APM2321 P-Channel Enhancement Mode MOSFET Features • Pin Description D -20V/-0.9A , RDS(ON)=370mΩ(typ.) @ VGS=-4.5V RDS(ON)=560mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged G SOT-23 Package S Top View of SOT-23 Applications • S Power Management in Notebook Computer , G Portable Equipment and Battery Powered Systems. Ordering and Marking Information A P M 23 21 T em p. R an ge Package Code X - D ate C ode M 21X Absolute Maximum Ratings Symbol P-Channel MOSFET Package Code A : S O T -23 O perating Junction T em p. R ange C : -55 to 1 50° C H andling C ode T R : T ape & R eel H andling C ode A P M 2321A : D (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±10 ID* Maximum Drain Current – Continuous -0.9 IDM Maximum Drain Current – Pulsed -3.6 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 1 www.anpec.com.tw APM2321 Absolute Maximum Ratings (Cont.) Symbol PD Parameter Maximum Power Dissipation TJ (TA = 25°C unless otherwise noted) Rating TA=25°C 1.25 TA=100°C 0.5 Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Electrical Characteristics Symbol Parameter W 150 °C -55 to 150 °C 100 °C/W Maximum Junction Temperature TSTG Unit (TA = 25°C unless otherwise noted) Test Condition APM2321 Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=-250µA IDSS Zero Gate Voltage Drain Current VDS=-16V , VGS=0V VGS(th) Gate Threshold Voltage VDS=VGS , IDS=-250µA Gate Leakage Current VGS=±10V , VDS=0V Drain-Source On-state VGS=-4.5V , IDS=-0.9A 370 520 Resistance VGS=-2.5V , IDS=-0.8A 560 800 Diode Forward Voltage ISD=-0.5A , VGS=0V -0.8 -1.3 Qg Total Gate Charge VDS=-10V , IDS= -0.9A , 6.8 9 Qgs Gate-Source Charge VGS=-4.5V Qgd Gate-Drain Charge td(ON) Turn-on Delay Time Tr Turn-on Rise Time VDD=-10V , IDS=-0.9A , td(OFF) Turn-off Delay Time VGEN=-4.5V , RG=6Ω IGSS RDS(ON)a VSDa Dynamic Turn-off Fall Time Ciss Input Capacitance Coss Output Capacitance Notes a b -0.6 V -0.8 -1 µA -1 V ±100 nA mΩ V b Tf Crss -20 1 nC 1.1 VGS=0V 5 10 8 12 9.6 15 5 10 ns 165 VDS=-15V Reverse Transfer Capacitance Frequency=1.0MHz 55 pF 40 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 2 www.anpec.com.tw APM2321 Typical Characteristics Output Characteristics Transfer Characteristics 3.6 -VGS=4,5,6,7,8,9,10V 4 3.0 -ID-Drain Current (A) -ID-Drain Current (A) 5 -VGS=3V 3 2 -VGS=2V 1 0 0 1 2 3 4 5 2.4 1.8 TJ=125°C 1.2 TJ=-55°C 0.6 TJ=25°C 0.0 0.0 0.5 -VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.0 1.6 1.4 RDS(ON)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250µA 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 -VGS=2.5V 0.6 -VGS=4.5V 0.4 0.2 0.0 0.0 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -ID - Drain Current (A) 3 www.anpec.com.tw APM2321 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 1.8 1.0 -VGS=4.5V -ID=0.9A 0.9 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) -ID=0.9A 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 2 3 4 5 6 7 8 9 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 10 -VGS - Gate-to-Source Voltage (V) -25 0 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge Capacitance 5 250 Frequency=1MHz -VDS=10V -ID=0.9A 4 200 Capacitance (pF) -VGS-Gate-Source Voltage (V) 25 3 2 1 Ciss 150 100 Coss 50 Crss 0 0 1 2 3 4 5 6 7 0 8 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 0 4 8 12 16 20 -VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM2321 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 10 8 1 TJ=150°C Power (W) -IS-Source Current (A) 3.6 TJ=25°C 6 4 2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0.01 0.1 -VSD -Source-to-Drain Voltage (V) 1 10 100 600 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100°C/W 3.TJM-TA=PDMZthJA D=0.01 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 600 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 5 www.anpec.com.tw APM2321 Packaging Information SOT-23 D B 3 E H 2 1 S e A L A1 Dim C M illim et er s Inc he s A M in. 1. 0 0 M ax. 1. 3 0 M in. 0. 0 39 M ax. 0. 0 51 A1 0. 0 0 0. 1 0 0. 0 00 0. 0 04 B 0. 3 5 0. 5 1 0. 0 14 0. 0 20 C 0. 1 0 0. 2 5 0. 0 04 0. 0 10 D 2. 7 0 3. 1 0 0. 1 06 0. 1 22 E 1. 4 0 1. 8 0 0. 0 55 0. 0 71 e 1. 9 0 B SC H 2. 4 0 L 0. 3 7 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 0. 0 75 B SC 3. 0 0 0. 0 94 0. 11 8 0. 0 01 5 6 www.anpec.com.tw APM2321 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM2321 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application SOT-23 A B 178±1 72 ± 1.0 F D D1 Po 3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 C J 13.0 + 0.2 2.5 ± 0.15 8 T1 T2 P E 1.5± 0.3 W 8.0+ 0.3 - 0.3 8.4 ± 2 4 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 3.2± 0.1 1.4± 0.1 0.2±0.03 2.0 ± 0.1 3.15 ± 0.1 www.anpec.com.tw APM2321 Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 9 www.anpec.com.tw