ETC1 GS82032T-5 64k x 32 2m synchronous burst sram Datasheet

Preliminary
GS82032T/Q-150/138/133/117/100/66
TQFP, QFP
Commercial Temp
Industrial Temp
64K x 32
2M Synchronous Burst SRAM
Features
Flow Through/Pipeline Reads
• FT pin for user-configurable flow through or pipeline
operation
• Single Cycle Deselect (SCD) operation
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock Control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP or QFP package
-150 -138 -133 -117 -100
Pipeline tCycle 6.6 7.25 7.5 8.5
10
3-1-1-1
tKQ
3.8
4
4
4.5
5
IDD
270 245 240 210 180
Flow tCycle 10.5 15
15
15
15
Through tKQ
9
9.7
10
11
12
2-1-1-1
IDD
170 120 120 120 120
150 MHz–66 MHz
9 ns–18 ns
3.3 V VDD
3.3 V and 2.5 V I/O
-66
12.5
6
150
20
18
95
Unit
ns
ns
mA
ns
ns
mA
Functional Description
Applications
The GS82032 is a 2,097,152-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications
ranging from DSP main store to networking chip set support.
The function of the Data Output register can be controlled by
the user via the FT mode pin/bump (Pin 14 in the TQFP, Bump
1F in the FP-BGA). Holding the FT mode pin/bump low,
places the RAM in Flow Through mode, causing output data to
bypass the Data Output Register. Holding FT high places the
RAM in Pipeline mode, activating the rising-edge-triggered
Data Output Register.
SCD Pipelined Reads
The GS82032 is an SCD (Single Cycle Deselect) pipelined
synchronous SRAM. DCD (Dual Cycle Deselect) versions are
also available. SCD SRAMs pipeline deselect commands one
stage less than read commands. SCD RAMs begin turning off
their outputs immediately after the deselect command has been
captured in the input registers.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the byte write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS82032 operates on a 3.3 V power supply and all inputs/
outputs are 3.3 V- and 2.5 V-compatible. Separate output
power (VDDQ) pins are used to decouple output noise from the
internal circuit.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Rev: 1.04 2/2001
1/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ByteSafe is a Trademark of Giga Semiconductor, Inc. (GSI Technology).
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
A6
A7
E1
E2
BD
BC
BB
BA
E3
VDD
VSS
CK
GW
BW
G
ADSC
ADSP
ADV
A8
A9
GS82032 100-Pin TQFP and QFP Pinout
LBO
A5
A4
VSS
DQC6
DQC5
DQC4
DQC3
VSS
VDDQ
DQC2
DQC1
FT
VDD
NC
VSS
DQD1
DQD2
VDDQ
VSS
DQD3
DQD4
DQD5
DQD6
VSS
VDDQ
DQD7
DQD8
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
64K
x
32
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Rev: 1.04 2/2001
NC
DQB8
DQB7
VDDQ
VSS
DQB6
DQB5
DQB4
DQB3
VSS
VDDQ
DQB2
DQB1
VSS
NC
VDD
ZZ
DQA1
DQA2
VDDQ
VSS
DQA3
DQA4
DQA5
DQA6
VSS
VDDQ
DQA7
DQA8
NC
A3
A2
A1
A0
NC
NC
VSS
VDD
NC
NC
A10
A11
A12
A13
A14
A15
NC
NC
DQC8
DQC7
VDDQ
2/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
TQFP Pin Description
Pin Location
Symbol
Type
Description
37, 36
A0, A1
I
Address field LSBs and Address Counter preset Inputs
35, 34, 33, 32, 100, 99, 82, 81, 44, 45,
46, 47, 48, 49
A2–A15
I
Address Inputs
52, 53, 56, 57, 58, 59, 62, 63
68, 69, 72, 73, 74, 75, 78, 79
2, 3, 6, 7, 8, 9, 12, 13
18, 19, 22, 23, 24, 25, 28, 29
DQA1–DQA8
DQB1–DQB8
DQC1–DQC8
DQD1–DQD8
I/O
Data Input and Output pins
16, 38, 39, 42, 43, 66, 50, 51, 80, 1, 30
NC
87
BW
I
Byte Write—Writes all enabled bytes; active low
93, 94
BA, BB
I
Byte Write Enable for DQA, DQB Data I/Os; active low
95, 96
BC, BD
I
Byte Write Enable for DQC, DQD Data I/Os; active low
89
CK
I
Clock Input Signal; active high
88
GW
I
Global Write Enable—Writes all bytes; active low
98, 92
E1, E3
I
Chip Enable; active low
97
E2
I
Chip Enable; active high
86
G
I
Output Enable; active low
83
ADV
I
Burst address counter advance enable; active low
84, 85
ADSP, ADSC
I
Address Strobe (Processor, Cache Controller); active low
64
ZZ
I
Sleep Mode control; active high
14
FT
I
Flow Through or Pipeline mode; active low
31
LBO
I
Linear Burst Order mode; active low
15, 41, 65, 91
VDD
I
Core power supply
5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90
VSS
I
I/O and Core Ground
4, 11, 20, 27, 54, 61, 70, 77
VDDQ
I
Output driver power supply
Rev: 1.04 2/2001
No Connect
3/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
GS82032 Block Diagram
Register
A0–An
D
Q
A0
A0
D0
Q0
A1
A1
D1
Q1
Counter
Load
A
LBO
ADV
Memory
Array
CK
ADSC
ADSP
Q
D
Register
GW
BW
BA
D
Q
Register
D
32
Q
BB
32
4
Register
D
Q
D
Q
Q
D
D
Register
Register
Q
Register
BC
BD
Register
D
Q
Register
E1
E2
E3
D
Q
Register
D
Q
FT
G
ZZ
Rev: 1.04 2/2001
1
Power Down
DQx1–DQx8
Control
4/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Mode Pin Functions
Mode Name
Pin
Name
Burst Order Control
LBO
Output Register Control
FT
Power Down Control
ZZ
State
Function
L
Linear Burst
H or NC
Interleaved Burst
L
Flow Through
H or NC
Pipeline
L or NC
Active
H
Standby, IDD = ISB
Note:
There are pull-up devices on LBO and FT pins and a pull down device on the ZZ pin, so those input pins can be
unconnected and the chip will operate in the default states as specified in the above tables.
Burst Counter Sequences
Interleaved Burst Sequence
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
1st address
00
01
10
11
2nd address
01
10
11
00
2nd address
01
00
11
10
3rd address
10
11
00
01
3rd address
10
11
00
01
4th address
11
00
01
10
4th address
11
10
01
00
Note: The burst counter wraps to initial state on the 5th clock.
Note: The burst counter wraps to initial state on the 5th clock.
Byte Write Truth Table
Function
GW
BW
BA
BB
BC
BD
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte A
H
L
L
H
H
H
2, 3
Write byte B
H
L
H
L
H
H
2, 3
Write byte C
H
L
H
H
L
H
2, 3, 4
Write byte D
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
L
X
X
X
X
X
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs BA, BB, BC, and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
Rev: 1.04 2/2001
5/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Synchronous Truth Table
Operation
Address
Used
State
Diagram
Key5
E1
E2
Deselect Cycle, Power Down
None
X
H
X
X
Deselect Cycle, Power Down
None
X
L
F
Deselect Cycle, Power Down
None
X
L
Read Cycle, Begin Burst
External
R
Read Cycle, Begin Burst
External
Write Cycle, Begin Burst
ADV
W3
DQ4
L
X
X
High-Z
L
X
X
X
High-Z
F
H
L
X
X
High-Z
L
T
L
X
X
X
Q
R
L
T
H
L
X
F
Q
External
W
L
T
H
L
X
T
D
Read Cycle, Continue Burst
Next
CR
X
X
H
H
L
F
Q
Read Cycle, Continue Burst
Next
CR
H
X
X
H
L
F
Q
Write Cycle, Continue Burst
Next
CW
X
X
H
H
L
T
D
Write Cycle, Continue Burst
Next
CW
H
X
X
H
L
T
D
Read Cycle, Suspend Burst
Current
X
X
H
H
H
F
Q
Read Cycle, Suspend Burst
Current
H
X
X
H
H
F
Q
Write Cycle, Suspend Burst
Current
X
X
H
H
H
T
D
Write Cycle, Suspend Burst
Current
H
X
X
H
H
T
D
ADSP ADSC
Notes:
1. X = Don’t Care, H = High, L = Low.
2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1.
3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5.
6.
7.
All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
Rev: 1.04 2/2001
6/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Simplified State Diagram
X
Deselect
W
R
Simple Burst Synchronous Operation
Simple Synchronous Operation
W
X
R
R
First Write
CW
First Read
CR
W
X
CR
R
R
X
Burst Write
Burst Read
X
CR
CW
CR
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, E3) and Write (BA, BB, BC, BD, BW, and GW) control
inputs, and that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
Rev: 1.04 2/2001
7/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Simplified State Diagram with G
X
Deselect
W
R
W
X
R
R
First Write
CR
CW
W
CW
W
X
First Read
X
CR
R
Burst Write
R
CR
CW
W
Burst Read
X
CW
CR
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a deselect cycle. Dummy read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
Rev: 1.04 2/2001
8/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 4.6
V
VDDQ
Voltage in VDDQ Pins
–0.5 to VDD
V
VCK
Voltage on Clock Input Pin
–0.5 to 6
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ+0.5 (≤ 4.6 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDD+0.5 (≤ 4.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–55 to 125
oC
TBIAS
Temperature Under Bias
–55 to 125
oC
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be
restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings,
for an extended period of time, may affect reliability of this component.
Recommended Operating Conditions
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
VDD
3.135
3.3
3.6
V
I/O Supply Voltage
VDDQ
2.375
2.5
VDD
V
1
Input High Voltage
VIH
1.7
—
VDD +0.3
V
2
Input Low Voltage
VIL
–0.3
—
0.8
V
2
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
3
TA
Ambient Temperature (Industrial Range Versions)
–40
25
85
°C
3
Notes:
1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75 V ≤ VDDQ ≤ 2.375 V (i.e., 2.5 V I/O)
and 3.6 V ≤ VDDQ ≤ 3.135 V (i.e., 3.3 V I/O), and quoted at whichever condition is worst case.
2. This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers.
3. Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
4. Input Under/overshoot voltage must be –2 V > Vi < VDD+2 V with a pulse width not to exceed 20% tKC.
Rev: 1.04 2/2001
9/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Undershoot Measurement and Timing
Overshoot Measurement and Timing
VIH
20% tKC
VDD+-2.0V
VSS
50%
50%
VDD
VSS-2.0V
20% tKC
VIL
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 3.3 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Control Input Capacitance
CI
VDD = 3.3 V
3
4
pF
Input Capacitance
CIN
VIN = 0 V
4
5
pF
COUT
VOUT = 0 V
6
7
pF
Output Capacitance
Note: This parameter is sample tested.
Package Thermal Characteristics
Rating
Layer Board
Symbol
TQFP Max
QFP Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
40
TBD
°C/W
1,2,4
Junction to Ambient (at 200 lfm)
four
RΘJA
24
TBD
°C/W
1,2,4
RΘJC
Junction to Case (TOP)
9
TBD
°C/W
3,4
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient.
Temperature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87.
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
4. For x18 configuration, consult factory.
Rev: 1.04 2/2001
10/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
AC Test Conditions
Parameter
Conditions
Input high level
2. 3V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
1.25 V
Output reference level
1.25 V
Output load
Fig. 1& 2
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.
3. Output Load 2 for tLZ, tHZ, tOLZ and tOHZ.
4. Device is deselected as defined by the Truth Table.
Output Load 2
Output Load 1
DQ
2.5 V
50Ω
30pF*
225Ω
DQ
5pF*
VT = 1.25 V
225Ω
* Distributed Test Jig Capacitance
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
IIL
VIN = 0 to VDD
–1 uA
1 uA
ZZ Input Current
IINZZ
VDD ≥ VIN ≥ VIH
0 V ≤ VIN ≤ VIH
–1 uA
–1 uA
1 uA
300 uA
Mode Pin Input Current
IINM
VDD ≥ VIN ≥ VIL
0 V ≤ VIN ≤ VIL
–300 uA
–1 uA
1 uA
1 uA
Output Leakage Current
IOL
Output Disable,
VOUT = 0 to VDD
–1 uA
1 uA
Output High Voltage
VOH
IOH = –4 mA, VDDQ = 2.375 V
1.7 V
Output High Voltage
VOH
IOH = –4 mA, VDDQ = 3.135 V
2.4 V
Output Low Voltage
VOL
IOL = 4 mA
Input Leakage Current
(except mode pins)
Rev: 1.04 2/2001
11/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
0.4 V
© 2000, Giga Semiconductor, Inc.
Rev: 1.04 2/2001
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
ZZ ≥ VDD – 0.2 V
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
Operating
Current
Standby
Current
Deselect
Current
-138
-133
-117
-100
-66
10
90
45
IDD
Pipeline
IDD
Flow-Thru
170
IDD
Flow-Thru
ISB
Flow-Thru
270
50
95
15
175
275
40
80
10
120
245
45
85
15
125
250
40
80
10
120
240
45
85
15
125
245
40
70
10
120
210
45
75
15
125
215
40
60
10
120
180
45
65
15
125
185
40
50
10
95
150
45
55
15
100
155
0
–40
0
–40
0
–40
0
–40
0
–40
0
–40
to
to
to
to
to
to
to
to
to
to
to
to
70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C
-150
IDD
Pipeline
Parameter Test Conditions Symbol
Operating Currents
mA
mA
mA
mA
mA
Unit
Preliminary
GS82032T/Q-150/138/133/117/100/66
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
12/23
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
AC Electrical Characteristics
Pipeline
Flow
Through
Parameter
Symbol
Clock Cycle Time
-150
-138
-133
-117
-100
-66
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
tKC
6.6
—
7.25
—
7.5
—
8.5
—
10
—
12.5
—
ns
Clock to Output Valid
tKQ
—
3.8
—
4
—
4
—
4.5
—
5
—
6
ns
Clock to Output Invalid
tKQX
1.5
—
2
—
2
—
2
—
2
—
2
—
ns
Clock to Output in Low-Z
1
tLZ
1.5
—
2
—
2
—
2
—
2
—
2
—
ns
Clock Cycle Time
tKC
10.5
—
15
—
15
—
15
—
15
—
20
—
ns
Clock to Output Valid
tKQ
—
9.0
—
9.7
—
10
—
11
—
12
—
18
ns
Clock to Output Invalid
tKQX
3
—
3
—
3
—
3
—
3
—
3
—
ns
Clock to Output in Low-Z
tLZ1
3
—
3
—
3
—
3
—
3
—
3
—
ns
Clock HIGH Time
tKH
1.8
—
1.9
—
1.9
—
2
—
3
—
4
—
ns
Clock LOW Time
tKL
1.8
—
1.9
—
1.9
—
2
—
3
—
4
—
ns
Clock to Output in High-Z
tHZ1
1.5
3.8
1.5
4
1.5
4
1.5
4
—
5
—
6
ns
G to Output Valid
tOE
—
3.8
—
4
—
4
—
4
—
5
—
6
ns
G to output in Low-Z
tOLZ1
0
—
0
—
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ1
—
4
—
4
—
4
—
4
—
5
—
6
ns
Setup time
tS
1.7
—
2
—
2
—
2
—
2
—
2
—
ns
Hold time
tH
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
ZZ setup time
tZZS2
5
—
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH2
1
—
1
—
1
—
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
20
—
20
—
20
—
ns
Notes:
1. These parameters are sampled and are not 100% tested
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Rev: 1.04 2/2001
13/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Write Cycle Timing
Single Write
Burst Write
Deselected
Write
CK
tS tH
tKH tKL
tKC
ADSP is blocked by E1 inactive
ADSP
tS tH
ADSC initiated write
ADSC
tS tH
ADV
tS tH
A0–An
ADV must be inactive for ADSP Write
WR2
WR1
WR3
tS tH
GW
tS tH
BW
tS tH
BA–BD
WR1
WR1
WR2
tS tH
WR3
WR3
E1 masks ADSP
E1
tS tH
Deselected with E2
E2
tS tH
E2 and E3 only sampled with ADSP or ADSC
E3
G
tS tH
DQA–DQD
Rev: 1.04 2/2001
Hi-Z
Write specified byte for 2A and all bytes for 2B, 2C& 2D
D1A
D2A
D2B
D2C
D2D
14/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
D3A
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Flow Through Read Cycle Timing
Single Read
Burst Read
tKL
CK
tKH
tS tH
tKC
ADSP is blocked by E1 inactive
ADSP
tS tH
ADSC initiated read
ADSC
tS tH
Suspend Burst
Suspend Burst
ADV
tS tH
A0–An
RD1
RD2
RD3
tS
tH
tS
tH
GW
BW
BA–BD
tS tH
E1 masks ADSP
E1
tS tH
E2 and E3 only sampled with ADSP or ADSC
Deselected with E2
E2
tS tH
E3
tOE
tOHZ
G
tKQX
tOLZ
DQA–DQD
Q1A
Hi-Z
Q2A
tKQX
Q2B
Q2C
Q2D
Q3A
tLZ
tHZ
tKQ
Rev: 1.04 2/2001
15/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Flow Through Read-Write Cycle Timing
Single Write
Single Read
Burst Read
CK
tS tH
tKC
tKH tKL
ADSP is blocked by E inactive
ADSP
tS tH
ADSC initiated read
ADSC
tS tH
ADV
tS tH
A0–An
WR1
RD1
RD2
tS tH
GW
tH
tS
BW
tS tH
BA–BD
WR1
tS tH
E1 masks ADSP
E1
tS tH
E2 and E3 only sampled with ADSP and ADSC
E2
tS tH
Deselected with E3
E3
tOE
tOHZ
G
tS
tKQ
DQA–DQD
Hi-Z
Q1A
tH
D1A
Q2A
Q2B
Q2C
Q2D
Q2A
Burst wrap around to its initial state
Rev: 1.04 2/2001
16/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Pipelined SCD Read Cycle Timing
Single Read
Burst Read
CK
tKH
tS tH
tKL
tKC
ADSP
ADSP is blocked by E1 inactive
tS tH
ADSC initiated read
ADSC
tS tH
Suspend Burst
ADV
tS tH
An
RD2
RD1
RD3
tS
tH
tS
tH
GW
BW
BWA–BWD
tS tH
E1 masks ADSP
E1
tS tH
E2 and E3 only sampled with ADSP or ADSC
Deselected with E2
E2
tS tH
E3
tOE
G
DQA–DQD
tOHZ
Hi-Z
tKQX
tKQX
tOLZ
Q1A
Q2A
Q2B
Q2C
Q2D
Q3A
tLZ
tHZ
tKQ
Rev: 1.04 2/2001
17/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Pipelined SCD Read-Write Cycle Timing
Single Write
Single Read
Burst Read
tKL
CK
tS tH
tKH
tKC
ADSP is blocked by E inactive
ADSP
tS tH
ADSC initiated read
ADSC
tS tH
ADV
tS tH
A0–An
WR1
RD1
RD2
tS tH
GW
tS
tH
BW
tS tH
BA–BWD
WR1
tS tH
E1 masks ADSP
E1
tS tH
E2 and E3 only sampled with ADSP and ADSC
E2
tS tH
Deselected with E3
E3
tOE
tOHZ
G
tS tH
tKQ
DQa–DQd
Rev: 1.04 2/2001
Hi-Z
Q1A
D1A
Q2A
18/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Q2B
Q2C
Q2D
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
CK
tS tH
tKC
tKH tKL
ADSP
ADSC
tZZS
ZZ
~ ~
~ ~
~ ~
~~
~ ~
~
Sleep Mode Timing Diagram
tZZH
tZZR
Snooze
Application Tips
Single and Dual Cycle Deselect
SCD devices force the use of “dummy read cycles” (read cycles that are launched normally, but that are ended with the output
drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance, but their use usually assures there
will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on
dummy cycles, and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address
boundary crossings), but greater care must be exercised to avoid excessive bus contention.
Rev: 1.04 2/2001
19/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
GS 82032 Output Driver Characteristics
60
Pull Down Drivers
40
20
VDDQ
I Out
0
I Out (mA)
VOut
VSS
-20
-40
Pull Up Drivers
-60
-80
-0.5
0
0.5
1
1.5
2
2.5
3
3.5
4
V Out (Pull Down)
VDDQ - V Out (Pull Up)
3.6V PD LD
Rev: 1.04 2/2001
3.3V PD LD
3.1V PD LD
3.1V PU LD
3.3V PU LD
20/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
3.6V PU LD
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
TQFP and QFP Package Drawing
θ
L
c
Pin 1
L1
D
D1
e
b
A1
A2
Y
E1
E
Symbol
Description
Min.
TQFP
Nom.
A1
Standoff
0.05
0.10
0.15
0.25
0.35
0.45
A2
Body Thickness
1.35
1.40
1.45
2.55
2.72
2.90
b
Lead Width
0.20
0.30
0.40
0.20
0.30
0.40
c
Lead Thickness
0.09
—
0.20
0.10
0.15
0.20
D
Terminal Dimension
21.9
22.0
22.1
22.95
23.2
23.45
D1
Package Body
19.9
20.0
20.1
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
17.0
17.2
17.4
E1
Package Body
13.9
14.0
14.1
13.9
14.0
14.1
e
Lead Pitch
—
0.65
—
—
0.65
—
L
Foot Length
0.45
0.60
0.75
.60
0.80
1.00
L1
Lead Length
—
1.00
—
1.60
—
Y
Coplanarity
—
—
0.10
—
—
0.10
θ
Lead Angle
0°
—
7°
0°
—
7°
Max
Min.
QFP
Nom.
Max
Notes:
1. All dimensions are in millimeters (mm).
2. Package width and length do not include mold protrusion
Rev: 1.04 2/2001
21/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Ordering Information
Speed2 TA
(MHz/ns) 3
Org
Part Number1
Type
Package
64K x 32
GS82032T-150
Pipeline/Flow Through
TQFP
150/9
C
64K x 32
GS820322T-138
Pipeline/Flow Through
TQFP
138/9.7
C
64K x 32
GS82032T-133
Pipeline/Flow Through
TQFP
133/10
C
64K x 32
GS82032T-4
Pipeline/Flow Through
TQFP
133/10
C
64K x 32
GS82032T-5
Pipeline/Flow Through
TQFP
100/12
C
64K x 32
GS82032T-6
Pipeline/Flow Through
TQFP
66/18
C
64K x 32
GS82032T-150I
Pipeline/Flow Through
TQFP
150/9
I
64K x 32
GS82032T-138I
Pipeline/Flow Through
TQFP
138/9.7
I
64K x 32
GS82032T-133I
Pipeline/Flow Through
TQFP
133/10
I
64K x 32
GS82032T-4I
Pipeline/Flow Through
TQFP
133/10
I
64K x 32
GS82032T-5I
Pipeline/Flow Through
TQFP
100/12
I
64K x 32
GS82032T-6I
Pipeline/Flow Through
TQFP
66/18
I
64K x 32
GS82032Q-150
Pipeline/Flow Through
QFP
150/9
C
64K x 32
GS82032Q-138
Pipeline/Flow Through
QFP
138/9.7
C
64K x 32
GS82032Q-133
Pipeline/Flow Through
QFP
133/10
C
64K x 32
GS82032Q-4
Pipeline/Flow Through
QFP
133/10
C
64K x 32
GS82032Q-5
Pipeline/Flow Through
QFP
100/12
C
64K x 32
GS82032Q-6
Pipeline/Flow Through
QFP
66/18
C
64K x 32
GS82032Q-150I
Pipeline/Flow Through
QFP
150/9
I
64K x 32
GS82032Q-138I
Pipeline/Flow Through
QFP
138/9.7
I
64K x 32
GS82032Q-133I
Pipeline/Flow Through
QFP
133/10
I
64K x 32
GS82032Q-4I
Pipeline/Flow Through
QFP
133/10
I
64K x 32
GS82032Q-5I
Pipeline/Flow Through
QFP
100/12
I
64K x 32
GS82032Q-6I
Pipeline/Flow Through
QFP
66/18
I
Status
Not Available
Not Available
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS82032T-100IT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which
are covered in this data sheet. See the GSI Technology web site(www.gsitechnology.com)for a complete listing of current offerings.
Rev: 1.04 2/2001
22/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Revision History
DS/DateRev. Code: Old;
New
GSGS82032 Rev 1.00 9/
1999A
Types of Changes
Revisions
Format or Content
Format
• Took out the Fine Pitch BGA information.
GSGS82032 Rev 1.00 9/
1999A; 1.01 11/1999B
• This was the first release of 2 Meg Burst Datasheets in the
new format. They included information for the Fine Pitch BGA
package.
Content
GSGS82032 Rev 1.01 11/
• Ordering information. Changed 128K x 32 to 64K x 32; Typo
• Ordering information. Changed “0” to go before “H” or “E” in
part number.
• Ordering information. Changed - 117 to -4, -100 to -5. and -66
to -6.
1999B; 1.02 1/2000C
Content
GS820321.02 1/
2000C;820321.03 2/2000D
Format/Content
• New GSI Logo
• Switched TKQ with TCycle in Flow Through part of table on
page 1.
Format/Content
• Updated format to comply with Technical Publication
Standards
• Changed all -4 references in ordering information table on
page 22 from 117/11 to 133/10.
820321.03 2/2000D;
82032_r1_04
Rev: 1.04 2/2001
23/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.