Preliminary Datasheet BCR10CM-12LB R07DS1029EJ0400 (Previous: REJ03G0455-0300) Rev.4.00 Feb 25, 2013 600V - 10A - Triac Medium Power Use Features Non-Insulated Type Planar Passivation Type IT (RMS) : 10 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) RENESAS Package code: PRSS0004AA-A A (Package name: TO-220) 4 4 2, 4 3 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 1 2 12 3 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Maximum Ratings Parameter Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Parameter RMS on-state current Symbol IT (RMS) Ratings 10 Unit A Surge on-state current ITSM 100 A I2t 41.6 A2s PGM PG (AV) VGM IGM Tj Tstg — 5 0.5 10 2 – 40 to +150 – 40 to +150 2.1 W W V A C C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass R07DS1029EJ0400 Rev.4.00 Feb 25, 2013 Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 128C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Page 1 of 8 BCR10CM-12LB Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 15 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT — — — — — — 30Note6 30Note6 30Note6 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2/0.1 — — V Rth (j-c) — — 1.8 C/W Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 Note4 (dv/dt)c 10/1 — — V/s Tj = 125C/150C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 1. 2. 3. 4. 5. 6. Gate open. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 tab 1.5 mm away from the molded case. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = – 5.0 A/ms 3. Peak off-state voltage VD = 400 V R07DS1029EJ0400 Rev.4.00 Feb 25, 2013 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 8 BCR10CM-12LB Preliminary Performance Curves 100 7 5 90 3 2 Surge On-State Current (A) 102 Tj = 150°C 101 7 5 3 2 Tj = 25°C 100 0.5 Gate Voltage (V) 5 3 2 101 7 5 3 2 100 7 5 3 2 1.0 1.5 2.0 2.5 3.0 3.5 80 70 60 50 40 30 20 10 0 100 4.0 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PGM = 5W PG(AV) = 0.5W IGM = 2A VGT = 1.5V IRGT I IFGT I, IRGT III 10–1 7 VGD = 0.1V 5 1 2 10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 7 5 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Rated Surge On-State Current 103 Typical Example 7 5 3 IRGT I, IRGT III 2 102 7 5 IFGT I 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) R07DS1029EJ0400 Rev.4.00 Feb 25, 2013 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7 103 2 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) Page 3 of 8 BCR10CM-12LB Preliminary Allowable Case Temperature vs. RMS On-State Current 160 28 140 24 360° Conduction Resistive, 20 inductive loads 16 12 8 4 0 2 4 8 10 12 14 16 120 Curves apply regardless of 100 conduction angle 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) 6 All fins are black painted aluminum and greased 140 120 × 120 × t2.3 120 100 100 × 100 × t2.3 80 60 × 60 × t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 4 6 8 10 12 14 160 Ambient Temperature (°C) 0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 32 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 16 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 106 7 5 3 2 Typical Example 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) R07DS1029EJ0400 Rev.4.00 Feb 25, 2013 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Page 4 of 8 Preliminary 103 7 5 3 2 Distribution 102 7 5 3 2 T2+, G– Typical Example 101 7 5 3 T +, G+ 2 2– – Typical Example T2 , G 100 –40 0 40 80 120 160 Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Junction Temperature (°C) 160 Typical Example Tj = 150°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 3 2 100 7 0 10 Minimum Characteristics Value Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz I Quadrant III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) R07DS1029EJ0400 Rev.4.00 Feb 25, 2013 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Latching Current (mA) Latching Current vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) BCR10CM-12LB 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 3 2 Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz III Quadrant I Quadrant Minimum 100 Characteristics Value 7 0 10 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 8 BCR10CM-12LB Preliminary Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits 6Ω Recommended Circuit Values Around The Triac Load 6Ω C1 A 6V V Test Procedure I R1 A 6V 330Ω V 330Ω Test Procedure II C0 R0 C1 = 0.1 to 0.47μF C0 = 0.1μF R1 = 47 to 100Ω R0 = 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS1029EJ0400 Rev.4.00 Feb 25, 2013 Page 6 of 8 BCR10CM-12LB Preliminary Package Dimensions JEITA Package Code SC-46 RENESAS Code PRSS0004AG-A Previous Code TO-220ABS MASS[Typ.] 2.1g Unit: mm 4.5 ± 0.2 2.8 ± 0.1 Package Name TO-220AB 9.9 ± 0.2 + 0.10 φ3.6 ± 0.2 13.08 ± 0.20 (3.00) 9.2 ± 0.2 15.7 ± 0.2 1.30 – 0.05 1.62 Max 0.80 ± 0.10 2.6 Max 2.54 2.54 + 0.10 0.50 – 0.05 10.0 ± 0.2 Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code ⎯ MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 φ3.6 3.8Max 12.5Min 16Max 7.0 3.2 1.3 1.0 0.8 0.5 2.54 2.6 4.5Max 2.54 2 R07DS1029EJ0400 Rev.4.00 Feb 25, 2013 Page 7 of 8 BCR10CM-12LB Preliminary Ordering Information Orderable Part Number BCR10CM-12LB#BB0 BCR10CM-12LBA8#BB0 Note: Packing Tube Tube Quantity 50 pcs. 50 pcs. 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