Vishay MBR20100CT-E3 Dual common-cathode high voltage trench mos barrier schottky rectifier Datasheet

MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
www.vishay.com
Vishay General Semiconductor
Dual Common-Cathode High Voltage
Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS
®
• Trench MOS Schottky technology
TO-220AB
ITO-220AB
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
2
MBR2090CT
MBR20100CT
3
1
PIN 1
PIN 2
PIN 3
CASE
MBRF2090CT
MBRF20100CT
PIN 1
1
2
3
PIN 2
TO-263AB
K
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
2
1
MBRB2090CT
MBRB20100CT
PIN 2
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 3
PIN 1
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
MECHANICAL DATA
K
Case: TO-220AB, ITO-220AB, TO-263AB
HEATSINK
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
90 V to 100 V
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
IFSM
150 A
Polarity: As marked
VF
0.65 V
Mounting Torque: 10 in-lbs maximum
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variation
Common cathode



per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
SYMBOL
MBR2090CT
MBR20100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
PARAMETER
Maximum average forward rectified current at TC = 133 °C
total device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
IFSM
150
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
EAS
130
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
VAC
1500
V
TJ, TSTG
-65 to +150
°C
Revision: 10-May-16
Document Number: 89033
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage 
per diode
SYMBOL
IF = 10 A
TC = 25 °C
IF = 10 A
TC = 125 °C
IF = 20 A
TC = 125 °C
UNIT
0.80
VF (1)
V
0.65
0.75
TJ = 25 °C
Maximum reverse current per diode at working
peak reverse voltage
MAX.
IR (2)
TJ = 125 °C
100
µA
6.0
mA
UNIT
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
RJA
60
-
60
RJC
2.0
3.5
2.0
Typical thermal resistance per diode
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR20100CT-E3/4W
1.88
4W
50/tube
Tube
ITO-220AB
MBRF20100CT-E3/4W
1.75
4W
50/tube
Tube
TO-263AB
MBRB20100CT-E3/4W
1.38
4W
50/tube
Tube
TO-263AB
MBRB20100CT-E3/8W
1.38
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
160
MBRF
16
MBR &
MBRB
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or Inductive Load
12
8
4
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
140
120
100
80
60
40
0
0
50
100
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
150
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 10-May-16
Document Number: 89033
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
www.vishay.com
Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
10
1
MBR(B)
0.1
0.01
1.0
0.1
1
100
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance
Per Diode
100
10
TJ = 150 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Junction to Case
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
Junction to Case
1
0.1
0.01
MBRF
0.001
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Per Diode
Fig. 7 - Typical Transient Thermal Impedance
Per Diode
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1 MHz
Vsig = 50 mVp-p
1000
100
10
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Per Diode
Revision: 10-May-16
Document Number: 89033
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.404 (10.26)
0.384 (9.75)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.076 Ref.
(1.93) Ref.
1
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
3
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
TO-263AB
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.110 (2.79)
0.100 (2.54)
0.035 (0.89)
0.025 (0.64)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
K
7° Ref.
0.057 (1.45)
0.045 (1.14)
K
1
7° Ref.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.350 (8.89)
0.330 (8.38)
3
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.411 (10.45)
0.380 (9.65)
2
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.205 (5.20)
0.195 (4.95)
0.671 (17.04)
0.651 (16.54)
PIN
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
2
0.624 (15.85)
0.591 (15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
7° Ref.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.160 (4.06)
0.140 (3.56)
0.104 (2.65)
0.096 (2.45)
0.110 (2.79)
0.100 (2.54)
0.076 Ref.
(1.93) Ref.
45° Ref.
0.600 (15.24)
0.580 (14.73)
PIN
2
0.190 (4.83)
0.170 (4.32)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 10-May-16
Document Number: 89033
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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
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Revision: 08-Feb-17
1
Document Number: 91000
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