Vishay BYG21M Fast avalanche smd rectifier Datasheet

BYG21K & BYG21M
Vishay General Semiconductor
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristic
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
DO-214AC (SMA)
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer, automotive and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
800 V, 1000 V
IFSM
30 A
IR
1.0 µA
VF
1.6 V
trr
120 ns
ER
20 mJ
TJ max.
150 °C
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
BYG21K
BYG21M
BYG21K
BYG21M
800
1000
UNIT
Maximum repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
1.5
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I(BR)R = 1 A, TJ = 25 °C
ER
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number: 88961
Revision: 11-Apr-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
V
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BYG21K & BYG21M
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
BYG21K
BYG21M
UNIT
Maximum instantaneous
forward voltage (1)
IF = 1 A
IF = 1.5 A
TJ = 25 °C
VF
1.5
1.6
V
Maximum reverse current
VR = VRRM
TJ = 25 °C
TJ = 100 °C
IR
1
10
µA
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
120
ns
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to lead TL = const.
Typical thermal resistance, junction to ambient
BYG21K
BYG21M
UNIT
RθJL
25
°C/W
RθJA
150 (1)
125 (2)
100 (3)
°C/W
Notes:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu
ORDERING INFORMATION (Example)
UNIT WEIGHT (g)
PACKAGE CODE
BASE Q’TY
DELIVERY MODE
BYG21K-E3/TR
PREFERRED P/N
0.064
TR
1800
7" diameter plastic tape and reel
BYG21K-E3/TR3
0.064
TR3
7500
13" diameter plastic tape and reel
BYG21KHE3/TR (1)
0.064
TR
1800
7" diameter plastic tape and reel
BYG21KHE3/TR3 (1)
0.064
TR3
7500
13" diameter plastic tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.6
10
Average Forward Current (A)
Forward Current (A)
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
RθJA = 25 K/W
1.4
VR = VRRM
Half Sine-Wave
1.2
1.0
RθJA = 125 K/W
0.8
0.6
RθJA = 150 K/W
0.4
0.2
0.001
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
25
50
75
100
125
150
Forward Voltage (V)
Ambient Temperature (°C)
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Max. Average Forward Current vs. Ambient Temperature
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88961
Revision: 11-Apr-08
BYG21K & BYG21M
Vishay General Semiconductor
200
100
Reverse Recovery Charge (nC)
Reverse Current (µA)
VR = VRRM
10
TA = 125 °C
150
TA = 100 °C
TA = 75 °C
100
TA = 50 °C
TA = 25 °C
50
IR = 0.5 A, iR = 0.125 A
1
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
Figure 3. Reverse Current vs. Junction Temperature
Figure 6. Max. Reverse Recovery Charge vs. Forward Current
Thermal Resistance for Pulse Cond. (K/W)
Forward Current (A)
120
Reverse Power Dissipation (mW)
0
Junction Temperature (°C)
VR = VRRM
100
PR - Limit
at 100 % VR
80
60
PR - Limit
at 80 % VR
40
20
0
25
50
75
100
125
150
1000
125 K/W DC
100
tP/T = 0.5
tP/T = 0.2
tP/T = 0.1
10
tP/T = 0.05
tP/T = 0.02
Single Pulse
tP/T = 0.01
1
10-5
10-4
10-3
10-2
10-1
100
Junction Temperature (°C)
Pulse Length (s)
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
Figure 7. Thermal Response
101
102
25
Diode Capacitance (pF)
f = 1 MHz
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number: 88961
Revision: 11-Apr-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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BYG21K & BYG21M
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208
(5.28) REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88961
Revision: 11-Apr-08
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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