Data Sheet NESG7030M04 R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG =16.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 5.8 GHz • SiGe: C HBT technology • This product is improvement of ESD. • Flat-lead 4-pin thin-type super minimold (M04 PKG) OUTLINE RENESAS Package code : M04 (Package name : Flat-lead 4-pin thin-type super minimold (M04 PKG)) 4 3 1 2 1. 2. 3. 4. Note : Marking is "T1R." Emitter Collector Emitter Base ORDERING INFORMATION Part Number NESG7030M04 Order Number NESG7030M04-A NESG7030M04-T2 NESG7030M04-T2B NESG7030M04-T2-A NESG7030M04-T2B-A Package Quantity Flat-lead 4-pin thintype super minimold (M04 PKG) (Pb-Free) 50 pcs (Non reel) 3 kpcs/reel 15kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1(Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 1 of 9 NESG7030M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Base Current Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO IB Note1 IC Ptot Note2 Tj Tstg Ratings 10 4.3 2 30 125 150 −65 to +150 Unit V V mA mA mW °C °C Notes: 1. Depend on the ESD protect device. 2 2. Mounted on 1.08 cm ×1.0 mm (t) glass epoxy PWB ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Reverse Transfer Capacitance Insertion Power Gain Maximum Stable Power Gain Noise Figure (1) Symbol Test Conditions MIN. TYP. MAX. Unit ICBO VCB = 4.3 V, IE = 0 − − 100 nA IEBO VEB = 0.4 V, IC = 0 VCE = 2 V, IC = 5 mA − 200 − 320 100 500 nA − VCB = 2 V, IE = 0, f = 1 MHz VCE = 2 V, IC = 15 mA, f = 5.8 GHz VCE = 2 V, IC = 15 mA, f = 5.8 GHz − 11.0 − 50 13.0 16.5 80 − − fF dB dB VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt − 0. 5 − dB hFE Note 1 Cre Note 2 ⏐S21e⏐2 MSG Note 3 NF1 Associated Gain (1) Ga1 VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt − 21.0 − dB Noise Figure (2) NF2 VCE = 2 V, IC = 5 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt − 0.75 1.15 dB Associated Gain (2) Ga2 VCE = 2 V, IC = 5 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt 12.0 14.0 − dB − 4.5 − dBm Gain 1 dB Compression Output Power PO (1 dB) VCE = 2 V, IC (set) = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded. S21 3. MSG = S12 hFE CLASSIFICATION Rank YFB Marking T1R hFE Value 200 to 500 R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 2 of 9 NESG7030M04 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 250 Mounted on Glass Eploxy PWB (1.08 cm2 × 1.0 mm (t) ) 200 150 125 100 50 0 0 25 50 75 100 125 100 f = 1 MHz 90 80 70 60 50 40 30 20 10 0 0 150 1 2 3 4 5 Ambient Temperature TA (°C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 15 100 10 Collector Current IC (mA) Collector Current IC (mA) VCE = 2.0 V 1 0.1 0.01 0.001 0.0001 0.4 0.6 0.8 1.0 40 μA 36 μA 32 μA 28 μA 24 μA 20 μA 10 16 μA 5 12 μA 8 μA 0 IB = 4 μA 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 DC Current Gain hFE VCE = 2.0 V 100 10 0.1 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 3 of 9 NESG7030M04 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 40 VCE = 1 V f = 2 GHz 35 Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 40 30 25 20 15 10 5 0 1 10 10 5 1 10 100 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) Gain Bandwidth Product fT (GHz) 15 Collector Current IC (mA) VCE = 3 V f = 2 GHz 30 25 20 15 10 5 10 VCE = 1 V IC = 5 mA 35 30 MSG 25 20 MAG MSG |S21e|2 15 10 5 0 1 100 0.1 1 10 100 Collector Current IC (mA) Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) 40 Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) 20 40 35 VCE = 2 V IC = 5 mA 35 30 MSG 25 20 MAG MSG |S21e|2 15 10 5 0 25 Collector Current IC (mA) 40 0 30 0 100 VCE = 2 V f = 2 GHz 35 0.1 1 10 100 Frequency f (GHz) VCE = 3 V IC = 5 mA 35 30 MSG 25 20 MAG MSG |S21e|2 15 10 5 0 0.1 1 10 100 Frequency f (GHz) Remark The graph indicates nominal characteristics. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 4 of 9 NESG7030M04 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 35 VCE = 1 V IC = 15 mA MSG 30 Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) 40 MAG MSG 25 20 |S21e|2 MAG 15 10 5 0 0.1 1 10 100 VCE = 2 V IC = 15 mA 35 MSG 30 MAG MSG 25 20 |S21e|2 15 10 5 0 0.1 1 10 100 Frequency f (GHz) Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) 40 35 MSG MAG VCE = 3 V IC = 15 mA MSG 30 25 20 |S21e|2 15 10 5 0 0.1 1 10 100 Frequency f (GHz) Remark The graph indicates nominal characteristics. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 5 of 9 NESG7030M04 INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 MSG MAG 25 20 15 |S21e|2 10 5 VCE = 1 V, f = 2 GHz 0 1 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) 30 20 15 10 |S21e| 5 VCE = 1 V, f = 5.8 GHz 0 1 100 30 25 MSG MAG 25 20 |S21e|2 15 10 5 VCE = 2 V, f = 2 GHz 0 1 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) 100 INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 MAG 15 10 |S21e|2 5 VCE = 2 V, f = 5.8 GHz 0 1 100 25 MAG 25 20 |S21e|2 10 5 VCE = 3 V, f = 2 GHz 0 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) MSG 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 10 Collector Current IC (mA) Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) 10 Collector Current IC (mA) Collector Current IC (mA) 15 MAG 20 MSG MAG 15 10 |S21e|2 5 VCE = 3 V, f = 5.8 GHz 0 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 6 of 9 NESG7030M04 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 VCE = 2 V, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt 20 15 10 1 NF 2 12 9 1 6 NF 3 5 0 1 0 0 100 10 Collector Current IC (mA) Collector Current IC (mA) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER VCE = 2 V, IC (set) = 10 mA, f = 2 GHz 5 50 15 40 10 30 Pout 0 20 –5 –10 –35 0 1 10 IC –30 –25 –20 –15 –10 0 Input Power Pin (dBm) Output Power Pout (dBm) 10 100 Collector Current IC (mA) Output Power Pout (dBm) 15 10 15 Ga 50 VCE = 2 V, IC (set) = 10 mA, f = 5.8 GHz 40 5 30 Pout 0 20 –5 10 Collector Current IC (mA) 25 Ga 2 18 3 Noise Figure NF (dB) Noise Figure NF (dB) VCE = 2 V, f = 2 GHz, ZS = ZSopt, ZL = ZLopt Associated Gain Ga (dB) 3 Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT IC –10 –20 –15 –10 –5 –0 5 0 Input Power Pin (dBm) Remark The graph indicates nominal characteristics. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 7 of 9 NESG7030M04 S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import to microwave circuit simulators without keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/download/parameter/ R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 8 of 9 NESG7030M04 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04 PKG) (UNIT: mm) 2.0±0.1 2 1 1.25 3 4 1.30 0.65 4 0.30+0.1 –0.05 0.11+0.1 –0.05 1 0.30+0.1 –0.05 0.59±0.05 1.30 (1.05) 0.65 3 2 0.60 0.65 1.25 2.0±0.1 (Bottom View) 1.25±0.1 0.30+0.1 –0.05 0.40+0.1 –0.05 2.05±0.1 PIN CONNECTIONS 1. 2. 3. 4. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Emitter Collector Emitter Base Page 9 of 9 Revision History Rev. 1.00 Date Apr 18, 2012 NESG7030M04 Data Sheet Description Summary Page − First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. 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