Silicon Photo Transistor OPB0606 1. Structure 1.1 Chip Size : 0.61mm X 0.61mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 155um X 155um - Base : 90um X 90um 2. Guaranteed Probed Electrical Characteristics Parameter Symbol ICEO Min Spectrum Sensitivity λ 450 Peak Sensing Wavelength C-E Voltage λp BVCEO 30 V ICE=500uA C-B Voltage BVCBO 40 V ICB=50uA E-B Voltage BVEBO 5 V IEB=50uA E-C Voltage BVECO 4 V IEC=50uA C-E Saturation Voltage VCES mV IC=5mA, IB=1mA Rise/Fall Time tr/tf us VCE=5V, IC=1mA, RL-1000Ω DC Current Gain hFE - VCE=10V, c=1mA C-E Leakage Current Typ Max Unit 100 nA 1100 nm (Ta=25℃) Condition VCE=10V 880 nm 300 15/15(Typ) 1,000 2,200 3. Hfe Bin Grade Bin Grade A B C MIN 1,000 1,200 1,500 MAX 1,500 1,800 2,200 4. Maximum Ratings Parameter Symbol Collector-Emitter Voltage VCEO Emitter-Collector Voltage VECO (Ta=25℃) Rating Unit 30 V 4 V AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr