IRF IRHNA597Z60 Simple drive requirement Datasheet

PD-94677A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA597Z60
30V, P-CHANNEL
5
TECHNOLOGY
™
Product Summary
Part Number Radiation Level RDS(on)
IRHNA597Z60 100K Rads (Si) 0.013Ω
IRHNA593Z60 300K Rads (Si) 0.013Ω
ID
-56A*
-56A*
SMD-2
International Rectifier’s R5 technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TM
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC =25°C
ID @ VGS = -12V, TC =100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
-56*
-56*
-224
250
2.0
±20
1116
-56
25
0.83
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (for 5s)
3.3 (Typical)
C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/02/08
IRHNA597Z60
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
-30
∆BV DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
g fs
Forward Transconductance
40
IDSS
Zero Gate Voltage Drain Current
—
—
Typ Max Units
Test Conditions
—
—
V
VGS = 0V, ID = -1.0mA
-0.03
—
V/°C
Reference to 25°C, ID = -1.0mA
—
0.013
Ω
VGS = 12V, ID = -56A
—
—
—
—
-4.0
—
-10
-25
V
S
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -56A Ã
VDS = -24V ,VGS=0V
VDS = -24V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -56A
VDS = -15V
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.8
-100
100
220
70
50
35
200
70
70
—
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
7844
4512
564
2.1
—
—
—
—
nA
nC
ns
nH
Ã
VDD = -15V, ID = -56A,
VGS = -12V, RG = 2.35Ω
Measured from the center of
drain pad to center of source pad
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-56*
-224
-5.0
135
351
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -56A, VGS = 0V Ã
Tj = 25°C, IF = -56A, di/dt ≤ -100A/µs
VDD ≤ -25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
0.5
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHNA597Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (SMD-2)
Diode Forward Voltage Ã
300KRads(Si)2
Min
Max
Units
V
Test Conditions
-30
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.014
-30
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.014
nA
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS , ID = -1.0mA
VGS =-20V
VGS = 20 V
VDS = -24V, VGS =0V
VGS = -12V, ID =-56A
—
0.013
—
0.013
Ω
VGS = -12V, ID =-56A
—
-5.0
—
-5.0
V
VGS = 0V, IS = -56A
1. Part number IRHNA597Z60
2. Part number IRHNA593Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
VDS (V)
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
36
- 30
- 30
- 30
- 30
- 30
31
- 30
- 30
- 30
- 30
- 25
27
- 30
- 30
- 30
- 25
—
Energy
(MeV)
278.5
320
332
VDS
Br
I
Au
LET
(MeV/(mg/cm2))
37.5
59.7
81.4
-35
-30
-25
-20
-15
-10
-5
0
Br
I
Au
0
5
10
15
20
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNA597Z60
10000
10000
VGS
TOP
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.0V
BOTTOM -4.5V
1000
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
Pre-Irradiation
1000
100
-4.5V
10
60µs PULSE WIDTH
Tj = 25°C
BOTTOM
100
-4.5V
10
60µs PULSE WIDTH
Tj = 150°C
1
1
0.1
1
10
0.1
100
1
10
100
-V DS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
1.5
TJ = 150°C
100
T J = 25°C
VDS = -20V
15 WIDTH
60µs PULSE
10
ID = -56A
1.0
VGS = -12V
0.5
4
5
6
7
8
9
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.0V
-4.5V
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
Pre-Irradiation
14000
20
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
ID = -56A
-VGS, Gate-to-Source Voltage (V)
12000
C, Capacitance (pF)
IRHNA597Z60
C oss = C ds + C gd
10000
Ciss
8000
Coss
6000
4000
2000
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
1
10
0
100
40
80
120
160
200
240
280
QG, Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
T J = 150°C
-ID, Drain-to-Source Current (A)
-I SD , Reverse Drain Current (A)
VDS= -24V
VDS= -15V
100
T J = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
100
1ms
VGS = 0V
10
0.1
0
1
2
3
4
-V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
5
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNA597Z60
Pre-Irradiation
100
V GS
80
-ID , Drain Current (A)
RD
V DS
LIMITED BY PACKAGE
D.U.T.
RG
-
+
60
V DD
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.01
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHNA597Z60
L
3000
-
D.U.T
RG
VGS
-20V
+
IAS
tp
VVDD
DD
DRIVER
A
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
VDS
ID
-25A
-35.4A
BOTTOM -56A
2400
TOP
1800
1200
600
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-12 V
QGS
50KΩ
-12V
12V
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
www.irf.com
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNA597Z60
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD ≤ -30V, starting TJ = 25°C, L= 0.71mH
Peak IL = -56A, VGS = -12V
 ISD ≤ -56A, di/dt ≤ -187A/µs,
VDD ≤ -30V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
-24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2008
8
www.irf.com