AP4957GM-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Dual P MOSFET Package ▼ RoHS Compliant & Halogen-Free SO-8 S1 S2 G1 BVDSS -30V RDS(ON) 24mΩ ID -7.7A G2 Description AP4957 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. D2 D1 G2 G1 S2 S1 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter . Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage +20 V -7.7 A -6.1 A -30 A 2 W ID@TA=25℃ ID@TA=70℃ 3 Drain Current , VGS @ 10V 3 Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 62.5 ℃/W 1 201409022 AP4957GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. -30 - - V VGS=-10V, ID=-7A - 20 24 mΩ VGS=-4.5V, ID=-5A - 30 36 mΩ VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-7A - 12 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-7A - 27 45 nC Qgs Gate-Source Charge VDS=-24V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 18 - nC td(on) Turn-on Delay Time VDS=-15V - 14 - ns tr Rise Time ID=-1A - 11 - ns td(off) Turn-off Delay Time RG=3.3Ω - 38 - ns tf Fall Time VGS=-10V - 25 - ns Ciss Input Capacitance VGS=0V - 1670 2670 pF Coss Output Capacitance VDS=-25V - 530 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 435 - pF Rg Gate Resistance f=1.0MHz - 3 6 Ω Min. Typ. IS=-1.7A, VGS=0V - - -1.2 V . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=-7A, VGS=0V, - 35 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 34 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4957GM-HF 120 120 -10V o -7.0V 80 60 -5.0V -4.5V 40 20 80 -7.0V 60 -5.0V -4.5V 40 20 V G =-3.0V 0 V G =-3.0V 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 48 1.6 ID=-5A T A =25 ℃ ID=-7A V G =-10V 32 . Normalized RDS(ON) 1.4 40 RDS(ON) (mΩ) -10V 100 -ID , Drain Current (A) -ID , Drain Current (A) T A = 150 o C T A = 25 C 100 1.2 1.0 24 0.8 0.6 16 3 5 7 9 -50 11 0 50 100 150 o -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 7 2.0 6 1.5 Normalized VGS(th) -IS(A) 5 4 T j =150 o C T j =25 o C 3 1.0 2 0.5 1 0 0.0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4957GM-HF f=1.0MHz 10000 ID= -7A V DS = - 24 V 8 C (pF) -VGS , Gate to Source Voltage (V) 10 6 C iss 1000 4 C oss C rss 2 100 0 0 10 20 30 40 50 1 60 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 -ID (A) 100us 1ms Operation in this area limited by RDS(ON) 10 10ms 1 . 100ms 1s 0.1 T A =25 o C Single Pulse DC Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W 0.001 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 VG -ID , Drain Current (A) V DS =-5V T j =25 o C 30 T j =150 o C QG -4.5V QGS 20 QGD 10 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 AP4957GM-HF MARKING INFORMATION Part Number 4957GM YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 5