BPSM4448 500 mW SURFACE MOUNT EPITAXIAL PLANAR DIODE Data Sheet Mechanical Dimensions a 2.0 unit=mm b 1.2 +- .1mm c 1.2 d 0.5 e 1.0 f 1.0 g 0.4 1 Termination-Gold Plated on Nickel 2 Cathode Band Features n PLANAR PROCESS n LOW COST LOW PROFILE PACKAGE n 500 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0 BPSM4148 Units BPSM4148 100 75 Volts Volts ............................................. 150 ............................................... mAmps ............................................. 500 ............................................... ............................................. 500 ............................................... mAmps Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO Non-Repetitive Peak Forward Surge Current...IFSM Power Dissipation...PD Operating Temperature Range...TJ Storage Temperature Range...TSTRG ......................................... -55 to 165 .......................................... mW °C °C ............................................. 1.0 ............................................... Volts ............................................. 5.0 ............................................... µAmps MHz pF ns ......................................... -25 to 85 .......................................... Electrical Characteristics Maximum Forward Voltage...VF @ IF = 100 mA Maximum DC Reverse Current...IR @ VR = 75v Maximum Frequency...f Maximum Diode Capacitance...CD Maximum Reverse Recovery Time...TRR ............................................. 100 ............................................... ............................................. 4.0 ............................................... ............................................. 4.0 ............................................... .01 uF PVV = 100nS Device Under TTest est 50 Ohms RG = 50 Ohms Trr IF 5K Ohms Output IR 0.1 IR