TGS FQP50N06 60v n-channel mosfet Datasheet

TIGER ELECTRONIC CO.,LTD
Product specification
FQP50N06
60V N-Channel MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s
proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well suited for low voltage applications such as
automotive, DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
O
Parameter
l
Value
Unit
VDSS
60
V
Drain Current - Continuous
ID
50
A
Drain Current - Pulsed
IDM
200
A
VGSS
±25
V
Power Dissipation
PD
120
W
Max. Operating Junction Temperature
Tj
150
o
Tstg
-55~150
o
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature
C
C
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Drain-Source Breakdown Voltage
Symbol
Test Conditions
BVDSS VGS = 0V, ID =250μA
Min.
Typ.
Max.
Unit
60
—
—
V
Zero Gate Voltage Drain Current
IDSS
VDS =60V, VGS =0V
—
—
1.0
uA
Gate-Body Leakage Current, Forward
IGSSF
VGS =25V, VDS =0V
—
—
100
nA
Gate-Body Leakage Current, Reverse
IGSSR
VGS = -25V, VDS =0V
—
—
-100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID =250μA
2.0
—
4.0
V
Static Drain-Source On-Resistance
RDS(on) VGS = 10 V, ID = 25 A
—
18
22
mΩ
Forward Transconductance
gFS
VDS = 25 V, ID = 25 A
—
22
—
S
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 50 A
—
—
1.5
V
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