ADPOW APL502J Linear mosfet Datasheet

APL502J
500V 52A 0.090Ω
LINEAR MOSFET
S
S
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
• Higher FBSOA
D
• Popular SOT-227 Package
G
• Higher Power Dissipation
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APL502J
UNIT
500
Volts
52
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
568
Watts
Linear Derating Factor
4.55
W/°C
PD
TJ,TSTG
208
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
-55 to 150
Operating and Storage Junction Temperature Range
TL
1
52
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
Amps
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
500
Volts
ID(ON)
On State Drain Current
52
Amps
IDSS
IGSS
VGS(TH)
(VDS > I D(ON) x R DS(ON) Max, VGS = 12V)
Drain-Source On-State Resistance
2
MAX
0.09
(VGS = 12V, 26A)
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
250
(VDS = VGS, ID = 2.5mA)
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Ohms
µA
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage
UNIT
8-2003
RDS(ON)
2
TYP
050-5897 Rev B
Symbol
APL502J
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
7600
9000
Coss
Output Capacitance
VDS = 25V
1280
1810
Reverse Transfer Capacitance
f = 1 MHz
620
930
Turn-on Delay Time
VGS = 15V
13
26
Crss
td(on)
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
VDD = 0.5 VDSS
24
48
ID = 52A @ 25°C
58
87
RG = 0.6Ω
14
17
TYP
MAX
UNIT
pF
ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
RθJC
Junction to Case
.22
RθJA
Junction to Ambient
40
°C/W
2500
VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Torque
Volts
10
Maximum Torque for Device Mounting Screws and Electrical Terminations.
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 2.22mH, R = 25Ω, Peak I = 52A
j
G
L
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.20
0.7
0.15
0.5
Note:
0.10
PDM
ZΘJC, THERMAL IMPEDANCE (°C/W)
0.25
t2
0.05
Duty Factor D = t1/t2
0.1
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
RC MODEL
Junction
temp. ( ”C)
Power
(Watts)
8-2003
t1
0.3
0
050-5897 Rev B
UNIT
0.0520
0.0261F
0.155
0.423F
0.0126
67.451F
Case temperature
FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL
10
lb•in
Typical Performance Curves
APL502J
120
VGS=10V, 15 V
VGS=10, 15V
100
8V
80
7.5 V
60
7V
40
6.5 V
6V
20
ID, DRAIN CURRENT (AMPERES)
100
8V
80
7.5 V
60
7V
40
6.5 V
6V
20
5.5 V
0
50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH OUTPUT CHARACTERISTICS
80
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
40
TJ = +125°C
20
TJ = -55°C
TJ = +25°C
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW OUTPUT CHARACTERISTICS
1.30
NORMALIZED TO
= 10V @ 26A
V
GS
1.20
1.00
0.90
0.70
0
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
60
ID, DRAIN CURRENT (AMPERES)
VGS=20V
0.80
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
50
40
30
20
10
0
VGS=10V
1.10
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
8-2003
ID, DRAIN CURRENT (AMPERES)
5.5 V
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
050-5897 Rev B
ID, DRAIN CURRENT (AMPERES)
120
APL502J
Typical Performance Curves
1.2
I
V
D
= 26A
GS
= 12V
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
2.5
2.0
1.5
1.0
0.5
1.0
0.9
0.8
0.7
0.0
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0.6
-50 -25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
208
30,000
OPERATION HERE
LIMITED BY RDS (ON)
100µS
50
10
10,000
C, CAPACITANCE (pF)
100
ID, DRAIN CURRENT (AMPERES)
1.1
1mS
5
10mS
100mS
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
Ciss
5,000
Coss
1,000
Crss
500
DC Line
.1
100
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
050-5897 Rev B
8-2003
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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