HAT3021R Silicon N/P Channel Power MOS FET Power Switching REJ03G0415-0200 Rev.2.00 Oct.06.2004 Features • Capable of 4.5 V gate drive • Low drive current • High density mounting Outline SOP-8 7 8 D D 2 G 5 6 D D 4 G 8 5 7 6 3 1 2 S1 S3 Nch Pch 4 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Ratings Nch Pch 80 ±20 3.4 20.4 3.4 1.5 –80 ±20 –2.6 –15.6 –2.6 1.5 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Rev.2.00, Oct.06.2004, page 1 of 10 Unit V V A A A W °C °C HAT3021R Electrical Characteristics (Ta = 25°C) • N Channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Rev.2.00, Oct.06.2004, page 2 of 10 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) Min 80 ±20 — — 1.0 — — 4.2 — — — — — — — Typ — — — — — 90 100 7.0 400 57 24 7.3 1.1 1.3 6.0 Max — — ± 10 1 2.5 115 145 — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns tr — — — — — 4.0 39 3.5 0.83 30 — — — 1.08 — ns ns ns V ns td(off) tf VDF trr Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 1.7 A, VGS = 10 V Note4 ID = 1.7 A, VGS = 4.5 V Note4 ID = 1.7 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 3.4 A VGS = 10 V, ID = 1.7 A VDD ≅ 30 V RL = 17.6 Ω Rg = 4.7 Ω IF = 3.4 A, VGS = 0 Note4 IF = 3.4 A, VGS = 0 diF/ dt = 100 A/ µs HAT3021R • P Channel Item Drain to source breakdown voltage Symbol V(BR)DSS Min –80 Typ — Max — Unit V Test Conditions ID = –10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) ±20 — — –1.0 — — 2.0 — — — — — — — — — — — — — 165 200 3.3 930 90 56 16 2.1 2.4 20 12 40 — ±10 –1 –2.5 210 290 — — — — — — — — — — V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –80 V, VGS = 0 VDS = –10 V, I D = –1 mA ID = –1.3 A, VGS = –10 V Note4 ID = –1.3 A, VGS = – 4.5 V Note4 ID = –1.3 A, VDS = –10 V Note4 VDS = –10 V VGS = 0 f = 1MHz tf VDF trr — — — 5.5 –0.83 30 — –1.08 — ns V ns Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Rev.2.00, Oct.06.2004, page 3 of 10 VDD = –25 V VGS = –10 V ID = -2.6 A VGS = –10 V, ID = –1.3 A VDD ≈ –30 V RL = 23.0 Ω Rg = 4.7 Ω IF = –2.6 A, VGS = 0 Note4 IF = –2.6 A, VGS = 0 diF/ dt =100A/µs HAT3021R Main Characteristics • N Channel Power vs. Temperature Derating 3.0 2.0 1.0 10 10 µs 0µ 1m s s 10 ID (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s PW DC 1 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 100 4.0 =1 0m s( Op era 0.1 Operation in 1s tio n( PW this area is limited by RDS(on) ho t) ≤1 No 0 ste 4 ) 0.01 Ta = 25°C 0 50 100 Ambient Temperature 150 200 0.001 1 shot Pulse 0.1 1 10 100 Drain to Source Voltage VDS (V) Ta (°C) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 3.2 V 5 3.0 V VGS = 2.8 V VDS = 10 V Pulse Test ID (A) 4.5 V 10 V Drain Current Drain Current Typical Transfer Characteristics 10 3.4 V ID (A) 10 5 Pulse Test 500 5 Drain to Source Voltage VDS Drain to Source Saturation Voltage vs Gate to Source Voltage Pulse Test 400 300 200 ID = 2 A 100 1A 0.5 A 0 15 5 10 20 Gate to Source Voltage VGS (V) Rev.2.00, Oct.06.2004, page 4 of 10 0 10 (V) 5 (V) Static Drain to Source on State Resistance vs. Drain Current 1000 Static Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 Tc = 75°C 25°C −25°C 2 3 4 Gate to Source Voltage VGS 100 VGS = 4.5 V 10 V 10 0.1 Pulse Test 1 Drain Current 10 ID (A) 100 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test ID = 0.5 A, 1 A, 2 A 200 150 VGS = 4.5 V 0.5 A, 1 A, 2 A 100 50 0 -25 10 V 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 100 30 Tc = –25°C 10 3 1 0.3 0.1 25°C 75°C 0.01 0.01 1 3 10 ID (A) Typical Capacitance vs. Drain to Source Voltage Ciss 500 50 20 di / dt = 100 A / µs VGS = 0, Ta = 25°C 1 3 Reverse Drain Current 200 100 50 Coss 20 Crss 10 5 VGS = 0 f = 1 MHz 2 0 10 IDR (A) VDD = 50 V 25 V 10 V VDS 12 40 8 20 0 4 VDD = 50 V 25 V 10 V 2 4 Gate Charge Rev.2.00, Oct.06.2004, page 5 of 10 6 8 Qg (nC) 40 50 0 10 td(off) 50 Switching Time t (ns) 60 VGS 16 VGS 80 30 Switching Characteristics (V) ID = 3.4 A 20 100 20 Gate to Source Voltage 100 10 Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) 0.3 1000 10 Drain to Source Voltage 0.03 0.1 Drain Current Body-Drain Diode Reverse Recovery Time 100 VDS = 10 V Pulse Test 0.03 Capacitance C (pF) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT3021R 20 tf 10 5 td(on) tr 2 VGS = 10 V, VDD = 30 V Rg = 4.7 Ω, duty ≤ 1 % 1 0.1 0.2 1 2 0.5 5 Drain Current ID (A) 10 HAT3021R Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 10 V 5 5V VGS = 0 V, –5 V Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 D=1 0.5 1 0.2 0.1 0.05 0.1 θch - f(t) = γs (t) x θch - f θch - f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40x40x1.6 mm) 0.02 1 0.0 lse t pu o h 1s 0.01 PDM D= 0.001 PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit 1000 90% D.U.T. RL Vin Vin 10 V V DS = 30 V Vout 10% 10% 90% td(on) Rev.2.00, Oct.06.2004, page 6 of 10 10000 Switching Time Waveform Vout Monitor Vin Monitor Rg 100 tr 10% 90% td(off) tf HAT3021R • P Channel Power vs. Temperature Derating 3.0 10 µs 2.0 1.0 10 ID (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 100 4.0 PW 1 DC 10 0 1 m µs s =1 0m s( Op era 0.1 1s tio n( PW Operation in this area is 0.01 limited by RDS(on) ho t) ≤ 1Note 0s 4 ) Ta = 25°C 0 50 100 Ambient Temperature 150 200 0.001 1 shot Pulse 0.1 1 10 100 Drain to Source Voltage VDS (V) Ta (°C) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics –5.0 Typical Transfer Characteristics –5 -10 V -4.5 V –4 –2.5 VGS = -2.8 V Drain Current ID (A) ID (A) Drain Current VDS = 10 V Pulse Test -3.0 V –3 –2 Tc = 75°C 25°C –1 −25°C Pulse Test –1000 –5 Drain to Source Voltage VDS Drain to Source Saturation Voltage vs Gate to Source Voltage Pulse Test –800 –600 –400 ID = –2 A –200 –1 A –0.5 A 0 –4 –8 –12 Gate to Source Voltage Rev.2.00, Oct.06.2004, page 7 of 10 0 –10 (V) –16 –20 VGS (V) –2 –4 –6 Gate to Source Voltage –8 VGS –10 (V) Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test Static Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 VGS = –4.5 V 100 10 –0.1 –10 V –1 Drain Current –10 ID (A) Static Drain to Source on State Resistance vs. Temperature 500 Pulse Test Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT3021R –2 A 400 ID = –0.5 A, –1 A 300 VGS = 4.5 V 200 –0.5 A, –1 A, –2 A 100 10 V 0 -25 Forward Transfer Admittance vs. Drain Current 10 5 Tc = –25°C 2 1 0.5 25°C 0.2 75°C 0.1 0.05 VDS = 10 V Pulse Test 0.02 0.01 0 0 25 50 75 100 125 150 Case Temperature Tc (°C) –0.03 –0.1 –0.3 Drain Current Reverse Recovery Time trr (ns) 100 Capacitance C (pF) 50 20 10 –0.1 di / dt = –100 A / µs VGS = 0, Ta = 25°C 2000 Ciss 1000 500 200 100 Coss 50 Crss 20 10 0 –0.3 –1 –3 –10 Reverse Drain Current IDR (A) –8 VGS –12 –80 –16 ID = –2.6 A 4 8 12 16 Gate Charge Qg (nC) Rev.2.00, Oct.06.2004, page 8 of 10 –20 20 VGS –4 50 Switching Time t (ns) VDS (V) VDD = –50 V –25 V –10 V VDD = –50 V –25 V –10 V –30 –40 –50 100 0 –40 –20 Switching Characteristics 0 –20 –10 Drain to Source Voltage VDS (V) Gate to Source Voltage VDS (V) ID (A) VGS = 0 f = 1 MHz Dynamic Input Characteristics Drain to Source Voltage –10 10000 5000 –100 0 –3 Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time –60 –1 20 td(off) tr td(on) 10 tf 5 2 1 –0.1 VGS = –10 V, VDS = –30 V Rg = 4.7 Ω, duty ≤ 1 % –1 Drain Current –10 ID (A) HAT3021R Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) –5.0 –10 V –5 V –2.5 VGS = 0V, 5 V Pulse Test 0 –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage –2.0 VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 θch - f(t) = γs (t) x θch - f θch - f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40x40x1.6 mm) 0.05 0.02 0.01 0.01 e uls PDM p ot D= h 1s PW T PW T 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Switching Time Test Circuit Vout Monitor Vin Monitor Rg Switching Time Waveform Vin 10% D.U.T. RL 90% Vin -10 V V DD = -30 V Vout td(on) Rev.2.00, Oct.06.2004, page 9 of 10 90% 90% 10% 10% tr td(off) tf HAT3021R Package Dimensions As of January, 2003 Unit: mm 3.95 4.90 5.3 Max 5 8 1 1.75 Max *0.22 ± 0.03 0.20 ± 0.03 4 0.75 Max + 0.10 6.10 – 0.30 1.08 1.27 *0.42 ± 0.08 0.40 ± 0.06 0.14 – 0.04 + 0.11 0˚ – 8˚ + 0.67 0.60 – 0.20 0.15 0.25 M *Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms — 0.085 g Ordering Information Part Name HAT3021R-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Oct.06.2004, page 10 of 10 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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