HER510B--- HER560B Diode Semiconductor Korea VOLTAGE RANGE: 100 --- 600 V CURRENT: 5.0 A HIGH EFFICIENCY RECTIFIERS FEATURES D2PAK High current capability 4.5± 0.2 1.3± 0.2 Low cost Low leakage Low forward voltage drop 10.2± 0.2 1.4± 0.2 PIN 1 2 3 0.1± 0.1 1.3± 0.1 MECHANICAL DATA 0.8± 0.1 Case:JEDEC D2PAK,molded plastic body Terminals: Solderable per MIL-STD-750, Method 2026 0.5± 0.2 8.9± 0.3 Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 13.2± 0.5 4 0.4± 0.1 5.0± 0.5 1 Polarity: As marked 2 3 Weight: 0.087 ounces,2.2 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. HER 510B HER 520B HER 540B HER 560B UNITS Maximum recurrent peak reverse voltage V RRM 100 200 400 600 V Maximum RMS voltage VRMS 70 140 280 420 V Maximum DC blocking voltage VDC 100 200 400 600 V Maximum average forw ard rectified current 9.5mm lead length, @TC=75 IF(AV) 5.0 A IFSM 100 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 5.0A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =100 VF IR 1.0 1.3 10 (Note1) trr Typical junction capacitance (Note2) CJ 40 Typical thermal resistance (Note3) RθJC 20 Storage temperature range A 100 - 55 ---- + 150 TSTG - 55 ---- + 150 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient. 50 TJ NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A. V 150 Maximum reverse recovery time Operating junction temperature range 1.7 ns pF /W www.diode.kr Diode Semiconductor Korea HER510B --- HER560B FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC t rr 50 N 1. 10 N 1. +0.5A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 50VDC (approx) (-) -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 20/45 ns/cm FIG.3 -- FORWARD DERATING CURVE 4 00V T J =25 Pulse W idth=300 µ S 10 1 00 \2 00V 6 00 V 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 4.0 3.0 AMPERES AVERAGE FORWARD CURRENT 100 2.0 1.0 0 25 50 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 400 200 100 40 TJ=25 f=1MHz 20 10 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE,VOLTS 40 100 125 150 100 75 AMPERES 600 100 FIG.5 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT 1000 75 CASE TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF z 5.0 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC TJ=125℃ 8.3ms Single Half Sine-Wave 50 25 0 1 2 4 8 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz www.diode.kr