CJU01N65B TO-252-2L Plastic-Encapsulate MOSFETS CJU01N65B N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE z High Current Rating Lower RDS(on) z Lower Capacitance z z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 1 Pulsed Drain Current IDM 4 Single Pulsed Avalanche Energy (note1) EAS 5 mJ Power Dissipation PD 1.25 W RθJA 100 ℃/W TJ, TSTG -55 ~+150 TL 260 Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds [email protected] www.zpsemi.com V A ℃ 1 of 3 CJU01N65B Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 650 V Drain-source diode forward voltage(note2) VSD VGS = 0V, IS =1A 1.5 Zero gate voltage drain current IDSS VDS =600V, VGS =0V 100 µA Gate-body leakage curren (note2) IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 4.0 V Static drain-source on-resistance RDS(on) VGS =10V, ID =0.6A 14 Ω On characteristics (note2) 2.0 Dynamic characteristics (note 3) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 210 VDS =25V,VGS =0V,f =1MHz pF 28 4.2 Switching characteristics (note 3) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 2.0 Turn-on delay time (note3) td(on) 8 Turn-on rise time (note3) Turn-off delay time (note3) Turn-off fall time (note3) tr td(off) 5.0 VDS =480V,VGS =10V,ID =4.0A 2.7 VDD=300V, VGS=10V, 21 RG=18Ω, ID =1A 18 tf 10 nC ns 24 Notes : 1. L=10mH, IL=1 A, VDD=50V, VGS=10V,RG=25Ω,Starting TJ=25℃. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. [email protected] www.zpsemi.com 2 of 3 CJU01N65B Transfer Characteristics Output Characteristics 1.6 0.5 VDS=10V Pulsed Pulsed 0.4 VGS= 6V、 8V、10V ID (A) 1.2 1.0 DRAIN CURRENT DRAIN CURRENT ID (A) 1.4 VGS=5.5V 0.8 0.6 0.3 0.2 Ta=100℃ Ta=25℃ VGS=5V 0.4 0.1 0.2 VGS=4.5V 0.0 0.0 0 10 20 DRAIN TO SOURCE VOLTAGE 30 VDS 0 2 (V) 4 6 GATE TO SOURCE VOLTAGE VGS RDS(ON)—— VGS RDS(ON) —— ID 20 60 Ta=25℃ Pulsed ID=0.6A Pulsed RDS(ON) ( Ω) 15 RDS(ON) ( Ω) 50 VGS=10V ON-RESISTANCE ON-RESISTANCE 8 (V) 10 5 40 Ta=100℃ Ta=25℃ 30 20 10 0 0.0 0 0.2 0.4 0.6 DRAIN CURRENT 0.8 ID 1.0 0 (A) 2 4 6 8 GATE TO SOURCE VOLTAGE VGS 10 12 (V) Threshold Voltage IS —— VSD 10 5 (V) 4 ID=250uA VTH 1 Ta=100℃ Ta=25℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) Pulsed 0.1 0.01 1E-3 0.0 0.4 0.8 1.2 1.6 SOURCE TO DRAIN VOLTAGE [email protected] 2.0 2.4 3 2 1 0 25 VSD (V) 50 75 JUNCTION TEMPERATURE www.zpsemi.com 100 TJ 125 (℃ ) 3 of 3