TEMIC BZT55C13 Silicon epitaxial planar z-diode Datasheet

BZT55C...
TELEFUNKEN Semiconductors
Silicon Epitaxial Planar Z–Diodes
Features
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
Applications
94 9373
Voltage stabilization
Absolute Maximum Ratings
Tj = 25C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
RthJA300K/W
Type
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
175
–65...+175
Unit
mW
mA
C
C
Symbol
RthJA
Value
500
Unit
K/W
Maximum Thermal Resistance
Tj = 25C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Characteristics
Tj = 25C
Parameter
Forward voltage
Rev. A1: 12.12.1994
Test Conditions
IF=200mA
Type
Symbol
VF
Min
Typ
Max
1.5
Unit
V
1
BZT55C...
Type
BZT55C...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
1)
2
VZnorm
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
IZT for VZT 1) and rzjT
mA
V
5
2.28 to 2.56 < 85
5
2.5 to 2.9
< 85
5
2.8 to 3.2
< 90
5
3.1 to 3.5
< 90
5
3.4 to 3.8
< 90
5
3.7 to 4.1
< 90
5
4.0 to 4.6
< 90
5
4.4 to 5.0
< 80
5
4.8 to 5.4
< 60
5
5.2 to 6.0
< 40
5
5.8 to 6.6
< 10
5
6.4 to 7.2
<8
5
7.0 to 7.9
<7
5
7.7 to 8.7
<7
5
8.5 to 9.6
< 10
5
9.4 to 10.6
< 15
5
10.4 to 11.6 < 20
5
11.4 to 12.7 < 20
5
12.4 to 14.1 < 26
5
13.8 to 15.6 < 30
5
15.3 to 17.1 < 40
5
16.8 to 19.1 < 50
5
18.8 to 21.2 < 55
5
20.8 to 23.3 < 55
5
22.8 to 25.6 < 80
5
25.1 to 28.9 < 80
5
28 to 32
< 80
5
31 to 35
< 80
5
34 to 38
< 80
2.5
37 to 41
< 90
2.5
40 to 46
< 90
2.5
44 to 50
< 110
2.5
48 to 54
< 125
2.5
52 to 60
< 135
2.5
58 to 66
< 150
2.5
64 to 72
< 200
2.5
70 to 79
< 250
TELEFUNKEN Semiconductors
rzjk at
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
tp/T ≤ 100 ms, tighter tolerances available on request.
2)
IZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
IR and IR 2) at
A
A
< 100
< 50
< 10
< 50
<4
< 40
<2
< 40
<2
< 40
<2
< 40
<1
< 20
< 0.5
< 10
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<5
< 0.1
<5
< 0.1
<5
< 0.1
< 10
< 0.1
< 10
< 0.1
< 10
< 0.1
< 10
< 0.1
< 10
VR
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
TKVZ
%/K
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0,05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
at Tj = 150°C
Rev. A1: 12.12.1994
BZT55C...
TELEFUNKEN Semiconductors
Typical Characteristics (Tj = 25C unless otherwise specified)
1000
500
VZ – Voltage Change ( mV )
Ptot – Total Power Dissipation ( mW )
600
400
300
200
100
Tj = 25°C
100
IZ=5mA
10
0
1
40
80
120
200
160
Tamb – Ambient Temperature ( °C )
95 9602
1.3
VZtn – Relative Voltage Change
VZtn=VZt/VZ(25°C)
TKVZ=10
10–4/K
8
6
10–4/K
10–4/K
4
2
10–4/K
10–4/K
1.1
0
–2 10–4/K
1.0
–4
10–4/K
0.9
0.8
–60
0
60
120
180
240
Tj – Junction Temperature ( °C )
95 9599
10
15
20
25
VZ – Z-Voltage ( V )
Figure 2 : Typical Change of Working Voltage under Operating
Conditions at Tamb=25C
15
10
5
IZ=5mA
0
–5
0
10
20
30
40
50
VZ – Z-Voltage ( V )
95 9600
Figure 3 : Typical Change of Working Voltage vs. Junction
Temperature
Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage
200
100
IF – Forward Current ( mA )
C D – Diode Capacitance ( pF )
5
95 9598
Figure 1 : Total Power Dissipation vs. Ambient Temperature
1.2
0
TK VZ – Temperature Coefficient of VZ ( 10 –4 /K )
0
150
VR = 2V
Tj = 25°C
100
50
0
10
Tj = 25°C
1
0.1
0.01
0.001
0
5
10
15
20
VZ – Z-Voltage ( V )
95 9601
Figure 5 : Diode Capacitance vs. Z–Voltage
Rev. A1: 12.12.1994
25
0
95 9605
0.2
0.4
0.6
0.8
1.0
VF – Forward Voltage ( V )
Figure 6 : Forward Current vs. Forward Voltage
3
BZT55C...
TELEFUNKEN Semiconductors
80
40
IZ – Z-Current ( mA )
50
IZ – Z-Current ( mA )
100
Ptot=500mW
Tamb=25°C
60
40
20
Ptot=500mW
Tamb=25°C
30
20
10
0
0
0
4
8
12
16
20
15
VZ – Z-Voltage ( V )
95 9604
95 9607
20
25
30
35
VZ – Z-Voltage ( V )
Figure 8 : Z–Current vs. Z–Voltage
Figure 7 : Z–Current vs. Z–Voltage
r Z – Differential Z-Resistance ( W )
1000
IZ=1mA
100
5mA
10 10mA
Tj = 25°C
1
0
5
10
15
20
25
VZ – Z-Voltage ( V )
95 9606
Z thp – Thermal Resistance for Pulse Cond. (K/W)
Figure 9 : Differential Z–Resistance vs. Z–Voltage
1000
tp/T=0.5
100
tp/T=0.2
Single Pulse
10
RthJA=300K/W
DT=Tjmax–Tamb
tp/T=0.01
tp/T=0.1
tp/T=0.02
iZM=(–VZ+(VZ2+4rzjDT/Zthp)1/2)/(2rzj)
tp/T=0.05
1
10–1
100
101
102
tp – Pulse Length ( ms )
95 9603
Figure 10 : Thermal Response
4
Rev. A1: 12.12.1994
BZT55C...
TELEFUNKEN Semiconductors
Dimensions in mm
Cathode Identification
technical drawings
according to DIN
specifications
94 9372
0.35
0.30
Quadro MELF
Glass Case similar to
JEDEC DO 213 AA
Rev. A1: 12.12.1994
0.35
0.30
1.5
1.3
3.7
3.3
5
BZT55C...
TELEFUNKEN Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements and
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on the
environment.
Of particular concern is the control or elimination of releases into the atmosphere of those substances which are known
as ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) will soon severely restrict the use of ODSs and forbid
their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these
substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous
improvements to eliminate the use of any ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection
Agency ( EPA) in the USA and
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with and do not contain ozone depleting substances.
We reserve the right to make changes to improve technical design without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application,
the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax Number: 49 ( 0 ) 7131 67 2423
6
Rev. A1: 12.12.1994
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