NHPD660, NRVHPD660 Switch Mode Power Rectifier DPAK Surface Mount Package www.onsemi.com These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • • • • Ultrafast 30 Nanosecond Recovery Time 175°C Operating Junction Temperature High Voltage Capability of 600 V Low Forward Drop Low Leakage Specified @ 125°C Case Temperature NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant PLANAR ULTRAFAST RECTIFIER 6.0 AMPERES, 600 VOLTS DPAK CASE 369C 1 4 3 Mechanical Characteristics MARKING DIAGRAM • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal AYWW NHP D660T Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Applications • Boost Rectifier for SMPS PFC Operating in Continuous Conduction • • • • A Y WW G 260°C Max. for 10 Seconds ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8 kV) Mode (CCM) LED Lighting Power Conversion Automotive Diesel Piezo Injection Thin and Ultra Thin Flat Panel Display Output Rectification in High Frequency High Output Voltage Applications Package Shipping† NHPD660T4G DPAK (Pb−Free) 2,500/Tape & Reel 16 mm NRVHPD660T4G DPAK (Pb−Free) 2,500/Tape & Reel 16 mm Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 0 1 Publication Order Number: NHPD660/D NHPD660, NRVHPD660 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TC = 145°C) IF(AV) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 135°C) IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, 60 Hz) IFSM A 6.0 A 12.0 A 60 Operating Junction and Storage Temperature Range TJ, Tstg °C −65 to +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Thermal Resistance − Junction−to−Case RqJC 4.2 °C/W Thermal Resistance − Junction−to−Ambient (Note 1) RqJA 95.7 °C/W 1. Rating applies when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS Test Conditions Symbol Typ Max Unit Instantaneous Forward Voltage (Note 2) Characteristic (iF = 6 A, TC = 125°C) (iF = 6 A, TC = 25°C) vF 1.45 2.4 1.8 3.0 V Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C) iR 35 0.035 300 30 mA Reverse Recovery Time (IF = 0.5 A, Irr = 0.25 A, IR = 1 A) (IF = 1 A, dIF/dt = −50 A/ms, VR = 30 V) trr − − 30 50 ns Reverse Recovery Time Peak Reverse Recovery Current Total Reverse Recovery Charge Softness Factor (IF = 6 A, dIF/dt = −200 A/ms, TC = 25°C) trr IRM Qrr S 30 2.3 37 2 50 3 50 − ns A nC − Reverse Recovery Time Peak Reverse Recovery Current Total Reverse Recovery Charge Softness Factor (IF = 6 A, dIF/dt = −200 A/ms, TC = 125°C) trr IRM Qrr S 45 5.5 150 0.35 − − − − ns A nC − (IF = 6 A, dIF/dt = 120 A/ms, TC = 25°C) tfr VFP − − 200 6 ns V Forward Recovery Time Forward Voltage Time 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NHPD660, NRVHPD660 TYPICAL CHARACTERISTICS 100 TA = 175°C iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 150°C 10 1 TA = 125°C 0.1 TA = 25°C 10 1 TA = 125°C 0.1 TA = 25°C 0.01 0.01 TA = −40°C 0.001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.5 1.5 1.0 2.0 2.5 3.5 3.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (A) VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−02 1.E−02 TA = 175°C 1.E−03 1.E−03 1.E−04 1.E−04 TA = 125°C 1.E−05 TA = 175°C 1.E−05 TA = 150°C 1.E−06 1.E−07 TA = 125°C TA = 150°C TA = 25°C 1.E−06 TA = 25°C 1.E−08 1.E−07 TA = −40°C 1.E−09 1.E−08 1.E−10 1.E−09 1.E−11 1.E−12 0 100 200 300 400 500 600 1.E−10 TA = −40°C 0 100 200 300 400 500 600 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 TJ = 25°C 100 10 0 TA = −40°C 0.001 IF(AV), AVERAGE FORWARD CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0 C, JUNCTION CAPACITANCE (pF) TA = 175°C TA = 150°C 20 40 60 80 100 120 140 160 180 200 12 11 DC 10 9 8 7 Square Wave 6 5 4 3 2 1 0 RqJC = 4.2°C/W 0 20 40 60 80 100 120 140 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating www.onsemi.com 3 160 180 NHPD660, NRVHPD660 IPK/IAV = 20 35 IPK/IAV = 10 Trr, REVERSE RECOVERY TIME (ns) PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 3.0 TJ = 175°C 35 Trr 30 2.5 IPK/IAV = 5 30 25 2.0 25 Vr = 30 V di/dt = 50 A/ms 20 1.5 dc 20 15 1.0 Square Wave 0.5 0 0 0.5 1.0 1.5 2.0 15 Qrr 10 10 5 5 0 0 0 2 1 3 4 5 6 7 8 IF(AV), AVERAGE FORWARD CURRENT (A) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation Figure 8. Typical Recovery Characteristics Qrr, RECOVERED STORED CHARGE (ns) TYPICAL CHARACTERISTICS 100 R(t) (C/W) 10 1 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0% 0.1 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (s) Figure 9. Thermal Response www.onsemi.com 4 1 10 100 1000 NHPD660, NRVHPD660 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C A A E b3 c2 B 4 L3 Z D 1 2 H DETAIL A 3 L4 b2 e c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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