Fairchild FQPF8N60C 600v n-channel mosfet Datasheet

®
FQP8N60C/FQPF8N60C
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
•
•
•
•
•
•
7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
Low gate charge ( typical 28 nC)
Low Crss ( typical 12 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
●
◀
G!
G DS
TO-220
TO-220F
GD S
FQP Series
▲
●
●
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP8N60C
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
FQPF8N60C
Units
V
7.5
7.5 *
A
4.6
4.6 *
A
30
30 *
A
600
(Note 1)
± 30
V
230
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
7.5
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
14.7
4.5
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
147
1.18
48
0.38
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2004 Fairchild Semiconductor Corporation
FQP8N60C
0.85
FQPF8N60C
2.6
Units
°C/W
Rev. B, March 2004
FQP8N60C/FQPF8N60C
QFET
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
600
--
--
V
--
0.7
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.75 A
--
1.0
1.2
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 3.75 A
--
8.7
--
S
--
965
1255
pF
--
105
135
pF
--
12
16
pF
--
16.5
45
ns
--
60.5
130
ns
--
81
170
ns
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 7.5A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 7.5A,
VGS = 10 V
(Note 4, 5)
--
64.5
140
ns
--
28
36
nC
--
4.5
--
nC
--
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.5
A
ISM
--
--
30
A
--
--
1.4
V
--
365
--
ns
--
3.4
--
µC
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 7.5 A
Drain-Source Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 7.5 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, IAS = 7.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FQP8N60C/FQPF8N60C
Electrical Characteristics
FQP8N60C/FQPF8N60C
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
ID, Drain Current [A]
10
1
10
ID, Drain Current [A]
1
0
10
-1
0
10
o
25 C
-1
10
2
1
10
o
-55 C
0
10
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
-1
10
o
150 C
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
1
10
3.0
VGS = 10V
2.5
2.0
1.5
VGS = 20V
1.0
0
10
150℃
※ Note : TJ = 25℃
0.5
-1
0
5
10
15
20
10
0.2
0.4
ID, Drain Current [A]
2000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1800
0.6
Coss
800
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
600
Crss
400
1.2
1.4
12
VGS, Gate-Source Voltage [V]
Ciss
1200
1000
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
10
1600
1400
0.8
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Capacitance [pF]
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
25℃
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
200
※ Note : ID = 8A
0
0
-1
10
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2004 Fairchild Semiconductor Corporation
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, March 2004
(Continued)
1.2
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
FQP8N60C/FQPF8N60C
Typical Characteristics
1.1
1.0
0.9
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-100
-50
0
50
100
150
200
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4 A
0.5
0.0
-100
-50
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
o
2
10
Operation in This Area
is Limited by R DS(on)
10 µs
10 µs
100 µs
1
10
1 ms
DC
0
ID, Drain Current [A]
ID, Drain Current [A]
Operation in This Area
is Limited by R DS(on)
2
10
10 ms
100 ms
10
-1
10
※ Notes :
o
1. TC = 25 C
100 µs
1
10
10 ms
100 ms
DC
0
10
-1
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
10
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
1
10
2
10
3
10
10
VDS, Drain-Source Voltage [V]
1 ms
-2
10
0
10
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP8N60C
Figure 9-2. Maximum Safe Operating Area
for FQPF8N60C
8
ID, Drain Current [A]
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
10
FQP8N60C/FQPF8N60C
Typical Characteristics
(Continued)
0
Zθ JC(t), Thermal Response
D = 0 .5
0 .2
-1
10
0 .1
0 .0 5
※ N o te s :
1 . Z θ J C (t) = 0 .8 5 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .0 2
0 .0 1
10
PDM
s in g le p u ls e
-2
10
t1
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Zθ JC(t), Thermal Response
Figure 11-1. Transient Thermal Response Curve for FQP8N60C
10
D = 0 .5
0
0 .2
0 .1
0 .0 5
10
※ N o te s :
1 . Z θ J C (t) = 2 .6 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
-1
0 .0 2
0 .0 1
PDM
s in g le p u ls e
10
t1
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF8N60C
©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FQP8N60C/FQPF8N60C
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2004 Fairchild Semiconductor Corporation
ID (t)
VDS (t)
VDD
tp
Time
Rev. B, March 2004
FQP8N60C/FQPF8N60C
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FQP8N60C/FQPF8N60C
Package Dimensions
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FQP8N60C/FQPF8N60C
Package Dimensions
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
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2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I9