IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelEmitterControlleddiode Features: C HighspeedH3technologyoffers: •Highefficiencyinhardswitchingandresonanttopologies •10µsecshortcircuitwithstandtimeatTvj=175°C •Easyparallelingcapabilityduetopositivetemperature coefficientinVCEsat •LowEMI •LowGateChargeQG •Verysoft,fastrecoveryfullcurrentanti-paralleldiode •MaximumjunctiontemperatureTvjmax=175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •IndustrialUPS •Charger •EnergyStorage •Three-levelSolarStringInverter •Welding ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 KeyPerformanceandPackageParameters Type IKQ75N120CH3 Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 1200V 75A 2V 175°C K75MCH3 PG-TO247-3-46 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 1200 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=134°C IC 150.0 75.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 300.0 A Turn off safe operating area VCE≤1200V,Tvj≤175°C,tp=1µs - 300.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 150.0 75.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 300.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V Short circuit withstand time VGE=15.0V,VCC≤600V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=175°C tSC PowerdissipationTC=25°C PowerdissipationTC=134°C Ptot 938.0 256.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 10 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,1) junction - case Rth(j-C) - - 0.16 K/W Diode thermal resistance,1) junction - case Rth(j-C) - - 0.28 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. Datasheet 3 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 1200 - - V VGE=15.0V,IC=75.0A Tvj=25°C Tvj=175°C - 2.00 2.50 2.35 - V - 1.90 1.85 2.30 - V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=75.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=1.88mA,VCE=VGE 5.1 5.8 6.5 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25°C Tvj=175°C - 5000 450 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=75.0A - 26.0 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 4856 - - 505 - - 290 - - 370.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=960V,IC=75.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 34 - ns - 47 - ns - 282 - ns - 29 - ns - 6.40 - mJ - 2.80 - mJ - 9.20 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25°C, VCC=600V,IC=75.0A, VGE=0.0/15.0V, RG(on)=6.0Ω,RG(off)=6.0Ω, Lσ=90nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 4 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=600V, IF=75.0A, diF/dt=600A/µs dirr/dt - 370 - ns - 5.10 - µC - 25.0 - A - -170 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 33 - ns - 48 - ns - 388 - ns - 66 - ns - 10.20 - mJ - 6.00 - mJ - 16.20 - mJ - 640 - ns - 12.30 - µC - 34.0 - A - -100 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=600V,IC=75.0A, VGE=0.0/15.0V, RG(on)=6.0Ω,RG(off)=6.0Ω, Lσ=90nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=600V, IF=75.0A, diF/dt=600A/µs dirr/dt 5 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 1000 900 100 800 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] not for linear use 10 1 700 600 500 400 300 200 100 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 160 300 VGE=20V 17V 140 120 100 80 60 40 15V 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 250 11V 200 9V 7V 150 5V 100 50 20 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Datasheet 0 1 2 3 4 5 6 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 6 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 300 300 VGE=20V Tvj = 25°C Tvj = 175°C 17V 250 15V 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 250 11V 200 9V 7V 150 5V 100 200 150 100 50 0 50 0 1 2 3 4 5 0 6 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] 6 8 10 12 14 16 18 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175°C) Figure 6. Typicaltransfercharacteristic (VCE=20V) 4.0 1000 IC = 38A IC = 75A IC = 150A 3.5 td(off) tf td(on) tr 3.0 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 4 2.5 2.0 1.5 100 10 1.0 0.5 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 30 60 90 120 150 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=175°C,VCE=600V, VGE=0/15V,RG=6Ω,Dynamictestcircuitin Figure E) Datasheet 7 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT td(off) tf td(on) tr 1000 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 0 5 td(off) tf td(on) tr 10 15 20 25 30 35 100 10 40 25 RG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=600V, VGE=0/15V,IC=75A,Dynamictestcircuitin Figure E) 100 125 150 175 60 typ. min. max. 7 Eoff Eon Ets 50 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=600V,VGE=0/15V, IC=75A,RG=6Ω,Dynamictestcircuitin Figure E) 8 6 5 4 3 40 30 20 10 2 1 50 Tvj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 0 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1,875mA) Datasheet 0 30 60 90 120 150 IC,COLLECTORCURRENT[A] Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=600V, VGE=0/15V,RG=6Ω,Dynamictestcircuitin Figure E) 8 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 30 18 Eoff Eon Ets Eoff Eon Ets 16 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 25 20 15 10 14 12 10 8 6 4 5 2 0 0 5 10 15 20 25 30 35 0 40 25 RG,GATERESISTOR[Ω] 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=600V, VGE=0/15V,IC=75A,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=600V,VGE=0/15V, IC=75A,RG=6Ω,Dynamictestcircuitin Figure E) 30 16 VCC=240V VCC=960V Eoff Eon Ets 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 25 20 15 10 12 10 8 6 4 5 2 0 400 450 500 550 600 650 700 750 0 800 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=0/15V, IC=75A,RG=6Ω,Dynamictestcircuitin Figure E) Datasheet 0 50 100 150 200 250 300 350 400 QGE,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=75A) 9 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 600 C,CAPACITANCE[pF] 1E+4 IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] Cies Coes Cres 1000 100 0 5 10 15 20 25 500 400 300 200 100 0 30 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 11 12 13 14 15 16 17 18 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤600V,Tvj≤175°C) 45 D = 0.5 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] tSC,SHORTCIRCUITWITHSTANDTIME[µs] 40 35 30 25 20 15 10 5 0.1 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 0.001 i: 1 2 3 4 5 ri[K/W]: 0.02275 0.047736 0.08788 2.0E-3 2.7E-4 τi[s]: 3.8E-4 2.7E-3 0.019881 0.505051 12.95671 0 10 12 14 16 18 20 1E-4 1E-6 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤600V,startatTvj≤175°C) Datasheet 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. IGBTtransientthermalresistance (D=tp/T) 10 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 1000 Tvj = 25°C, IF = 75A Tvj = 175°C, IF = 75A 0.2 0.1 900 0.1 0.05 trr,REVERSERECOVERYTIME[ns] Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] D = 0.5 0.02 0.01 single pulse 0.01 0.001 800 700 600 500 400 300 i: 1 2 3 4 5 ri[K/W]: 0.01104 0.10889 0.1573 2.8E-3 3.0E-4 τi[s]: 3.6E-4 2.7E-3 0.01681 0.44863 12.11241 1E-4 1E-6 1E-5 1E-4 0.001 0.01 0.1 200 300 1 tp,PULSEWIDTH[s] 350 400 450 500 550 600 650 700 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Figure 22. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=600V) 16 60 Tvj = 25°C, IF = 75A Tvj = 175°C, IF = 75A Tvj = 25°C, IF = 75A Tvj = 175°C, IF = 75A Irr,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] 14 12 10 8 6 4 50 40 30 20 10 2 0 300 350 400 450 500 550 600 650 0 300 700 350 400 450 500 550 600 650 diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=600V) Figure 24. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=600V) Datasheet 11 700 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 0 300 Tvj = 25°C, IF = 75A Tvj = 175°C, IF = 75A Tvj = 25°C Tvj = 175°C -50 -100 IF,FORWARDCURRENT[A] dIrr/dt,diodepeakrateoffallofIrr[A/µs] 250 -150 -200 -250 200 150 100 -300 50 -350 -400 300 350 400 450 500 550 600 650 0 700 diF/dt,DIODECURRENTSLOPE[A/µs] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=600V) Figure 26. Typicaldiodeforwardcurrentasafunction offorwardvoltage 3.5 IF = 38A IF = 75A IF = 150A VF,FORWARDVOLTAGE[V] 3.0 2.5 2.0 1.5 1.0 0.5 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Datasheet 12 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT Package Drawing PG-TO247-3-46 DIM A A1 A2 b b1 b2 MIN 4.90 2.31 1.90 1.16 1.96 1.96 MILLIMETERS MAX 5.10 2.51 2.10 1.26 2.25 2.06 INCHES MIN 0.193 0.091 0.075 0.046 0.077 0.077 MAX 0.201 0.099 0.083 0.050 0.089 0.081 DOCUMENT NO. Z8B00174295 SCALE 0 c D D1 D2 D3 E E1 E3 e N L L1 R Datasheet 0.66 21.10 16.85 1.35 0.78 15.90 13.50 1.55 0.59 20.90 16.25 1.05 0.58 15.70 13.10 1.35 0.026 0.831 0.663 0.053 0.031 0.626 0.531 0.061 0.023 0.823 0.640 0.041 0.023 0.618 0.516 0.053 0.214 (BSC) 5.44 (BSC) 19.80 1.90 20.10 4.30 2.10 0.780 0.075 13 5 5 7.5mm EUROPEAN PROJECTION ISSUE DATE 13-08-2014 3 3 0 0.791 0.169 0.083 REVISION 01 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.2 2017-06-09 IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT RevisionHistory IKQ75N120CH3 Revision:2017-06-09,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-04-26 Final data sheet 2.2 2017-06-09 Update Figure 6 Datasheet 15 V2.2 2017-06-09 TrademarksofInfineonTechnologiesAG µHVIC™,µIPM™,µPFC™,AU-ConvertIR™,AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,CoolDP™, CoolGaN™,COOLiR™,CoolMOS™,CoolSET™,CoolSiC™,DAVE™,DI-POL™,DirectFET™,DrBlade™,EasyPIM™, EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,GaNpowIR™, HEXFET™,HITFET™,HybridPACK™,iMOTION™,IRAM™,ISOFACE™,IsoPACK™,LEDrivIR™,LITIX™,MIPAQ™, ModSTACK™,my-d™,NovalithIC™,OPTIGA™,OptiMOS™,ORIGA™,PowIRaudio™,PowIRStage™,PrimePACK™, PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,SmartLEWIS™,SOLIDFLASH™,SPOC™, StrongIRFET™,SupIRBuck™,TEMPFET™,TRENCHSTOP™,TriCore™,UHVIC™,XHP™,XMC™ TrademarksupdatedNovember2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2017. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.