APTGT100SK120T Buck chopper Fast Trench + Field Stop IGBT® Power Module NT C2 Q1 G1 E1 OUT 0/VBU S SENSE 0/VBU S NT C1 0/VBUS SENSE VBUS E1 G1 OUT OUT 0/VBUS NTC2 0/VBUS SENSE NTC1 Application • AC and DC motor control • Switched Mode Power Supplies Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 140 100 200 ±20 480 Tj = 125°C 200A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT100SK120T – Rev 0 May, 2005 VBUS VCES = 1200V IC = 100A @ Tc = 80°C APTGT100SK120T All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Td(off) Tf Eon Eoff Turn-off Delay Time Fall Time Turn on Energy Turn off Energy 5.0 Min Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage 1.4 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A R G = 3.9Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A R G = 3.9Ω Fall Time Td(on) Tr Min Test Conditions IRM Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 100A VGE = 0V trr Reverse Recovery Time IF = 100A VR = 600V Qrr Reverse Recovery Charge di/dt =2000A/µs Typ 1.7 2.0 5.8 Typ 7200 400 300 260 30 420 Unit 250 2.1 µA 6.5 400 V nA Max Unit V pF ns 70 290 50 ns 520 90 10 10 Min 1200 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C 100 1.6 1.6 Tj = 25°C 170 Tj = 125°C Tj = 25°C Tj = 125°C 280 9 18 APT website – http://www.advancedpower.com Max mJ Max 250 500 Unit V µA A 2.1 V ns µC 2-5 APTGT100SK120T – Rev 0 May, 2005 Electrical Characteristics APTGT100SK120T Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.26 0.48 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 1.5 °C/W V 150 125 100 4.7 160 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT100SK120T – Rev 0 May, 2005 Package outline (dimensions in mm) APTGT100SK120T Typical Performance Curve Output Characteristics (VGE=15V) 200 VGE =17V 150 TJ=125°C IC (A) IC (A) T J = 125°C TJ=25°C 150 Output Characteristics 200 100 VGE=13V VGE =15V 100 VGE=9V 50 50 0 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 200 175 TJ=125°C E (mJ) IC (A) 125 100 75 50 VCE = 600V VGE = 15V RG = 3.9 Ω TJ = 125°C 20 150 TJ =125°C 2 VCE (V) 3 4 Energy losses vs Collector Current 25 T J=25°C 1 15 Eon Eoff Er 10 Eon 5 25 0 0 5 6 7 8 9 10 11 0 12 25 50 Switching Energy Losses vs Gate Resistance 100 125 150 175 200 Reverse Bias Safe Operating Area 25 240 VCE = 600V V GE =15V IC = 100A T J = 125°C 15 Eon 200 160 IC (A) 20 E (mJ) 75 IC (A) VGE (V) Eoff 10 Er 120 80 5 VGE=15V T J=125°C RG=3.9 Ω 40 0 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 IGBT 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT100SK120T – Rev 0 May, 2005 Thermal Impedance (°C/W) 0.3 APTGT100SK120T Forward Characteristic of diode 200 VCE =600V D=50% RG=3.9 Ω TJ =125°C Tc=75°C 50 ZCS 40 ZVS TJ =25°C 150 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 30 TJ =125°C 100 20 50 Hard switching 10 T J=125°C TJ =25°C 0 0 0 20 40 60 80 IC (A) 100 120 0 140 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.5 0.9 0.4 0.3 Diode 0.7 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT100SK120T – Rev 0 May, 2005 rectangular Pulse Duration (Seconds)