Thinki FEP30DP 30.0 ampere dual fast efficient doubler polarity power rectifier Datasheet

FED30DP thru FED30JP
®
Pb
FED30DP thru FED30JP
Pb Free Plating Product
30.0 Ampere Dual Fast Efficient Doubler Polarity Power Rectifiers
TO-3P/TO-247AD
Unit: inch (mm)
Features
.050(1.25)
.045(1.15)
.839(21.3)
.819(20.8)
.798(20.25)
.777(19.75)
.126(3.2)
.110(2.8)
.030(0.75)
.017(0.45)
Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 gram approximately
.600(15.25)
.580(14.75)
.095(2.4)
Mechanical Data
.199(5.05)
.175(4.45)
.142(3.6)
.125(3.2)
.170(4.3)
.145(3.7)
.640(16.25)
.620(15.75)
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Ultrafast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
o
260 C, 0.16”(4.06mm)from case for 10 seconds
.087(2.2)
.070(1.8)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
Positive
Common Cathode
Preffix "FEP"
Negative
Common Anode
Preffix "FEN"
Doubler
Series Connection
Preffix "FED"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
FEP30DP
FEN30DP
FED30DP
FEP30GP
FEN30GP
FED30GP
FEP30JP
FEN30JP
FED30JP
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
V
Maximum RMS Voltage
VRMS
140
280
420
V
VDC
200
400
600
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
o
Current TC=125 C
IF(AV)
30.0
A
IFSM
300
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 15.0 A
VF
0.98
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
1.3
1.7
V
10
uA
500
uA
Maximum Reverse Recovery Time (Note 1)
Trr
60
nS
Typical junction Capacitance (Note 2)
CJ
150
pF
TJ, TSTG
-55 to +150
Operating Junction and Storage
Temperature Range
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1. 0A Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
FED30DP thru FED30JP
®
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
300
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
30
25
20
15
10
5
60 Hz Resistive or
Inductive load
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
250
200
150
100
50
0
0
50
100
150
1
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
150
FED30GP
FED30DP
15
FED30JP
1.0
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.2
0.4
0.6
0.8
1.0
1.2
100
NUMBER OF CYCLES AT 60Hz
o
LEAD TEMPERATURE, C
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
1.4
o
TJ=125 C
10
1
0.1
o
TJ=25 C
0.01
1.6
0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
.
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
.
.
Page 2/2
http://www.thinkisemi.com/
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