B5817 WS HD SD0.63 SOD323 Plastic-Encapsulate Diodes Schottky Rectifier Features ● VR 20V ● IFAV 1A SOD3 23 Applications ● High frequency inverters ● Free wheeling ● Polarity protection applications Marking ● SJ Parameter Symbol Value Unit DC reverse voltage VR 20 V Mean rectifying current IO 1 A Non-repetitive Peak Forward Surge Current @ t=8.3ms IFSM 15 A Power Dissipation PD 0.25 W RθJA 400 ℃/W Junction Temperature TJ 125 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Thermal Resistance from Junction to Ambient Electrical Characteristics (Ta=25℃ Unless otherwise specified） Parameter Reverse voltage Forward voltage Symbol VBR VF Test Condition Min Type Max Unit IR =250µA 20 V IF =0.5A 0 0.37 0.40 V IF =1.0A 0 0.42 0.45 V IF =3.0A 0 0.62 0.75 V 50 µA Reverse current IR VR =20V 5 Diode capacitance CD VR=4V, f=1MHz 60 High Diode Semiconductor pF 1 Typical Characteristics Forward Characteristics Reverse Characteristics 10 3 REVERSE CURRENT IR (mA) 10 0℃ T= a 2 5℃ a T= FORWARD CURRENT IF (A) 1 0.1 1 Ta=100℃ 0.1 0.01 Ta=25℃ 0.01 0.0 1E-3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 5 FORWARD VOLTAGE VF (V) Capacitance Characteristics 15 20 25 Power Derating Curve 300 200 CAPACITANCE BETWEEN TERMINALS CT (pF) 10 REVERSE VOLTAGE VR (V) Ta=25℃ f=1MHz 250 POWER DISSIPATION PD (mW) 160 120 80 200 150 100 50 40 0 0 0 0 5 10 15 20 25 50 75 AMBIENT TEMPERATURE Ta (℃) 100 125 REVERSE VOLTAGE VR (V) High Diode Semiconductor 2 SOD323 Package Outline Dimensions SOD323 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SOD323 1.46 2.9 1.25 High Diode Semiconductor 4