − 100 pF − ATC, ref. 100A101KP50X C2 tantalum capacitor 10 µF; 50 V − − C3 electrolytic capacitor 470 µF; 63 V − − C4 feedthrough bypass capacitor − − Erie, ref. 1250-003 C5, C6 variable gigatrim capacitor 0.6 to 4.5 pF − Tekelec, ref. 727.1 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y 30 mm handbook, full pagewidth 9 2 4.5 2.5 30 mm 10 3 3 1 2 9 3 20 40 mm 2 9 11 40 mm 6.5 12 0.635 0.635 5 5 MCD634 handbook, full pagewidth +VCC C3 C4 C2 L1 L3 C1 L2 C5 MGL064 Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.3 Broadband test circuit. 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y MGL052 70 MGL053 50 handbook, halfpage handbook, halfpage PL (W) ηC (%) 60 45 50 0.95 1.05 1.15 f (GHz) 40 0.95 1.25 1.05 1.15 f (GHz) 1.25 VCC = 50 V; tp = 10 µs; δ = 10%. Fig.4 Load power as a function of frequency; (In broadband test circuit as shown in Fig.3). Fig.5 Collector efficiency as a function of frequency; (In broadband test circuit as shown in Fig.3). 1 handbook, full pagewidth 0.5 2 0.960 GHz 0.2 5 1.215 GHz 10 +j 0 0.2 0.5 1 2 5 ∞ 10 −j 10 5 0.2 2 0.5 1 MGL049 VCC = 50 V; Zo = 10 Ω; PL = 50 W. Fig.6 Optimum load impedance as a function of frequency, associated with input impedance. 1997 Feb 18 6 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y 1 handbook, full pagewidth 0.5 2 0.2 5 1.215 GHz +j 0 0.2 0.5 0.960 GHz 1 10 2 5 ∞ 10 −j 10 5 0.2 2 0.5 1 MGL050 VCC = 50 V; Zo = 10 Ω; PL = 50 W. Fig.7 Input impedance as a function of frequency, associated with optimum load impedance. 1997 Feb 18 7 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y PACKAGE OUTLINE 24 max handbook, full pagewidth 0.5 Y 0.1 6.4 max 3.5 2.9 3 1.7 max seating plane Y 3.1 1 4 min 0.5 X X 10.5 max 3.4 3.2 10.5 max 23 max 0.5 X 2 MBC663 16.5 0.5 Y Dimensions in mm. Torque on screw: Max. 0.5 Nm. Recommended screw: M3. Fig.8 SOT443A. 1997 Feb 18 8 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 18 9 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y NOTES 1997 Feb 18 10 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y NOTES 1997 Feb 18 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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