IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 GenX3TM 1400V IGBTs w/ Diode Avalanche Rated VCES = 1400V IC110 = 28A VCE(sat) ≤ 3.60V TO-247 (IXGH) G Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 IF110 ICM TC TC TC TC 60 28 15 150 A A A A IA EAS TC = 25°C TC = 25°C 28 360 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load ICM = 120 @ VCES < VCE A PC TC = 25°C 300 W -55 ... +150 °C C Tab E Maximum Ratings = 25°C = 110°C = 110°C = 25°C, 1ms TJ PLUS247 (IXGX) G Tab G = Gate C = Collector 150 °C -55 ... +150 °C Features 300 260 °C °C z 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 6 10 g g Md FC Mounting Torque (IXGH & IXGK) Mounting Force (IXGX) Weight TO-247 & PLUS247 TO-264 Tab G C E TJM Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 E TO-264 (IXGK) Tstg TL TSOLD C z z z z E = Emitter Tab = Collector Optimized for Low Conduction and Switching Losses Square RBSOA Avalanche Rated Anti-Parallel Ultra Fast Diode High Current Handling Capability Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC 3.0 ICES VCE = VCES, VGE = 0V = 250μA, VCE = VGE 5.0 VCE = 0V, VGE = ±20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved Applications ±100 nA z z z z z 3.00 3.05 3.60 High Power Density Low Gate Drive Requirement V 50 μA 1 mA Note 2, TJ = 125°C IGES z V z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines DS99736A(11/10) IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = IC110, VCE = 10V, Note 1 12 Cies Coes VCE = 25V, VGE = 0V, f = 1 MHz 19 S 1830 pF 163 pF Cres 46 pF Qg(on) 88 nC Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Inductive load, TJ = 25°C 12 nC 38 nC 16 ns 36 ns Eon IC = IC110, VGE = 15V 3.6 mJ td(off) VCE = 960V, RG = 5Ω 190 Note 3 360 tfi Eoff 3.9 td(on) 16 400 ns ns 6.5 J ns tri Inductive load, TJ = 125°C 50 ns Eon IC = IC110, VGE = 15V 7.3 mJ td(off) VCE = 960V, RG = 5Ω tfi Eoff Note 3 215 ns 700 ns 6.5 mJ 0.42 °C/W RthJC RthCs 0.21 °C/W 0.15 °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IF = 20A, VGE = 0V, Note 1 trr IRM Characteristic Values Min. Typ. Max. 2.65 3.0 V V IF = 20A, VGE = 0V, -diF/dt = -200A/μs, 350 ns VR = 1200V, TJ = 125°C 18.5 A TJ = 150°C RthJC Notes: 0.90 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Ices measurement. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 TO-247 Outline 1 2 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC ∅P 3 e Terminals: 1 - Gate 3 - Emitted 2 - Collector PLUS247 Outline Terminals: TO-264 AA Outline Back Side Terminals: © 2010 IXYS CORPORATION, All Rights Reserved Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.83 2.29 1.91 5.21 2.54 2.16 .190 .090 .075 .205 .100 .085 b b1 b2 1.14 1.91 2.92 1.40 2.13 3.12 .045 .075 .115 .055 .084 .123 C D E e L L1 Q R 1 - Gate 2 - Collector 3 - Emitter 1 = Gate 2,4 = Collector 3 = Emitter Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 200 60 VGE = 15V 13V 11V 140 9V 40 30 7V 20 11V 120 100 9V 80 60 7V 40 10 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 5 10 20 VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 25 1.6 VGE = 15V 13V 11V VGE = 15V 1.4 VCE(sat) - Normalized 50 9V 40 30 7V 20 10 I C = 56A I C = 28A I C = 14A 1.2 1.0 0.8 5V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 5.5 -25 0 25 50 75 100 125 150 10 11 TJ - Degrees Centigrade VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 8 120 TJ = 25ºC 7 C TJ = - 40ºC 25ºC 125ºC 100 = 56A 28A 14A IC - Amperes I 6 VCE - Volts 15 VCE - Volts 60 IC - Amperes 13V 160 IC - Amperes IC - Amperes 50 VGE = 15V 180 5 80 60 4 40 3 20 2 0 5 6 7 8 9 10 11 12 13 14 15 VGE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 3 4 5 6 7 VGE - Volts 8 9 IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 Fig. 7. Transconductance Fig. 8. Gate Charge 28 16 24 14 I C = 28A I G = 10mA 12 16 VGE - Volts 20 g f s - Siemens VCE = 600V TJ = - 40ºC 25ºC 125ºC 12 8 10 8 6 4 4 2 0 0 0 20 40 60 80 100 0 120 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 140 f = 1 MHz 100 Cies 1,000 IC - Amperes Capacitance - PicoFarads 120 Coes 80 60 100 40 20 Cres 10 0 5 10 15 20 25 30 35 40 0 200 TJ = 125ºC RG = 5Ω dv / dt < 10V / ns 400 600 VCE - Volts 800 1000 1200 1400 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds © 2010 IXYS CORPORATION, All Rights Reserved 1 10 IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 Fig. 13. Inductive Swiching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 18 --- TJ = 125ºC , VGE = 15V I C 14 17 12 15 = 56A 10 11 I C = 28A 8 9 6 Eon ---- 12 VCE = 960V 10 7 4 Eoff 10 8 8 TJ = 125ºC 6 6 4 4 2 5 Eon - MilliJoules 13 Eon - MilliJoules 12 14 RG = 5Ω , VGE = 15V Eoff - MilliJoules VCE = 960V 14 Eoff - MilliJoules Eon - Eoff 16 19 2 TJ = 25ºC I C = 14A 2 10 20 30 40 50 60 20 25 30 35 40 45 50 55 IC - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Eoff ---- Eon RG = 5Ω , C 8 = 56A 6 I C = 28A 4 4 2 2 td(off) - - - 800 TJ = 125ºC, VGE = 15V VCE = 960V 10 t f i - Nanoseconds 6 t fi 750 700 600 I 650 C = 28A 400 I C = 56A 600 t d(off) - Nanoseconds I 1000 12 Eon - MilliJoules 8 60 800 VGE = 15V VCE = 960V 10 15 RG - Ohms 14 12 0 10 70 14 Eoff - MilliJoules 0 3 0 200 I C = 14A 0 25 35 45 55 65 75 85 95 105 115 0 125 550 30 40 50 60 70 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 900 350 td(off) - - - - RG = 5Ω , VGE = 15V 600 200 TJ = 25ºC 400 150 200 100 0 50 15 20 25 30 35 40 45 50 55 60 IC - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. t f i - Nanoseconds TJ = 125ºC t fi td(off) - - - - 280 RG = 5Ω , VGE = 15V VCE = 960V 700 600 250 220 I C = 28A 500 190 400 160 I C = 56A 300 130 200 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 100 125 t d(off) - Nanoseconds 250 t d(off) - Nanoseconds 800 310 800 300 VCE = 960V t f i - Nanoseconds 20 RG - Ohms t fi 10 10 TJ - Degrees Centigrade 1200 1000 0 0 IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current t ri td(on) - - - - TJ = 125ºC, VGE = 15V 120 140 100 160 I C 80 = 56A 120 60 80 I C 40 = 28A 40 20 0 10 20 30 40 50 60 t ri td(on) - - - - 32 RG = 5Ω , VGE = 15V 120 28 VCE = 960V 100 24 80 20 TJ = 25ºC 60 16 TJ = 125ºC 40 12 20 0 0 36 8 0 70 4 10 RG - Ohms t d(on) - Nanoseconds VCE = 960V 200 160 t d(on) - Nanoseconds t r i - Nanoseconds 240 140 t r i - Nanoseconds 280 15 20 25 30 35 40 45 50 55 60 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 180 40 160 t ri 32 VCE = 960V 120 28 100 24 I C = 56A 80 20 60 16 I C = 28A 40 t d(on) - Nanoseconds 140 t r i - Nanoseconds 36 td(on) - - - - RG = 5Ω , VGE = 15V 12 20 25 35 45 55 65 75 85 95 105 115 8 125 TJ - Degrees Centigrade © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: G_28N140B3H1(4A)11-29-10-B