isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFAC30 FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·High current ,high speed switching ·Switch mode power supplies ·DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 3.6 A IDM Drain Current-Single Pluse 14 A PD Total Dissipation @TC=25℃ 74 W TJ Max. Operating Junction Temperature -55~150 ℃ Storage Temperature -55~150 ℃ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro MAX UNIT 1.67 ℃/W 30 ℃/W 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFAC30 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance IGSS MIN MAX UNIT 600 4 V VGS= 10V; ID=1.9A 2.2 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 480V; VGS= 0 25 μA VSD Forward On-Voltage IS= 3.6A; VGS= 0 1.6 V Ciss Input Capacitance 630 pF Coss Output Capacitance 80 pF Crss Reverse Transfer Capacitance 15 pF isc website：www.iscsemi.cn PDF pdfFactory Pro VDS=25V,VGS=0V, F=1.0MHz 2 2 V isc & iscsemi is registered trademark www.fineprint.cn