BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage Value Unit VR 120 200 250 BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage Vdc Vdc 120 200 250 Continuous Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 625 mAdc TJmax 150 °C PD 385 mW Maximum Junction Temperature Power Dissipation (Note 4) 4 CATHODE 3 ANODE MARKING DIAGRAMS VRRM BAS19 BAS20 BAS21 3 1 CATHODE ANODE SC−88A 5 1 CATHODE ANODE Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. Jx M SOT−23 (TO−236) CASE 318 STYLE 8 Jx = Specific Device Code x = P, R or S M = Date Code XXd SC−88A (SOT−353) CASE 419A XX = Specific Device Code d = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2005 April, 2005 − Rev. 7 1 Publication Order Number: BAS19LT1/D BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 THERMAL CHARACTERISTICS (SOT−23) Characteristic Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient (SOT−23) Symbol Max Unit PD 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C 417 °C/W −55 to +150 °C Symbol Max Unit PD 385 mW 328 3.0 °C/W mW/°C TJmax 150 °C TJ, Tstg −55 to +150 °C RJA Total Device Dissipation Alumina Substrate (Note 3) TA = 25°C Derate above 25°C PD Thermal Resistance Junction−to−Ambient RJA Junction and Storage Temperature Range TJ, Tstg THERMAL CHARACTERISTICS (SC−88A) Characteristic Power Dissipation (Note 4) Thermal Resistance − Junction−to−Ambient Derate Above 25°C RJA Maximum Junction Temperature Operating Junction and Storage Temperature Range 2. FR−5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Voltage Leakage Current (VR = 100 Vdc) (VR = 150 Vdc) (VR = 200 Vdc) (VR = 100 Vdc, TJ = 150°C) (VR = 150 Vdc, TJ = 150°C) (VR = 200 Vdc, TJ = 150°C) BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 Reverse Breakdown Voltage (IBR = 100 Adc) (IBR = 100 Adc) (IBR = 100 Adc) BAS19 BAS20 BAS21 Min Max − − − − − − 0.1 0.1 0.1 100 100 100 120 200 250 − − − − − 1.0 1.25 Unit Adc IR V(BR) Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns http://onsemi.com 2 Vdc BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 820 +10 V 2.0 k 100 H IF tp tr 0.1 F IF t trr 10% t 0.1 F 90% D.U.T. 50 INPUT SAMPLING OSCILLOSCOPE 50 OUTPUT PULSE GENERATOR VR IR(REC) = 3.0 mA IR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 1200 25°C REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) TA = −55°C 1000 800 155°C 600 400 200 7000 6000 5000 4000 3000 TA = 155°C 6 5 4 3 2 TA = 25°C TA = −55°C 1 0 1 1 10 100 1000 1 2 5 10 20 50 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://onsemi.com 3 100 200 300 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 ORDERING INFORMATION Device Package BAS19LT1 Shipping† SOT−23 BAS19LT1G SOT−23 (Pb−Free) BAS19LT3 3000 T Tape/Reel /R l SOT−23 BAS19LT3G SOT−23 (Pb−Free) BAS20LT1 10000 T Tape/Reel /R l SOT−23 BAS20LT1G SOT−23 (Pb−Free) BAS21LT1 3000 T Tape/Reel /R l SOT−23 BAS21LT1G SOT−23 (Pb−Free) BAS21LT3 3000 T Tape/Reel /R l SOT−23 BAS21LT3G SOT−23 (Pb−Free) BAS21DW5T1 10000 T Tape/Reel /R l SC−88A BAS21DW5T1G SC−88A (Pb−Free) 3000 T Tape/Reel /R l †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09. A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 PACKAGE DIMENSIONS SC−88A (SOT−353) CASE 419A−02 ISSUE G A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 3 D 5 PL 0.2 (0.008) M B DIM A B C D G H J K N S M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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