MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important. • Glass-Passivated Surface for Reliability and Uniformity • Power Rated at Economical Prices • Practical Level Triggering and Holding Characteristics • Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Device Marking: Device Type, e.g., MCR106–6, Date Code www.kersemi.com SCRs 4 AMPERES RMS 400 thru 600 VOLTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G Rating Symbol Peak Repetitive Off–State Voltage(1) (TJ = –40 to 110°C, Sine Wave 50 to 60 Hz, Gate Open) MCR106–6 MCR106–8 VDRM, VRRM On-State RMS Current (TC = 93°C) (180° Conduction Angles) IT(RMS) 4.0 Amps Average On–State Current (180° Conduction Angles; TC = 93°C) IT(AV) 2.55 Amps Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) ITSM 25 Amps I2t 2.6 A2s PGM 0.5 Watt PG(AV) 0.1 Watt Forward Peak Gate Current (TC = 93°C, Pulse Width IGM 0.2 Peak Reverse Gate Voltage (TC = 93°C, Pulse Width VRGM 6.0 Volts TJ –40 to +110 °C Tstg –40 to +150 °C — 6.0 in. lb. Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (TC = 93°C, Pulse Width v 1.0 µs) Forward Average Gate Power (TC = 93°C, t = 8.3 ms) v 1.0 µs) v 1.0 µs) Operating Junction Temperature Range Storage Temperature Range Mounting Torque(2) Value A Unit K Volts 400 600 Amp 3 TO–225AA (formerly TO–126) CASE 077 STYLE 2 PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate ORDERING INFORMATION Device (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) Torque rating applies with use of compression washer (B52200-F006 or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN209B). For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum results, an activated flux (oxide removing) is recommended. 1 2 1 Package Shipping MCR106–6 TO225AA 500/Box MCR106–8 TO225AA 500/Box Preferred devices are recommended choices for future use and best overall value. MCR106–6, MCR106–8 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 3.0 °C/W Thermal Resistance, Junction to Ambient RθJA 75 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit — — — — 10 200 µA µA — — 2.0 Volts — — — — 200 500 OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1000 Ohms) IDRM, IRRM TJ = 25°C TJ = 110°C ON CHARACTERISTICS Peak Forward On–State Voltage(1) (ITM = 4 A Peak) VTM Gate Trigger Current (Continuous dc)(2) (VAK = 7 Vdc, RL = 100 Ohms) (TC = –40°C) IGT Gate Trigger Voltage (Continuous dc)(2) (VAK = 7 Vdc, RL = 100 Ohms) Gate Non-Trigger Voltage(2) (VAK = 12 Vdc, RL = 100 Ohms, TJ = 110°C) VGT — — 1.0 Volts VGD 0.2 — — Volts IH — — 5.0 mA dv/dt — 10 — V/µs Holding Current (VAK = 7 Vdc, Initiating Current = 200 mA, Gate Open) µA DYNAMIC CHARACTERISTICS Critical Rate–of–Rise of Off–State Voltage (TJ = 110°C) (1) Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. (2) RGK current is not included in measurement. www.kersemi.com 2 MCR106–6, MCR106–8 Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM IDRM Peak Repetitive Off State Forward Voltage VRRM IRRM Peak Repetitive Off State Reverse Voltage VTM IH Peak On State Voltage Anode + VTM on state Peak Forward Blocking Current IH IRRM at VRRM Peak Reverse Blocking Current Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode – 110 110 106 102 0 98 α f = 60 Hz π 94 90 α = 30° dc 60° 90° 120° 180° 86 82 TA , MAXIMUM ALLOWABLE AMBIENTTEMPERATURE ( °C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) CURRENT DERATING 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 IT(AV), AVERAGE FORWARD CURRENT (AMP) 3.6 4.0 90 0 70 α π f = 60 Hz 50 α = 30° 30 0 Figure 1. Maximum Case Temperature 0.1 60° 90° 180° dc 0.2 0.3 0.4 0.5 0.6 0.7 IT(AV), AVERAGE FORWARD CURRENT (AMP) Figure 2. Maximum Ambient Temperature www.kersemi.com 3 0.8 MCR106–6, MCR106–8 PACKAGE DIMENSIONS TO–225AA (formerly TO–126) CASE 077–09 ISSUE W –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 ––– STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE M www.kersemi.com 4 MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 –––