CBR10F-010P SERIES FAST RECOVERY SILICON BRIDGE RECTIFIERS 10 AMP, 100 THRU 600 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR10F-010P series devices are silicon, single phase, full wave bridge rectifiers designed for fast recovery applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals. MARKING: FULL PART NUMBER CASE FP MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL -010P Peak Repetitive Reverse Voltage VRRM 100 DC Blocking Voltage VR 100 RMS Reverse Voltage Average Forward Current (TC=60°C) Peak Forward Surge Current RMS Isolation Voltage (case to lead) Operating and StorageJunction Temperature Thermal Resistance VR(RMS) IO IFSM Viso TJ, Tstg ΘJC ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C) SYMBOL TEST CONDITIONS IR VR=Rated VRRM VF IF=5.0A trr trr IF=0.5A, IR=1.0A, IF=0.5A, IR=1.0A, 70 Irr=0.25A (100V, 200V, 400V) Irr=0.25A (600V) MIN CBR10F -020P -040P 200 400 -060P 600 UNITS V 200 400 600 V 140 280 420 V 10 A 200 A 2500 Vac -65 to +150 °C 1.5 °C/W MAX 10 UNITS μA 1.3 V 200 ns 350 ns R1 (4-November 2013) CBR10F-010P SERIES FAST RECOVERY SILICON BRIDGE RECTIFIERS 10 AMP, 100 THRU 600 VOLT CASE FP - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (4-November 2013) w w w. c e n t r a l s e m i . c o m