TI OPA209 Operational amplifier Datasheet

OP
A2
09
OPA
OPA209
OPA2209
OPA4209
2209
OPA
4209
www.ti.com
SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
2.2nV/√Hz, Low-Power, 36V,
OPERATIONAL AMPLIFIER
Check for Samples: OPA209, OPA2209, OPA4209
FEATURES
DESCRIPTION
•
•
•
•
•
•
•
The OPA209 series of precision operational
amplifiers achieve very low voltage noise density
(2.2nV/√Hz) with a supply current of only 2.5mA
(max). This series also offers rail-to-rail output swing,
which helps to maximize dynamic range.
1
2
•
•
•
LOW VOLTAGE NOISE: 2.2nV/√Hz at 1kHz
0.1Hz to 10Hz NOISE: 130nVPP
LOW QUIESCENT CURRENT: 2.5mA/Ch (max)
LOW OFFSET VOLTAGE: 150mV (max)
GAIN BANDWIDTH PRODUCT: 18MHz
SLEW RATE: 6.4V/ms
WIDE SUPPLY RANGE:
±2.25V to ±18V, +4.5V to +36V
RAIL-TO-RAIL OUTPUT
SHORT-CIRCUIT CURRENT: ±65mA
AVAILABLE IN SOT23-5, MSOP-8, SO-8, AND
TSSOP-14 PACKAGES
APPLICATIONS
•
•
•
•
•
The OPA209 is specified over a wide dual
power-supply range of ±2.25 to ±18V, or
single-supply operation from +4.5V to +36V.
The OPA209 is available in the SOT23-5, MSOP-8
and the standard SO-8 packages. The dual OPA2209
comes in both MSOP-8 and SO-8 packages. The
quad OPA4209 is available in the TSSOP-14
package.
The OPA209 series is specified from –40°C to
+125°C.
0.1Hz to 10Hz NOISE
50nV/div
•
•
•
•
•
•
PLL LOOP FILTERS
LOW-NOISE, LOW-POWER SIGNAL
PROCESSING
LOW-NOISE INSTRUMENTATION AMPLIFIERS
HIGH-PERFORMANCE ADC DRIVERS
HIGH-PERFORMANCE DAC OUTPUT
AMPLIFIERS
ACTIVE FILTERS
ULTRASOUND AMPLIFIERS
PROFESSIONAL AUDIO PREAMPLIFIERS
LOW-NOISE FREQUENCY SYNTHESIZERS
INFRARED DETECTOR AMPLIFIERS
HYDROPHONE AMPLIFIERS
In precision data acquisition applications, the
OPA209 provides fast settling time to 16-bit accuracy,
even for 10V output swings. This excellent ac
performance, combined with only 150mV (max) of
offset and low drift over temperature, makes the
OPA209 very suitable for fast, high-precision
applications.
Time (1s/div)
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008–2010, Texas Instruments Incorporated
OPA209
OPA2209
OPA4209
SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION (1)
PRODUCT
OPA209
OPA2209
OPA4209
(1)
PACKAGE-LEAD
PACKAGE DESIGNATOR
PACKAGE MARKING
SOT23-5
DBV
OOBQ
MSOP-8
DGK
OOAQ
OPA209A
SO-8
D
MSOP-8
DGK
OOJI
SO-8
D
O2209
TSSOP-14
PW
OPA4209
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS (1)
Supply Voltage
VS = (V+) – (V–)
Signal Input Terminal, Voltage (2)
Signal Input Terminal, Current (except power-supply pins)
(2)
OPA209, OPA2209, OPA4209
UNIT
40
V
(V–) – 0.5 to (V+) + 0.5
V
10
mA
Output Short-Circuit (3)
Continuous
Operating Temperature
TA
–55 to +150
°C
Storage Temperature
TA
–65 to +150
°C
TJ
Junction Temperature
ESD Ratings:
(1)
(2)
(3)
2
+200
°C
Human Body Model (HBM)
3000
V
Charged Device Model (CDM)
1000
V
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
For input voltages beyond the power-supply rails, voltage or current must be limited.
Short-circuit to ground, one amplifier per package.
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OPA209
OPA2209
OPA4209
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SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
ELECTRICAL CHARACTERISTICS: VS = ±2.25V to ±18V
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C, RL = 10kΩ connected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
OPA209, OPA2209, OPA4209
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
±35
±150
mV
1
3
mV/°C
0.05
0.5
mV/V
1
mV/V
OFFSET VOLTAGE
Input Offset Voltage
Drift
vs Power Supply
VOS
VS = ±15, VCM = 0V
dVOS/dT
PSRR
over Temperature
VS = ±2.25V to ±18V
VS = ±2.25V to ±18V
Channel Separation, dc (dual and quad versions)
1
mV/V
INPUT BIAS CURRENT
Input Bias Current
IB
VCM = 0V
±1
±4.5
nA
over Temperature, -40°C to +85°C
VCM = 0V
±8
nA
over Temperature, -40°C to +125°C
VCM = 0V
±15
nA
±4.5
nA
Input Offset Current
IOS
VCM = 0V
±0.7
over Temperature, -40°C to +85°C
VCM = 0V
±8
nA
over Temperature, -40°C to +125°C
VCM = 0V
±15
nA
NOISE
Input Voltage Noise,
XXXf = 0.1Hz to 10Hz
0.13
mVPP
Noise Density, f = 10Hz
3.3
nV/√Hz
Noise Density, f = 100Hz
2.25
nV/√Hz
Noise Density, f = 1kHz
2.2
nV/√Hz
500
fA/√Hz
Input Current Noise Density, f = 1kHz
en
In
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
Common-Mode Rejection Ratio, over
Temperature
VCM
CMRR
(V–) + 1.5V
(V–) + 1.5V < VCM < (V+) – 1.5V
120
(V+) – 1.5V
V
130
dB
Differential
200 || 4
kΩ || pF
Common-Mode
109 || 2
Ω || pF
INPUT IMPEDANCE
OPEN-LOOP GAIN
Open-Loop Voltage Gain
AOL
over Temperature
over Temperature
(V–) + 0.2V < VO < (V+) – 0.2V, RL = 10kΩ
126
(V–) + 0.2V < VO < (V+) – 0.2V, RL = 10kΩ
120
(V–) + 0.6V < VO < (V+) – 0.6V, RL = 600Ω (1)
114
(V–) + 0.6V < VO < (V+) – 0.6V, RL = 1kΩ
110
132
dB
dB
120
dB
dB
FREQUENCY RESPONSE
Gain Bandwidth Product
GBW
18
Slew Rate
SR
6.4
V/ms
Phase margin
qm
RL = 10kΩ, CL = 25pF
80
Degrees
G = –1, 10V Step, CL = 100pF
2.1
ms
G = –1, 10V Step, CL = 100pF
2.6
ms
G = –1
<1
ms
G = +1, f = 1kHz, VO = 20VPP, 600Ω
0.000025
%
Settling Time, 0.1%
tS
Settling Time, 0.0015% (16-bit)
Overload Recovery Time
Total Harmonic Distortion + Noise
(1)
THD+N
MHz
See the Thermal Information table for additional information.
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Link(s): OPA209 OPA2209 OPA4209
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OPA209
OPA2209
OPA4209
SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
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ELECTRICAL CHARACTERISTICS: VS = ±2.25V to ±18V (continued)
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C, RL = 10kΩ connected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
OPA209, OPA2209, OPA4209
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
OUTPUT
Voltage Output Swing
over Temperature
Short-Circuit Current
RL = 10kΩ, AOL > 130dB
(V–) + 0.2V
(V+) – 0.2V
V
RL = 600Ω, AOL > 114dB
(V–) + 0.6V
(V+) – 0.6V
V
RL = 10kΩ, AOL > 120dB
(V–) + 0.2V
(V+) – 0.2V
ISC
Capacitive Load Drive (stable operation)
VS = ±18V
±65
CLOAD
See Typical Characteristics
ZO
See Typical Characteristics
Open-Loop Output Impedance
V
mA
POWER SUPPLY
Specified Voltage
VS
Quiescent Current (per amplifier)
IQ
±2.25
IO = 0A
2.2
over Temperature
±18
V
2.5
mA
3.25
mA
TEMPERATURE RANGE
Specified Range
TA
–40
+125
°C
Operating Range
TA
–55
+150
°C
THERMAL INFORMATION
THERMAL METRIC (1)
OPA209AID
OPA209AIDBV
OPA209AIDGK
D
DBV
DGK
8
5
8
qJA
Junction-to-ambient thermal resistance (2)
135.5
204.9
142.6
qJCtop
Junction-to-case (top) thermal resistance
73.7
200
46.9
qJB
Junction-to-board thermal resistance
61.9
113.1
63.5
yJT
Junction-to-top characterization parameter
19.7
38.2
5.3
yJB
Junction-to-board characterization parameter
54.8
104.9
62.8
qJCbot
Junction-to-case (bottom) thermal resistance
n/a
n/a
n/a
(1)
(2)
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
THERMAL INFORMATION
THERMAL METRIC (1)
OPA2209AID
OPA2209AIDGK
OPA4209AIPW
D
DGK
PW
8
8
14
qJA
Junction-to-ambient thermal resistance (2)
134.3
132.7
112.9
qJCtop
Junction-to-case (top) thermal resistance
72.1
38.5
26.1
qJB
Junction-to-board thermal resistance
60.7
52.1
61.0
yJT
Junction-to-top characterization parameter
18.2
2.4
0.7
yJB
Junction-to-board characterization parameter
53.8
52.8
59.2
qJCbot
Junction-to-case (bottom) thermal resistance
n/a
n/a
n/a
(1)
(2)
4
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
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Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Link(s): OPA209 OPA2209 OPA4209
OPA209
OPA2209
OPA4209
www.ti.com
SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
PIN CONFIGURATIONS
OPA209
MSOP-8, SO-8
(TOP VIEW)
NC
(1)
-IN
OPA2209
MSOP-8, SO-8
(TOP VIEW)
1
2
(1)
8
NC
7
V+
6
OUT
5
NC
OUT A
OPA209
+IN
V-
3
4
1
-IN A
2
+IN A
3
V-
4
A
B
8
V+
7
OUT B
6
-IN B
5
+IN B
(1)
(1) NC = no internal connection
OPA4209
TSSOP-14
(TOP VIEW)
OPA209
SOT23-5
(TOP VIEW)
OUT
1
V-
2
+IN
3
5
4
V+
-IN
14 OUT D
OUT A
1
-IN A
2
+IN A
3
12 +IN D
V+
4
11 V-
+IN B
5
-IN B
6
OUT B
7
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Link(s): OPA209 OPA2209 OPA4209
A
D
13 -IN D
10 +IN C
B
C
9
-IN C
8
OUT C
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OPA209
OPA2209
OPA4209
SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
www.ti.com
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = ±18V, RL = 10kΩ connected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
INPUT VOLTAGE NOISE DENSITY vs FREQUENCY
INPUT CURRENT NOISE DENSITY vs FREQUENCY
10
Input Current Noise Density (nV/ÖHz)
Input Voltage Noise Density (nV/ÖHz)
100
10
1
0.1
1
0.1
1
10
100
1k
10k
100k
0.1
1
10
Frequency (Hz)
1k
10k
Figure 1.
Figure 2.
TOTAL HARMONIC DISTORTION + NOISE RATIO vs
FREQUENCY
TOTAL HARMONIC DISTORTION + NOISE RATIO vs
AMPLITUDE
0.001
1
VS = ±15V
RL = 600W
Total Harmonic Distortion+Noise (%)
Total Harmonic Distortion+Noise (%)
100
Frequency (Hz)
G = +11
VOUT = 3VRMS
0.0001
G = +1
VOUT = 3VRMS
0.00001
10
100
1k
10k 20k
0.1
0.01
0.001
G = +11
0.0001
G = +1
0.00001
0.01
0.1
Frequency (Hz)
1
10
100
Output Voltage Amplitude (VRMS)
Figure 3.
Figure 4.
0.1Hz TO 10Hz NOISE
POWER-SUPPLY REJECTION RATIO
vs FREQUENCY (REFERRED TO INPUT)
160
140
50nV/div
PSRR (dB)
120
100
-PSRR
80
+PSRR
60
40
20
0
Time (1s/div)
0.1
1
10
100
1k
10k
100k
1M
10M 100M
Frequency (Hz)
Figure 5.
6
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Figure 6.
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Link(s): OPA209 OPA2209 OPA4209
OPA209
OPA2209
OPA4209
www.ti.com
SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±18V, RL = 10kΩ connected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
OPEN-LOOP OUTPUT IMPEDANCE vs FREQUENCY
100000
Open-Loop Output Impedance (ZO)
CMRR (dB)
COMMON-MODE REJECTION RATIO vs FREQUENCY
150
140
130
120
110
100
90
80
70
60
50
40
30
20
1k
10k
100k
1M
10M
10000
1000
100
10
1
0.1
100M
1
10
Frequency (Hz)
100
1k
Figure 7.
OPEN-LOOP GAIN AND PHASE vs FREQUENCY
1M
10M 100M
OPEN-LOOP GAIN vs TEMPERATURE
5
180
4
80
Phase
60
90
40
20
45
Phase (°)
135
Open-Loop Gain (mV/V)
Gain
100
Gain (dB)
100k
Figure 8.
140
120
10k
Frequency (Hz)
3
RL = 10kW
VS = ±18V
2
1
0
-1
-2
-3
0
100
1k
10k
100k
1M
10M
-5
-50
0
-25
25
50
75
100
125
150
2.50
10
Temperature (°C)
Frequency (Hz)
Figure 10.
OFFSET VOLTAGE
PRODUCTION DISTRIBUTION
OFFSET VOLTAGE DRIFT
PRODUCTION DISTRIBUTION
Offset Voltage (mV)
Figure 11.
2.00
1.75
1.50
1.25
0.75
0.50
0.25
0
-75.00
-67.50
-60.00
-52.50
-45.00
-37.50
-30.00
-22.50
-15.00
-7.50
0
7.50
15.00
22.50
30.00
37.50
45.00
52.50
60.00
67.50
75.00
Population
Population
Figure 9.
1.00
1
0
100M
2.25
-4
-20
Drift (mV/°C)
Figure 12.
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OPA209
OPA2209
OPA4209
SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
www.ti.com
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±18V, RL = 10kΩ connected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
INPUT BIAS AND INPUT OFFSET CURRENTS
vs TEMPERATURE
80
Input Offset Voltage (mV)
100
4
3
IOS
2
1
0
IB+
-1
IB-
-2
-3
-4
VS = 36V
60
40
20
0
-20
-40
-60
-80
-5
-50
(V+)-0.5V
(V+)-1.0.V
150
(V+)-1.5V
125
(V+)-2.0V
100
(V+)-2.5V
75
(V-)+2.5V
50
Temperature (°C)
(V-)+2.0V
25
(V-)+0.5V
0
-25
(V-)+1.5V
-100
(V-)+1.0V
IB and IOS (nA)
INPUT OFFSET VOLTAGE vs COMMON-MODE VOLTAGE
5
Input Common-Mode Voltage (V)
Figure 13.
Figure 14.
INPUT OFFSET VOLTAGE vs TIME
INPUT OFFSET CURRENT vs SUPPLY VOLTAGE
20
4.5
18
3.5
16
2.5
1.5
12
IOS (nA)
VOS Shift (mV)
14
Average of 36 Typical Units
10
8
0.5
-0.5
6
-1.5
4
-2.5
2
-3.5
0
-4.5
0
20
40
60
80
100
120
4
8
12
16
Time (s)
Figure 15.
24
28
32
36
Figure 16.
INPUT BIAS AND INPUT OFFSET CURRENTS
vs COMMON-MODE VOLTAGE
INPUT BIAS CURRENT vs SUPPLY VOLTAGE
2.0
4
VS = 36V
10 Typical Units Shown
1.5
3
2
1.0
IB-
IB+
0.5
IB (nA)
1
0
IB-1
0
-0.5
IOS
IB+
IOS
(V+)-0.5V
(V+)-1.0.V
(V+)-1.5V
(V+)-2.0V
(V+)-2.5V
(V+)-3.0V
-2.0
(V-)+3.0V
-4
(V-)+2.5V
-1.5
(V-)+2.0V
-3
(V-)+1.5V
-1.0
(V-)+1.0V
-2
(V-)+0.5V
IB and IOS (nA)
20
VS (V)
4
8
12
16
20
24
28
32
36
Supply Voltage (V)
Common-Mode Voltage (V)
Figure 17.
8
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Figure 18.
Copyright © 2008–2010, Texas Instruments Incorporated
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OPA209
OPA2209
OPA4209
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SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±18V, RL = 10kΩ connected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
QUIESCENT CURRENT vs TEMPERATURE
QUIESCENT CURRENT vs SUPPLY VOLTAGE
3.5
2.5
3.0
2.0
2.0
IQ (mA)
IQ (mA)
2.5
1.5
1.5
1.0
1.0
0.5
0.5
0
-50
0
-25
0
25
50
75
100
125
150
0
4
8
12
16
Temperature (°C)
Figure 19.
SHORT-CIRCUIT CURRENT vs TEMPERATURE
Output Voltage (V)
ISC (mA)
Sourcing
VS = ±2.25V
0
Sinking
VS = ±2.25V
-40
+85°C
15
60
-20
28
32
36
OUTPUT VOLTAGE vs OUTPUT CURRENT
20
Sourcing
VS = ±18V
80
20
24
Figure 20.
100
40
20
VS (V)
VS = ±18V
0°C
10
05
+150°C
0
-50°C
+125°C
-40°C
+85°C
-05
0°C
-10
-50°C
-60
Sinking
VS = ±18V
-80
-100
-50
-15
-40°C
-20
-25
0
25
50
75
100
125
150
20
30
40
Temperature (°C)
50
Figure 21.
Figure 22.
SMALL-SIGNAL STEP RESPONSE
SMALL-SIGNAL STEP RESPONSE
RF
604W
RL
CL
20mV/div
+18V
OPA209
70
G = -1
CL = 100pF
G = +1
RL = 604W
CL = 100pF
20mV/div
60
Output Current (mA)
RI
604W
+18V
OPA209
-18V
CL
-18V
Time (0.1ms/div)
Time (0.2ms/div)
Figure 23.
Figure 24.
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OPA209
OPA2209
OPA4209
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TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±18V, RL = 10kΩ connected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
LARGE-SIGNAL STEP RESPONSE
LARGE-SIGNAL STEP RESPONSE
G = -1
CL = 100pF
G = +1
RL = 604W
CL = 100pF
2V/div
2V/div
+18V
OPA209
RL
RF
604W
RI
604W
CL
-18V
+18V
OPA209
CL
-18V
Time (1ms/div)
Time (1ms/div)
Figure 25.
Figure 26.
NO PHASE REVERSAL
NEGATIVE OVERLOAD RECOVERY
G = -10
Output
VIN
5V/div
5V/div
0V
+18V
10kW
1kW
OPA209
Output
VOUT
-18V
37VPP
Sine Wave
(±18.5V)
OPA209
VOUT
VIN
0.25ms/div
Time (0.5ms/div)
Figure 27.
Figure 28.
POSITIVE OVERVOLTAGE RECOVERY
SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD
60
10kW
1kW
OPA209
VOUT
50
VOUT
VIN
5V/div
Overshoot (%)
G = +1
0V
VIN
40
G = -1
30
20
10
G = -10
Time (0.5ms/div)
0
0
200
400
600
800
1000
1200
1400 1600
Capacitive Load (pF)
Figure 29.
10
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Figure 30.
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Link(s): OPA209 OPA2209 OPA4209
OPA209
OPA2209
OPA4209
www.ti.com
SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
APPLICATION INFORMATION
DESCRIPTION
OPERATING VOLTAGE
The OPA209 series of precision operational
amplifiers are unity-gain stable, and free from
unexpected output and phase reversal. Applications
with noisy or high-impedance power supplies require
decoupling capacitors placed close to the device pins.
In most cases, 0.1mF capacitors are adequate.
Figure 31 shows a simplified schematic of the
OPA209. This die uses a SiGe bipolar process and
contains 180 transistors.
The OPA209 series of op amps can be used with
single or dual supplies within an operating range of
VS = +4.5V (±2.25V) up to +36V (±18V). Supply
voltages higher than 40V total can permanently
damage the device; see the Absolute Maximum
Ratings table.
In addition, key parameters are assured over the
specified temperature range, TA = –40°C to +125°C.
Parameters that vary significantly with operating
voltage or temperature are shown in the Typical
Characteristics section of this data sheet.
V+
Pre-Output Driver
OUT
IN-
IN+
V-
Figure 31. OPA209 Simplified Schematic
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Link(s): OPA209 OPA2209 OPA4209
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11
OPA209
OPA2209
OPA4209
SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
www.ti.com
The input terminals of the OPA209 are protected from
excessive differential voltage with back-to-back
diodes, as shown in Figure 32. In most circuit
applications, the input protection circuitry has no
consequence. However, in low-gain or G = 1 circuits,
fast ramping input signals can forward-bias these
diodes because the output of the amplifier cannot
respond rapidly enough to the input ramp. This effect
is illustrated in Figure 25 and Figure 26 of the Typical
Characteristics. If the input signal is fast enough to
create this forward-bias condition, the input signal
current must be limited to 10mA or less. If the input
signal current is not inherently limited, an input series
resistor can be used to limit the signal input current.
This input series resistor degrades the low-noise
performance of the OPA209. See the Noise
Performance section for further information on noise
performance. Figure 32 shows an example
configuration that implements a current-limiting
feedback resistor.
RF
The equation in Figure 33 shows the calculation of
the total circuit noise, with these parameters:
• en = voltage noise,
• in = current noise,
• RS = source impedance,
• k = Boltzmann's constant = 1.38 × 10–23 J/K,
• and T = temperature in kelvins.
For more details on calculating noise, see the Basic
Noise Calculations section.
VOLTAGE NOISE SPECTRAL DENSITY
vs SOURCE RESISTANCE
10k
Votlage Noise Spectral Density, EO
INPUT PROTECTION
EO
1k
RS
OPA209
100
OPA827
Resistor Noise
10
2
1k
100
-
2
2
EO = en + (in RS) + 4kTRS
1
10k
100k
1M
Source Resistance, RS (W)
OPA209
RI
Input
Output
Figure 33. Noise Performance of the OPA209 and
OPA827 in Unity-Gain Buffer Configuration
+
BASIC NOISE CALCULATIONS
Figure 32. Pulsed Operation
NOISE PERFORMANCE
Figure 33 shows the total circuit noise for varying
source impedances with the op amp in a unity-gain
configuration (no feedback resistor network, and
therefore no additional noise contributions). Two
different op amps are shown with the total circuit
noise calculated. The OPA209 has very low voltage
noise, making it ideal for low source impedances
(less than 2kΩ). As a comparable precision FET-input
op amp (very low current noise), the OPA827 has
somewhat higher voltage noise, but lower current
noise. It provides excellent noise performance at
moderate to high source impedance (10kΩ and up).
For source impedance lower than 300Ω, the OPA211
may provide lower noise.
12
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Low-noise circuit design requires careful analysis of
all noise sources. External noise sources can
dominate in many cases; consider the effect of
source resistance on overall op amp noise
performance. Total noise of the circuit is the
root-sum-square
combinations
of
all
noise
components.
The resistive portion of the source impedance
produces thermal noise proportional to the square
root of the resistance. This function is illustrated in
Figure 33. The source impedance is usually fixed;
consequently, select the appropriate op amp and the
feedback resistors to minimize the respective
contributions to the total noise.
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Link(s): OPA209 OPA2209 OPA4209
OPA209
OPA2209
OPA4209
www.ti.com
SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
Figure 34 illustrates both noninverting (Figure 34a)
and inverting (Figure 34b) op amp circuit
configurations with gain. In circuit configurations with
gain, the feedback network resistors also contribute
noise. The current noise of the op amp reacts with
the feedback resistors to create additional noise
components.
The feedback resistor values can generally be
chosen to make these noise sources negligible. Note
that low-impedance feedback resistors load the
output of the amplifier. The equations for total noise
are shown for both configurations.
A) Noise in Noninverting Gain Configuration
Noise at the output:
R2
2
2
EO
R1
= 1+
R2
R1
2
2
2
2
2
2
en + e1 + e2 + (inR2) + eS + (inRS)
EO
R2
Where eS = Ö4kTRS ´ 1 +
R1
2
1+
R2
R1
= thermal noise of RS
RS
e1 = Ö4kTR1 ´
VS
R2
R1
= thermal noise of R1
e2 = Ö4kTR2 = thermal noise of R2
B) Noise in Inverting Gain Configuration
Noise at the output:
R2
2
2
EO = 1 +
R1
R2
R1 + RS
EO
RS
Where eS = Ö4kTRS ´
2
2
2
2
2
en + e1 + e2 + (inR2) + eS
R2
R1 + RS
= thermal noise of RS
VS
e1 = Ö4kTR1 ´
R2
R1 + RS
= thermal noise of R1
e2 = Ö4kTR2 = thermal noise of R2
NOTE: For the OPA209 series op amps at 1kHz, en = 2.2nV/√Hz and In = 530fA/√Hz.
Figure 34. Noise Calculation in Gain Configurations
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Link(s): OPA209 OPA2209 OPA4209
Submit Documentation Feedback
13
OPA209
OPA2209
OPA4209
SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
www.ti.com
ELECTRICAL OVERSTRESS
Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress.
These questions tend to focus on the device inputs, but may involve the supply voltage pins or even the output
pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown
characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin.
Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from
accidental ESD events both before and during product assembly.
It is helpful to have a good understanding of this basic ESD circuitry and its relevance to an electrical overstress
event. See Figure 35 for an illustration of the ESD circuits contained in the OPA209 series (indicated by the
dashed line area). The ESD protection circuitry involves several current-steering diodes connected from the input
and output pins and routed back to the internal power-supply lines, where they meet at an absorption device
internal to the operational amplifier. This protection circuitry is intended to remain inactive during normal circuit
operation.
An ESD event produces a short duration, high-voltage pulse that is transformed into a short duration,
high-current pulse as it discharges through a semiconductor device. The ESD protection circuits are designed to
provide a current path around the operational amplifier core to prevent it from being damaged. The energy
absorbed by the protection circuitry is then dissipated as heat.
When an ESD voltage develops across two or more of the amplifier device pins, current flows through one or
more of the steering diodes. Depending on the path that the current takes, the absorption device may activate.
The absorption device has a trigger, or threshold voltage, that is above the normal operating voltage of the
OPA209 but below the device breakdown voltage level. Once this threshold is exceeded, the absorption device
quickly activates and clamps the voltage across the supply rails to a safe level.
When the operational amplifier connects into a circuit such as the one Figure 35 shows, the ESD protection
components are intended to remain inactive and not become involved in the application circuit operation.
However, circumstances may arise where an applied voltage exceeds the operating voltage range of a given pin.
Should this condition occur, there is a risk that some of the internal ESD protection circuits may be biased on,
and conduct current. Any such current flow occurs through steering diode paths and rarely involves the
absorption device.
Figure 35 depicts a specific example where the input voltage, VIN, exceeds the positive supply voltage (+VS) by
500mV or more. Much of what happens in the circuit depends on the supply characteristics. If +VS can sink the
current, one of the upper input steering diodes conducts and directs current to +VS. Excessively high current
levels can flow with increasingly higher VIN. As a result, the datasheet specifications recommend that applications
limit the input current to 10mA.
If the supply is not capable of sinking the current, VIN may begin sourcing current to the operational amplifier, and
then take over as the source of positive supply voltage. The danger in this case is that the voltage can rise to
levels that exceed the operational amplifier absolute maximum ratings.
Another common question involves what happens to the amplifier if an input signal is applied to the input while
the power supplies +VS and/or –VS are at 0V.
Again, it depends on the supply characteristic while at 0V, or at a level below the input signal amplitude. If the
supplies appear as high impedance, then the operational amplifier supply current may be supplied by the input
source via the current steering diodes. This state is not a normal bias condition; the amplifier most likely will not
operate normally. If the supplies are low impedance, then the current through the steering diodes can become
quite high. The current level depends on the ability of the input source to deliver current, and any resistance in
the input path.
If there is an uncertainty about the ability of the supply to absorb this current, external zener diodes may be
added to the supply pins as shown in Figure 35. The zener voltage must be selected such that the diode does
not turn on during normal operation.
However, its zener voltage should be low enough so that the zener diode conducts if the supply pin begins to
rise above the safe operating supply voltage level.
14
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Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Link(s): OPA209 OPA2209 OPA4209
OPA209
OPA2209
OPA4209
www.ti.com
SBOS426B – NOVEMBER 2008 – REVISED AUGUST 2010
(2)
TVS
RF
+V
+VS
OPA209
RI
ESD CurrentSteering Diodes
-In
(3)
RS
+In
Op Amp
Core
Edge-Triggered ESD
Absorption Circuit
ID
VIN
Out
RL
(1)
-V
-VS
(2)
TVS
(1)
VIN = +VS + 500mV.
(2)
TVS: +VS(max) > VTVSBR (Min) > +VS
(3)
Suggested value approximately 1kΩ.
Figure 35. Equivalent Internal ESD Circuitry and Its Relation to a Typical Circuit Application
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Link(s): OPA209 OPA2209 OPA4209
Submit Documentation Feedback
15
PACKAGE OPTION ADDENDUM
www.ti.com
4-Sep-2010
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
Samples
(Requires Login)
OPA209AID
PREVIEW
SOIC
D
8
75
TBD
Call TI
Call TI
Samples Not Available
OPA209AIDBVR
PREVIEW
SOT-23
DBV
5
3000
TBD
Call TI
Call TI
Samples Not Available
OPA209AIDBVT
PREVIEW
SOT-23
DBV
5
250
TBD
Call TI
Call TI
Samples Not Available
OPA209AIDGKR
PREVIEW
MSOP
DGK
8
2500
TBD
Call TI
Call TI
Samples Not Available
OPA209AIDGKT
PREVIEW
MSOP
DGK
8
250
TBD
Call TI
Call TI
Samples Not Available
OPA209AIDR
PREVIEW
SOIC
D
8
2500
TBD
Call TI
Call TI
Samples Not Available
OPA2209AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
OPA2209AIDGKR
PREVIEW
MSOP
DGK
8
2500
TBD
Call TI
Call TI
Samples Not Available
OPA2209AIDGKT
PREVIEW
MSOP
DGK
8
250
TBD
Call TI
Call TI
Samples Not Available
OPA2209AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
OPA4209AIPW
PREVIEW
TSSOP
PW
14
90
TBD
Call TI
Call TI
Samples Not Available
OPA4209AIPWR
PREVIEW
TSSOP
PW
14
2000
TBD
Call TI
Call TI
Samples Not Available
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
Purchase Samples
Request Free Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
4-Sep-2010
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Sep-2010
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
OPA2209AIDR
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.4
B0
(mm)
K0
(mm)
P1
(mm)
5.2
2.1
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Sep-2010
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
OPA2209AIDR
SOIC
D
8
2500
346.0
346.0
29.0
Pack Materials-Page 2
MECHANICAL DATA
MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,30
0,19
0,65
14
0,10 M
8
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
7
0°– 8°
A
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
PINS **
0,10
8
14
16
20
24
28
A MAX
3,10
5,10
5,10
6,60
7,90
9,80
A MIN
2,90
4,90
4,90
6,40
7,70
9,60
DIM
4040064/F 01/97
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion not to exceed 0,15.
Falls within JEDEC MO-153
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• DALLAS, TEXAS 75265
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