Infineon IDD12SG60C 3rd generation thinq!tm sic schottky diode Datasheet

IDD12SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features
Product Summary
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
V DC
600
V
QC
19
nC
I F; T C< 130 °C
12
A
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
• Halogen-free according to IEC 61249-2-21 definition
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
Package
Marking
Pin 1
Pin 2
Pin 3
IDD12SG60C
PG-TO252-3
D12G60C
n.c.
A
C
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
IF
Value
T C<130 °C
12
Surge non-repetitive forward current, I F,SM
sine halfwave
T C=25 °C, t p=10 ms
59
T C=150 °C, t p=10 ms
51
I F,max
T C=25 °C, t p=10 µs
430
∫i 2dt
T C=25 °C, t p=10 ms
17
T C=150 °C, t p=10 ms
12
Non-repetitive peak forward current
i ²t value
Unit
A
A2s
Repetitive peak reverse voltage
V RRM
T j=25 °C
600
V
Diode dv/dt ruggedness
dv/ dt
VR= 0….480 V
50
V/ns
Power dissipation
P tot
T C=25 °C
125
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
Soldering temperature, reflow
soldering (max)
T sold
Rev. 2.0
reflow MSL1
page 1
260
2010-03-19
IDD12SG60C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.2
SMD version, device
on PCB, minimal
footprint
-
-
75
SMD version, device
on PCB, 6 cm2 cooling
area5)
-
50
-
600
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
Thermal resistance, junction ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V DC
I R=0.05 mA, T j=25 °C
Diode forward voltage
VF
I F=12 A, T j=25 °C
-
1.8
2.1
I F=12 A, T j=150 °C
-
2.2
-
V R=600 V, T j=25 °C
-
1
100
V R=600 V, T j=150 °C
-
4
1000
-
19
-
nC
-
-
<10
ns
pF
Reverse current
IR
V
µA
AC characteristics
Total capacitive charge
Qc
Switching time3)
tc
V R=400 V,I F≤I F,max,
di F/dt =200 A/µs,
T j=150 °C
Total capacitance
C
V R=1 V, f =1 MHz
-
310
-
V R=300 V, f =1 MHz
-
50
-
V R=600 V, f =1 MHz
-
50
-
1)
2)
J-STD20 and JESD22
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
3)
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
4)
Under worst case Zth conditions.
5)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air
6)
Rev. 2.0
Only capacitive charge occuring, guaranteed by design.
page 2
2010-03-19
IDD12SG60C
1 Power dissipation
2 Diode forward current
P tot=f(T C); parameter: RthJC(max)
I F=f(T C)4); T j≤175 °C; parameter: D = t p/T
130
125
120
110
100
100
90
75
70
0.1
I F [A]
P tot [W]
80
60
50
50
0.3
40
0.5
0.7
30
25
20
1
10
0
0
25
50
75
100
125
150
175
25
50
75
T C [°C]
100
125
150
175
T C [°C]
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current
mode
I F=f(VF); t p=400 µs; parameter:T j
I F=f(VF); t p=400 µs; parameter: T j
80
20
-55 °C
25 °C
100 °C
60
15
150 °C
I F [A]
I F [A]
-55 °C
10
40
25 °C
175 °C
100 °C
20
5
150 °C
175 °C
0
0
0
1
2
3
0
4
V F[V]
Rev. 2.0
2
4
6
8
V F [V]
page 3
2010-03-19
IDD12SG60C
5 Typ. capacitance charge vs. current slope
6 Typ. reverse current vs. reverse voltage
6)
I R=f(VR); parameter: T j
20
101
15
100
I R [µA]
Q c[nC]
Q C=f(di F/dt ) ; I F≤I F,max
10
10-1
175 °C
10
5
-2
150 °C
100 °C
25 °C
10-3
100
0
100
400
700
1000
200
di F/ dt [A/µs]
300
400
500
600
V R [V]
7 Typ. transient thermal impedance
8 Typ. capacitance vs. reverse voltage
Z thJC=f(t p); parameter: D = t P/T
C =f(V R); T C=25 °C, f =1 MHz
101
400
350
100
300
0.5
10-1
0.1
C [pF]
Z thJC [K/W]
250
0.2
0.05
0.02
150
0.01
10-2
200
0
100
50
10-3
10-6
0
10-5
10-4
10-3
10-2
10-1
100
t P [s]
Rev. 2.0
10-1
100
101
102
103
V R [V]
page 4
2010-03-19
IDD12SG60C
9 Typ. C stored energy
E C=f(V R)
10
8
E c [µJ]
6
4
2
0
0
100
200
300
400
500
600
V R [V]
Rev. 2.0
page 5
2010-03-19
IDD12SG60C
PG-TO252-3: Outline
Dimensions in mm/inches
Rev. 2.0
page 6
2010-03-19
IDD12SG60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 7
2010-03-19
Similar pages