SMD Ultra Fast Recovery Rectifier COMCHIP www.comchip.com.tw CURM101 Thru CURM107 Reverse Voltage: 50 - 1000 Volts Forward Current: 1.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Exceeds environmental standard MIL-S19500/228 Low leakage current MINI SMA 0.161(4.10) 0.146(3.70) 0.012(0.30) Typ. 0.071(1.80) 0.055(1.40) Mechanical data 0.110(2.80) 0.094(2.40) Case: Mini SMA/SOD-123 molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.04 gram 0.063(1.60) 0.055(1.40) 0.035(0.90) Typ. 0.035(0.90) Typ. Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics CURM 103 CURM 104 CURM 105 CURM 106 100 200 400 600 800 1000 V 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V Symbol CURM 101 Max. Repetitive Peak Reverse Voltage V RRM 50 Max. DC Blocking Voltage V DC V RMS Parameter Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) CURM 102 CURM 107 Unit I FSM 30 A Max. Average Forward Current Io 1.0 A Max. Instantaneous Forward Current at 1.0 A VF Reverse recovery time Trr Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C IR 1.3 1.0 50 1.7 75 V nS 5.0 50 uA 42 C/W Typical. Thermal Resistance (Note 1) R Operating Junction Temperature Tj -55 to +150 C Storage Temperature T STG -55 to +150 C JA Note 1: Thermal resistance from junction to ambient. MDS0208019B Page 1 SMD Ultra Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CURM101 Thru CURM107) Fig.2 - Forward Characteristics Fig. 1 - Reverse Characteristics 1000 Tj=25 C 1.0 RM 10 5- 10 7 CU RM RM 10 1.0 0.1 CU 100 CU Tj=125 C Forward Current ( A ) Reverse Current ( uA ) 10 10 4 1- 10 3 10 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0.1 0 0.001 20 40 60 80 100 120 140 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance Fig. 4 - Non Repetitive Forward Surge Current =1MHz and applied 4VDC reverse voltage 120 30 Peak surge Forward Current ( A ) Junction Capacitance (pF) 175 100 80 60 40 8.3mS Single Half Sine Wave JEDEC methode 24 18 Tj=25 C 12 6 20 0 0 0.01 0.1 1.0 10 100 1 Reverse Voltage (V) 5 10 50 1 00 Number of Cycles at 60Hz Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics Fig. 6 - Current Derating Curve 1.4 trr 10W NONINDUCTIVE | | | | | | | | +0.5A ( ) (+) 25Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1W NONINDUCTIVE Average Forward Current ( A ) 50W NONINDUCTIVE 0 -0.25A (+) OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1.2 1.0 0.8 0.6 0.4 Single Phase Half Wave 60Hz 0.2 00 25 50 75 100 125 150 175 1cm SET TIME BASE FOR Ambient Temperature ( C) 50 / 10ns / cm MDS0208019B Page 2