IRF IRHF53Z30 Radiation hardened power mosfet thru-hole (to-39) Datasheet

PD - 93793E
IRHF57Z30
JANSR2N7491T2
30V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
REF: MIL-PRF-19500/701
5
Product Summary
Part Number
IRHF57Z30
IRHF53Z30
TECHNOLOGY
™
Radiation Level RDS(on)
100K Rads (Si) 0.045Ω
300K Rads (Si) 0.045Ω
ID
QPL Part Number
12A* JANSR2N7491T2
12A* JANSF2N7491T2
IRHF54Z30
500K Rads (Si)
0.045Ω
12A* JANSG2N7491T2
IRHF58Z30
1000K Rads (Si)
0.056Ω
12A* JANSH2N7491T2
TO-39
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Identical Pre and Post Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
12*
10
48
25
0.2
±20
520
12
2.5
3.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
C
g
* Current is limited by package
For footnotes refer to the last page
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1
04/25/06
IRHF57Z30, JANSR2N7491T2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
30
—
—
V
VGS = 0V, ID = 1.0mA
—
0.03
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.045
Ω
2.0
12
—
—
—
—
—
—
4.0
—
10
25
V
S( )
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
65
20
10
25
100
35
30
—
VGS = 12V, ID = 10A Ã
Ω
Parameter
BVDSS
µA
nA
nC
ns
VDS = VGS, ID = 1.0mA
VDS ≥ 15V, IDS = 10A Ã
VDS= 24V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, I D = 12A
VDS = 15V
VDD = 15V, ID = 12A
VGS =12V, RG = 7.5Ω
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2055
936
35
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
12*
48
1.5
92
194
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 12A, VGS = 0V Ã
Tj = 25°C, IF = 12A, di/dt ≤100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
5.0
175
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHF57Z30, JANSR2N7491T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Test Conditions
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Min
Max
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-39)
Diode Forward Voltage Ã
30
2.0
—
—
—
—
—
4.0
100
-100
10
0.024
30
1.5
—
—
—
—
—
4.0
100
-100
25
0.03
V
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 24V, VGS =0V
VGS =12V, ID =10A
—
0.045
—
0.056
Ω
VGS =12V, I D =10A
—
1.5
1.5
V
VGS = 0V, IS =12A
—
nA
1. Part numbers IRHF57Z30 (JANSR2N7491T2), IRHF53Z30 (JANSF2N7491T2) and IRHF54Z30 (JANSG2N7491T2)
2. Part number IRHF58Z30 (JANSH2N7491T2)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @V GS=-10V @VGS=-15V @VGS=-20V
40
30
30
30
25
15
37
30
30
30
23
15
33
25
25
20
15
8
Energy
(MeV)
261
285
344
VDS
Cu
Br
I
LET
(MeV/(mg/cm 2))
28
37
60
35
30
25
20
15
10
5
0
Cu
Br
I
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF57Z30, JANSR2N7491T2
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
10
5.0V
100
1
10
100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
1000
TJ = 25 ° C
100
TJ = 150 ° C
10
V DS =15
15V
20µs PULSE WIDTH
5
7
9
11
13
15
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
5.0V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
TOP
ID = 12A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
2500
Ciss
2000
Coss
1500
1000
500
VGS , Gate-to-Source Voltage (V)
20
3500
C, Capacitance (pF)
IRHF57Z30, JANSR2N7491T2
ID = 12A
VDS = 24V
VDS = 15V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
1
10
100
0
10
VDS , Drain-to-Source Voltage (V)
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
ID, Drain-to-Source Current (A)
TJ = 25 ° C
ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
TJ = 150 ° C
10
1
V GS = 0 V
0.1
0.4
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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BY RDS(on)
100µs
10
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
2.4
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHF57Z30, JANSR2N7491T2
Pre-Irradiation
16
LIMITED BY PACKAGE
VGS
ID , Drain Current (A)
RD
VDS
RG
12
D.U.T.
+
-V DD
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
td(on)
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
PDM
0.02
0.1
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHF57Z30, JANSR2N7491T2
15V
L
VDS
D.U.T.
RG
IAS
VGS
20V
TOP
1250
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
BOTTOM
A
750
500
250
0
25
V(BR)DSS
ID
5.4A
9.6A
12A
1000
DRIVER
0.01Ω
tp
EAS , Single Pulse Avalanche Energy (mJ)
1500
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHF57Z30, JANSR2N7491T2
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 20V, starting TJ = 25°C, L= 7.2mH
Peak IL = 12A, VGS = 12V
 I SD ≤ 12A, di/dt ≤ 135A/µs,
VDD ≤ 30V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
24 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
8
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