Alpha AA022N1-00 21-24 ghz gaas mmic low noise amplifier Datasheet

21–24 GHz GaAs MMIC
Low Noise Amplifier
AA022N1-00
■ 19 dB Typical Small Signal Gain
2.245
2.091
1.829
■ 2.6 dB Typical Noise Figure at 23 GHz
1.605
■ Single Bias Supply Operation (4.5 V)
Chip Outline
1.084
Features
1.250
1.162
1.172
■ 0.25 µm Ti/Pd/Au Gates
■ 100% On-Wafer RF, DC and Noise
Figure Testing
0.493
■ 100% Visual Inspection to MIL-STD-883
MT 2010
0.000
0.124
0.087
Description
Alpha’s three-stage reactively-matched 21–24 GHz
MMIC low noise amplifier has typical small signal gain of
19 dB with a typical noise figure of 2.6 dB at 23 GHz.
The chip uses Alpha’s proven 0.25 µm low noise PHEMT
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process.
2.355
2.268
1.957
1.056
0.235
0.000
0.087
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)
6 VDC
Power In (PIN)
10 dBm
Junction Temperature (TJ)
175°C
Electrical Specifications at 25°C (VDS = 4.5 V)
Parameter
Condition
Drain Current
Symbol
Min.
IDS
16
Typ.3
Max.
Unit
35
50
mA
Small Signal Gain
F = 21–24 GHz
G
19
Noise Figure
F = 23 GHz
NF
2.6
2.8
dB
dB
Input Return Loss
F = 21–24 GHz
RLI
-7
-6
dB
-10
Output Return Loss
F = 21–24 GHz
RLO
-14
Output Power at 1 dB Gain Compression1
F = 23 GHz
P1 dB
8
dBm
ΘJC
92
°C/W
Thermal Resistance2
dB
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 12/99A
1
21–24 GHz GaAs MMIC Low Noise Amplifier
AA022N1-00
Typical Performance Data
Bias Arrangement
.01 µF
30
20
VD2
50 pF
S21
10
(dB)
0
S11
-10
-20
S22
-30
-40
-50
RF OUT
RF IN
S12
-60
.01 µF
17 18 19 20 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
Typical Small Signal Performance
S-Parameters (VD = 4.5 V)
4.5
21
20
NF 3.5 V
3.0
D
22
19
NF* 2.5 V-5 V
Gain (dB)
Noise Figure (dB)
23
Gain 4.5 V
NF 4.5 V
3.5
Circuit Schematic
24
Gain 3.5 V
4.0
For biasing on, adjust VDS from zero to the desired value
(4.5 V recommended). For biasing off, reverse the biasing on procedure.
25
Gain* 2.5 V-5 V
50 pF
VD1
18
2.5
17
G
16
2.0
15
Detail A
17 18 19 20 21 22 23 24 25 26 27 28 29 30
VD2
Frequency (GHz)
Typical Gain and Noise Figure
Performance for Three Bias Conditions
24
22
20
18
16
14
12
10
8
6
4
2
1.0
37
35
33
31
29
27
25
23
21
19
17
15
Gain
ID
NF
2.0
3.0
4.0
5.0
RF IN SEE
DETAIL
A
G
G
G
D
D
D
Drain Current (mA)
23 GHz Gain (dB) and
23 GHz Noise Figure (dB)
*Special Bias: VD1 = 2.5 V, VD2 = 5.0 V
6.0
VD1 and VD2 (V)
Typical Gain and Noise Figure
Performance vs. Drain Bias (VD1 = VD2)
2
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 12/99A
RF OUT
VD1
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