CYSTEKEC MTD010P03V8-0-T6-G P-channel enhancement mode power mosfet Datasheet

Spec. No. : C391V8
Issued Date : 2016.11.24
Revised Date :
Page No. : 1/10
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTD010P03V8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
Equivalent Circuit
BVDSS
-30V
ID@ TC=25°C, VGS=-10V
-40A
ID@ TA=25°C, VGS=-10V
RDSON(MAX)@VGS=-10V, ID=-9A
-10A
11mΩ(typ.)
RDSON(MAX)@VGS=-4.5V, ID=-5A
16mΩ(typ.)
Outline
MTD010P03V8
DFN3×3
Pin 1
G:Gate S:Source D:Drain
Ordering Information
Device
MTD010P03V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTD010P03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391V8
Issued Date : 2016.11.24
Revised Date :
Page No. : 2/10
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V
Continuous Drain Current @ TC=100°C, VGS=-10V
Continuous Drain Current @ TA=25°C, VGS=-10V
Continuous Drain Current @ TA=70°C, VGS=-10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=0.1mH, ID=-50A, VDD=-15V
Repetitive Avalanche Energy @ L=0.05mH
TC=25℃
TC=100℃
Total Power Dissipation
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
VDS
VGS
-30
±25
-40
-25
-10
-8
-80 *1
-50
125 *4
2.5 *2
41
16
2.5 *3
1.6 *3
-55~+150
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
3
50 *3
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.
4. 100% tested by conditions of L=0.1mH, IAS=-10A, VGS=-10V, VDD=-15V
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
RDS(ON)
*1
GFS
*1
MTD010P03V8
Min.
Typ.
Max.
-30
-1.5
-
9.6
11
16
25
-3.0
±100
-1
-10
13
14
23
-
Unit
V
nA
μA
mΩ
S
Test Conditions
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±25V, VDS=0V
VDS=-24V, VGS=0V
VDS=-24V, VGS=0V, Tj=125°C
VGS=-20V, ID=-12A
VGS=-10V, ID=-9A
VGS=-4.5V, ID=-5A
VDS=-5V, ID=-10A
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391V8
Issued Date : 2016.11.24
Revised Date :
Page No. : 3/10
Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)
Symbol
Dynamic
Ciss
Coss
Crss
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Qg (VGS=10V) *1, 2
Qg (VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
Typ.
Max.
-
2481
233
148
13.8
17.4
84
19.2
46.7
22.3
8.6
8.8
3722
350
222
21
26
126
29
70
34
-
-
-0.73
15.4
7.6
-3
-12
-1
-
Unit
Test Conditions
pF
VDS=-15V, VGS=0V, f=1MHz
ns
VDD=-15V, ID=-12A,
VGS=-10V, RG=1Ω
nC
VDS=-15V, ID=-12A, VGS=-10V,
A
V
ns
nC
IF=-1A, VGS=0V
IF=-1A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTD010P03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391V8
Issued Date : 2016.11.24
Revised Date :
Page No. : 4/10
Recommended Soldering Footprint
unit : mm
MTD010P03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391V8
Issued Date : 2016.11.24
Revised Date :
Page No. : 5/10
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-BVDSS, Normalized Drain-Source
Breakdown Voltage
80
-I D, Drain Current (A)
10V, 9V, 8V, 7V,6V,5V
60
4V
40
3.5V
20
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
-VGS=3V
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Source Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VGS=0V
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1000
100
VGS=-4.5V
VGS=-10V
10
VGS=-20V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
1
0.01
0.1
1
-ID, Drain Current(A)
0
10
R DS(on) , Normalized Static Drain-Source
On-State Resistance
200
180
ID=-12A
160
4
8
12
16
-IS, Source Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(on) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
140
120
100
80
60
40
20
2
1.8
VGS=-10V, ID=-9A
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 11 mΩ typ.
0.6
0.4
0
0
MTD010P03V8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C391V8
Issued Date : 2016.11.24
Revised Date :
Page No. : 6/10
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VGS(th) , normliz Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
1.2
ID=-1mA
1
0.8
ID=-250μA
0.6
Crss
0.4
100
0
5
10
15
20
25
-VDS, Drain-Source Voltage(V)
-75 -50 -25
30
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
10
VDS=-24V
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Gate Charge Characteristics
100
10
1
VDS=-10V
Pulsed
TA=25°C
0.1
0.01
0.001
8
VDS=-15V
6
4
2
ID=-12A
0
0.01
0.1
1
-ID, Drain Current(A)
10
0
5
10
15 20 25 30 35 40
Qg, Total Gate Charge(nC)
45
50
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
12
100μs
10
1ms
10ms
1
100ms
1s
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=50°C/W, Single Pulse
DC
-I D, Maximum Drain Current(A)
100
-I D, Drain Current(A)
0
Tj, Junction Temperature(°C)
10
8
6
4
2
TA=25°C, VGS=-10V, RθJA=40°C/W
0
0.01
0.01
MTD010P03V8
0.1
1
10
-ID, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C391V8
Issued Date : 2016.11.24
Revised Date :
Page No. : 7/10
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
80
TJ(MAX) =150°C
TA=25°C
RθJA=50°C/W
250
70
-I D, Drain Current (A)
Peak Transient Power (W)
300
200
150
100
50
VDS=5V
60
50
40
30
20
10
0
0.0001 0.001
0
0.01
0.1
1
Pulse Width(s)
10
100
1000
0
2
4
6
-VGS, Gate-Source Voltage(V)
8
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTD010P03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391V8
Issued Date : 2016.11.24
Revised Date :
Page No. : 8/10
Reel Dimension
Carrier Tape Dimension
MTD010P03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391V8
Issued Date : 2016.11.24
Revised Date :
Page No. : 9/10
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTD010P03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391V8
Issued Date : 2016.11.24
Revised Date :
Page No. : 10/10
DFN3×3 Dimension
Marking:
D D
D
D
D010
P03
Date
Code
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
*: Typical
Millimeters
Min.
Max.
0.605
0.850
0.152 REF
0.000
0.050
2.900
3.100
2.300
2.600
2.900
3.100
3.150
3.450
1.535
1.935
DIM
A
A1
A2
D
D1
E
E1
E2
Inches
Min.
Max.
0.026
0.033
0.006 REF
0.000
0.002
0.114
0.122
0.091
0.102
0.114
0.122
0.124
0.136
0.060
0.076
DIM
b
e
L
L1
L2
L3
H
θ
Millimeters
Min.
Max.
0.200
0.400
0.550
0.750
0.300
0.500
0.180
0.480
0.000
0.100
0.000
0.100
0.315
0.515
9°
13°
Inches
Min.
Max.
0.008
0.016
0.022
0.030
0.012
0.020
0.007
0.019
0.000
0.004
0.000
0.004
0.012
0.020
9°
13°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTD010P03V8
CYStek Product Specification
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