IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior V DC 600 V QC 19 nC I F; T C< 130 °C 12 A • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF • Halogen-free according to IEC 61249-2-21 definition thinQ! 3G Diode designed for fast switching applications like: • SMPS e.g.; CCM PFC • Motor Drives; Solar Applications; UPS Type Package Marking Pin 1 Pin 2 Pin 3 IDD12SG60C PG-TO252-3 D12G60C n.c. A C Maximum ratings Parameter Symbol Conditions Continuous forward current IF Value T C<130 °C 12 Surge non-repetitive forward current, I F,SM sine halfwave T C=25 °C, t p=10 ms 59 T C=150 °C, t p=10 ms 51 I F,max T C=25 °C, t p=10 µs 430 ∫i 2dt T C=25 °C, t p=10 ms 17 T C=150 °C, t p=10 ms 12 Non-repetitive peak forward current i ²t value Unit A A2s Repetitive peak reverse voltage V RRM T j=25 °C 600 V Diode dv/dt ruggedness dv/ dt VR= 0….480 V 50 V/ns Power dissipation P tot T C=25 °C 125 W Operating and storage temperature T j, T stg -55 ... 175 °C Soldering temperature, reflow soldering (max) T sold Rev. 2.0 reflow MSL1 page 1 260 2010-03-19 IDD12SG60C Parameter Values Symbol Conditions Unit min. typ. max. - - 1.2 SMD version, device on PCB, minimal footprint - - 75 SMD version, device on PCB, 6 cm2 cooling area5) - 50 - 600 - - Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.05 mA, T j=25 °C Diode forward voltage VF I F=12 A, T j=25 °C - 1.8 2.1 I F=12 A, T j=150 °C - 2.2 - V R=600 V, T j=25 °C - 1 100 V R=600 V, T j=150 °C - 4 1000 - 19 - nC - - <10 ns pF Reverse current IR V µA AC characteristics Total capacitive charge Qc Switching time3) tc V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C Total capacitance C V R=1 V, f =1 MHz - 310 - V R=300 V, f =1 MHz - 50 - V R=600 V, f =1 MHz - 50 - 1) 2) J-STD20 and JESD22 All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA. 3) tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 4) Under worst case Zth conditions. 5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air 6) Rev. 2.0 Only capacitive charge occuring, guaranteed by design. page 2 2010-03-19 IDD12SG60C 1 Power dissipation 2 Diode forward current P tot=f(T C); parameter: RthJC(max) I F=f(T C)4); T j≤175 °C; parameter: D = t p/T 130 125 120 110 100 100 90 75 70 0.1 I F [A] P tot [W] 80 60 50 50 0.3 40 0.5 0.7 30 25 20 1 10 0 0 25 50 75 100 125 150 175 25 50 75 T C [°C] 100 125 150 175 T C [°C] 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current mode I F=f(VF); t p=400 µs; parameter:T j I F=f(VF); t p=400 µs; parameter: T j 80 20 -55 °C 25 °C 100 °C 60 15 150 °C I F [A] I F [A] -55 °C 10 40 25 °C 175 °C 100 °C 20 5 150 °C 175 °C 0 0 0 1 2 3 0 4 V F[V] Rev. 2.0 2 4 6 8 V F [V] page 3 2010-03-19 IDD12SG60C 5 Typ. capacitance charge vs. current slope 6 Typ. reverse current vs. reverse voltage 6) I R=f(VR); parameter: T j 20 101 15 100 I R [µA] Q c[nC] Q C=f(di F/dt ) ; I F≤I F,max 10 10-1 175 °C 10 5 -2 150 °C 100 °C 25 °C 10-3 100 0 100 400 700 1000 200 di F/ dt [A/µs] 300 400 500 600 V R [V] 7 Typ. transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p); parameter: D = t P/T C =f(V R); T C=25 °C, f =1 MHz 101 400 350 100 300 0.5 10-1 0.1 C [pF] Z thJC [K/W] 250 0.2 0.05 0.02 150 0.01 10-2 200 0 100 50 10-3 10-6 0 10-5 10-4 10-3 10-2 10-1 100 t P [s] Rev. 2.0 10-1 100 101 102 103 V R [V] page 4 2010-03-19 IDD12SG60C 9 Typ. C stored energy E C=f(V R) 10 8 E c [µJ] 6 4 2 0 0 100 200 300 400 500 600 V R [V] Rev. 2.0 page 5 2010-03-19 IDD12SG60C PG-TO252-3: Outline Dimensions in mm/inches Rev. 2.0 page 6 2010-03-19 IDD12SG60C Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 2010-03-19