LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Rev. 1.8 Rev. 1.9 Description Initial Issue Revised typos in page 1,4,5(35ns to 45ns) Added ISB1 /IDR values when TA = 25℃ and TA = 40℃ Revised ISB1 (MAX) of SL grade Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Revised ISB1/IDR(MAX) when TA = 25℃ and TA = 40℃ Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Revised VDR Revised PACKAGE OUTLINE DIMENSION in page 11 Revised ORDERING INFORMATION in page 12 Revised VIL(max) from 0.6V to 0.8V Corrected ORDERING INFORMATION Typo. Deleted WRITE CYCLE Notes : 1.WE#, CE# must be high during all address transitions in page 9 Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 Issue Date Oct.30.2007 Nov.2.2007 Mar.30.2009 Apr.13.2009 Sep.11.2009 May.6.2010 Aug.25.2010 May 8.2014 May.20.2016 Jun.28.2016 LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 FEATURES GENERAL DESCRIPTION Fast access time : 45/55/70ns Low power consumption: Operating current : 50/40/30mA (TYP.) Standby current : 3A@5V(TYP.) LL/SL version 2A@3V(TYP.) SL version Single 4.5V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN.) Green package available Package : 44-pin 400 mil TSOP II 48-ball 6mm x 8mm TFBGA The LY626416 is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY626416 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY626416 operates from a single power supply of 4.5V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Operating Family Temperature 0 ~ 70℃ LY626416(LL) -20 ~ 80℃ LY626416(LLE) -40 ~ 85℃ LY626416(LLI) 0 ~ 70℃ LY626416(SL) LY626416(SLE) -20 ~ 80℃ -40 ~ 85℃ LY626416(SLI) Vcc Range Speed 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 45/55/70ns 45/55/70ns 45/55/70ns 45/55/70ns 45/55/70ns 45/55/70ns Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 3µA@5V 50/40/30mA 3µA@5V 50/40/30mA 3µA@5V 50/40/30mA 2µA@3V 3µA@5V 50/40/30mA 2µA@3V 3µA@5V 50/40/30mA 2µA@3V 3µA@5V 50/40/30mA Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc Vss A0-A15 DQ0-DQ7 Lower Byte DQ8-DQ15 Upper Byte CE# WE# OE# LB# UB# SYMBOL DESCRIPTION A0 - A15 Address Inputs DQ0 – DQ15 Data Inputs/Outputs DECODER I/O DATA CIRCUIT 64Kx16 MEMORY ARRAY CE# Chip Enable Input WE# Write Enable Input OE# Output Enable Input LB# Lower Byte Control UB# Upper Byte Control VCC Power Supply VSS Ground COLUMN I/O CONTROL CIRCUIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2 LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 PIN CONFIGURATION 1 44 A5 A3 2 43 A6 A2 3 42 A7 A1 4 41 OE# A0 5 40 UB# CE# 6 39 LB# DQ0 7 38 DQ15 DQ1 8 37 DQ14 DQ2 9 36 DQ13 DQ3 10 35 DQ12 Vcc 11 34 Vss 33 Vcc 32 DQ11 31 DQ10 30 DQ9 LY626416 XXXXXXXX XXXXXXXX A4 Vss 12 DQ4 13 DQ5 14 DQ6 15 DQ7 16 29 DQ8 WE# 17 28 NC A15 18 27 A8 A14 19 26 A9 A13 20 25 A10 A12 21 24 A11 NC 22 23 NC TSOP II A LB# OE# A0 A1 B DQ8 UB# A3 A4 CE# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D Vss DQ11 NC A7 DQ3 Vcc E Vcc DQ12 NC NC DQ4 Vss F DQ14 DQ13 A14 A15 DQ5 DQ6 G DQ15 NC A12 A13 WE# DQ7 A9 A10 NC A8 A11 NC LY626416 XXXXXXXX XXXXXXXX H A2 NC 1 2 3 4 5 6 TFBGA(See through with Top View) TFBGA(Top View) Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS SYMBOL VT1 VT2 Operating Temperature TA Storage Temperature Power Dissipation DC Output Current TSTG PD IOUT RATING -0.5 to 6.5 -0.5 to VCC+0.5 0 to 70(C grade) -20 to 80(E grade) -40 to 85(I grade) -65 to 150 1 50 UNIT V V ℃ ℃ W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# OE# H X L L L L L L L L X X H H L L L X X X WE# LB# X X H H H H H L L L X H L X L H L L H L I/O OPERATION DQ0-DQ7 DQ8-DQ15 High – Z High – Z High – Z High – Z High – Z High – Z High – Z High – Z DOUT High – Z High – Z DOUT DOUT DOUT DIN High – Z High – Z DIN DIN DIN UB# X H X L H L L H L L H = VIH, L = VIL, X = Don't care. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 SUPPLY CURRENT ISB1 ICC,ICC1 ICC,ICC1 ICC,ICC1 LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 DC ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITION PARAMETER Supply Voltage VCC *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current ILI VCC ≧ VIN ≧ VSS Output Leakage VCC ≧ VOUT ≧ VSS, ILO Current Output Disabled Output High Voltage VOH IOH = -1mA Output Low Voltage VOL IOL = 2mA - 45 Cycle time = Min. ICC CE# = VIL , II/O = 0mA - 55 Other pins at V or V IL IH Average Operating - 70 Power supply Current Cycle time = 1µ s ICC1 CE# = 0.2V , II/O = 0mA Other pins at 0.2V or VCC - 0.2V LL/LLE/LLI ISB1 CE# ≧VCC - 0.2V Others at 0.2V or VCC - 0.2V *4 MAX. 5.5 VCC+0.3 0.8 1 UNIT V V V µA - 1 µA 2.4 - 50 40 30 0.4 80 60 50 V V mA mA mA - 4 10 mA - 3 50 µA SL 25℃ *5 SLE *5 40℃ SLI - 2 5 µA - 2 5 µA SL SLE/SLI - 3 3 20 25 µA µA Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(TYP.) and TA = 25℃ 5. This parameter is measured at VCC = 3.0V Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 TYP. 5.0 - -1 *5 Standby Power Supply Current MIN. 4.5 2.4 - 0.2 -1 LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 6 8 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -2mA/4mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change LB#, UB# Access Time LB#, UB# to High-Z Output LB#, UB# to Low-Z Output (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z LB#, UB# Valid to End of Write SYM. tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH tBA tBHZ* tBLZ* SYM. tWC tAW tCW tAS tWP tWR tDW tDH tOW * tWHZ* tBW LY626416-45 MIN. MAX. 45 45 45 25 10 5 15 15 10 45 20 10 - LY626416-55 MIN. MAX. 55 55 55 30 10 5 20 20 10 55 25 10 - LY626416-70 MIN. MAX. 70 70 70 35 10 5 25 25 10 70 30 10 - UNIT LY626416-45 MIN. MAX. 45 40 40 0 35 0 20 0 5 15 35 - LY626416-55 MIN. MAX. 55 50 50 0 45 0 25 0 5 20 50 - LY626416-70 MIN. MAX. 70 60 60 0 55 0 30 0 5 25 60 - UNIT *These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 6 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE LB#,UB# tBA OE# tOE tOH tOHZ tBHZ tCHZ tOLZ tBLZ tCLZ Dout High-Z Data Valid High-Z Notes : 1.WE#is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low, LB# or UB# = low. 3.Address must be valid prior to or coincident with CE# = low, LB# or UB# = low transition; otherwise tAA is the limiting parameter. 4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 WRITE CYCLE 1 (WE# Controlled) (1,2,4,5) tWC Address tAW CE# tCW tBW LB#,UB# tAS tWP tWR WE# tWHZ Dout tOW High-Z (4) tDW Din (4) tDH Data Valid WRITE CYCLE 2 (CE# Controlled) (1,4,5) tWC Address tAW CE# tAS tWR tCW tBW LB#,UB# tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 WRITE CYCLE 3 (LB#,UB# Controlled) (1,4,5) tWC Address tAW tWR CE# tAS tCW tBW LB#,UB# tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Notes : 1.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low. 2.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 3.During this period, I/O pins are in the output state, and input signals must not be applied. 4.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 5.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION VCC for Data Retention VDR CE# ≧ VCC - 0.2V MIN. 1.5 - TYP. 1 MAX. 5.5 20 25℃ - 1 4 40℃ - 1 4 - 1 15 µA µA 0 - - ns tRC* - - ns LL Data Retention Current Chip Disable to Data Retention Time Recovery Time tRC* = Read Cycle Time IDR tCDR VCC = 1.5V CE# ≧ VCC - 0.2V SL Other pins at 0.2V or VCC-0.2V SL See Data Retention Waveforms (below) tR DATA RETENTION WAVEFORM Low Vcc Data Retention Waveform (1) (CE# controlled) VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ≧ Vcc-0.2V VIH Low Vcc Data Retention Waveform (2) (LB#, UB# controlled) VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR LB#,UB# VIH tR LB#,UB# ≧ Vcc-0.2V VIH Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10 UNIT V µA µA LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 PACKAGE OUTLINE DIMENSION 44-pin 400mil TSOP Ⅱ Package Outline Dimension SYMBOLS A A1 A2 b c D E E1 e L ZD y Θ DIMENSIONS IN MILLMETERS MIN. NOM. MAX. 1.20 0.05 0.10 0.15 0.95 1.00 1.05 0.30 0.45 0.12 0.21 18.212 18.415 18.618 11.506 11.760 12.014 9.957 10.160 10.363 0.800 0.40 0.50 0.60 0.805 0.076 o o o 0 3 6 DIMENSIONS IN MILS MIN. NOM. MAX. 47.2 2.0 3.9 5.9 37.4 39.4 41.3 11.8 17.7 4.7 8.3 717 725 733 453 463 473 392 400 408 31.5 15.7 19.7 23.6 31.7 3 o o o 0 3 6 Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 11 LY626416 Rev. 1.9 64K X 16 BIT LOW POWER CMOS SRAM 48-ball 6mm × 8mm TFBGA Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 12 LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 ORDERING INFORMATION Package Type Access Time Power Type Temperature Packing Range(℃) Type (Speed)(ns) 44Pin(400mil) 45 TSOP II Special 0℃~70℃ Ultra Low Power -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 55 Special 0℃~70℃ Ultra Low Power -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 70 Special 0℃~70℃ Ultra Low Power -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Tray LY626416ML-45SL Tape Reel LY626416ML-45SLT Tray LY626416ML-45SLE Tape Reel LY626416ML-45SLET Tray LY626416ML-45SLI Tape Reel LY626416ML-45SLIT Tray LY626416ML-45LL Tape Reel LY626416ML-45LLT Tray LY626416ML-45LLE Tape Reel LY626416ML-45LLET Tray LY626416ML-45LLI Tape Reel LY626416ML-45LLIT Tray LY626416ML-55SL Tape Reel LY626416ML-55SLT Tray LY626416ML-55SLE Tape Reel LY626416ML-55SLET Tray LY626416ML-55SLI Tape Reel LY626416ML-55SLIT Tray LY626416ML-55LL Tape Reel LY626416ML-55LLT Tray LY626416ML-55LLE Tape Reel LY626416ML-55LLET Tray LY626416ML-55LLI Tape Reel LY626416ML-55LLIT Tray LY626416ML-70SL Tape Reel LY626416ML-70SLT Tray LY626416ML-70SLE Tape Reel LY626416ML-70SLET Tray LY626416ML-70SLI Tape Reel LY626416ML-70SLIT Tray LY626416ML-70LL Tape Reel LY626416ML-70LLT Tray LY626416ML-70LLE Tape Reel LY626416ML-70LLET Tray LY626416ML-70LLI Tape Reel LY626416ML-70LLIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 13 Lyontek Item No. LY626416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.9 ORDERING INFORMATION Package Type Access Time Power Type Temperature Packing Range(℃) Type (Speed)(ns) 48-ball 45 (6mmx8mm) Special 0℃~70℃ Ultra Low Power TFBGA -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 55 Special 0℃~70℃ Ultra Low Power -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 70 Special 0℃~70℃ Ultra Low Power -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Tray LY626416GL-45SL Tape Reel LY626416GL-45SLT Tray LY626416GL-45SLE Tape Reel LY626416GL-45SLET Tray LY626416GL-45SLI Tape Reel LY626416GL-45SLIT Tray LY626416GL-45LL Tape Reel LY626416GL-45LLT Tray LY626416GL-45LLE Tape Reel LY626416GL-45LLET Tray LY626416GL-45LLI Tape Reel LY626416GL-45LLIT Tray LY626416GL-55SL Tape Reel LY626416GL-55SLT Tray LY626416GL-55SLE Tape Reel LY626416GL-55SLET Tray LY626416GL-55SLI Tape Reel LY626416GL-55SLIT Tray LY626416GL-55LL Tape Reel LY626416GL-55LLT Tray LY626416GL-55LLE Tape Reel LY626416GL-55LLET Tray LY626416GL-55LLI Tape Reel LY626416GL-55LLIT Tray LY626416GL-70SL Tape Reel LY626416GL-70SLT Tray LY626416GL-70SLE Tape Reel LY626416GL-70SLET Tray LY626416GL-70SLI Tape Reel LY626416GL-70SLIT Tray LY626416GL-70LL Tape Reel LY626416GL-70LLT Tray LY626416GL-70LLE Tape Reel LY626416GL-70LLET Tray LY626416GL-70LLI Tape Reel LY626416GL-70LLIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 14 Lyontek Item No. LY626416 Rev. 1.9 64K X 16 BIT LOW POWER CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 15