Foshan MJE253 Silicon pnp transistor in a to-126 plastic package. Datasheet

MJE253
Rev.F Mar.-2016
描述
/
DATA SHEET
Descriptions
TO-126 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126 Plastic Package.

特征
/ Features
高 VCEO,直流电流大,特征频率高,饱和压降低。
High VCEO,Large DC current, high fT, low VCE(sat).
用途
/
Applications
用于音频功率放大,高速开关电路。
Low power audio amplifier, high speed switching applications.
内部等效电路
引脚排列
12
/ Equivalent Circuit
/ Pinning
3
PIN1:Emitter
放大及印章代码
PIN 2:Collector
PIN 3:Base
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
http://www.fsbrec.com
1/6
MJE253
Rev.F Mar.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
-100
V
Collector to Emitter Voltage
VCEO
-100
V
Emitter to Base Voltage
VEBO
-7.0
V
IC(1)
-4.0
A
IC(2)
-8.0
A
Peak Collector Current
IB
-10
A
Collector Power Dissipation
PD
1.5
W
Collector Power Dissipation
PD(Tc=25℃)
15
W
Tj
150
℃
Tstg
-55~150
℃
Collector Current - Continuous
Junction Temperature
Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
VCEO
IC=-10mA
IB=0
ICBO(1)
VCB=-100V
IE=0
-0.1
μA
ICBO(2)
VCE=-100V
Tc=125℃
-0.1
mA
IEBO
VEB=-7.0V
IC=0
-0.1
μA
hFE(1)
VCE=-1.0V
IC=-200mA
40
hFE(2)
VCE=-1.0V
IC=-1.0A
15
VCE(sat)(1)
IC=-500mA
IB=-50mA
-0.3
V
VCE(sat)(2)
IC=-1.0A
IB=-100mA
-0.6
V
Base to Emitter Saturation Voltage
VBE(sat)
IC=-2.0A
IB=-200mA
-1.8
V
Base to Emitter On Voltage
VBE(on)
VCE=-1.0V
IC=-500mA
-1.5
V
fT
VCE=-10V
IC=-100mA
Cob
VCB=-10V
f=0.1MHz
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Transition Frequency
Collector Output Capacitance
http://www.fsbrec.com
-100
V
180
40
MHz
50
pF
2/6
MJE253
Rev.F Mar.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
http://www.fsbrec.com
3/6
MJE253
Rev.F Mar.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
http://www.fsbrec.com
4/6
MJE253
Rev.F Mar.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
MJE253
****

说明:
BR:
为公司代码
MJE253:
为产品型号
****:

为生产批号代码,随生产批号变化。

Company Code
Note:
BR:  
MJE253: 
****:
http://www.fsbrec.com

Product Type.
Lot No. Code, code change with Lot No.
5/6
MJE253
Rev.F Mar.-2016
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
Package Type
封装形式
TO-126/F
套管包装
Package Type
封装形式
使用说明
Temp.:270±5℃
Time:10±1 sec
/ Packaging SPEC.
散件包装
TO-126/F
时间:10±1 sec.
/ BULK
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Tube 套管
Inner Box 盒
Outer Box 箱
500
6
3,000
5
15,000
135×190
237×172×102
560×245×195
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
65
26
1,690
5
8,450
/ TUBE
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Tube 套管
Inner Box 盒
Outer Box 箱
532×31×5.6
555×164×50
575×290×180
/ Notices
http://www.fsbrec.com
6/6
Similar pages