Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 3, 10/2008 N--Channel Enhancement--Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --40.5 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. LIFETIME BUY LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistors 2110--2170 MHz, 19 W AVG., 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465--06, STYLE 1 NI--780 MRF5S21090HR3 CASE 465A--06, STYLE 1 NI--780S MRF5S21090HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 269 1.5 W W/°C Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 90 W CW Case Temperature 76°C, 19 W CW RθJC °C/W 0.65 0.69 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF5S21090HR3 MRF5S21090HSR3 1 Table 3. ESD Protection Characteristics Class 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2.5 2.9 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) VGS(Q) — 3.9 — Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.25 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 5 — S Crss — 1.7 — pF Off Characteristics LIFETIME BUY On Characteristics (DC) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, Pout = 19 W Avg., f = 2112.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 12.5 14.5 — dB Drain Efficiency ηD 24 26 — % Intermodulation Distortion IM3 — --37.5 --35 dBc ACPR — --40.5 --38 dBc IRL — --15 --9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF5S21090HR3 MRF5S21090HSR3 2 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 Test Conditions Human Body Model C3 R4 R3 C4 R2 C7 C10 C5 C8 C11 + C13 C12 VSUPPLY W1 C9 Z4 RF INPUT Z1 Z2 C14 Z3 Z8 Z6 Z13 Z9 C6 DUT Z10 Z18 Z15 Z11 Z12 Z7 Z16 C2 C1 Z17 Z20 Z19 Z21 RF OUTPUT C15 Z14 LIFETIME BUY Z5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 1.0856″ x 0.080″ Microstrip 0.130″ x 0.080″ Microstrip 0.230″ x 0.080″ Microstrip 0.347″ x 0.208″ Microstrip 0.090″ x 0.208″ Microstrip 0.650″ x 0.176″ Taper 0.623″ x 0.610″ Microstrip 0.044″ x 0.881″ Microstrip 0.044″ x 0.869″ Microstrip 1.076″ x 0.446″ Microstrip 0.320″ x 0.393″ Microstrip Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 PCB 0.609″ x 0.220″ Microstrip 0.290″ x 0.106″ Microstrip 0.290″ x 0.106″ Microstrip 0.080″ x 0.025″ Microstrip 1.080″ x 0.160″ Microstrip 0.180″ x 0.080″ Microstrip 0.260″ x 0.147″ Microstrip 0.500″ x 0.080″ Microstrip 0.199″ x 0.147″ Microstrip 0.365″ x 0.080″ Microstrip Arlon GX0300--55--22, 0.03″, εr = 2.55 Figure 1. MRF5S21090HR3(HSR3) Test Circuit Schematic Table 5. MRF5S21090HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC C2 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC C3 2.0 pF Chip Capacitor ATC100B2R0BT500XT ATC C4, C12 0.1 µF Chip Capacitors CDR33BX104AKYS Kemet C5 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C6 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC C7 7.5 pF Chip Capacitor ATC100B7R5JT500XT ATC C8 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC C9, C10 0.56 µF Chip Capacitors 700A561MT150XT ATC C11 1000 pF Chip Capacitor ATC100B102JT500XT ATC C13 470 µF, 35 V Electrolytic Capacitor EKME630ELL471MK25S Nippon Chemi--Con C14, C15 0.4 – 2.5 Variable Capacitors, Gigatrim 27281SL Johanson R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 560 kΩ, 1/4 W Chip Resistor CRCW12065600FKEA Vishay R3, R4 12 Ω, 1/4 W Chip Resistors CRCW120612R0FKEA Vishay W1 Wire Strap MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 3 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 R1 VBIAS C4 R2 C10 C9 R3 C11 C6 VDD R4 W1 C12 C1 LIFETIME BUY C14 CUT OUT AREA C2 C15 MRF5S21090 Rev 5 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S21090HR3(HSR3) Test Circuit Component Layout MRF5S21090HR3 MRF5S21090HSR3 4 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 R1 VGG C13 C7 C8 C3 C5 TYPICAL CHARACTERISTICS ηD 30 25 12 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IRL 11 20 10 --20 9 --25 8 --30 IM3 7 6 --35 --40 ACPR 5 2080 2100 2120 2140 2160 --45 2200 2180 --10 --15 --20 --25 --30 --35 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 G ps , POWER GAIN (dB) 13 35 VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 850 mA 2--Carrier W--CDMA, 10 MHz Carrier Spacing IRL, INPUT RETURN LOSS (dB) 14 IM3 (dBc), ACPR (dBc) Gps ηD, DRAIN EFFICIENCY (%) 40 15 IDQ = 1200 mA 16 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurement, 10 MHz Tone Spacing 1000 mA 15 850 mA 14 650 mA 13 450 mA IMD,THIRD ORDER INTERMODULATION DISTORTION (dBc) 17 --15 --20 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurement, 10 MHz Tone Spacing --25 --30 IDQ = 450 mA 1200 mA --35 --40 1000 mA --45 1 10 100 850 mA 650 mA --50 12 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two--Tone Power Gain versus Output Power Figure 5. 3rd Order Intermodulation Distortion versus Output Power --20 57 --25 3rd Order --30 --35 5th Order --40 --45 7th Order --50 --55 --60 0.1 VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 1 10 Pout , OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) LIFETIME BUY f, FREQUENCY (MHz) Figure 3. 2--Carrier W--CDMA Broadband Performance Ideal 55 P3dB = 51.17 dBm (130.9 W) 53 51 P1dB = 50.47 dBm (111.4 W) Actual 49 VDD = 28 Vdc, IDQ = 850 mA Pulsed CW, 8 µsec(on), 1 msec(off) f = 2140 MHz 47 45 30 32 34 36 38 40 TWO--TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power 42 MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 5 30 --20 --25 ηD 25 --30 --35 20 15 10 Gps --40 IM3 ACPR --45 --50 5 0 MTTF FACTOR (HOURS x AMPS2) 35 109 --15 VDD = 28 Vdc, IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, 2 x W--CDMA, 10 MHz @ 3.84 MHz Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 107 106 100 --55 1 108 10 120 LIFETIME BUY Pout, POWER (WATTS) W--CDMA 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 8. 2--Carrier W--CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. MTTF Factor versus Junction Temperature W--CDMA TEST SIGNAL --20 100 3.84 MHz Channel BW --30 10 --40 --50 1 (dB) --60 0.1 --70 --80 0.01 --90 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.001 --100 --110 .0001 0 2 4 6 8 10 PEAK--TO--AVERAGE (dB) Figure 10. CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal --120 --25 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --20 --15 --10 --5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 11. 2-Carrier W-CDMA Spectrum MRF5S21090HR3 MRF5S21090HSR3 6 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 40 IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 f = 2200 MHz f = 2100 MHz Zo = 10 Ω Zload f = 2200 MHz LIFETIME BUY f = 2100 MHz Zsource VDD = 28 Vdc, IDQ = 850 mA, Pout = 19 W Avg. f MHz Zsource Ω Zload Ω 2100 3.4 -- j5.1 2.4 -- j2.0 2120 3.2 -- j5.4 2.2 -- j2.1 2160 3.0 -- j4.4 2.1 -- j1.9 2200 3.0 -- j4.0 1.8 -- j1.6 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N R (INSULATOR) M T A B M M ccc M T A M M aaa M T A M ccc B S (LID) M T A B M (LID) M (INSULATOR) B M H C F E T A SEATING PLANE A DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465--06 ISSUE G NI--780 MRF5S21090HR3 4X U (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 K 2X 2 B (FLANGE) D bbb M T A M B M N (LID) ccc M R M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 F E A T DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 -----0.040 -----0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 -----1.02 -----0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE SEATING PLANE A (FLANGE) CASE 465A--06 ISSUE H NI--780S MRF5S21090HSR3 MRF5S21090HR3 MRF5S21090HSR3 8 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 3 Oct. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Added Product Documentation and Revision History, p. 9 MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 9 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2008. All rights reserved. MRF5S21090HR3 MRF5S21090HSR3 Document Number: MRF5S21090H Rev. 3, 10/2008 10 RF Device Data Freescale Semiconductor