ON NTA4151PT1G Small signal mosfet Datasheet

NTA4151P, NTE4151P
Small Signal MOSFET
−20 V, −760 mA, Single P−Channel,
Gate Zener, SC−75, SC−89
Features
•
•
•
•
•
Low RDS(on) for Higher Efficiency and Longer Battery Life
Small Outline Package (1.6 x 1.6 mm)
SC−75 Standard Gullwing Package
ESD Protected Gate
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
V(BR)DSS
RDS(on) TYP
ID MAX
0.26 W @ −4.5 V
0.35 W @ −2.5 V
−20 V
−760 mA
0.49 W @ −1.8 V
Applications
•
•
•
•
High Side Load Switch
DC−DC Conversion
Small Drive Circuits
Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
P−Channel MOSFET
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Units
Drain−to−Source Voltage
Parameter
VDSS
−20
V
Gate−to−Source Voltage
VGS
±6.0
V
ID
−760
mA
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
SC−75
SC−89
Steady State
PD
±1000
mA
TJ,
TSTG
−55 to
150
°C
Continuous Source Current (Body Diode)
IS
−250
mA
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
TL
260
°C
tp =10 ms
Operating Junction and Storage Temperature
Gate−to−Source ESD Rating −
(Human Body Model, Method 3015)
2
1
SC−75 / SOT−416
CASE 463
STYLE 5
3
Drain
xx M G
G
3
ESD
1800
V
2
1
THERMAL RESISTANCE RATINGS
Junction−to−Ambient − Steady State (Note 1)
SC−75
SC−89
MARKING DIAGRAM
& PIN ASSIGNMENT
3
IDM
Pulsed Drain Current
S
mW
301
313
Steady State
G
°C/W
RqJA
1
Gate
2
Source
SC−89
CASE 463C
415
400
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
xx
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 8
1
Publication Order Number:
NTA4151P/D
NTA4151P, NTE4151P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = −16 V
−1.0
−100
nA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±4.5 V
$1.0
$10
mA
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = −250 mA
−1.2
V
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −350 mA
0.26
0.36
W
VGS = −2.5 V, ID = −300 mA
0.35
0.45
VGS = −1.8 V, ID = −150 mA
0.49
1.0
gFS
VDS = −10 V, ID = −250 mA
0.4
S
Input Capacitance
CISS
pF
COSS
VGS = 0 V, f = 1.0 MHz,
VDS = −5.0 V
156
Output Capacitance
Reverse Transfer Capacitance
CRSS
Forward Transconductance
−0.45
CHARGES AND CAPACITANCES
28
18
VGS = −4.5 V, VDD = −10 V,
ID = −0.3 A
nC
Total Gate Charge
QG(TOT)
2.1
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
0.325
Gate−to−Drain Charge
QGD
0.5
0.125
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
VGS = −4.5 V, VDD = −10 V,
ID = −200 mA, RG = 10 W
ns
8.0
8.2
td(OFF)
29
tf
20.4
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = −250 mA
−0.72
−1.1
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Marking
Package
Shipping†
NTA4151PT1G
TN
SC−75
(Pb−Free)
3000 / Tape & Reel
NTE4151PT1G
TM
SC−89
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NTA4151P, NTE4151P
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
0.7
VDS w −10 V
0.6
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
TJ = 25°C
−1.5 V
0.5
VGS = −1.75 V to −4.5 V
0.4
−1.25 V
0.3
0.2
0.1
−1.0 V
0.5
0.4
0.3
0.2
TJ = 25°C
TJ = 125°C
0.1
TJ = −55°C
0
0.5
1.0
1.5
2.0
2.5
0
3.0
0.4
1.6
Figure 2. Transfer Characteristics
0.5
0.4
TJ = 125°C
0.3
TJ = 25°C
TJ = −55°C
0.2
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
2.0
0.6
VGS = −2.5 V
0.5
TJ = 125°C
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.1
0.2
−ID, DRAIN CURRENT (AMPS)
0.3
0.4
0.5
0.6
0.7
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
1.6
250
ID = − 0.35 A
VGS = −4.5 V
TJ = 25°C
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.2
Figure 1. On−Region Characteristics
VGS = −4.5 V
1.4
0.8
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.6
0
0
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1.2
1.0
0.8
0.6
−50
200
CISS
150
100
COSS
50
−25
0
25
50
75
100
125
150
0
CRSS
0
TJ, JUNCTION TEMPERATURE (°C)
4
8
12
16
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
www.onsemi.com
3
20
NTA4151P, NTE4151P
0.7
5
QT
−IS, SOURCE CURRENT (AMPS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
4
3
QGS
2
QGD
VDS = −10 V
ID = −0.3 A
TA = 25°C
1
0
0
0.4
2.0
0.8
1.2
1.6
QG, TOTAL GATE CHARGE (nC)
VGS = 0 V
0.6
0.5
0.4
0.3
0.1
TJ = 25°C
0
2.4
TJ = 125°C
0.2
0
0.4
0.6
0.8
1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Diode Forward Voltage vs. Current
Figure 7. Gate−to−Source Voltage vs. Total
Gate Charge
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
0.2
1.0
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
Figure 9. Normalized Thermal Response
www.onsemi.com
4
10
100
1000
NTA4151P, NTE4151P
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−E−
2
3
b 3 PL
0.20 (0.008)
e
−D−
DIM
A
A1
b
C
D
E
e
L
HE
1
M
D
0.20 (0.008) E
HE
C
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
5
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
NTA4151P, NTE4151P
PACKAGE DIMENSIONS
SC−89, 3−LEAD
CASE 463C−03
ISSUE C
A
−X−
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.
B −Y− S
K
DIM
A
B
C
D
G
H
J
K
L
M
N
S
G
2 PL
D
0.08 (0.003)
M
3 PL
X Y
N
M
C
J
−T−
MILLIMETERS
MIN
NOM MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF
−−−
−−−
10 _
−−−
−−−
10 _
1.50
1.60
1.70
INCHES
NOM MAX
0.063 0.067
0.034 0.040
0.028 0.031
0.011 0.013
0.020 BSC
0.021 REF
0.004 0.006 0.008
0.012 0.016 0.020
0.043 REF
−−−
−−−
10 _
−−−
−−−
10 _
0.059 0.063 0.067
MIN
0.059
0.030
0.024
0.009
SEATING
PLANE
SOLDERING FOOTPRINT*
H
H
L
G
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTA4151P/D