PROCESS CP176 Central Power Transistor TM Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process MULTI EPITAXIAL PLANAR Die Size 203 x 227 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 38 x 76 MILS Emitter Bonding Pad Area 47 x 72 MILS Top Side Metalization Al - 50,000Å Back Side Metalization Ag - 10,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 240 PRINCIPAL DEVICE TYPES MJ15003 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP176 Typical Electrical Characteristics R2 (1 -August 2002)