APL502J 500V 52A 0.090Ω LINEAR MOSFET S S Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). 27 2 T- D G SO "UL Recognized" ISOTOP ® • Higher FBSOA D • Popular SOT-227 Package G • Higher Power Dissipation S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APL502J UNIT 500 Volts 52 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 568 Watts Linear Derating Factor 4.55 W/°C PD TJ,TSTG 208 Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 52 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts Amps 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 Volts ID(ON) On State Drain Current 52 Amps IDSS IGSS VGS(TH) (VDS > I D(ON) x R DS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 MAX 0.09 (VGS = 12V, 26A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 250 (VDS = VGS, ID = 2.5mA) ±100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Ohms µA Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage UNIT 8-2003 RDS(ON) 2 TYP 050-5897 Rev B Symbol APL502J DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 7600 9000 Coss Output Capacitance VDS = 25V 1280 1810 Reverse Transfer Capacitance f = 1 MHz 620 930 Turn-on Delay Time VGS = 15V 13 26 Crss td(on) tr Rise Time td(off) Turn-off Delay Time tf Fall Time VDD = 0.5 VDSS 24 48 ID = 52A @ 25°C 58 87 RG = 0.6Ω 14 17 TYP MAX UNIT pF ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case .22 RθJA Junction to Ambient 40 °C/W 2500 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Volts 10 Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 2.22mH, R = 25Ω, Peak I = 52A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.20 0.7 0.15 0.5 Note: 0.10 PDM ZΘJC, THERMAL IMPEDANCE (°C/W) 0.25 t2 0.05 Duty Factor D = t1/t2 0.1 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.05 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION RC MODEL Junction temp. ( ”C) Power (Watts) 8-2003 t1 0.3 0 050-5897 Rev B UNIT 0.0520 0.0261F 0.155 0.423F 0.0126 67.451F Case temperature FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL 10 lb•in Typical Performance Curves APL502J 120 VGS=10V, 15 V VGS=10, 15V 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 ID, DRAIN CURRENT (AMPERES) 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 5.5 V 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH OUTPUT CHARACTERISTICS 80 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 40 TJ = +125°C 20 TJ = -55°C TJ = +25°C 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW OUTPUT CHARACTERISTICS 1.30 NORMALIZED TO = 10V @ 26A V GS 1.20 1.00 0.90 0.70 0 BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 60 ID, DRAIN CURRENT (AMPERES) VGS=20V 0.80 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 50 40 30 20 10 0 VGS=10V 1.10 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 8-2003 ID, DRAIN CURRENT (AMPERES) 5.5 V 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 050-5897 Rev B ID, DRAIN CURRENT (AMPERES) 120 APL502J Typical Performance Curves 1.2 I V D = 26A GS = 12V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 2.0 1.5 1.0 0.5 1.0 0.9 0.8 0.7 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 208 30,000 OPERATION HERE LIMITED BY RDS (ON) 100µS 50 10 10,000 C, CAPACITANCE (pF) 100 ID, DRAIN CURRENT (AMPERES) 1.1 1mS 5 10mS 100mS 1 TC =+25°C TJ =+150°C SINGLE PULSE Ciss 5,000 Coss 1,000 Crss 500 DC Line .1 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 050-5897 Rev B 8-2003 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.