MC100EL1648 5 VECL Voltage Controlled Oscillator Amplifier The MC100EL1648 is a voltage controlled oscillator amplifier that requires an external parallel tank circuit consisting of the inductor (L) and capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage variable input for the oscillator (VCO). This device may also be used in many other applications requiring a fixed frequency clock. The MC100EL1648 is ideal in applications requiring a local oscillator, systems that include electronic test equipment, and digital high−speed telecommunications. The MC100EL1648 is based on the VCO circuit topology of the MC1648. The MC100EL1648 uses advanced bipolar process technology which results in a design which can operate at an extended frequency range. The ECL output circuitry of the MC100EL1648 is not a traditional open emitter output structure and instead has an on−chip termination emitter resistor, RE, with a nominal value of 510 . This facilitates direct ac−coupling of the output signal into a transmission line. Because of this output configuration, an external pull−down resistor is not required to provide the output with a dc current path. This output is intended to drive one ECL load (3.0 pF). If the user needs to fanout the signal, an ECL buffer such as the EL16 (EL11, EL14) type Line Receiver/Driver should be used. NOTE: The MC100EL1648 is NOT useable as a crystal oscillator. • • • • • Typical Operating Frequency Up to 1100 MHz Low−Power 19 mA at 5.0 Vdc Power Supply PECL Mode Operating Range: VCC = 4.2 V to 5.5 V with VEE = 0 V NECL Mode Operating Range: VCC = 0 V with VEE = −4.2 V to −5.5 V Input Capacitance = 6.0 pF (TYP) http://onsemi.com MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 K1648 ALYW 1 8 8 1 TSSOP−8 DT SUFFIX CASE 948R 1648 ALYW 1 14 14 1 SOIC EIAJ−14 M SUFFIX CASE 965 A L, WL Y W, WW KEL1648 AWLYWW 1 = Assembly Location = Wafer Lot = Year = Work Week *For additional marking information, refer to Application Note AND8002/D. VCC VCC ORDERING INFORMATION EXTERNAL TANK CIRCUIT See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. BIAS POINT OUTPUT TANK VEE VEE AGC Figure 1. Logic Diagram Semiconductor Components Industries, LLC, 2004 May, 2004 − Rev. 4 1 Publication Order Number: MC100EL1648/D MC100EL1648 BIAS VEE VEE 8 7 6 5 14 13 12 11 10 9 8 1 2 3 4 1 2 3 4 5 6 7 VCC OUT VCC NC OUT NC AGC NC VEE TANK VCC AGC VCC NC TANK NC BIAS NC 8 Lead VEE 14 Lead Warning: All VCC and VEE pins must be externally connected to Power Supply to guarantee proper operation. Figure 2. Pinout Assignments Table 1. PIN DESCRIPTION Pin No. ÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 8 Lead 14 Lead Symbol Description 1 12 TANK 2, 3 1, 14 VCC OSC Input Voltage Positive Supply 4 3 OUT ECL Output 5 5 AGC Automatic Gain Control Input 6, 7 7, 8 VEE Negative Output 8 10 BIAS OSC Input Reference Voltage 2, 4, 7, 9, 11, 13 NC No Connect Table 2. ATTRIBUTES Characteristic Value Internal Input Pulldown Resistor N/A Internal Input Pullup Resistor N/A ESD Protection Human Body Model Machine Model Charged Device Model Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Flammability Rating Oxygen Index > 1 kV > 100 V > 1 kV Level 1 UL 94 V−0 @ 0.125 in 28 to 34 Transistor Count 11 Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test 1. For additional Moisture Sensitivity information, refer to Application Note AND8003/D. http://onsemi.com 2 MC100EL1648 Table 3. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Unit VCC Power Supply PECL Mode VEE = 0 V 7 to 0 V VEE Power Supply NECL Mode VCC = 0 V −7 to 0 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V 6 to 0 −6 to 0 V V Iout Output Current Continuous Surge 50 100 mA mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C JA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm SOIC−8 SOIC−8 190 130 °C/W °C/W JC Thermal Resistance (Junction−to−Case) Standard Board SOIC−8 41 to 44 °C/W JA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm TSSOP−8 TSSOP−8 185 140 °C/W °C/W JC Thermal Resistance (Junction−to−Case) Standard Board TSSOP−8 41 to 44 °C/W JA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm SOIC−14 SOIC−14 150 110 °C/W °C/W JC Thermal Resistance (Junction−to−Case) Standard Board SOIC−14 41 to 44 °C/W Tsol Wave Solder <2 to 3 sec @ 248°C 265 °C VI VCC VI VEE Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. http://onsemi.com 3 MC100EL1648 Table 4. PECL DC CHARACTERISTICS VCC = 5.0 V; VEE = 0.0 V +0.8 / −0.5 V (Note 2) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 13 19 25 13 19 25 13 19 25 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 3) 3950 4170 4610 3950 4170 4610 3950 4170 4610 mV VOL Output LOW Voltage (Note 3) 3040 3410 3600 3040 3410 3600 3040 3410 3600 mV AGC Automatic Gain Control Input 1690 1980 1690 1980 1690 1980 mV VBIAS Bias Voltage (Note 4) 1650 1800 1650 1800 1650 1800 mV VIL 1.5 1.35 VIH IL 1.2 2.0 Input Current V 1.85 −5.0 1.7 −5.0 −5.0 V mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Output parameters vary 1:1 with VCC. 3. 1.0 M impedance. 4. This measurement guarantees the dc potential at the bias point for purposes of incorporating a varactor tuning diode at this point. Table 5. NECL DC CHARACTERISTICS VCC = 0.0 V; VEE = −5.0 V +0.8 / −0.5 V (Note 5) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 13 19 25 13 19 25 13 19 25 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 6) −1050 −830 −399 −1050 −830 −399 −1050 −830 −399 mV VOL Output LOW Voltage (Note 6) −1960 −1590 −1400 −1960 −1590 −1400 −1960 −1590 −1400 mV AGC Automatic Gain Control Input −3310 −3020 −3310 −3020 −3310 −3020 mV VBIAS Bias Voltage (Note 7) −3350 −3200 −3350 −3200 −3350 −3200 mV VIL −3.5 −3.65 VIH IL −3.8 −3.0 Input Current −5.0 V −3.15 −5.0 −3.3 −5.0 V mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 5. Output parameters vary 1:1 with VCC. 6. 1.0 M impedance. 7. This measurement guarantees the dc potential at the bias point for purposes of incorporating a varactor tuning diode at this point. http://onsemi.com 4 MC100EL1648 GENERIC TEST CIRCUITS: Bypass to Supply Opposite GND VCC 0.1 F 0.1 F 3 (1) 8 (10) 2 (14) VIN 1 K * Tank #1 4 (3) L C ** FOUT L = Micro Metal torroid #T20−22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = MMBV609 1 (12) 6 (7) 7 (8) VEE 100 F 0.01 F 5 (5) 0.1 F * Use high impedance probe (>1.0 M must be used). ** The 1200 resistor and the scope termination impedance constitute a 25:1 attenuator probe. Coax shall be CT−070−50 or equivalent. 0.1 F 8 pin (14 pin) Lead Package Tank Circuit Option #1, Varactor Diode VCC 0.1 F 8 (10) 0.1F Test Point 0.1 F 3 (1) 2 (14) 4 (3) FOUT C L Tank #2 Note 1 Capacitor for tank may be variable type. (See Tank Circuit #3.) Note 2 Use high impedance probe (> 1 M ). 1 (12) 6 (7) 7 (8) VEE 100 F L = Micro Metal torroid #T20−22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = 3.0−35pF Variable Capacitance (@ 10 pF) 0.01 F 5 (5) 0.1 F 8 pin (14 pin) Lead Package 0.1 F Tank Circuit Option #2, Fixed LC Figure 3. Typical Test Circuit with Alternate Tank Circuits 50% VP−P ta PRF = 1.0MHz t Duty Cycle (Vdc) − a tb tb Figure 4. Output Waveform http://onsemi.com 5 MC100EL1648 OPERATION THEORY Q2 and Q3, in conjunction with output transistor Q1, provide a highly buffered output that produces a square wave. The typical output waveform can be seen in Figure 4. The bias drive for the oscillator and output buffer is provided by Q9 and Q11 transistors. In order to minimize current, the output circuit is realized as an emitter−follower buffer with an on chip pull−down resistor RE. Figure 5 illustrates the simplified circuit schematic for the MC100EL1648. The oscillator incorporates positive feedback by coupling the base of transistor Q6 to the collector of Q7. An automatic gain control (AGC) is incorporated to limit the current through the emitter−coupled pair of transistors (Q7 and Q6) and allow optimum frequency response of the oscillator. In order to maintain the high quality factor (Q) on the oscillator, and provide high spectral purity at the output, transistor Q4 is used to translate the oscillator signal to the output differential pair Q2 and Q3. Figure 16 indicates the high spectral purity of the oscillator output (pin 4 on 8−pin SOIC). Transistors VCC 2 (14) 800 VCC 3 (1) 1.36 K 660 3.1 K 167 Q9 Q1 Q3 1.6 K Q2 OUTPUT 4 (3) Q4 Q11 Q10 Q7 Q6 D1 330 Q8 D2 400 Q5 16 K VEE 7 (8) BIAS 8 (10) TANK 1 (12) VEE 6 (7) 82 AGC 5 (5) Figure 5. Circuit Schematic http://onsemi.com 6 400 660 510 8 pin (14 pin) Lead Package MC100EL1648 30 Measured Frequency (MHz) FREQUENCY (MHz) 25 Calculated Frequency (MHz) 20 L = Micro Metal torroid #T20−22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = 3.0−35 pF Variable Capacitance (@ 10 pF) 15 * The 1200 resistor and the scope termination impedance constitute a 25:1 attenuator probe. Coax shall be CT−070−50 or equivalent. 10 5 8 pin (14 pin) Lead Package 0 0 300 500 1000 2000 10000 0.1F CAPACITANCE (pF) 2 (14) 8 (10) 10F 3(1) 1200* L 0.1F C 4 (3) SIGNAL UNDER TEST 1 (12) Tank #3 6 (7) 7 (8) VEE 100 F 0.01 F 5 (5) 0.1 F 0.1 F Figure 6. Low Frequency Plot 100 FREQUENCY (MHZ) 80 60 L = Micro Metal torroid #T20−22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = 3.0−35 pF Variable Capacitance (@ 10 pF) 40 20 * The 1200 resistor and the scope termination impedance constitute a 25:1 attenuator probe. Coax shall be CT−070−50 or equivalent. Measured Frequency (MHz) Calculated Frequency (MHz) 8 pin (14 pin) Lead Package 0 0 0.2 0.3 300 0.1F CAPACITANCE (pF) 2 (14) 8 (10) 10F 3(1) 1200* L 0.1F C 4 (3) Tank #3 1 (12) 6 (7) 7 (8) VEE 100 F 0.01 F Figure 7. High Frequency Plot http://onsemi.com 7 0.1 F 5 (5) 0.1 F SIGNAL UNDER TEST MC100EL1648 FIXED FREQUENCY MODE Only high quality surface−mount RF chip capacitors should be used in the tank circuit at high frequencies. These capacitors should have very low dielectric loss (high−Q). At a minimum, the capacitors selected should be operating at 100 MHz below their series resonance point. As the desired frequency of operation increases, the values of the tank capacitor will decrease since the series resonance point is a function of the capacitance value. Typically, the inductor is realized as a surface−mount chip or a wound coil. In addition, the lead inductance and board inductance and capacitance also have an impact on the final operating point. The following equation will help to choose the appropriate values for your tank circuit design. The MC100EL1648 external tank circuit components are used to determine the desired frequency of operation as shown in Figure 8, tank option #2. The tank circuit components have direct impact on the tuning sensitivity, IEE, and phase noise performance. Fixed frequency of the tank circuit is usually realized by an inductor and capacitor (LC network) that contains a high Quality factor (Q). The plotted curve indicates various fixed frequencies obtained with a single inductor and variable capacitor. The Q of the components in the tank circuit has a direct impact on the resulting phase noise of the oscillator. In general, when the Q is high the oscillator will result in lower phase noise. 570 f0 Measured Frequency (MHz) FREQUENCY (MHz) 470 Where LT = Total Inductance CT = Total Capacitance Figure 9 and Figure 10 represent the ideal curve of inductance/capacitance versus frequency with one known tank component. This helps the designer of the tank circuit to choose desired value of inductor/capacitor component for the wanted frequency. The lead inductance and board inductance and capacitance will also have an impact on the tank component values (inductor and capacitor). Calculated Frequency (MHz) 370 270 170 70 0 −30 0.3 300 500 1000 2000 50 10000 45 INDUCTANCE (nH) CAPACITANCE (pF) VCC 0.1 F 8 (10) 0.1 F 3 (1) 2 (14) 4 (3) 0.1 F FOUT Tank #2 6 (7) 7 (8) VEE 35 30 Inductance vs. Frequency with 5 pF Cap 25 20 15 5 1 (12) 0 400 5 (5) 700 1000 1300 160 FREQUENCY (MHz) Figure 9. Capacitor Value Known (5 pF) 100 F 0.01 F 0.1 F 50 0.1 F 45 40 CAPACITANCE (F) Test Point 40 10 C L 1 2 LT * CT L = Micro Metal torroid #T20−22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = 3.0−35 pF Variable Capacitance (@ 10 pF) Note 1 Capacitor for tank may be variable type. (See Tank Circuit #3.) Note 2 Use high impedance probe (> 1 M ). 8 pin (14 pin) lead package 35 30 Capacitance vs. Frequency with 4 nH Inductance 25 20 15 10 QL ≥ 100 5 Figure 8. Fixed Frequency LC Tank 0 400 700 1000 FREQUENCY (Hz) 1300 Figure 10. Inductor Value Known (4 nH) http://onsemi.com 8 160 MC100EL1648 VOLTAGE CONTROLLED MODE The tank circuit configuration presented in Figure 11, Voltage Controlled Varactor Mode, allows the VCO to be tuned across the full operating voltage of the power supply. Deriving from Figure 6, the tank capacitor, C, is replaced with a varactor diode whose capacitance changes with the voltage applied, thus changing the resonant frequency at which the VCO tank operates as shown in Figure 3, tank option #1. The capacitive component in Equation 1 also needs to include the input capacitance of the device and other circuit and parasitic elements. When operating the oscillator in the voltage controlled mode with Tank Circuit #1 (Figure 3), it should be noted that the cathode of the varactor diode (D), pin 8 (for 8 lead package) or pin 10 (for 14 lead package) should be biased at least 1.4 V above VEE. Typical transfer characteristics employing the capacitance of the varactor diode (plus the input capacitance of the device, about 6.0 pF typical) in the voltage controlled mode is shown in Plot 1, Dual Varactor MMBV609 Vin vs. Frequency. Figure 6, Figure 7, and Figure 8 show the accuracy of the measured frequency with the different variable capacitance values. The 1.0 k resistor in Figure 11 is used to protect the varactor diode during testing. It is not necessary as long as the dc input voltage does not cause the diode to become forward biased. The tuning range of the oscillator in the voltage controlled mode may be calculated as follows: 190 FREQUENCY (MHz) 170 150 130 CD(max) CS f max f min CD(min) CS 110 90 70 Where 50 0 2 4 6 8 f min 10 Vin, INPUT VOLTAGE (V) Figure 12. Plot 1. Dual Varactor MMBV609, VIN vs. Frequency Where CS = Shunt Capacitance (input plus external capacitance) VCC 0.1 F 8 (10) 2 (14) VIN Good RF and low−frequency bypassing is necessary on the device power supply pins. Capacitors on the AGC pin and the input varactor trace should be used to bypass the AGC point and the VCO input (varactor diode), guaranteeing only dc levels at these points. For output frequency operation between 1.0 MHz and 50 MHz, a 0.1 F capacitor is sufficient. At higher frequencies, smaller values of capacitance should be used; at lower frequencies, larger values of capacitance. At high frequencies, the value of bypass capacitors depends directly on the physical layout of the system. All bypassing should be as close to the package pins as possible to minimize unwanted lead inductance. Several different capacitors may be needed to bypass various frequencies. 4 (3) L* C CD = Varactor Capacitance as a function of bias voltage 0.1 F 3 (1) 1 K Tank #1 1 (12) 6 (7) 7 (8) VEE 100 F 0.01 F 0.1 F 1 2 ( L(CD(max) CS ) 5 (5) ** 0.1 F FOUT *Use high impedance probe (>1.0 Meg must be used). **The 1200 resistor and the scope termination impedance constitute a 25:1 attenuator probe. Coax shall be CT−070−50 or equivalent. L = Micro Metal torroid #T20−22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = MMBV609 8 pin (14 pin) lead package Figure 11. Voltage Controlled Varactor Mode http://onsemi.com 9 MC100EL1648 WAVE−FORM CONDITIONING − SINE OR SQUARE WAVE Figure 13. At frequencies above 100 MHz typical, it may be desirable to increase the tank circuit peak−to−peak voltage in order to shape the signal into a more square waveform at the output of the MC100EL1648. This is accomplished by tying a series resistor (1.0 k minimum) from the AGC to the most positive power potential (+5.0 V if a positive volt supply is used, ground if a −5.2 V supply is used). Figure 14 illustrates this principle. The peak−to−peak swing of the tank circuit is set internally by the AGC pin. Since the voltage swing of the tank circuit provides the drive for the output buffer, the AGC potential directly affects the output waveform. If it is desired to have a sine wave at the output of the MC100EL1648, a series resistor is tied from the AGC point to the most negative power potential (ground if positive volt supply is used, −5.2 V if a negative supply is used) as shown in +5.0Vdc 1 +5.0Vdc 14 10 1 3 14 10 Output 3 Output 1.0k min 12 5 7 12 8 5 7 Figure 13. Method of Obtaining a Sine−Wave Output 8 Figure 14. Method of Extending the Useful Range of the MC100EL1648 (Square Wave Output) http://onsemi.com 10 MC100EL1648 10 dB / DEC SPECTRAL PURITY 99.8 99.9 100.0 100.1 100.2 B.W. = 10 kHz, Center Frequency = 100 MHz Scan Width = 50 kHz/div, Vertical Scale = 10 dB/div Figure 15. Spectral Purity 0.1 F 2 (14) 8 (10) 10 F 3(1) 1200* 0.1 F L C 4 (3) SIGNAL UNDER TEST 5 (5) L = Micro Metal torroid #T20−22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = 3.0−35 pF Variable Capacitance (@ 10 pF) 0.1 F ** The 1200 resistor and the scope termination impedance constitute a 25:1 attenuator probe. Coax shall be CT−070−50 or equivalent. 1 (12) Tank #3 6 (7) 7 (8) VEE 100 F 0.01 F 0.1 F 8 pin (14 pin) Lead Package Spectral Purity Test Circuit Figure 16. Spectral Purity of Signal Output for 200 MHz Testing Q Zo = 50 D Receiver Device Driver Device Q Zo = 50 D 50 50 VTT VTT = VCC − 2.0 V Figure 17. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices.) http://onsemi.com 11 MC100EL1648 ORDERING INFORMATION Package Shipping† MC100EL1648D SOIC−8, Narrow Body 98 Units / Rail MC100EL1648DR2 SOIC−8, Narrow Body 2500 Tape & Reel TSSOP−8 100 Units / Rail Device MC100EL1648DT MC100EL1648DTR TSSOP−8 2500 Tape & Reel MC100EL1648M SOEAIJ−14 50 Units / Rail MC100EL1648MEL SOEAIJ−14 2000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Resource Reference of Application Notes AN1405/D − ECL Clock Distribution Techniques AN1406/D − Designing with PECL (ECL at +5.0 V) AN1503/D − ECLinPS I/O SPiCE Modeling Kit AN1504/D − Metastability and the ECLinPS Family AN1568/D − Interfacing Between LVDS and ECL AN1642/D − The ECL Translator Guide AND8001/D − Odd Number Counters Design AND8002/D − Marking and Date Codes AND8020/D − Termination of ECL Logic Devices AND8066/D − Interfacing with ECLinPS AND8090/D − AC Characteristics of ECL Devices http://onsemi.com 12 MC100EL1648 PACKAGE DIMENSIONS SOIC−8 NB D SUFFIX CASE 751−07 ISSUE AB NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 S B 1 0.25 (0.010) M Y M 4 K −Y− G C N DIM A B C D G H J K M N S X 45 SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) Z Y M X S J S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 TSSOP−8 DT SUFFIX CASE 948R−02 ISSUE A 8x 0.15 (0.006) T U K REF 0.10 (0.004) S 2X L/2 8 1 PIN 1 IDENT S T U S V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S 5 0.25 (0.010) B −U− L 0.15 (0.006) T U M M 4 A −V− F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D −W− G DETAIL E http://onsemi.com 13 DIM A B C D F G K L M MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 0.80 1.10 0.05 0.15 0.40 0.70 0.65 BSC 0.25 0.40 4.90 BSC 0 6 INCHES MIN MAX 0.114 0.122 0.114 0.122 0.031 0.043 0.002 0.006 0.016 0.028 0.026 BSC 0.010 0.016 0.193 BSC 0 6 MC100EL1648 PACKAGE DIMENSIONS SOIC EIAJ−14* M SUFFIX CASE 965−01 ISSUE O 14 NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION: MILLIMETER. 3 DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4 TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5 THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). LE 8 Q1 M E HE L 7 1 DETAIL P Z D VIEW P A e c A1 b 0.13 (0.005) M 0.10 (0.004) DIM A A1 b c D E e HE 0.50 LE M Q1 Z MILLIMETERS MIN MAX −−− 2.05 0.05 0.20 0.35 0.50 0.18 0.27 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 0 0.70 0.90 −−− 1.42 INCHES MIN MAX −−− 0.081 0.002 0.008 0.014 0.020 0.007 0.011 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 0 0.028 0.035 −−− 0.056 ECLinPS Plus is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 14 For additional information, please contact your local Sales Representative. MC100EL1648/D